研究者詳細 - 後藤　秀徳

論文 - 後藤　秀徳

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Band Engineering of Bilayer Graphene through Combination of Direct Electron Transfer and Electrostatic Gating 査読

Lei Zhi, Hidenori Goto, Akihisa Takai, Akari Miura, Shino Hamao, Ritsuko Eguchi, Takao Nishikawa, Shizuo Tokito, Yoshihiro Kubozono

The Journal of Physical Chemistry C 124 ( 43 ) 24001 - 24008 2020年10月

Difference in gating and doping effects on the band gap in bilayer graphene 査読

Takaki Uchiyama, Hidenori Goto, Hidehiko Akiyoshi, Ritsuko Eguchi, Takao Nishikawa, Hiroshi Osada, Yoshihiro Kubozono

SCIENTIFIC REPORTS 7 2017年9月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：NATURE PUBLISHING GROUP

A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics. The presence of the band gap has been confirmed using double-gated BLG devices in which positive and negative gate voltages are applied to each side of BLG. An alternative method to induce the electric field is electron and hole doping of each side of BLG using electron-transfer adsorbates. However, the generation of the band gap by carrier doping is still under investigation. Here, we determined whether the electron/hole doping can produce the electric field required to open the band gap by measuring the temperature dependence of conductivity for BLG placed between electron-donor self-assembled monolayers (SAMs) and electron-acceptor molecules. We found that some devices exhibited a band gap and others did not. The potentially irregular and variable structure of SAMs may affect the configuration of the electric field, yielding variable electronic properties. This study demonstrates the essential differences between gating and doping.

DOI： 10.1038/s41598-017-11822-9

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Carrier Accumulation in Graphene with Electron Donor/Acceptor Molecules 査読

Hidehiko Akiyoshi, Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yukihiro Yoshida, Gunzi Saito, Yoshihiro Kubozono

Advanced Electronic Materials 1 ( 7 ) 1500073 - 1500073 2015年7月

Electric double-layer capacitance between an ionic liquid and few-layer graphene 査読

Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Fujiwara Akihiko, Kubozono Yoshihiro

Scientific Reports 3 ( 1 ) 2013年12月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）

Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance C-g. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance C-EDL between the ionic liquid and graphene involves the series connection of C-g and the quantum capacitance C-q, which is proportional to the density of states. We investigated the variables that determine C-EDL at the molecular level by varying the number of graphene layers n and thereby optimising C-q. The C-EDL value is governed by C-q at n, 4, and by C-g at n > 4. This transition with n indicates a composite nature for C-EDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor.

DOI： 10.1038/srep01595

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その他リンク： http://www.nature.com/articles/srep01595.pdf

Parity effects in few-layer graphene 査読

Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yoshihiro Kubozono

Nano Letters 13 ( 11 ) 5153 - 5158 2013年11月

担当区分：筆頭著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）

We study the electronic properties in few-layer graphenes (FLGs) classified by even/odd layer number n. FLGs with even n have only parabolic energy dispersions, whereas FLGs with odd n have a linear dispersion besides parabolic ones. This difference leads to a distinct density of states in FLGs, experimentally confirmed by the gate-voltage dependence of the electric double-layer capacitance. Thus, FLGs with odd n are unique materials that have relativistic carriers originating in linear energy dispersion. © 2013 American Chemical Society.

DOI： 10.1021/nl402404z

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Edge-Dependent Transport Properties in Graphene 査読

Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Akihiko Fujiwara, Yoshihiro Kubozono

NANO LETTERS 13 ( 3 ) 1126 - 1130 2013年3月

担当区分：筆頭著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER CHEMICAL SOC

Graphene has two kinds of edges which have different electronic properties. A singular electronic state emerges at zigzag edges, while it disappears at armchair edges. We study the edge-dependent transport properties in few-layer graphene by applying a side gate voltage to the edge with an ionic liquid. The devices indicating a conductance peak at the charge neutrality point have zigzag edges, confirmed by micro-Raman spectroscopy mapping. The hopping transport between zigzag edges increases the conductance.

DOI： 10.1021/nl3044844

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Gate control of spin transport in multilayer graphene 査読

Goto H, Kanda A, Sato T, Tanaka S, Ootuka Y, Odaka S, Miyazaki H, Tsukagoshi K, Aoyagi Y

Applied Physics Letters 92 ( 21 ) 212110 2008年

Biosensor Application of CMOS Inverter and Ring Oscillator with Organic Field-Effect Transistors

Masaki Utsumi, Akihiko Fujiwara, Hidenori Goto, Hideki Okamoto, Nobuyuki Takeyasu, Yasunori Saitoh, Michihiro Suga, Yuichiro Takahashi, Hiroyuki Imanaka, Hiroki Taniguchi, Shintaro Yasui, Ritsuko Eguchi, Yoshihiro Kubozono

ACS Applied Electronic Materials 2025年2月

Structural and Superconducting Properties of Bi₂Rh₃(Se_1–xS_x)₂ (x = 0–1.0) 査読

Zhiyan Zhang, Wanli Pan, Masaki Utsumi, Yuki Yamamoto, Hidenori Goto, Ryusuke Kondo, Takayoshi Yokoya, Ryota Goban, Tomoki Higashikawa, Ritsuko Eguchi, Yasuhiro Takabayashi, Koichi Hayashi, Hirofumi Ishii, Tatsuo C. Kobayashi, Yoshihiro Kubozono

Inorganic Chemistry 63 ( 45 ) 21531 - 21540 2024年10月

Superstructure of Fe_5–xGeTe₂ Determined by Te K-Edge Extended X-ray Absorption Fine Structure and Te Kα X-ray Fluorescence Holography 査読

Ritsuko Eguchi, Halubai Sekhar, Koji Kimura, Hirokazu Masai, Naohisa Happo, Mitsuki Ikeda, Yuki Yamamoto, Masaki Utsumi, Hidenori Goto, Yasuhiro Takabayashi, Hiroo Tajiri, Koichi Hayashi, Yoshihiro Kubozono

ACS Omega 9 ( 19 ) 21287 - 21297 2024年5月

Nanophase Separation in K_1–xCa_xC₈ Revealed by X-ray Fluorescence Holography and Extended X-ray Absorption Fine Structure 査読

Naohisa Happo, Atsushi Kubota, Xiaofan Yang, Ritsuko Eguchi, Hidenori Goto, Mitsuki Ikeda, Koji Kimura, Yasuhiro Takabayashi, Jens R. Stellhorn, Shinjiro Hayakawa, Koichi Hayashi, Yoshihiro Kubozono

Chemistry of Materials 36 ( 9 ) 4135 - 4143 2024年4月

Pressure Dependence of the Structural and Superconducting Properties of the Bi-Based Superconductor Bi₂Pd₃Se₂ 査読

Zhiyan Zhang, Mitsuki Ikeda, Masaki Utsumi, Yuki Yamamoto, Hidenori Goto, Ritsuko Eguchi, Yen-Fa Liao, Hirofumi Ishii, Yasuhiro Takabayashi, Koichi Hayashi, Ryusuke Kondo, Tatsuo C. Kobayashi, Yoshihiro Kubozono

Inorganic Chemistry 63 ( 5 ) 2553 - 2561 2024年1月

Structure of Bi<inf>2</inf>Rh<inf>3</inf>Se<inf>2</inf> above and below charge density wave transition determined by Bi Lα and Lγ X-ray fluorescence holography 査読

Zhiyan Zhang, Ritsuko Eguchi, Halubai Sekhar, Koji Kimura, Naohisa Happo, Yuki Yamamoto, Masaki Utsumi, Hidenori Goto, Koichi Hayashi, Yoshihiro Kubozono

Physical Chemistry Chemical Physics 2024年

掲載種別：研究論文（学術雑誌）

The local structure of a two-dimensional layered material, Bi2Rh3Se2, in which superconducting (SC) and charge-density wave (CDW) states coexist, was investigated using Bi Lα and Lγ X-ray fluorescence holography (XFH). The crystal of Bi2Rh3Se2 adopts a monoclinic lattice with a space group of C2/m (No. 12) at room temperature; however, the structure below the CDW transition (∼240 K) is still unclear because of the difficulty in analyzing single-crystal X-ray diffraction. Therefore, information on the crystal structure below 240 K is significant to fully investigate the relationship between the SC and CDW states. Precisely, the value of β has not been definitely determined, i.e., β ∼ 90° or ∼134° is still unclear. Therefore, the crystal structure above 240 K is still under discussion. In this study, we attempted to determine the crystal structure at 300 and 200 K by comparing the atomic images reconstructed from Bi Lγ holograms with images simulated based on crystal structure models. A Bi Lα hologram was also exploited to determine suitable atomic locations by comparison with the simulated ones. The atomic image simulated with the crystal structure of Bi2Rh3S2 below the structural phase transition temperature reproduced well the experimental atomic image at 200 K. Specifically, the line profiles of the reconstructed images at 300 and 200 K, which exactly reflect the intensity of the atomic spots, clearly indicate the structural variation above and below the CDW transition temperature, i.e., the supercell structure is suggested as the atomic location for Bi2Rh3Se2 below the CDW transition temperature.

DOI： 10.1039/d4cp02694b

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Observation of the Superstructure in Fe_5–xGeTe₂ by X-ray Fluorescence Holography 査読

Ritsuko Eguchi, Mitsuki Ikeda, Yuki Yamamoto, Hidenori Goto, Naohisa Happo, Koji Kimura, Koichi Hayashi, Yoshihiro Kubozono

Inorganic Chemistry 2023年12月

Coulomb Scattering Controlled by Ionized Molecules Adsorbed on Graphene 査読

Akihisa Takai, Hidenori Goto, Hidehiko Akiyoshi, Lei Zhi, Misuzu Kitahara, Hideki Okamoto, Ritsuko Eguchi, Yukihiro Yoshida, Gunzi Saito, Yoshihiro Kubozono

The Journal of Physical Chemistry C 128 ( 1 ) 467 - 473 2023年12月

Structural Characterization of Graphite Analogue BC_x Synthesized Under Various Conditions and Its Application to Ti Intercalation 査読

Kazumasa Horigane, Masayuki Tadokoro, Ritsuko Eguchi, Hirofumi Ishii, Shinichi Nakamura, Takashi Kambe, Naoshi Ikeda, Hidenori Goto, Yoshihiro Kubozono, Jun Akimitsu

Inorganic Chemistry 62 ( 48 ) 19466 - 19473 2023年11月

Correlation between electronic structure and emergence of superconductivity in Bi2−xSbxTe3−ySey ( y∼1.2 ) studied by x-ray emission spectroscopy and density functional theory 査読

Hitoshi Yamaoka, Harald O. Jeschke, Huan Li, Tong He, Naohito Tsujii, Nozomu Hiraoka, Hirofumi Ishii, Hidenori Goto, Yoshihiro Kubozono

Physical Review B 2023年7月

Pressure Dependence of Superconductivity in Alkaline Earth Metal-Doped FeSe: toward Completion of the Phase Diagram of Superconducting Transition Temperature Versus FeSe Layer Distance 査読

Mitsuki Ikeda, Huan Li, Zhiyan Zhang, Yuki Yamamoto, Hidenori Goto, Ritsuko Eguchi, Hirofumi Ishii, Yen-Fa Liao, Yasuhiro Takabayashi, Koichi Hayashi, Yoshihiro Kubozono

Chemistry of Materials 35 ( 11 ) 4338 - 4346 2023年6月

Pressure Dependence of Superconductivity in a Charge-Density-Wave Superconductor Bi2Rh3Se2 査読

Mitsuki Ikeda, Zhiyan Zhang, Hidenori Goto, Ritsuko Eguchi, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

Inorganic Chemistry 62 ( 19 ) 7453 - 7460 2023年5月

Multiple-site Ag doping in Bi2Se3: Compositional crossover from substitution to intercalation as revealed by photoelectron diffraction and X-ray fluorescence holography 査読

Fumihiko Matsui, Hiroshi Ota, Ritsuko Eguchi, Hidenori Goto, Kaya Kobayashi, Jun Akimitsu, Hikaru Ozaki, Takumi Nishioka, Koji Kimura, Kouichi Hayashi, Takuya Shimano, Naohisa Happo, Yoshihiro Kubozono

Journal of Electron Spectroscopy and Related Phenomena 264 147295 - 147295 2023年4月

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