研究者詳細 - 後藤　秀徳

論文 - 後藤　秀徳

分割表示 102 件中 61 - 80 件目／全件表示 >>

Fabrication of new superconducting materials, CaxK1-xCy (0 < x < 1) 査読

Huyen T. L. Nguyen, Saki Nishiyama, Masanari Izumi, Lu Zheng, Xiao Miao, Yusuke Sakai, Hidenori Goto, Naohisa Hirao, Yasuo Ohishi, Tomoko Kagayama, Katsuya Shimizu, Yoshihiro Kubozono

CARBON 100 641 - 646 2016年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：PERGAMON-ELSEVIER SCIENCE LTD

Metal intercalation to graphite produces various types of superconductors. The highest superconducting transition temperature T-c (onset temperature, T-c(onset), of 11.5 K) was found in Ca intercalated graphite, denoted CaC6.T-c(onset) increased up to 15.1 K at 7.5 GPa, implying a positive pressure dependence. However, no new metal-intercalated graphite superconductors with T-c(onset) higher than 11.5 K at ambient pressure have so far been reported. To search for new graphite superconductors, we successfully synthesized binary-element-intercalated graphite, CaxK1-xCy. Their structure resembles that of KC8. T-c increased continuously with increasing x. Furthermore, the pressure dependence of T-c in Ca0.6K0.4C8 was investigated over a wide pressure range from 0-43 GPa. T-c (= 9.6 K at 0 GPa) increased to 11.6 K at 3.3 GPa, and decreased to 2.0 K at 41 GPa. This behavior is similar to that of CaC6, albeit with a lower maximum T-c. Xray diffraction patterns were measured under high pressures of 0-24 GPa, and suggest a structural transition at 15 GPa. Evidence is given for superconducting graphite involving binary metal intercalation. (C) 2016 Elsevier Ltd. All rights reserved.

DOI： 10.1016/j.carbon.2016.01.071

Correlation of superconductivity with crystal structure in (NH3)(y)CsxFeSe 査読

Lu Zheng, Xiao Miao, Yusuke Sakai, Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Saki Nishiyama, Kunihisa Sugimoto, Akihiko Fujiwara, Yoshihiro Kubozono

PHYSICAL REVIEW B 93 ( 10 ) 2016年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER PHYSICAL SOC

The superconducting transition temperature T-c of ammoniated metal-doped FeSe (NH3)(y)MxFeSe (M: metal atom) has been scaled with the FeSe plane spacing, and it has been suggested that the FeSe plane spacing depends on the location of metal atoms in (NH3)(y)MxFeSe crystals. Although the crystal structure of (NH3)(y)LixFeSe exhibiting a high T-c (similar to 44 K) was determined from neutron diffraction, the structure of (NH3)(y)MxFeSe exhibiting a low T-c (similar to 32 K) has not been determined thus far. Here, we determined the crystal structure of (NH3)(y)Cs0.4FeSe (T-c = 33 K) through the Rietveld refinement of the x-ray diffraction (XRD) pattern measured with synchrotron radiation at 30 K. The XRD pattern was analyzed based on two different models, on-center and off-center, under a space group of 14/mmm. In the on-center structure, the Cs occupies the 2a site and the N of NH3 may occupy either the 4c or 2b site, or both. In the off-center structure, the Cs may occupy either the 4c or 2b site, or both, while the N occupies the 2a site. Only an on-center structure model in which the Cs occupies the 2a and the N of NH3 occupies the 4c site provided reasonable results in the Rietveld analysis. Consequently, we concluded that (NH3)(y)Cs0.4FeSe can be assigned to the on-center structure, which produces a smaller FeSe plane spacing leading to the lower T-c.

DOI： 10.1103/PhysRevB.93.104508

Synthesis and transistor application of the extremely extended phenacene molecule, [9] phenacene 査読

Yuma Shimo, Takahiro Mikami, Shino Hamao, Hidenori Goto, Hideki Okamoto, Ritsuko Eguchi, Shin Gohda, Yasuhiko Hayashi, Yoshihiro Kubozono

SCIENTIFIC REPORTS 6 2016年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：NATURE PUBLISHING GROUP

the widespread interest in the chemistry, physics and materials science of such molecules and their potential applications. In particular, extended phenacene molecules, consisting of coplanar fused benzene rings in a repeating W-shaped pattern have attracted much attention because field-effect transistors (FETs) using phenacene molecules show promisingly high performance. Until now, the most extended phenacene molecule available for transistors was [8] phenacene, with eight benzene rings, which showed very high FET performance. Here, we report the synthesis of a more extended phenacene molecule, [9] phenacene, with nine benzene rings. Our synthesis produced enough [9] phenacene to allow the characterization of its crystal and electronic structures, as well as the fabrication of FETs using thin-film and single-crystal [9] phenacene. The latter showed a field-effect mobility as high as 18 cm(2) V-1 s(-1), which is the highest mobility realized so far in organic single-crystal FETs.

DOI： 10.1038/srep21008

Application of organic semiconductors toward transistors 査読

Yoshihiro Kubozono, Xuexia He, Shino Hamao, Eri Uesugi, Yuma Shimo, Takahiro Mikami, Hidenori Goto, Takashi Kambe

Nanodevices for Photonics and Electronics: Advances and Applications 351 - 383 2016年1月

Emergence of Multiple Superconducting Phases in (NH3)(y)MxFeSe (M: Na and Li) 査読

Lu Zheng, Xiao Miao, Yusuke Sakai, Masanari Izumi, Hidenori Goto, Saki Nishiyama, Eri Uesugi, Yuichi Kasahara, Yoshihiro Iwasa, Yoshihiro Kubozono

SCIENTIFIC REPORTS 5 2015年8月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：NATURE PUBLISHING GROUP

We previously discovered multiple superconducting phases in the ammoniated Na-doped FeSe material, (NH3)(y)NaxFeSe. To clarify the origin of the multiple superconducting phases, the variation of T-c was fully investigated as a function of x in (NH3)(y)NaxFeSe. The 32 K superconducting phase is mainly produced in the low-x region below 0.4, while only a single phase is observed at x = 1.1, with T-c = 45 K, showing that the T-c depends significantly on x, but it changes discontinuously with x. The crystal structure of (NH3)(y)NaxFeSe does not change as x increases up to 1.1, i.e., the space group of I4/mmm. The lattice constants, a and c, of the low-T-c phase (T-c = 32.5 K) are 3.9120(9) and 14.145(8) angstrom, respectively, while a = 3.8266(7) angstrom and c = 17.565(9) angstrom for the high-T-c phase (similar to 46 K). The c increases in the high T-c phase, implying that the T-c is directly related to c. In (NH3)(y)LixFeSe material, the T-c varies continuously within the range of 39 to 44 K with changing x. Thus, the behavior of T-c is different from that of (NH3)(y)NaxFeSe. The difference may be due to the difference in the sites that the Na and Li occupy.

DOI： 10.1038/srep12774

1D and 2D Bi Compounds in Field-Effect Transistors 査読

Eri Uesugi, Saki Nishiyama, Hidehiko Akiyoshi, Hidenori Goto, Yoji Koike, Kazuyoshi Yamada, Yoshihiro Kubozono

ADVANCED ELECTRONIC MATERIALS 1 ( 8 ) 2015年8月

Superconductivity in aromatic hydrocarbons 査読

Yoshihiro Kubozono, Hidenori Goto, Taihei Jabuchi, Takayoshi Yokoya, Takashi Kambe, Yusuke Sakai, Masanari Izumi, Lu Zheng, Shino Hamao, Huyen L. T. Nguyen, Masafumi Sakata, Tomoko Kagayama, Katsuya Shimizu

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 514 199 - 205 2015年7月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE BV

'Aromatic hydrocarbon' implies an organic molecule that satisfies the (4n + 2) pi-electron rule and consists of benzene rings. Doping solid aromatic hydrocarbons with metals provides the superconductivity. The first discovery of such superconductivity was made for K-doped picene (K(x)picene, five benzene rings). Its superconducting transition temperatures (T-c's) were 7 and 18 K. Recently, we found a new superconducting K(x)picene phase with a T-c as high as 14 K, so we now know that K(x)picene possesses multiple superconducting phases. Besides K(x)picene, we discovered new superconductors such as Rb(x)picene and Caxpicene. A most serious problem is that the shielding fraction is <= 615% for K(x)picene and Rb(x)picene, and it is often similar to 1% for other superconductors. Such low shielding fractions have made it difficult to determine the crystal structures of superconducting phases. Nevertheless, many research groups have expended a great deal of effort to make high quality hydrocarbon superconductors in the five years since the discovery of hydrocarbon superconductivity. At the present stage, superconductivity is observed in certain metaldoped aromatic hydrocarbons (picene, phenanthrene and dibenzopentacene), but the shielding fraction remains stubbornly low. The highest priority research area is to prepare aromatic superconductors with a high superconducting volume-fraction. Despite these difficulties, aromatic superconductivity is still a core research target and presents interesting and potentially breakthrough challenges, such as the positive pressure dependence of T-c that is clearly observed in some phases of aromatic hydrocarbon superconductors, suggesting behavior not explained by the standard BCS picture of superconductivity. In this article, we describe the present status of this research field, and discuss its future prospects. (C) 2015 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.physc.2015.02.015

Emergence of double-dome superconductivity in ammoniated metal-doped FeSe 査読

Masanari Izumi, Lu Zheng, Yusuke Sakai, Hidenori Goto, Masafumi Sakata, Yuki Nakamoto, Huyen L. T. Nguyen, Tomoko Kagayama, Katsuya Shimizu, Shingo Araki, Tatsuo C. Kobayashi, Takashi Kambe, Dachun Gu, Jing Guo, Jing Liu, Yanchun Li, Liling Sun, Kosmas Prassides, Yoshihiro Kubozono

SCIENTIFIC REPORTS 5 2015年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：NATURE PUBLISHING GROUP

The pressure dependence of the superconducting transition temperature (T-c) and unit cell metrics of tetragonal (NH3)(y)Cs0.4FeSe were investigated in high pressures up to 41 GPa. The T-c decreases with increasing pressure up to 13 GPa, which can be clearly correlated with the pressure dependence of c (or FeSe layer spacing). The T-c vs. c plot is compared with those of various (NH3)(y)MxFeSe (M: metal atoms) materials exhibiting different T-c and c, showing that the T-c is universally related to c. This behaviour means that a decrease in two-dimensionality lowers the T-c. No superconductivity was observed down to 4.3 K in (NH3)(y)Cs0.4FeSe at 11 and 13 GPa. Surprisingly, superconductivity re-appeared rapidly above 13 GPa, with the T-c reaching 49 K at 21 GPa. The appearance of a new superconducting phase is not accompanied by a structural transition, as evidenced by pressure-dependent XRD. Furthermore, T-c slowly decreased with increasing pressure above 21 GPa, and at 41 GPa superconductivity disappeared entirely at temperatures above 4.9 K. The observation of a double-dome superconducting phase may provide a hint for pursuing the superconducting coupling-mechanism of ammoniated/non-ammoniated metal-doped FeSe.

DOI： 10.1038/srep09477

Erratum: Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes (Journal of Materials Chemistry C (2015) 3 DOI: 10.1039/c4tc02413c) 査読

Yoshihiro Kubozono, Keita Hyodo, Hiroki Mori, Shino Hamao, Hidenori Goto, Yasushi Nishihara

Journal of Materials Chemistry C 3 ( 12 ) 2960 2015年3月

Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b ']dithiophenes 査読

Yoshihiro Kubozono, Keita Hyodo, Hiroki Mori, Shino Hamao, Hidenori Goto, Yasushi Nishihara

JOURNAL OF MATERIALS CHEMISTRY C 3 ( 10 ) 2413 - 2421 2015年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ROYAL SOC CHEMISTRY

Field-effect transistors (FETs) have been fabricated with thin films of a series of 2,9-dialkylated phenanthro [1,2-b:8,7-b'] dithiophene derivatives (C-n-PDTs). The FET characteristics of C-n-PDT thin-film FETs with an SiO2 gate dielectric as well as high-k gate dielectrics were recorded, and the dependence of the field-effect mobility, mu, on the number (n) of carbon atoms in the alkyl chains was investigated, showing that the 2,9-didodecylphenanthro[1,2-b:8,7-b'] dithiophene (C-12-PDT) thin-film FET displays superior properties, with mu s as high as 1.8 cm(2) V-1 s(-1) for the SiO2 gate dielectric and 2.2 cm(2) V-1 s(-1) for the HfO2 gate dielectric. The average mu values, <mu >, reach 1.1(5) and 1.8(6) cm(2) V-1 s(-1), respectively, for the SiO2 and ZrO2 gate dielectrics. Low-voltage operation, showing an absolute average threshold voltage <|V-th|> of similar to 11 V, was implemented, together with the above high <mu > of similar to 2 cm(2) V-1 s(-1). Also, a flexible FET was fabricated with a parylene gate dielectric. The results of this study show the potential of the C-12-PDT molecule for application in a high-performance transistor.

DOI： 10.1039/c4tc02413c

Transistors fabricated using the single crystals of [8]phenacene 査読

Yuma Shimo, Takahiro Mikami, Hiroto T. Murakami, Shino Hamao, Hidenori Goto, Hideki Okamoto, Shin Gohda, Kaori Sato, Antonio Cassinese, Yasuhiko Hayashi, Yoshihiro Kubozono

JOURNAL OF MATERIALS CHEMISTRY C 3 ( 28 ) 7370 - 7378 2015年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ROYAL SOC CHEMISTRY

Field-effect transistors (FETs) with single crystals of a new phenacene-type molecule, [8]phenacene, were fabricated and characterized. This new molecule consists of a phenacene core of eight benzene rings, with an extended p-conjugated system, which was recently synthesized for use in an FET by our group. The FET characteristics of an [8]phenacene single-crystal FET with SiO2 gate dielectrics show typical p-channel properties with an average field-effect mobility, <mu >, as high as 3(2) cm(2) V-1 s(-1) in two-terminal measurement mode, which is a relatively high value for a p-channel single-crystal FET. The hmi was determined to be 6(2) cm(2) V-1 s(-1) in four-terminal measurement mode. Low-voltage operation was achieved with PbZr0.52Ti0.48O3 (PZT) as the gate dielectric, and an electric-double-layer (EDL) capacitor. The <mu > and average values of absolute threshold voltage, <vertical bar V-th vertical bar >, were 1.6(4) cm(2) V-1 s(-1) and 5(1) V, respectively, for PZT, and 4(2) x 10(-1) cm(2) V-1 s(-1) and 2.38(4) V, respectively, for the EDL capacitor; these values were evaluated in two-terminal measurement mode. The inverter circuit was fabricated using [8]phenacene and N, N'-1H, 1H-perfluorobutyldicyanoperylene-carboxydi-imide single-crystal FETs. This is the first logic gate circuit using phenacene molecules. Furthermore, the relationship between mu and the number of benzene rings was clarified based on this study and the previous studies on phenacene single-crystal FETs.

DOI： 10.1039/c5tc00960j

Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b '] dithiophenes (vol 3, pg 2413, 2015) 査読

Yoshihiro Kubozono, Keita Hyodo, Hiroki Mori, Shino Hamao, Hidenori Goto, Yasushi Nishihara

JOURNAL OF MATERIALS CHEMISTRY C 3 ( 12 ) 2960 - 2960 2015年

Transistor Application of Phenacene Molecules and Their Characteristics 査読

Yoshihiro Kubozono, Xuexia He, Shino Hamao, Kazuya Teranishi, Hidenori Goto, Ritsuko Eguchi, Takashi Kambe, Shin Gohda, Yasushi Nishihara

EUROPEAN JOURNAL OF INORGANIC CHEMISTRY ( 24 ) 3806 - 3819 2014年8月

記述言語：英語出版者・発行元：WILEY-V C H VERLAG GMBH

The characteristics of field-effect transistors (FETs) fabricated from thin films and single crystals of phenacene molecules are fully reported in this review together with the electronic and crystal structures of phenacenes. Phenacene molecules possess a low HOMO level and a wide band gap. The highest mobility observed in the phenacene thin-film FETs is 7.4 cm(2)V(-1)s(-1) for [6]phenacene, and in single-crystal FETs the highest value is 6.3 cm(2)V(-1)s(-1) for [7]phenacene. The phenacene thin-film FETs show O-2-sensing properties unlike their single-crystal FETs. The bias-stress effect is fully investigated for phenacene single-crystal FETs. Furthermore, the low-voltage operation of phenacene single-crystal FETs with electric-double-layer (EDL) capacitors is reported. The temperature dependence of phenacene single-crystal FETs is reported to clarify the transport mechanism, which is suggestive of band-like transport.

DOI： 10.1002/ejic.201402168

An Extended Phenacene-type Molecule, [8] Phenacene: Synthesis and Transistor Application 査読

Hideki Okamoto, Ritsuko Eguchi, Shino Hamao, Hidenori Goto, Kazuma Gotoh, Yusuke Sakai, Masanari Izumi, Yutaka Takaguchi, Shin Gohda, Yoshihiro Kubozono

SCIENTIFIC REPORTS 4 2014年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：NATURE PUBLISHING GROUP

A new phenacene-type molecule, [8] phenacene, which is an extended zigzag chain of coplanar fused benzene rings, has been synthesised for use in an organic field-effect transistor (FET). The molecule consists of a phenacene core of eight benzene rings, which has a lengthy pi-conjugated system. The structure was verified by elemental analysis, solid-state NMR, X-ray diffraction (XRD) pattern, absorption spectrum and photoelectron yield spectroscopy (PYS). This type of molecule is quite interesting, not only as pure chemistry but also for its potential electronics applications. Here we report the physical properties of [8] phenacene and its FET application. An [8] phenacene thin-film FET fabricated with an SiO2 gate dielectric showed clear p-channel characteristics. The highest m achieved in an [8] phenacene thin-film FET with an SiO2 gate dielectric is 1.74 cm(2) V-1 s(-1), demonstrating excellent FET characteristics; the average mu was evaluated as 1.2(3) cm(2) V-1 s(-1). The mu value in the [8] phenacene electric-double-layer FET reached 16.4 cm(2) V-1 s(-1), which is the highest reported in EDL FETs based on phenacene-type molecules; the average m was evaluated as 8(5) cm(2) V-1 s(-1). The mu values recorded in this study show that [8] phenacene is a promising molecule for transistor applications.

DOI： 10.1038/srep05330

Transistor application of alkyl-substituted picene 査読

Hideki Okamoto, Shino Hamao, Hidenori Goto, Yusuke Sakai, Masanari Izumi, Shin Gohda, Yoshihiro Kubozono, Ritsuko Eguchi

SCIENTIFIC REPORTS 4 2014年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：NATURE PUBLISHING GROUP

Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)(2), formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, m, in a picene-(C14H29)(2) thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached similar to 21 cm(2) V-1 s(-1), which is the highest mu value recorded for organic thin-film FETs; the averagem mu value (<mu >) evaluated from twelve FET devices was 14(4) cm(2)V(-1) s(-1). The, m. values for picene-(C14H29)(2) thin- film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm(2) V-1 s(-1), and the lowest absolute threshold voltage, vertical bar V-th vertical bar, (5.2 V) was recorded with a PZT gate dielectric; the average jVthj for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)(2) FET was also fabricated with an SiO2 gate dielectric, yielding mu = 3.4 x 10(-2) cm(2) V-1 s(-1). These results verify the effectiveness of picene-(C14H29)(2) for electronics applications.

DOI： 10.1038/srep05048

Superconducting phases in (NH3)(y)MxFeSe1-zTez (M = Li, Na, and Ca) 査読

Yusuke Sakai, Lu Zheng, Masanari Izumi, Kazuya Teranishi, Ritsuko Eguchi, Hidenori Goto, Taiki Onji, Shingo Araki, Tatsuo C. Kobayashi, Yoshihiro Kubozono

PHYSICAL REVIEW B 89 ( 14 ) 2014年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER PHYSICAL SOC

Superconducting phases of (NH3)(y)MxFeSe1-z Te-z have been synthesized by the intercalation of metal atoms (M: Li, Na, Ca) into FeSe and FeSe0.5Te0.5 using a low-temperature liquid NH3 technique. The superconducting transition temperature (T-c) is 31.5 K for Na-doped FeSe, and for Li-, Na-, and Ca-doped FeSe0.5Te0.5 it is 26, 22, and 17 K, respectively. The 31.5 K superconducting is the superconducting phase in ammoniated Na-doped FeSe. The T-c is lower than that (onset T-c = 46 K) of the superconducting phase reported previously. The reason why the T-c of this phase is lower is discussed based on the structure. The pressure dependences of T-c in the (NH3)(y)Na0.5FeSe and (NH3)(y)Na0.4FeSe0.5Te0.5 samples have been measured and a negative pressure dependence is observed; i.e., a decrease in lattice constant c leads to a decrease in Tc, consistent with the behavior of (NH3)(y)Cs0.4FeSe reported previously by our group. Furthermore, the magnetic behavior of (NH3)(y)Na0.4FeSe0.5Te0.5 has been fully investigated at different applied magnetic fields (H) to determine the critical magnetic This is a successful metal intercalation into FeSe1-z Te-z (z not equal 0) and an observation of superconductivity.

DOI： 10.1103/PhysRevB.89.144509

Superconducting phases in (NH3)(y)MxFeSe1-zTez (M = Li, Na, and Ca) 査読

Sakai Yusuke, Zheng Lu, Izumi Masanari, Teranishi Kazuya, Eguchi Ritsuko, Goto Hidenori, Onji Taiki, Araki Shingo, Kobayashi Tatsuo C, Kubozono Yoshihiro

PHYSICAL REVIEW B 89 ( 14 ) 144509 2014年4月

Systematic Control of Hole-Injection Barrier Height with Electron Acceptors in [7]phenacene Single-Crystal Field-Effect Transistors 査読

Xuexia He, Shino Hamao, Ritsuko Eguchi, Hidenori Goto, Yukihiro Yoshida, Gunzi Saito, Yoshihiro Kubozono

JOURNAL OF PHYSICAL CHEMISTRY C 118 ( 10 ) 5284 - 5293 2014年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER CHEMICAL SOC

The interface between the single crystal and the Au source/drain electrodes in [7]phenacene single-crystal field-effect transistors (FETs) was modified using 14 electron acceptors with different redox potentials. The effective hole-injection barrier heights (phi(eff)(h)s) for [7]phenacene single-crystal FETs have been plotted as a function of the redox potential (E-redox) of the inserted electron acceptors, showing that the phi(eff)(h) decreases with increasing E-redox. The highest phi(eff)(h) occurs without inserted material (electron acceptors), and this deviates from the otherwise linear relationship between phi(eff)(h) and E-redox. We have investigated the temperature dependence of phi(eff)(h) in an attempt to determine why the phi(eff)(h) value without inserted material is so high, which suggests that no additional barrier, such as a tunneling barrier, is formed in the device. We conclude that the pure Schottky barrier in this FET is lowered very significantly by the insertion of an electron acceptor. The gate-voltage dependence of phi(eff)(h) suggests a slight reduction of Schottky barrier height owing to hole accumulation. Furthermore, the clear correlation between threshold voltage and redox potential suggests a relationship between threshold voltage and phi(eff)(h). Controlling the interface between the single crystal and the source/drain electrodes in this FET produced a very high mu (similar to 6.9 cm(2) V-1 s(-1)) and low absolute threshold voltage, i.e., excellent FET characteristics. The topological characterization of inserted materials on [7]phenacene single crystals are achieved using atomic force microscope (AFM) and X-ray diffraction (XRD). The results show that the single crystals are not completely covered with the inserted materials and the inhomogeneous modification of inserted materials for single crystals effectively leads to the drastic change of hole-injection barrier between source/drain electrodes and single-crystal active layer.

DOI： 10.1021/jp4107469

Superconductivity in (NH3)yCs0.4FeSe 査読

Lu Zheng, Masanari Izumi, Yusuke Sakai, Ritsuko Eguchi, Hidenori Goto, Yasuhiro Takabayashi, Takashi Kambe, Taiki Onji, Shingo Araki, Tatsuo C. Kobayashi, Jungeun Kim, Akihiko Fujiwara, Yoshihiro Kubozono

Physical Review B - Condensed Matter and Materials Physics 88 ( 9 ) 2013年9月

記述言語：英語掲載種別：研究論文（学術雑誌）

Alkali-metal-intercalated FeSe materials, (NH3) yM0.4FeSe (M: K, Rb, and Cs), have been synthesized using the liquid NH3 technique. (NH3)yCs 0.4FeSe shows a superconducting transition temperature (T c) as high as 31.2 K, which is higher by 3.8 K than the Tc of nonammoniated Cs0.4FeSe. The Tcs of (NH 3)yK0.4FeSe and (NH3) yRb0.4FeSe are almost the same as those of nonammoniated K0.4FeSe and Rb0.4FeSe. The Tc of (NH 3)yCs0.4FeSe shows a negative pressure dependence. A clear correlation between Tc and lattice constant c is found for ammoniated metal-intercalated FeSe materials, suggesting a correlation between Fermi-surface nesting and superconductivity. © 2013 American Physical Society.

DOI： 10.1103/PhysRevB.88.094521

Fabrication of single crystal field-effect transistors with phenacene-type molecules and their excellent transistor characteristics 査読

Xuexia He, Ritsuko Eguchi, Hidenori Goto, Eri Uesugi, Shino Hamao, Yasuhiro Takabayashi, Yoshihiro Kubozono

ORGANIC ELECTRONICS 14 ( 6 ) 1673 - 1682 2013年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE BV

Single crystal field-effect transistors (FETs) using [6] phenacene and [7] phenacene show p-channel FET characteristics. Field-effect mobilities, mu s, as high as 5.6 x 10 (1) cm(2) V (1) s (1) in a [6] phenacene single crystal FET with an SiO2 gate dielectric and 2.3 cm(2) V (1) s (1) in a [7] phenacene single crystal FET were recorded. In these FETs, 7,7,8,8-tetracyanoquinodimethane (TCNQ) was inserted between the Au source/drain electrodes and the single crystal to reduce hole-injection barrier heights. The mu reached 3.2 cm(2) V (1) s (1) in the [7] phenacene single crystal FET with a Ta2O5 gate dielectric, and a low absolute threshold voltage vertical bar V-TH vertical bar (6.3 V) was observed. Insertion of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) in the interface produced very a high mu value (4.7-6.7 cm(2) V (1) s (1)) in the [7] phenacene single crystal FET, indicating that F(4)TCNQ was better for interface modification than TCNQ. A single crystal electric double-layer FET provided mu as high as 3.8 x 10 (1) cm(2) V (1) s (1) and vertical bar V-TH vertical bar as low as 2.3 V. These results indicate that [6] phenacene and [7] phenacene are promising materials for future practical FET devices, and in addition we suggest that such devices might also provide a research tool to investigate a material's potential as a superconductor and a possible new way to produce the superconducting state. (C) 2013 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.orgel.2013.03.035

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