Faculty Profiles - HANAMOTO Katsumi

Papers - HANAMOTO Katsumi

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Anomalous depth profile of implanted fluorine ions in SiO2/Si

K Hanamoto, H Yoshimoto, T Hosono, A Hirai, Y Kido, Y Nakayama, R Kaigawa

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 140 ( 1-2 ) 124 - 128 1998.4

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

Fluorine ions have been implanted into SiO2/Si with an energy of 30 keV at doses of 0.5 and 1 x 10(17) ions/cm(2). Depth profiles of fluorine have been studied by X-ray photoelectron spectroscopy (XPS) for both as-implanted and annealed samples. It was found that depth profiles of fluorine in SiO2/Si did not agree with the predicted Gaussian profiles and showed an enhancement of fluorine concentration in SiO2 region far as-implanted samples. It is thought that anomalous depth profiles may be due to rather high diffusion coefficient in Si than that in SiO2 as a result of fluorine implantation. After annealing at 700 degrees C for 30 min, fluorine concentrations considerably decreased in Si region compared with in SiO2 region. It could be considered that the oxide layers prevent the fluorine diffusion and the fluorine is trapped at around the SiO2/Si interface. (C) 1998 Elsevier Science B.V.

DOI： 10.1016/S0168-583X(98)00107-4

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Structure and crystallization of Sb-Se films prepared by vacuum evaporation method

C Kaito, T Fujita, T Kimura, K Hanamoto, N Suzuki, S Kimura, Y Saito

THIN SOLID FILMS 312 ( 1-2 ) 93 - 98 1998.1

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE SA

In order to clarify the cause of crystallization into a spherical crystal of low symmetry from amorphous films, various compounds of the Sb-Se system have been prepared and crystallization due re intense electron beam irradiation has been observed in situ. It was revealed that crystallization of small Sb crystals with (0001) orientation is necessary to form the spherical Sb,Se, crystal. (C) 1998 Elsevier Science S.A.

DOI： 10.1016/S0040-6090(97)00690-1

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Effect of fluorine ion implantation on the microstructure and microhardness of AISI 440C stainless steel

K Hanamoto, M Sasaki, T Miyashita, Y Kido, Y Nakayama, Y Kawamoto, M Fujiwara, R Kaigawa

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 129 ( 2 ) 228 - 232 1997.7

Language：English Publishing type：Research paper (scientific journal) Publisher：ELSEVIER SCIENCE BV

AISI 440C stainless steel along with pure iron and chromium have been implanted with 30 keV fluorine ions at doses from 5 x 10(16) to 6 x 10(17) ions/cm(2) and surface hardnesses of the 440C steel have been examined. Implanted regions inside the specimens were studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The results of XPS and XRD measurements indicate the formation of FeF2 and suggest small grains of CrF2 and non-stoichiometric chromium fluorides in 440C steel. It may be concluded that an increase of the surface hardness in fluorine implanted 440C steel is related to precipitation of metal fluorides and surface oxidation.

DOI： 10.1016/S0168-583X(97)00227-9

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DISKTRON ACCELERATOR

M SHOJI, K TAKAHASHI, K HANAMOTO, H TSUJI, M TSUBAKIHARA, T NAKABAYASHI, K TSUCHIDA, N OKADA, H NAKANO, K FURUTA, R ONO, Y NAKAYAMA, Y MIYAKE

REVIEW OF SCIENTIFIC INSTRUMENTS 64 ( 9 ) 2466 - 2474 1993.9

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

A new type of low-energy ion accelerator has been developed. It includes an eight-storied Disktron generator, newly developed accelerating tubes which hold up to 4 MV/m, both single and tandem acceleration capability, and a compound negative ion source. The Disktron generates 3.2 MV with a dummy load and 2.2 MV with ion beams, and has a voltage stability better than 10(-3) at around 1 MV with a corona feedback stabilizer or a generating voltmeter feedback stabilizer only. The highly stabilized voltage of the Disktron has particularly been allowed to form an ion microbeam of about 1-mum diameter.

DOI： 10.1063/1.1143905

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THEORETICAL CONSIDERATION OF INTENSITY OF AN X-RAY MICROBEAM FORMED BY A HOLLOW GLASS PIPE

K FURUTA, Y NAKAYAMA, M SHOJI, R KAIGAWA, K HANAMOTO, H NAKANO, Y HOSOKAWA

REVIEW OF SCIENTIFIC INSTRUMENTS 64 ( 1 ) 135 - 142 1993.1

Language：English Publishing type：Research paper (scientific journal) Publisher：AMER INST PHYSICS

Intensities of x-ray microbeams formed by the 250-mm-long hollow glass pipes of inner diameters of 27.4, 23.0, and 18.8 mum have been theoretically investigated, by taking account of the slope distribution of microprojections (surface roughness) on the pipe inner wall, using the Monte Carlo method. The intensities for all the pipes calculated on the supposition that each pipe inner wall is perfect (i.e., zero rms of the slope distribution) have been much greater than the experimental values in the x-ray energy region from 6.93 to 19.6 keV. Assuming the slope rms from 2.5 X 10(-4) rad to 3.3 X 10(-3) rad, the calculated results have agreed with the experimental values. Discussions on the results for all the pipes are given in relation to the x-ray anomalous dispersion, the penetration of x rays, the intensity distribution on the x-ray sources used, undulation of the pipes, and the presence of microdust in the pipes.

DOI： 10.1063/1.1144427

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