Updated on 2022/10/01

写真a

 
GOTO Hidenori
 
Organization
Research Institute for Interdisciplinary Science Associate Professor
Position
Associate Professor
External link

Research Interests

  • 物性実験

Research Areas

  • Nanotechnology/Materials / Nanostructural physics

  • Natural Science / Magnetism, superconductivity and strongly correlated systems

Education

  • 東京大学大学院   理学系研究科   物理学専攻博士課程

    1993.4 - 1998.9

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  • 東京大学大学院   理学系研究科   物理学専攻修士課程

    1991.4 - 1993.3

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  • The University of Tokyo   理科I類/理学部   物理学科

    1987.4 - 1991.3

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Research History

 

Papers

  • Band Engineering of Bilayer Graphene through Combination of Direct Electron Transfer and Electrostatic Gating Reviewed

    Lei Zhi, Hidenori Goto, Akihisa Takai, Akari Miura, Shino Hamao, Ritsuko Eguchi, Takao Nishikawa, Shizuo Tokito, Yoshihiro Kubozono

    The Journal of Physical Chemistry C   124 ( 43 )   24001 - 24008   2020.10

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acs.jpcc.0c07537

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  • Difference in gating and doping effects on the band gap in bilayer graphene Reviewed

    Takaki Uchiyama, Hidenori Goto, Hidehiko Akiyoshi, Ritsuko Eguchi, Takao Nishikawa, Hiroshi Osada, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   7   2017.9

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:NATURE PUBLISHING GROUP  

    A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics. The presence of the band gap has been confirmed using double-gated BLG devices in which positive and negative gate voltages are applied to each side of BLG. An alternative method to induce the electric field is electron and hole doping of each side of BLG using electron-transfer adsorbates. However, the generation of the band gap by carrier doping is still under investigation. Here, we determined whether the electron/hole doping can produce the electric field required to open the band gap by measuring the temperature dependence of conductivity for BLG placed between electron-donor self-assembled monolayers (SAMs) and electron-acceptor molecules. We found that some devices exhibited a band gap and others did not. The potentially irregular and variable structure of SAMs may affect the configuration of the electric field, yielding variable electronic properties. This study demonstrates the essential differences between gating and doping.

    DOI: 10.1038/s41598-017-11822-9

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  • Carrier Accumulation in Graphene with Electron Donor/Acceptor Molecules Reviewed

    Hidehiko Akiyoshi, Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yukihiro Yoshida, Gunzi Saito, Yoshihiro Kubozono

    Advanced Electronic Materials   1 ( 7 )   1500073 - 1500073   2015.7

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    DOI: 10.1002/aelm.201500073

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  • Electric double-layer capacitance between an ionic liquid and few-layer graphene Reviewed

    Eri Uesugi, Hidenori Goto, Ritsuko Eguchi, Akihiko Fujiwara, Yoshihiro Kubozono

    Scientific Reports   3 ( 1 )   2013.12

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    DOI: 10.1038/srep01595

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    Other Link: http://www.nature.com/articles/srep01595.pdf

  • Parity effects in few-layer graphene Reviewed

    Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yoshihiro Kubozono

    Nano Letters   13 ( 11 )   5153 - 5158   2013.11

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    We study the electronic properties in few-layer graphenes (FLGs) classified by even/odd layer number n. FLGs with even n have only parabolic energy dispersions, whereas FLGs with odd n have a linear dispersion besides parabolic ones. This difference leads to a distinct density of states in FLGs, experimentally confirmed by the gate-voltage dependence of the electric double-layer capacitance. Thus, FLGs with odd n are unique materials that have relativistic carriers originating in linear energy dispersion. © 2013 American Chemical Society.

    DOI: 10.1021/nl402404z

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  • Edge-Dependent Transport Properties in Graphene Reviewed

    Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Akihiko Fujiwara, Yoshihiro Kubozono

    NANO LETTERS   13 ( 3 )   1126 - 1130   2013.3

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER CHEMICAL SOC  

    Graphene has two kinds of edges which have different electronic properties. A singular electronic state emerges at zigzag edges, while it disappears at armchair edges. We study the edge-dependent transport properties in few-layer graphene by applying a side gate voltage to the edge with an ionic liquid. The devices indicating a conductance peak at the charge neutrality point have zigzag edges, confirmed by micro-Raman spectroscopy mapping. The hopping transport between zigzag edges increases the conductance.

    DOI: 10.1021/nl3044844

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  • Gate control of spin transport in multilayer graphene Reviewed

    Goto H, Kanda A, Sato T, Tanaka S, Ootuka Y, Odaka S, Miyazaki H, Tsukagoshi K, Aoyagi Y

    Applied Physics Letters   92 ( 21 )   212110   2008

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    Publisher:AIP  

    DOI: 10.1063/1.2937836

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  • Superconducting Properties of Pd1–xPtxBi2 over a Wide Pressure Range

    Ai Suzuki, Mitsuki Ikeda, Hirofumi Ishii, Yen-Fa Liao, Yasuhiro Takabayashi, Kouichi Hayashi, Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    The Journal of Physical Chemistry C   126 ( 23 )   9948 - 9955   2022.6

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acs.jpcc.2c01972

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  • Pressure dependence of superconductivity in alkali-Bi compounds KBi2 and RbBi2

    Huan Li, Mitsuki Ikeda, Ai Suzuki, Tomoya Taguchi, Yanting Zhang, Hidenori Goto, Ritsuko Eguchi, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   24 ( 12 )   7185 - 7194   2022.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ROYAL SOC CHEMISTRY  

    The structural and superconducting properties of alkali-Bi-based compounds, KBi2 and RbBi2, were investigated over a wide pressure range for the first time. The samples of KBi2 and RbBi2 were prepared using a liquid ammonia (NH3) technique, and demonstrated superconductivity with superconducting transition temperatures, T-c, of 3.50 and 4.21 K at ambient pressure, respectively. The onset superconducting transition temperature, T-c(onset), of KBi2 decreased slightly; however, it suddenly jumped at 2 GPa and increased gradually with pressure, indicating the presence of two superconducting phases in the low-pressure range. The pressure-dependent X-ray diffraction patterns indicate that the KBi2 sample decomposed into KBi and Bi at pressures higher than 2.5 GPa. Moreover, a discontinuous change in T-c(onset) was observed for KBi2 at 9 GPa, which reflects the decomposition of KBi2 into KBi and Bi. By contrast, the value of T-c(onset) of RbBi2 was almost constant over a pressure range of 0-8 GPa. Thus, the superconducting properties and stability of alkali-Bi-based compounds against pressure were comprehensively explored in this study. In addition, the superconducting Cooper pair symmetry was investigated from the magnetic field dependence of T-c of KBi2 at 0.790 and 2.32 GPa, and of RbBi2 at 1.17 GPa, indicating the exact deviation from the simple s-wave paring model, which may be due to the complex electronic structure of Bi. The results elucidated the exotic superconducting properties of KBi2 and RbBi2 based on the pressure and magnetic field dependence of T-c and verified the chemical stability of KBi2 under pressure.

    DOI: 10.1039/d2cp00679k

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  • Evaluation of Effective Field-Effect Mobility in Thin-Film and Single-Crystal Transistors for Revisiting Various Phenacene-Type Molecules

    Yanting Zhang, Ritsuko Eguchi, Shino Hamao, Hideki Okamoto, Hidenori Goto, Yoshihiro Kubozono

    ACS OMEGA   7 ( 6 )   2022.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER CHEMICAL SOC  

    The magnitude of the field-effect mobility mu of organic thin-film and single-crystal field-effect transistors (FETs) has been over-estimated in certain recent studies. These reports set alarm bells ringing in the research field of organic electronics. Herein, we report a precise evaluation of the mu values using the effective field-effect mobility, mu(eff), a new indicator that is recently designed to prevent the FET performance of thin-film and single-crystal FETs based on various phenacene molecules from being overestimated. The transfer curves of a range of FETs based on phenacene are carefully categorized on the basis of a previous report. The exact evaluation of the value of mu(eff) depends on the exact classification of each transfer curve. The transfer curves of all our phenacene FETs could be successfully classified based on the method indicated in the aforementioned report, which made it possible to evaluate the exact value of mu(eff) for each FET. The FET performance based on the values of mu(eff) obtained in this study is discussed in detail. In particular, the mu(eff) values of single-crystal FETs are almost consistent with the mu values that were reported previously, but the mu(eff) values of thin-film FETs were much lower than those previously reported for mu, owing to a high absolute threshold voltage, vertical bar V-th vertical bar. The increase in the field-effect mobility as a function of the number of benzene rings, which was previously demonstrated based on the mu values of single-crystal FETs with phenacene molecules, is well reproduced from the mu(eff) values. The FET performance is discussed based on the newly evaluated mu(eff) values, and the future prospects of using phenacene molecules in FET devices are demonstrated.

    DOI: 10.1021/acsomega.1c06932

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  • Superconductivity of topological insulator Sb2Te3−ySey under pressure Reviewed

    Tomoya Taguchi, Mitsuki Ikeda, Huan Li, Ai Suzuki, Xiaofan Yang, Hirofumi Ishii, Yen-Fa Liao, Hiromi Ota, Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    Journal of Physics: Condensed Matter   33 ( 48 )   485704 - 485704   2021.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/1361-648x/ac244b

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/ac244b/pdf

  • Superconducting properties of BaBi3 at ambient and high pressures Reviewed

    Yanan Wang, Tomoya Taguchi, Huan Li, Ai Suzuki, Yanting Zhang, Akari Miura, Mitsuki Ikeda, Hidenori Goto, Ritsuko Eguchi, Takafumi Miyazaki, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    Physical Chemistry Chemical Physics   23 ( 40 )   23014 - 23023   2021.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    The pressure dependence of BaBi3 superconductivity is investigated, demonstrating only the presence of the α phase, and <italic>p</italic>-wave superconductivity.

    DOI: 10.1039/d1cp00042j

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  • Pressure Dependence of Superconducting Behavior of 4d and 5d Transition Metal Compounds CaRh2 and CaIr2 Reviewed

    Huan Li, Tomoya Taguchi, Yanan Wang, Hidenori Goto, Ritsuko Eguchi, Hirofumi Ishii, Yen-Fa Liao, Yoshihiro Kubozono

    The Journal of Physical Chemistry C   125 ( 37 )   20617 - 20625   2021.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acs.jpcc.1c06207

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  • Emergence of a Pressure-Driven Superconducting Phase in Ba0.77Na0.23Ti2Sb2O Reviewed

    Tomoya Taguchi, Yanan Wang, Xiaofan Yang, Huan Li, Yasuhiro Takabayashi, Kouichi Hayashi, Takafumi Miyazaki, Yen-Fa Liao, Hirofumi Ishii, Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    Inorganic Chemistry   60 ( 6 )   3585 - 3592   2021.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acs.inorgchem.0c02836

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  • Fabrication of ring oscillators using organic molecules of phenacene and perylenedicarboximide Reviewed

    Niko Fioravanti, Luca Pierantoni, Davide Mencarelli, Claudio Turchetti, Shino Hamao, Hideki Okamoto, Hidenori Goto, Ritsuko Eguchi, Akihiko Fujiwara, Yoshihiro Kubozono

    RSC Advances   11 ( 13 )   7538 - 7551   2021.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    <p>A ring oscillator consisting of p-channel and n-channel organic FETs.</p>

    DOI: 10.1039/d1ra00511a

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  • Superconductivity in topological insulator β-PdBi2 under pressure Reviewed

    Ai Suzuki, Tomoya Taguchi, Huan Li, Yanan Wang, Hirofumi Ishii, Yen-Fa Liao, Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    Journal of Physics: Condensed Matter   33 ( 13 )   135702 - 135702   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/1361-648x/abd99c

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/abd99c/pdf

  • Electronic structures of Bi2Se3 and AgxBi2Se3 under pressure studied by high-resolution x-ray absorption spectroscopy and density functional theory calculations Reviewed

    Hitoshi Yamaoka, Harald O. Jeschke, Xiaofan Yang, Tong He, Hidenori Goto, Nozomu Hiraoka, Hirofumi Ishii, Jun'ichiro Mizuki, Yoshihiro Kubozono

    Physical Review B   102 ( 15 )   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Physical Society (APS)  

    DOI: 10.1103/physrevb.102.155118

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.155118/fulltext

  • Superconducting behavior of BaTi2Bi2O and its pressure dependence Reviewed

    Yanan Wang, Huan Li, Tomoya Taguchi, Ai Suzuki, Akari Miura, Hidenori Goto, Ritsuko Eguchi, Takafumi Miyazaki, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    Physical Chemistry Chemical Physics   22 ( 40 )   23315 - 23322   2020.10

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    <p>A possible Dirac semimetal, BaTi2Bi2O, indicates a sign of topologically nontrivial nature in superconductivity at high pressure.</p>

    DOI: 10.1039/d0cp04771f

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  • Superconductivity in Bi2−xSbxTe3−ySey (x = 1.0 and y = 2.0) under pressure Reviewed

    Tong He, Xiaofan Yang, Tomoya Taguchi, Lei Zhi, Takafumi Miyazaki, Kaya Kobayashi, Jun Akimitsu, Hirofumi Ishii, Yen-Fa Liao, Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    Journal of Physics: Condensed Matter   32 ( 46 )   465702 - 465702   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/1361-648x/abaad2

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/abaad2/pdf

  • A new protocol for the preparation of superconducting KBi2 Reviewed

    Huan Li, Yanan Wang, Yutaro Aoki, Saki Nishiyama, Xiaofan Yang, Tomoya Taguchi, Akari Miura, Ai Suzuki, Lei Zhi, Hidenori Goto, Ritsuko Eguchi, Takashi Kambe, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    RSC Advances   10 ( 45 )   26686 - 26692   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    <p>A superconducting KBi2 sample was successfully prepared using a liquid ammonia (NH3) technique.</p>

    DOI: 10.1039/d0ra04541a

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  • Structure and superconducting properties of multiple phases of (NH3)yAExFeSe (AE: Ca, Sr and Ba) Reviewed

    Huan Li, Yanan Wang, Xiaofan Yang, Tomoya Taguchi, Lei Zhi, Hidenori Goto, Ritsuko Eguchi, Hirofumi Ishii, Yen-Fa Liao, Yoshihiro Kubozono

    Journal of Physics: Condensed Matter   32 ( 39 )   395704 - 395704   2020.6

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/1361-648x/ab9911

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/ab9911/pdf

  • Inhomogeneous superconductivity in thin crystals of FeSe1−xTex (x=1.0, 0.95, and 0.9) Reviewed

    Ritsuko Eguchi, Megumi Senda, Eri Uesugi, Hidenori Goto, Akihiko Fujiwara, Yasuhiko Imai, Shigeru Kimura, Takashi Noji, Yoji Koike, Yoshihiro Kubozono

    Materials Research Express   7 ( 3 )   036001 - 036001   2020.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/2053-1591/ab7c85

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    Other Link: https://iopscience.iop.org/article/10.1088/2053-1591/ab7c85/pdf

  • Superconducting properties of (NH3)yLixFeSe0.5Te0.5 under pressure Reviewed

    Xiaofan Yang, Tong He, Tomoya Taguchi, Huan Li, Yanan Wang, Hidenori Goto, Ritsuko Eguchi, Takafumi Miyazaki, Hitoshi Yamaoka, Hirofumi Ishii, Yen Fa Liao, Yoshihiro Kubozono

    New Journal of Physics   21 ( 11 )   113010   2019.11

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    © 2019 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft. We prepared two superconducting phases of (NH3) y Li x FeSe0.5Te0.5, which show superconducting transition temperatures (T c's) as high as 20.2 and 29.5 K at ambient pressure, here called the 'low-T c phase' and 'high-T c phase'. The temperature dependence of electrical resistance (R) was measured for the low-T c phase of (NH3) y Li x FeSe0.5Te0.5 over a pressure (p) range of 0-14 GPa, and for the high-T c phase of (NH3) y Li x FeSe0.5Te0.5 over 0-19 GPa, yielding double-dome superconducting T c-p phase diagrams, i.e. two superconducting phases (SC-I and SC-II) were found for both the low-T c and high-T c phases under pressure. For the low-T c phase, the maximum T c was 20.2 K at 0 GPa for SC-I, and 19.9 K at 8.98 GPa for SC-II. For the high-T c phase, the maximum T c was 33.0 K at 1.00 GPa for SC-I, and 24.0 K at 11.5-13.2 GPa for SC-II. These results imply that the maximum T c value of the high pressure phase (SC-II) does not exceed the maximum value of the SC-I, unlike what was shown in the T c-p phase diagrams of (NH3) y Li x FeSe and (NH3) y Cs x FeSe investigated previously. Nevertheless, the double-dome T c-p phase diagram was found in metal-doped FeSe0.5Te0.5, indicating that this feature is universal in metal-doped FeSe1-zTe z . Moreover, no structural phase transitions were observed for either the low-T c or high-T c phases of (NH3) y Li x FeSe0.5Te0.5 over the wide pressure range of 0-15.3 GPa, and the T c-lattice constant (c) plots for both phases were recorded to determine the critical point separating SC-I and SC-II.

    DOI: 10.1088/1367-2630/ab5034

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  • Preparation and characterization of superconducting Ba1-xCsxTi2Sb2O, and its pressure dependence of superconductivity Reviewed

    Wang Yanan, Yang Xiaofan, Taguchi Tomoya, Li Huan, He Tong, Goto Hidenori, Eguchi Ritsuko, Miyazaki Takafumi, Liao Yen-Fa, Ishii Hirofumi, Kubozono Yoshihiro

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 ( 11 )   110603-1 - 110603-7   2019.10

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.7567/1347-4065/ab4ef5

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    Other Link: http://iopscience.iop.org/article/10.7567/1347-4065/ab4ef5/pdf

  • Superconducting behavior of a new metal iridate compound, SrIr2, under pressure Reviewed

    Xiaofan Yang, Huan Li, Tong He, Tomoya Taguchi, Yanan Wang, Hidenori Goto, Ritsuko Eguchi, Rie Horie, Kazumasa Horigane, Kaya Kobayashi, Jun Akimitsu, Hirofumi Ishii, Yen Fa Liao, Hitoshi Yamaoka, Yoshihiro Kubozono

    Journal of Physics Condensed Matter   32 ( 2 )   2019.10

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    © 2019 IOP Publishing Ltd. Herein, we investigated the pressure dependence of electric transport in a new type of superconducting metal iridate compound, SrIr2, that exhibits a superconducting transition temperature, T c, as high as 6.6 K at ambient pressure, in order to complete the T c-pressure (p ) phase diagram. Very recently, this sample's superconductivity was discovered by our group, but the superconducting behavior has not yet been clarified under pressure. In this study, we fully investigated this sample's superconductivity in a wide pressure range. The T c value decreased with an increase in pressure, but the onset superconducting transition temperature, (R-T plot), increased above a pressure of 8 GPa, indicating an unconventional superconductivity different from a BCS-type superconductor. The magnetic field dependence of electric resistance (R) against temperature (R-T plot) recorded at 7.94 and 11.3 GPa suggested an unconventional superconductivity, followed by a p -wave polar model, supporting the deviation from a simple s-wave pairing. Moreover, we fully investigated the pressure dependence of crystal structure in SrIr2 and discussed the correlation between superconductivity and crystal structure. This is the first systematic study on superconducting behavior of a new type of metal iridate compound, MIr2 (M: alkali-earth metal atom), under pressure.

    DOI: 10.1088/1361-648X/ab4605

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  • Pressure-induced superconductivity in Bi2-xSbxTe3-ySey Reviewed

    Tong He, Xiaofan Yang, Tomoya Taguchi, Teppei Ueno, Kaya Kobayashi, Jun Akimitsu, Hitoshi Yamaoka, Hirofumi Ishii, Yen Fa Liao, Hiromi Ota, Hidenori Goto, Ritsuko Eguchi, Kensei Terashima, Takayoshi Yokoya, Harald O. Jeschke, Xianxin Wu, Yoshihiro Kubozono

    Physical Review B   100 ( 9 )   094525-1 - 094525-11   2019.9

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    © 2019 American Physical Society. We systematically investigated the pressure dependence of electrical transport and the crystal structure of topological insulator, Bi2-xSbxTe3-ySey, which showed no superconductivity down to 2.0 K at ambient pressure. The Bi2-xSbxTe3-ySey crystal showed two structural phase transitions under pressure, from rhombohedral structure (space group No. 166, R3m, termed phase I) to monoclinic structure (space group No. 12, C2/m, termed phase II), and from phase II to another monoclinic structure (space group No. 12, C2/m, termed phase III). Superconductivity appeared when applying pressure; actually the superconductivity of all Bi2-xSbxTe3-ySey samples emerged in phase I. The superconducting transition temperature, Tc, increased against pressure in a pressure range of 0-15 GPa for all Bi2-xSbxTe3-ySey samples, and the maximum Tc was 5.45 K, recorded at 13.5 GPa in Bi2-xSbxTe3-ySey at x=0 and y=1.0. The magnetic field (H) dependence of the R-T plot for Bi2-xSbxTe3-ySey was measured to characterize the superconducting pairing mechanism of pressure-induced superconducting phase.

    DOI: 10.1103/PhysRevB.100.094525

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  • Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters Reviewed

    Emanuela Pompei, Claudio Turchetti, Shino Hamao, Akari Miura, Hidenori Goto, Hideki Okamoto, Akihiko Fujiwara, Ritsuko Eguchi, Yoshihiro Kubozono

    Journal of Materials Chemistry C   7 ( 20 )   6022 - 6033   2019.4

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    © 2019 The Royal Society of Chemistry. The transport properties of 3,10-ditetradecylpicene ((C14H29)2-picene) and [6]phenacene thin-film field-effect transistors (FETs) on Si and plastic substrates are reported, in which SiO2 and parylene are used as gate dielectrics, respectively. These devices show p-channel normally-off FET characteristics. A μ value of 1.34 cm2 V-1 s-1 is obtained in the (C14H29)2-picene thin-film FET, where 500 μm thick polyethylene terephthalate (PET) and 1 μm thick parylene are used as the substrate and gate dielectric, respectively. Moreover, excellent FET performance is obtained in the (C14H29)2-picene thin-film FET using a high-k gate dielectric, ZrO2, which is formed on a 350 μm thick PET substrate, showing p-channel normally-off FET properties and low voltage operation. The μ value reaches 6.31 cm2 V-1 s-1 in the FET device. The FET properties of N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDIC8) thin-film FETs formed on PET are also reported, showing n-channel normally-off FET characteristics. We report a bias stress effect on flexible [6]phenacene thin film FETs that are fabricated on a PEN substrate. Two types of experiments are performed for investigating the bias stress effect on FETs, and the bias stress effect under light irradiation is very different from that under no irradiation. This difference is well explained based on the hole-filling of trap states by electron excitation. We show the characteristics of a complementary MOS inverter (CMOS), constituting a [6]phenecene thin-film FET (p-channel) and a PTCDIC8 thin-film FET (n-channel) formed on the PET and PEN substrates, i.e., a flexible CMOS inverter. The maximum gain reaches 300. Furthermore, we report low-voltage operation for the flexible CMOS inverter, where ZrO2 is used as the gate dielectric. Through this study, we have achieved the fabrication of flexible thin-film FETs with a high μ and low voltage operation, and flexible CMOS inverters with a high gain as well as low operation voltage. This study could provide a basis for future practical/human-compatible electronic devices.

    DOI: 10.1039/c8tc05824e

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  • Fermi level tuning of Ag-doped Bi2Se3 topological insulator Reviewed

    Eri Uesugi, Takaki Uchiyama, Hidenori Goto, Hiromi Ota, Teppei Ueno, Hirokazu Fujiwara, Kensei Terashima, Takayoshi Yokoya, Fumihiko Matsui, Jun Akimitsu, Kaya Kobayashi, Yoshihiro Kubozono

    Scientific Reports   9 ( 1 )   5376   2019.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    DOI: 10.1038/s41598-019-41906-7

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    Other Link: http://www.nature.com/articles/s41598-019-41906-7

  • Synthesis of the extended phenacene molecules, [10]phenacene and [11]phenacene, and their performance in a field-effect transistor Reviewed

    Hideki Okamoto, Shino Hamao, Ritsuko Eguchi, Hidenori Goto, Yasuhiro Takabayashi, Paul Yu Hsiang Yen, Luo Uei Liang, Chia Wei Chou, Germar Hoffmann, Shin Gohda, Hisako Sugino, Yen Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    Scientific Reports   9 ( 1 )   4009   2019.3

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    © 2019, The Author(s). The [10]phenacene and [11]phenacene molecules have been synthesized using a simple repetition of Wittig reactions followed by photocyclization. Sufficient amounts of [10]phenacene and [11]phenacene were obtained, and thin-film FETs using these molecules have been fabricated with SiO 2 and ionic liquid gate dielectrics. These FETs operated in p-channel. The averaged measurements of field-effect mobility, <μ>, were 3.1(7) × 10 −2 and 1.11(4) × 10 −1 cm 2 V −1 s −1 , respectively, for [10]phenacene and [11]phenacene thin-film FETs with SiO 2 gate dielectrics. Furthermore, [10]phenacene and [11]phenacene thin-film electric-double-layer (EDL) FETs with ionic liquid showed low-voltage p-channel FET properties, with <μ> values of 3(1) and 1(1) cm 2 V −1 s −1 , respectively. This study also discusses the future utility of the extremely extended π-network molecules [10]phenacene and [11]phenacene as the active layer of FET devices, based on the experimental results obtained.

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  • Preparation and characterization of a new metal-intercalated graphite superconductor Reviewed

    Yang Xiaofan, Taguchi Tomoya, Wang Yanan, He Tong, Uchiyama Takaki, Takai Akihisa, Zhi Lei, Miyazaki Takafumi, Goto Hidenori, Eguchi Ritsuko, Ishii Hirofumi, Liao Yen-Fa, Yamaoka Hitoshi, Kubozono Yoshihiro

    MATERIALS RESEARCH EXPRESS   6 ( 1 )   016003   2018.10

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  • Pressure dependence of superconductivity in low- and high- T c phases of (NH3)yNaxFeSe Reviewed

    Takahiro Terao, Xiaofan Yang, Xiao Miao, Lu Zheng, Hidenori Goto, Takafumi Miyazaki, Hitoshi Yamaoka, Hirofumi Ishii, Yen-Fa Liao, Yoshihiro Kubozono

    Physical Review B   97 ( 9 )   2018.3

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    We prepared two superconducting phases, which are called "low-Tc phase" and "high-Tc phase" of (NH3)yNaxFeSe showing Tc's of 35 and 44 K, respectively, at ambient pressure, and studied the superconducting behavior and structure of each phase under pressure. The Tc of the 35 K at ambient pressure rapidly decreases with increasing pressure up to 10 GPa, and it remains unchanged up to 22 GPa. Finally, superconductivity was not observed down to 1.4 K at 29 GPa, i.e., Tc&lt
    1.4K. The Tc of the 44 K phase also shows a monotonic decrease up to 15 GPa and it weakly decreases up to 25 GPa. These behaviors suggest no pressure-driven high-Tc phase (called "SC-II") between 0 and 25 GPa for the low-Tc and high-Tc phases of (NH3)yNaxFeSe, differing from the behavior of (NH3)yCsxFeSe, which has a pressure-driven high-Tc phase (SC-II) in addition to the superconducting phase (SC-I) observed at ambient and low pressures. The Tc-c phase diagram for both low-Tc and high-Tc phases shows that the Tc can be linearly scaled with c (or FeSe plane spacing), where c is a lattice constant. The reason why a pressure-driven high-Tc phase (SC-II) was found for neither low-Tc nor high-Tc phases of (NH3)yNaxFeSe is fully discussed, suggesting a critical c value as the key to forming the pressure-driven high-Tc phase (SC-II). Finally, the precise Tc-c phase diagram is depicted using the data obtained thus far from FeSe codoped with a metal and NH3 or amine, indicating two distinct Tc-c lines below c=17.5Å.

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  • Pressure-induced superconductivity in AgxBi2-xSe3 Reviewed

    Tong He, Xiaofan Yang, Takahiro Terao, Takaki Uchiyama, Teppei Ueno, Kaya Kobayashi, Jun Akimitsu, Takafumi Miyazaki, Takumi Nishioka, Koji Kimura, Kouichi Hayashi, Naohisa Happo, Hitoshi Yamaoka, Hirofumi Ishii, Yen-Fa Liao, Hiromi Ota, Hidenori Goto, Yoshihiro Kubozono

    Physical Review B   97 ( 10 )   2018.3

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    We investigated the pressure dependence of electric transport and crystal structure of Ag-doped Bi2Se3. In the sample prepared by Ag doping of Bi2Se3, the Bi atom was partially replaced by Ag, i.e., Ag0.05Bi1.95Se3. X-ray diffraction patterns of Ag0.05Bi1.95Se3 measured at 0-30 GPa showed three different structural phases, with rhombohedral, monoclinic, and tetragonal structures forming in turn as pressure increased, and structural phase transitions at 8.8 and 24 GPa. Ag0.05Bi1.95Se3 showed no superconductivity down to 2.0 K at 0 GPa, but under pressure, superconductivity suddenly appeared at 11 GPa. The magnetic field (H) dependence of the superconducting transition temperature Tc was measured at 11 and 20.5 GPa, in order to investigate whether the pressure-induced superconducting phase is explained by either p-wave polar model or s-wave model.

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  • Preparation and characterization of a new graphite superconductor: Ca0.5Sr0.5C6 Reviewed

    Saki Nishiyama, Hidenori Fujita, Masatoshi Hoshi, Xiao Miao, Takahiro Terao, Xiaofan Yang, Takafumi Miyazaki, Hidenori Goto, Tomoko Kagayama, Katsuya Shimizu, Hitoshi Yamaoka, Hirofumi Ishii, Yen-Fa Liao, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   7   2017.8

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    We have produced a superconducting binary-elements intercalated graphite, CaxSr1-xCy, with the intercalation of Sr and Ca in highly-oriented pyrolytic graphite; the superconducting transition temperature, T(c1)was similar to 3 K. The superconducting CaxSr1-xCy sample was fabricated with the nominal x value of 0.8, i.e., Ca0.8Sr0.2Cy. Energy dispersive X-ray (EDX) spectroscopy provided the stoichiometry of Ca0.5(2)Sr0.5(2)C-y for this sample, and the X-ray powder diffraction (XRD) pattern showed that Ca0.5(2)Sr0.5(2)Cy took the SrC6-type hexagonal-structure rather than CaC6-type rhombohedral-structure. Consequently, the chemical formula of CaxSr1-xCy sample could be expressed as 'Ca0.5(2)Sr0.5(2)C6'. The XRD pattern of Ca0.5(2)Sr0.5(2)C6 was measured at 0-31 GPa, showing that the lattice shrank monotonically with increasing pressure up to 8.6 GPa, with the structural phase transition occurring above 8.6 GPa. The pressure dependence of Tc was determined from the DC magnetic susceptibility and resistance up to 15 GPa, which exhibited a positive pressure dependence of T-c up to 8.3 GPa, as in YbC6, SrC6, KC8, CaC6 and Ca0.6K0.4C8. The further application of pressure caused the rapid decrease of Tc. In this study, the fabrication and superconducting properties of new binary-elements intercalated graphite, CaxSr1-xCy, are fully investigated, and suitable combinations of elements are suggested for binaryelements intercalated graphite.

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  • Preparation of new superconductors by metal doping of two-dimensional layered materials using ethylenediamine Reviewed

    Xiao Miao, Takahiro Terao, Xiaofan Yang, Saki Nishiyama, Takafumi Miyazaki, Hidenori Goto, Yoshihiro Iwasa, Yoshihiro Kubozono

    PHYSICAL REVIEW B   96 ( 1 )   2017.7

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    We have studied new superconductors prepared by metal doping of two-dimensional (2D) layered materials, FeSe and FeSe0.5Te0.5, using ethylenediamine (EDA). The superconducting transition temperatures (T(c)s) of metal-doped FeSe and metal-doped FeSe0.5Te0.5, i.e., (EDA)(y)MxFeSe and (EDA)(y)MxFeSe0.5Te0.5 (M: Li, Na, and K), were 31-45 K and 19-25 K, respectively. The stoichiometry of each sample was clarified by energy dispersive x-ray (EDX) spectroscopy, and the x-ray powder diffraction pattern indicated a large expansion of lattice constant c, indicating the cointercalation of metal atoms and EDA. The pressure dependence of superconductivity in (EDA)(y)NaxFeSe0.5Te0.5 has been investigated at a pressure of 0-0.8GPa, showing negative pressure dependence in the same manner as (NH3)(y)NaxFeSe0.5Te0.5. The T-c-c phase diagrams of MxFeSe and MxFeSe0.5Te0.5 were drawn afresh from the T-c and c of (EDA)(y)MxFeSe and (EDA)(y)MxFeSe0.5Te0.5, showing that the T-c increases with increasing c but that extreme expansion of c reverses the T-c trend.

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  • Transistor properties of exfoliated single crystals of 2H-Mo(Se1-x Te-x) 2 ( 0 &lt;= x &lt;= 1) Reviewed

    Eri Uesugi, Xiao Miao, Hiromi Ota, Hidenori Goto, Yoshihiro Kubozono

    PHYSICAL REVIEW B   95 ( 24 )   2017.6

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    Field-effect transistors (FETs) were fabricated using exfoliated single crystals of Mo(Se1-x Te-x)(2) with an x range of 0 to 1, and the transistor properties fully investigated at 295 K in four-terminal measurement mode. The chemical composition and crystal structure of exfoliated single crystals were identified by energy-dispersive x-ray spectroscopy (EDX), single-crystal x-ray diffraction, and Raman scattering, suggesting the 2H - structure in all Mo(Se1-x Te-x)(2). The lattice constants of a and c increase monotonically with increasing x, indicating the substitution of Se by Te. When x &lt; 0.4 in a FET with a thin single crystal of Mo(Se1-x Te-x)(2), n-channel FET properties were observed, changing to p-channelor ambipolar operation for x &gt; 0.4. In contrast, the polarity of a thick single-crystal Mo(Se1-x Te-x)(2) FET did not change despite an increase in x. The change of polarity in a thin single-crystal FET was well explained by the variation of electronic structure. The absence of such change in the thick single-crystal FET can be reasonably interpreted based on the large bulk conduction due to naturally accumulated electrons. The mu value in the thin single-crystal FET showed a parabolic variation, with a minimum mu at around x = 0.4, which probably originates from the disorder of the single crystal caused by the partial replacement of Se by Te, i.e., a disorder that may be due to ionic size difference of Se and Te.

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  • Electrostatic electron-doping yields superconductivity in LaOBiS2 Reviewed

    Eri Uesugi, Saki Nishiyama, Hidenori Goto, Hiromi Ota, Yoshihiro Kubozono

    APPLIED PHYSICS LETTERS   109 ( 25 )   2016.12

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    Electrostatic carrier-doping is attracting serious attention as a meaningful technique for producing interesting electronic states in two-dimensional (2D) layered materials. Ionic-liquid gating can provide the critical carrier density required to induce the metal-insulator transition and superconductivity. However, the physical properties of only a few materials have been controlled by the electrostatic carrier-doping during the past decade. Here, we report an observation of superconductivity in a 2D layered material, LaOBiS2, achieved by the electrostatic electron-doping. The electron doping of LaOBiS2 induced metallic conductivity in the normally insulating LaOBiS2, ultimately led to superconductivity. The superconducting transition temperature, T-c, was 3.6 K, higher than the 2.7K seen in LaO1-xFxBiS2 with an electron-doped BiS2 layer. A rapid drop in resistance (R) was observed at low temperature, which disappeared with the application of high magnetic fields, implying a superconducting state. This study reveals that electron-doping is an important technique for inducing superconductivity in 2D layered BiS2 materials. Published by AIP Publishing.

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  • Superconductivity in (NH3)(y)NaxFeSe0.5Te0.5 Reviewed

    Lu Zheng, Yusuke Sakai, Xiao Miao, Saki Nishiyama, Takahiro Terao, Ritsuko Eguchi, Hidenori Goto, Yoshihiro Kubozono

    PHYSICAL REVIEW B   94 ( 17 )   2016.11

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    Na-intercalated FeSe0.5Te0.5 was prepared using the liquid NH3 technique, and a superconducting phase exhibiting a superconducting transition temperature (T-c) as high as 27 K was discovered. This can be called the high-T-c phase since a 21 K superconducting phase was previously obtained in (NH3)(y)NaxFeSe0.5Te0.5. The chemical composition of the high-T-c phase was determined to be (NH3)(0.61(4))Na-0.63(5) Fe0.85Se0.55(3) Te-0.44(2). The x-ray diffraction patterns of both phases show that a larger lattice constant c (i.e., FeSe0.5Te0.5 plane spacing) produces a higher T-c. This behavior is the same as that of metal-doped FeSe, suggesting that improved Fermi-surface nesting produces the higher T-c. The high-T-c phase converted to the low-T-c phase within several days, indicating that it is a metastable phase. The temperature dependence of resistance for both phases was recorded at different magnetic fields, and the critical fields were determined for both phases. Finally, the T-c versus c phase diagram was prepared for the metal-doped FeSe0.5Te0.5, which is similar to that of metal-doped FeSe, although the T-c is lower.

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  • Chemical analysis of superconducting phase in K-doped picene Reviewed

    Takashi Kambe, Saki Nishiyama, Huyen L. T. Nguyen, Takahiro Terao, Masanari Izumi, Yusuke Sakai, Lu Zheng, Hidenori Goto, Yugo Itoh, Taiki Onji, Tatsuo C. Kobayashi, Hisako Sugino, Shin Gohda, Hideki Okamoto, Yoshihiro Kubozono

    JOURNAL OF PHYSICS-CONDENSED MATTER   28 ( 44 )   2016.11

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    Potassium-doped picene (K(3.0)picene) with a superconducting transition temperature (TC) as high as 14 K at ambient pressure has been prepared using an annealing technique. The shielding fraction of this sample was 5.4% at 0 GPa. The TC showed a positive pressure-dependence and reached 19 K at 1.13 GPa. The shielding fraction also reached 18.5%. To investigate the chemical composition and the state of the picene skeleton in the superconducting sample, we used energy-dispersive x-ray (EDX) spectroscopy, MALDI-time-of-flight (MALDI-TOF) mass spectroscopy and x-ray diffraction (XRD). Both EDX and MALDI-TOF indicated no contamination with materials other than K-doped picene or K-doped picene fragments, and supported the preservation of the picene skeleton. However, it was also found that a magnetic K-doped picene sample consisted mainly of picene fragments or K-doped picene fragments. Thus, removal of the component contributing the magnetic quality to a superconducting sample should enhance the volume fraction.

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  • Photoelectron Holographic Atomic Arrangement Imaging of Cleaved Bimetal-intercalated Graphite Superconductor Surface Reviewed

    Fumihiko Matsui, Ritsuko Eguchi, Saki Nishiyama, Masanari Izumi, Eri Uesugi, Hidenori Goto, Tomohiro Matsushita, Kenji Sugita, Hiroshi Daimon, Yuji Hamamoto, Ikutaro Hamada, Yoshitada Morikawa, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   6   2016.11

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    From the C 1s and K 2p photoelectron holograms, we directly reconstructed atomic images of the cleaved surface of a bimetal-intercalated graphite superconductor, (Ca, K) C-8, which differed substantially from the expected bulk crystal structure based on x-ray diffraction (XRD) measurements. Graphene atomic images were collected in the in-plane cross sections of the layers 3.3 angstrom and 5.7 angstrom above the photoelectron emitter C atom and the stacking structures were determined as AB-and AA-type, respectively. The intercalant metal atom layer was found between two AA-stacked graphenes. The K atomic image revealing 2 x 2 periodicity, occupying every second centre site of C hexagonal columns, was reconstructed, and the Ca 2p peak intensity in the photoelectron spectra of (Ca, K) C-8 from the cleaved surface was less than a few hundredths of the K 2p peak intensity. These observations indicated that cleavage preferentially occurs at the KC8 layers containing no Ca atoms.

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  • Recent progress on carbon-based superconductors Reviewed

    Yoshihiro Kubozono, Ritsuko Eguchi, Hidenori Goto, Shino Hamao, Takashi Kambe, Takahiro Terao, Saki Nishiyama, Lu Zheng, Xiao Miao, Hideki Okamoto

    JOURNAL OF PHYSICS-CONDENSED MATTER   28 ( 33 )   2016.8

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    This article reviews new superconducting phases of carbon-based materials. During the past decade, new carbon-based superconductors have been extensively developed through the use of intercalation chemistry, electrostatic carrier doping, and surface-proving techniques. The superconducting transition temperature T-c of these materials has been rapidly elevated, and the variety of superconductors has been increased. This review fully introduces graphite, graphene, and hydrocarbon superconductors and future perspectives of high-T-c superconductors based on these materials, including present problems. Carbon-based superconductors show various types of interesting behavior, such as a positive pressure dependence of T-c. At present, experimental information on superconductors is still insufficient, and theoretical treatment is also incomplete. In particular, experimental results are still lacking for graphene and hydrocarbon superconductors. Therefore, it is very important to review experimental results in detail and introduce theoretical approaches, for the sake of advances in condensed matter physics. Furthermore, the recent experimental results on hydrocarbon superconductors obtained by our group are also included in this article. Consequently, this review article may provide a hint to designing new carbon-based superconductors exhibiting higher T-c and interesting physical features.

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  • Emergence of superconductivity in (NH3)(y)MxMoSe2 (M: Li, Na and K) Reviewed

    Xiao Miao, Saki Nishiyama, Lu Zheng, Hidenori Goto, Ritsuko Eguchi, Hiromi Ota, Takashi Kambe, Kensei Terashima, Takayoshi Yokoya, Huyen T. L. Nguyen, Tomoko Kagayama, Naohisa Hirao, Yasuo Ohishi, Hirofumi Ishii, Yen-Fa Liao, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   6   2016.7

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    We report syntheses of new superconducting metal-doped MoSe2 materials (MxMoSe2). The superconducting MxMoSe2 samples were prepared using a liquid NH3 technique, and can be represented as '(NH3)(y)MxMoSe2'. The T(c)s of these materials were approximately 5.0 K, independent of x and the specific metal atom. X-ray diffraction patterns of (NH3)(y)NaxMoSe2 were recorded using polycrystalline powders. An increase in lattice constant c showed that the Na atom was intercalated between MoSe2 layers. The x-independence of c was observed in (NH3)(y)NaxMoSe2, indicating the formation of a stoichiometric compound in the entire x range, which is consistent with the x-independence of T-c. A metallic edge of the Fermi level was observed in the photoemission spectrum at 30 K, demonstrating its metallic character in the normal state. Doping of MoSe2 with Li and K also yielded superconductivity. Thus, MoSe2 is a promising material for designing new superconductors, as are other transition metal dichalcogenides.

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  • Fabrication of new superconducting materials, CaxK1-xCy (0 &lt; x &lt; 1) Reviewed

    Huyen T. L. Nguyen, Saki Nishiyama, Masanari Izumi, Lu Zheng, Xiao Miao, Yusuke Sakai, Hidenori Goto, Naohisa Hirao, Yasuo Ohishi, Tomoko Kagayama, Katsuya Shimizu, Yoshihiro Kubozono

    CARBON   100   641 - 646   2016.4

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    Metal intercalation to graphite produces various types of superconductors. The highest superconducting transition temperature T-c (onset temperature, T-c(onset), of 11.5 K) was found in Ca intercalated graphite, denoted CaC6.T-c(onset) increased up to 15.1 K at 7.5 GPa, implying a positive pressure dependence. However, no new metal-intercalated graphite superconductors with T-c(onset) higher than 11.5 K at ambient pressure have so far been reported. To search for new graphite superconductors, we successfully synthesized binary-element-intercalated graphite, CaxK1-xCy. Their structure resembles that of KC8. T-c increased continuously with increasing x. Furthermore, the pressure dependence of T-c in Ca0.6K0.4C8 was investigated over a wide pressure range from 0-43 GPa. T-c (= 9.6 K at 0 GPa) increased to 11.6 K at 3.3 GPa, and decreased to 2.0 K at 41 GPa. This behavior is similar to that of CaC6, albeit with a lower maximum T-c. Xray diffraction patterns were measured under high pressures of 0-24 GPa, and suggest a structural transition at 15 GPa. Evidence is given for superconducting graphite involving binary metal intercalation. (C) 2016 Elsevier Ltd. All rights reserved.

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  • Correlation of superconductivity with crystal structure in (NH3)(y)CsxFeSe Reviewed

    Lu Zheng, Xiao Miao, Yusuke Sakai, Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Saki Nishiyama, Kunihisa Sugimoto, Akihiko Fujiwara, Yoshihiro Kubozono

    PHYSICAL REVIEW B   93 ( 10 )   2016.3

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    The superconducting transition temperature T-c of ammoniated metal-doped FeSe (NH3)(y)MxFeSe (M: metal atom) has been scaled with the FeSe plane spacing, and it has been suggested that the FeSe plane spacing depends on the location of metal atoms in (NH3)(y)MxFeSe crystals. Although the crystal structure of (NH3)(y)LixFeSe exhibiting a high T-c (similar to 44 K) was determined from neutron diffraction, the structure of (NH3)(y)MxFeSe exhibiting a low T-c (similar to 32 K) has not been determined thus far. Here, we determined the crystal structure of (NH3)(y)Cs0.4FeSe (T-c = 33 K) through the Rietveld refinement of the x-ray diffraction (XRD) pattern measured with synchrotron radiation at 30 K. The XRD pattern was analyzed based on two different models, on-center and off-center, under a space group of 14/mmm. In the on-center structure, the Cs occupies the 2a site and the N of NH3 may occupy either the 4c or 2b site, or both. In the off-center structure, the Cs may occupy either the 4c or 2b site, or both, while the N occupies the 2a site. Only an on-center structure model in which the Cs occupies the 2a and the N of NH3 occupies the 4c site provided reasonable results in the Rietveld analysis. Consequently, we concluded that (NH3)(y)Cs0.4FeSe can be assigned to the on-center structure, which produces a smaller FeSe plane spacing leading to the lower T-c.

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  • Synthesis and transistor application of the extremely extended phenacene molecule, [9] phenacene Reviewed

    Yuma Shimo, Takahiro Mikami, Shino Hamao, Hidenori Goto, Hideki Okamoto, Ritsuko Eguchi, Shin Gohda, Yasuhiko Hayashi, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   6   2016.2

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    the widespread interest in the chemistry, physics and materials science of such molecules and their potential applications. In particular, extended phenacene molecules, consisting of coplanar fused benzene rings in a repeating W-shaped pattern have attracted much attention because field-effect transistors (FETs) using phenacene molecules show promisingly high performance. Until now, the most extended phenacene molecule available for transistors was [8] phenacene, with eight benzene rings, which showed very high FET performance. Here, we report the synthesis of a more extended phenacene molecule, [9] phenacene, with nine benzene rings. Our synthesis produced enough [9] phenacene to allow the characterization of its crystal and electronic structures, as well as the fabrication of FETs using thin-film and single-crystal [9] phenacene. The latter showed a field-effect mobility as high as 18 cm(2) V-1 s(-1), which is the highest mobility realized so far in organic single-crystal FETs.

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  • Application of organic semiconductors toward transistors Reviewed

    Yoshihiro Kubozono, Xuexia He, Shino Hamao, Eri Uesugi, Yuma Shimo, Takahiro Mikami, Hidenori Goto, Takashi Kambe

    Nanodevices for Photonics and Electronics: Advances and Applications   351 - 383   2016.1

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  • 19pBG-9 Characterization of 14 K superconducting phase of K-doped picene

    Kubozono Yoshihiro, Terao Takahiro, Nishiyama Saki, Zheng Lu, Goto Hidenori, Eguchi Ritsuko, Okamoto Hideki, Kobayashi Tatsuo C., Kambe Takashi, Sugino Hisako, Gohda Shin

    Meeting Abstracts of the Physical Society of Japan   71   1851 - 1851   2016

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  • 21aAK-6 Superconductivity in 2D layered Mo dichalcogenides

    Miao Xiao, Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   71   2150 - 2150   2016

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    DOI: 10.11316/jpsgaiyo.71.1.0_2150

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  • 22aAS-6 Band engineering of graphene by molecular adsorption

    Akiyoshi H., Goto H., Uesugi E., Oyama A., Eguchi R., Saito G., Yoshida Y., Osada H., Nishikawa T., Kubozono Y.

    Meeting Abstracts of the Physical Society of Japan   71   1929 - 1929   2016

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  • 21aAK-7 Field-induced superconductivity in two-dimensional materials by electrostatic-carrier accumulation

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   71   2151 - 2151   2016

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    DOI: 10.11316/jpsgaiyo.71.1.0_2151

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  • 22aBN-6 Emergence of a wide variety of superconductors prepared by a metal doping of LnOBiS_2 (Ln: lanthanide atoms)

    Nishiyama S., Uesugi E., Nguyen Thi Le Huyen, Kagayama T., Shimizu K., Goto H., Eguchi R., Kitagawa S., Kobayashi T., Kubozono Y.

    Meeting Abstracts of the Physical Society of Japan   71   2377 - 2377   2016

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    DOI: 10.11316/jpsgaiyo.71.1.0_2377

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  • Emergence of Multiple Superconducting Phases in (NH3)(y)MxFeSe (M: Na and Li) Reviewed

    Lu Zheng, Xiao Miao, Yusuke Sakai, Masanari Izumi, Hidenori Goto, Saki Nishiyama, Eri Uesugi, Yuichi Kasahara, Yoshihiro Iwasa, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   5   2015.8

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    We previously discovered multiple superconducting phases in the ammoniated Na-doped FeSe material, (NH3)(y)NaxFeSe. To clarify the origin of the multiple superconducting phases, the variation of T-c was fully investigated as a function of x in (NH3)(y)NaxFeSe. The 32 K superconducting phase is mainly produced in the low-x region below 0.4, while only a single phase is observed at x = 1.1, with T-c = 45 K, showing that the T-c depends significantly on x, but it changes discontinuously with x. The crystal structure of (NH3)(y)NaxFeSe does not change as x increases up to 1.1, i.e., the space group of I4/mmm. The lattice constants, a and c, of the low-T-c phase (T-c = 32.5 K) are 3.9120(9) and 14.145(8) angstrom, respectively, while a = 3.8266(7) angstrom and c = 17.565(9) angstrom for the high-T-c phase (similar to 46 K). The c increases in the high T-c phase, implying that the T-c is directly related to c. In (NH3)(y)LixFeSe material, the T-c varies continuously within the range of 39 to 44 K with changing x. Thus, the behavior of T-c is different from that of (NH3)(y)NaxFeSe. The difference may be due to the difference in the sites that the Na and Li occupy.

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  • 1D and 2D Bi Compounds in Field-Effect Transistors Reviewed

    Eri Uesugi, Saki Nishiyama, Hidehiko Akiyoshi, Hidenori Goto, Yoji Koike, Kazuyoshi Yamada, Yoshihiro Kubozono

    ADVANCED ELECTRONIC MATERIALS   1 ( 8 )   2015.8

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  • Superconductivity in aromatic hydrocarbons Reviewed

    Yoshihiro Kubozono, Hidenori Goto, Taihei Jabuchi, Takayoshi Yokoya, Takashi Kambe, Yusuke Sakai, Masanari Izumi, Lu Zheng, Shino Hamao, Huyen L. T. Nguyen, Masafumi Sakata, Tomoko Kagayama, Katsuya Shimizu

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   514   199 - 205   2015.7

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    'Aromatic hydrocarbon' implies an organic molecule that satisfies the (4n + 2) pi-electron rule and consists of benzene rings. Doping solid aromatic hydrocarbons with metals provides the superconductivity. The first discovery of such superconductivity was made for K-doped picene (K(x)picene, five benzene rings). Its superconducting transition temperatures (T-c's) were 7 and 18 K. Recently, we found a new superconducting K(x)picene phase with a T-c as high as 14 K, so we now know that K(x)picene possesses multiple superconducting phases. Besides K(x)picene, we discovered new superconductors such as Rb(x)picene and Caxpicene. A most serious problem is that the shielding fraction is &lt;= 615% for K(x)picene and Rb(x)picene, and it is often similar to 1% for other superconductors. Such low shielding fractions have made it difficult to determine the crystal structures of superconducting phases. Nevertheless, many research groups have expended a great deal of effort to make high quality hydrocarbon superconductors in the five years since the discovery of hydrocarbon superconductivity. At the present stage, superconductivity is observed in certain metaldoped aromatic hydrocarbons (picene, phenanthrene and dibenzopentacene), but the shielding fraction remains stubbornly low. The highest priority research area is to prepare aromatic superconductors with a high superconducting volume-fraction. Despite these difficulties, aromatic superconductivity is still a core research target and presents interesting and potentially breakthrough challenges, such as the positive pressure dependence of T-c that is clearly observed in some phases of aromatic hydrocarbon superconductors, suggesting behavior not explained by the standard BCS picture of superconductivity. In this article, we describe the present status of this research field, and discuss its future prospects. (C) 2015 Elsevier B.V. All rights reserved.

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  • Emergence of double-dome superconductivity in ammoniated metal-doped FeSe Reviewed

    Masanari Izumi, Lu Zheng, Yusuke Sakai, Hidenori Goto, Masafumi Sakata, Yuki Nakamoto, Huyen L. T. Nguyen, Tomoko Kagayama, Katsuya Shimizu, Shingo Araki, Tatsuo C. Kobayashi, Takashi Kambe, Dachun Gu, Jing Guo, Jing Liu, Yanchun Li, Liling Sun, Kosmas Prassides, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   5   2015.4

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    The pressure dependence of the superconducting transition temperature (T-c) and unit cell metrics of tetragonal (NH3)(y)Cs0.4FeSe were investigated in high pressures up to 41 GPa. The T-c decreases with increasing pressure up to 13 GPa, which can be clearly correlated with the pressure dependence of c (or FeSe layer spacing). The T-c vs. c plot is compared with those of various (NH3)(y)MxFeSe (M: metal atoms) materials exhibiting different T-c and c, showing that the T-c is universally related to c. This behaviour means that a decrease in two-dimensionality lowers the T-c. No superconductivity was observed down to 4.3 K in (NH3)(y)Cs0.4FeSe at 11 and 13 GPa. Surprisingly, superconductivity re-appeared rapidly above 13 GPa, with the T-c reaching 49 K at 21 GPa. The appearance of a new superconducting phase is not accompanied by a structural transition, as evidenced by pressure-dependent XRD. Furthermore, T-c slowly decreased with increasing pressure above 21 GPa, and at 41 GPa superconductivity disappeared entirely at temperatures above 4.9 K. The observation of a double-dome superconducting phase may provide a hint for pursuing the superconducting coupling-mechanism of ammoniated/non-ammoniated metal-doped FeSe.

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  • Erratum: Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes (Journal of Materials Chemistry C (2015) 3 DOI: 10.1039/c4tc02413c) Reviewed

    Yoshihiro Kubozono, Keita Hyodo, Hiroki Mori, Shino Hamao, Hidenori Goto, Yasushi Nishihara

    Journal of Materials Chemistry C   3 ( 12 )   2960   2015.3

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    DOI: 10.1039/c5tc90044a

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  • 16pDA-5 Electric properties of two-dimensional layered materials controlled by electrostatic carrier doping

    Uesugi E., Miao Xiao, Nishiyama S., Eguchi R., Goto H., Kubozono Y.

    Meeting Abstracts of the Physical Society of Japan   70   1719 - 1719   2015

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    DOI: 10.11316/jpsgaiyo.70.2.0_1719

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  • 16pDA-4 Syntheses of superconducting M_xLnOBiS_2(M: alkali metal atom, Ln: lanthanide atom)

    Nishiyama S., Uesugi E., Goto H., Eguchi R., Kubozono Y.

    Meeting Abstracts of the Physical Society of Japan   70   1718 - 1718   2015

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    DOI: 10.11316/jpsgaiyo.70.2.0_1718

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  • Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b '] dithiophenes (vol 3, pg 2413, 2015) Reviewed

    Yoshihiro Kubozono, Keita Hyodo, Hiroki Mori, Shino Hamao, Hidenori Goto, Yasushi Nishihara

    JOURNAL OF MATERIALS CHEMISTRY C   3 ( 12 )   2960 - 2960   2015

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  • Transistors fabricated using the single crystals of [8]phenacene Reviewed

    Yuma Shimo, Takahiro Mikami, Hiroto T. Murakami, Shino Hamao, Hidenori Goto, Hideki Okamoto, Shin Gohda, Kaori Sato, Antonio Cassinese, Yasuhiko Hayashi, Yoshihiro Kubozono

    JOURNAL OF MATERIALS CHEMISTRY C   3 ( 28 )   7370 - 7378   2015

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    Field-effect transistors (FETs) with single crystals of a new phenacene-type molecule, [8]phenacene, were fabricated and characterized. This new molecule consists of a phenacene core of eight benzene rings, with an extended p-conjugated system, which was recently synthesized for use in an FET by our group. The FET characteristics of an [8]phenacene single-crystal FET with SiO2 gate dielectrics show typical p-channel properties with an average field-effect mobility, &lt;mu &gt;, as high as 3(2) cm(2) V-1 s(-1) in two-terminal measurement mode, which is a relatively high value for a p-channel single-crystal FET. The hmi was determined to be 6(2) cm(2) V-1 s(-1) in four-terminal measurement mode. Low-voltage operation was achieved with PbZr0.52Ti0.48O3 (PZT) as the gate dielectric, and an electric-double-layer (EDL) capacitor. The &lt;mu &gt; and average values of absolute threshold voltage, &lt;vertical bar V-th vertical bar &gt;, were 1.6(4) cm(2) V-1 s(-1) and 5(1) V, respectively, for PZT, and 4(2) x 10(-1) cm(2) V-1 s(-1) and 2.38(4) V, respectively, for the EDL capacitor; these values were evaluated in two-terminal measurement mode. The inverter circuit was fabricated using [8]phenacene and N, N'-1H, 1H-perfluorobutyldicyanoperylene-carboxydi-imide single-crystal FETs. This is the first logic gate circuit using phenacene molecules. Furthermore, the relationship between mu and the number of benzene rings was clarified based on this study and the previous studies on phenacene single-crystal FETs.

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  • Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b ']dithiophenes Reviewed

    Yoshihiro Kubozono, Keita Hyodo, Hiroki Mori, Shino Hamao, Hidenori Goto, Yasushi Nishihara

    JOURNAL OF MATERIALS CHEMISTRY C   3 ( 10 )   2413 - 2421   2015

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    Field-effect transistors (FETs) have been fabricated with thin films of a series of 2,9-dialkylated phenanthro [1,2-b:8,7-b'] dithiophene derivatives (C-n-PDTs). The FET characteristics of C-n-PDT thin-film FETs with an SiO2 gate dielectric as well as high-k gate dielectrics were recorded, and the dependence of the field-effect mobility, mu, on the number (n) of carbon atoms in the alkyl chains was investigated, showing that the 2,9-didodecylphenanthro[1,2-b:8,7-b'] dithiophene (C-12-PDT) thin-film FET displays superior properties, with mu s as high as 1.8 cm(2) V-1 s(-1) for the SiO2 gate dielectric and 2.2 cm(2) V-1 s(-1) for the HfO2 gate dielectric. The average mu values, &lt;mu &gt;, reach 1.1(5) and 1.8(6) cm(2) V-1 s(-1), respectively, for the SiO2 and ZrO2 gate dielectrics. Low-voltage operation, showing an absolute average threshold voltage &lt;|V-th|&gt; of similar to 11 V, was implemented, together with the above high &lt;mu &gt; of similar to 2 cm(2) V-1 s(-1). Also, a flexible FET was fabricated with a parylene gate dielectric. The results of this study show the potential of the C-12-PDT molecule for application in a high-performance transistor.

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  • 18aDB-8 High-T_c phase of (NH_3)_yNa_xFeSe_<0.5>Te_<0.5>

    Zheng Lu, Miao Xiao, Eguchi Ritsuko, Goto Hidenori, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   70   1994 - 1994   2015

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    DOI: 10.11316/jpsgaiyo.70.2.0_1994

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  • 18aDB-9 Syntheses of new superconductors, M_xFeSe_<1-z>Te_z, M_xMo(Se_<1-z>Te_z)_2 and M_xW(Se_<1-z>Te_z)_2

    Miao Xiao, Zheng Lu, Nishiyama Saki, Goto Hidenori, Eguchi Ritsuko, Ota Hiromichi, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   70   1995 - 1995   2015

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    DOI: 10.11316/jpsgaiyo.70.2.0_1995

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  • Transistor Application of Phenacene Molecules and Their Characteristics Reviewed

    Yoshihiro Kubozono, Xuexia He, Shino Hamao, Kazuya Teranishi, Hidenori Goto, Ritsuko Eguchi, Takashi Kambe, Shin Gohda, Yasushi Nishihara

    EUROPEAN JOURNAL OF INORGANIC CHEMISTRY   ( 24 )   3806 - 3819   2014.8

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    The characteristics of field-effect transistors (FETs) fabricated from thin films and single crystals of phenacene molecules are fully reported in this review together with the electronic and crystal structures of phenacenes. Phenacene molecules possess a low HOMO level and a wide band gap. The highest mobility observed in the phenacene thin-film FETs is 7.4 cm(2)V(-1)s(-1) for [6]phenacene, and in single-crystal FETs the highest value is 6.3 cm(2)V(-1)s(-1) for [7]phenacene. The phenacene thin-film FETs show O-2-sensing properties unlike their single-crystal FETs. The bias-stress effect is fully investigated for phenacene single-crystal FETs. Furthermore, the low-voltage operation of phenacene single-crystal FETs with electric-double-layer (EDL) capacitors is reported. The temperature dependence of phenacene single-crystal FETs is reported to clarify the transport mechanism, which is suggestive of band-like transport.

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  • An Extended Phenacene-type Molecule, [8] Phenacene: Synthesis and Transistor Application Reviewed

    Hideki Okamoto, Ritsuko Eguchi, Shino Hamao, Hidenori Goto, Kazuma Gotoh, Yusuke Sakai, Masanari Izumi, Yutaka Takaguchi, Shin Gohda, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   4   2014.6

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    A new phenacene-type molecule, [8] phenacene, which is an extended zigzag chain of coplanar fused benzene rings, has been synthesised for use in an organic field-effect transistor (FET). The molecule consists of a phenacene core of eight benzene rings, which has a lengthy pi-conjugated system. The structure was verified by elemental analysis, solid-state NMR, X-ray diffraction (XRD) pattern, absorption spectrum and photoelectron yield spectroscopy (PYS). This type of molecule is quite interesting, not only as pure chemistry but also for its potential electronics applications. Here we report the physical properties of [8] phenacene and its FET application. An [8] phenacene thin-film FET fabricated with an SiO2 gate dielectric showed clear p-channel characteristics. The highest m achieved in an [8] phenacene thin-film FET with an SiO2 gate dielectric is 1.74 cm(2) V-1 s(-1), demonstrating excellent FET characteristics; the average mu was evaluated as 1.2(3) cm(2) V-1 s(-1). The mu value in the [8] phenacene electric-double-layer FET reached 16.4 cm(2) V-1 s(-1), which is the highest reported in EDL FETs based on phenacene-type molecules; the average m was evaluated as 8(5) cm(2) V-1 s(-1). The mu values recorded in this study show that [8] phenacene is a promising molecule for transistor applications.

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  • Transistor application of alkyl-substituted picene Reviewed

    Hideki Okamoto, Shino Hamao, Hidenori Goto, Yusuke Sakai, Masanari Izumi, Shin Gohda, Yoshihiro Kubozono, Ritsuko Eguchi

    SCIENTIFIC REPORTS   4   2014.5

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    Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)(2), formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, m, in a picene-(C14H29)(2) thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached similar to 21 cm(2) V-1 s(-1), which is the highest mu value recorded for organic thin-film FETs; the averagem mu value (&lt;mu &gt;) evaluated from twelve FET devices was 14(4) cm(2)V(-1) s(-1). The, m. values for picene-(C14H29)(2) thin- film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm(2) V-1 s(-1), and the lowest absolute threshold voltage, vertical bar V-th vertical bar, (5.2 V) was recorded with a PZT gate dielectric; the average jVthj for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)(2) FET was also fabricated with an SiO2 gate dielectric, yielding mu = 3.4 x 10(-2) cm(2) V-1 s(-1). These results verify the effectiveness of picene-(C14H29)(2) for electronics applications.

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  • Superconducting phases in (NH3)(y)MxFeSe1-zTez (M = Li, Na, and Ca) Reviewed

    Sakai Yusuke, Zheng Lu, Izumi Masanari, Teranishi Kazuya, Eguchi Ritsuko, Goto Hidenori, Onji Taiki, Araki Shingo, Kobayashi Tatsuo C, Kubozono Yoshihiro

    PHYSICAL REVIEW B   89 ( 14 )   144509   2014.4

  • Superconducting phases in (NH3)(y)MxFeSe1-zTez (M = Li, Na, and Ca) Reviewed

    Yusuke Sakai, Lu Zheng, Masanari Izumi, Kazuya Teranishi, Ritsuko Eguchi, Hidenori Goto, Taiki Onji, Shingo Araki, Tatsuo C. Kobayashi, Yoshihiro Kubozono

    PHYSICAL REVIEW B   89 ( 14 )   2014.4

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    Superconducting phases of (NH3)(y)MxFeSe1-z Te-z have been synthesized by the intercalation of metal atoms (M: Li, Na, Ca) into FeSe and FeSe0.5Te0.5 using a low-temperature liquid NH3 technique. The superconducting transition temperature (T-c) is 31.5 K for Na-doped FeSe, and for Li-, Na-, and Ca-doped FeSe0.5Te0.5 it is 26, 22, and 17 K, respectively. The 31.5 K superconducting is the superconducting phase in ammoniated Na-doped FeSe. The T-c is lower than that (onset T-c = 46 K) of the superconducting phase reported previously. The reason why the T-c of this phase is lower is discussed based on the structure. The pressure dependences of T-c in the (NH3)(y)Na0.5FeSe and (NH3)(y)Na0.4FeSe0.5Te0.5 samples have been measured and a negative pressure dependence is observed; i.e., a decrease in lattice constant c leads to a decrease in Tc, consistent with the behavior of (NH3)(y)Cs0.4FeSe reported previously by our group. Furthermore, the magnetic behavior of (NH3)(y)Na0.4FeSe0.5Te0.5 has been fully investigated at different applied magnetic fields (H) to determine the critical magnetic This is a successful metal intercalation into FeSe1-z Te-z (z not equal 0) and an observation of superconductivity.

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  • Systematic Control of Hole-Injection Barrier Height with Electron Acceptors in [7]phenacene Single-Crystal Field-Effect Transistors Reviewed

    Xuexia He, Shino Hamao, Ritsuko Eguchi, Hidenori Goto, Yukihiro Yoshida, Gunzi Saito, Yoshihiro Kubozono

    JOURNAL OF PHYSICAL CHEMISTRY C   118 ( 10 )   5284 - 5293   2014.3

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    The interface between the single crystal and the Au source/drain electrodes in [7]phenacene single-crystal field-effect transistors (FETs) was modified using 14 electron acceptors with different redox potentials. The effective hole-injection barrier heights (phi(eff)(h)s) for [7]phenacene single-crystal FETs have been plotted as a function of the redox potential (E-redox) of the inserted electron acceptors, showing that the phi(eff)(h) decreases with increasing E-redox. The highest phi(eff)(h) occurs without inserted material (electron acceptors), and this deviates from the otherwise linear relationship between phi(eff)(h) and E-redox. We have investigated the temperature dependence of phi(eff)(h) in an attempt to determine why the phi(eff)(h) value without inserted material is so high, which suggests that no additional barrier, such as a tunneling barrier, is formed in the device. We conclude that the pure Schottky barrier in this FET is lowered very significantly by the insertion of an electron acceptor. The gate-voltage dependence of phi(eff)(h) suggests a slight reduction of Schottky barrier height owing to hole accumulation. Furthermore, the clear correlation between threshold voltage and redox potential suggests a relationship between threshold voltage and phi(eff)(h). Controlling the interface between the single crystal and the source/drain electrodes in this FET produced a very high mu (similar to 6.9 cm(2) V-1 s(-1)) and low absolute threshold voltage, i.e., excellent FET characteristics. The topological characterization of inserted materials on [7]phenacene single crystals are achieved using atomic force microscope (AFM) and X-ray diffraction (XRD). The results show that the single crystals are not completely covered with the inserted materials and the inhomogeneous modification of inserted materials for single crystals effectively leads to the drastic change of hole-injection barrier between source/drain electrodes and single-crystal active layer.

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  • Superconductivity in (NH3)yCs0.4FeSe Reviewed

    Lu Zheng, Masanari Izumi, Yusuke Sakai, Ritsuko Eguchi, Hidenori Goto, Yasuhiro Takabayashi, Takashi Kambe, Taiki Onji, Shingo Araki, Tatsuo C. Kobayashi, Jungeun Kim, Akihiko Fujiwara, Yoshihiro Kubozono

    Physical Review B - Condensed Matter and Materials Physics   88 ( 9 )   2013.9

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    Alkali-metal-intercalated FeSe materials, (NH3) yM0.4FeSe (M: K, Rb, and Cs), have been synthesized using the liquid NH3 technique. (NH3)yCs 0.4FeSe shows a superconducting transition temperature (T c) as high as 31.2 K, which is higher by 3.8 K than the Tc of nonammoniated Cs0.4FeSe. The Tcs of (NH 3)yK0.4FeSe and (NH3) yRb0.4FeSe are almost the same as those of nonammoniated K0.4FeSe and Rb0.4FeSe. The Tc of (NH 3)yCs0.4FeSe shows a negative pressure dependence. A clear correlation between Tc and lattice constant c is found for ammoniated metal-intercalated FeSe materials, suggesting a correlation between Fermi-surface nesting and superconductivity. © 2013 American Physical Society.

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  • Fabrication of single crystal field-effect transistors with phenacene-type molecules and their excellent transistor characteristics Reviewed

    Xuexia He, Ritsuko Eguchi, Hidenori Goto, Eri Uesugi, Shino Hamao, Yasuhiro Takabayashi, Yoshihiro Kubozono

    ORGANIC ELECTRONICS   14 ( 6 )   1673 - 1682   2013.6

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    Single crystal field-effect transistors (FETs) using [6] phenacene and [7] phenacene show p-channel FET characteristics. Field-effect mobilities, mu s, as high as 5.6 x 10 (1) cm(2) V (1) s (1) in a [6] phenacene single crystal FET with an SiO2 gate dielectric and 2.3 cm(2) V (1) s (1) in a [7] phenacene single crystal FET were recorded. In these FETs, 7,7,8,8-tetracyanoquinodimethane (TCNQ) was inserted between the Au source/drain electrodes and the single crystal to reduce hole-injection barrier heights. The mu reached 3.2 cm(2) V (1) s (1) in the [7] phenacene single crystal FET with a Ta2O5 gate dielectric, and a low absolute threshold voltage vertical bar V-TH vertical bar (6.3 V) was observed. Insertion of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) in the interface produced very a high mu value (4.7-6.7 cm(2) V (1) s (1)) in the [7] phenacene single crystal FET, indicating that F(4)TCNQ was better for interface modification than TCNQ. A single crystal electric double-layer FET provided mu as high as 3.8 x 10 (1) cm(2) V (1) s (1) and vertical bar V-TH vertical bar as low as 2.3 V. These results indicate that [6] phenacene and [7] phenacene are promising materials for future practical FET devices, and in addition we suggest that such devices might also provide a research tool to investigate a material's potential as a superconductor and a possible new way to produce the superconducting state. (C) 2013 Elsevier B.V. All rights reserved.

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  • Observation of zero resistivity in K-doped picene Reviewed

    Teranishi Kazuya, He Xuexia, Sakai Yusuke, Izumi Masanari, Goto Hidenori, Eguchi Ritsuko, Takabayashi Yasuhiro, Kambe Takashi, Kubozono Yoshihiro

    PHYSICAL REVIEW B   87 ( 6 )   06505   2013.2

  • Observation of zero resistivity in K-doped picene Reviewed

    Kazuya Teranishi, Xuexia He, Yusuke Sakai, Masanari Izumi, Hidenori Goto, Ritsuko Eguchi, Yasuhiro Takabayashi, Takashi Kambe, Yoshihiro Kubozono

    PHYSICAL REVIEW B   87 ( 6 )   2013.2

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    We report the observation of zero resistivity (rho) in a hydrocarbon superconductor, and describe the temperature dependence of rho in metal-doped hydrocarbons. The resistivity of K-doped picene (K(x)picene) has been recorded from pellet samples in a four-terminal measurement mode. A drop in rho is observed below 7 K for K(3.1)picene and below 11 K for K(3.5)picene, which clearly displays zero resistivity. The resistivity drop at 7 K is consistent with the superconducting critical temperature (T-c) obtained from the magnetic susceptibility of the 7 K phase of K(3)picene, while the drop at 11 K is inconsistent with the T-c's of both the 7 and 18 K phases of K(3)picene reported previously. The temperature dependence of rho for both samples exhibits granular-metal-like behavior in the normal state. DOI: 10.1103/PhysRevB.87.060505

    DOI: 10.1103/PhysRevB.87.060505

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  • Phenanthro[1,2-b: 8,7-b '] dithiophene: a new picene-type molecule for transistor applications Reviewed

    Yasushi Nishihara, Megumi Kinoshita, Keita Hyodo, Yasuhiro Okuda, Ritsuko Eguchi, Hidenori Goto, Shino Hamao, Yasuhiro Takabayashi, Yoshihiro Kubozono

    RSC ADVANCES   3 ( 42 )   19341 - 19347   2013

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ROYAL SOC CHEMISTRY  

    A new picene-type molecule, phenanthro[1,2-b : 8,7-b'] dithiophene, has been synthesized for use in organic field-effect transistors (OFETs). The molecule consists of a phenanthrene core with two thiophene rings fused on the ends. This molecule can be recognized as a picene analogue. The electronic structure of the molecule was determined by its optical absorption spectrum together with a theoretical calculation based on density functional theory (DFT). The topological and electronic structures of thin films produced by direct thermal evaporation of the compounds and by deposition from a solution were characterized by optical imaging, X-ray diffraction, and atomic force microscopy. FET devices were fabricated with these thin films, and showed field-effect mobility as high as 10(-1) cm(2) V-1 s(-1).

    DOI: 10.1039/c3ra44050h

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  • Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films Reviewed

    Ritsuko Eguchi, Xuexia He, Shino Hamao, Hidenori Goto, Hideki Okamoto, Shin Gohda, Kaori Sato, Yoshihiro Kubozono

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   15 ( 47 )   20611 - 20617   2013

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    Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm(2) V-1 s(-1), which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggesting negligible contact resistance at 300 K. FET characteristics were investigated using two-probe and four-probe measurement modes at 50-300 K. The two-probe mobility of the saturation regime can be explained by the multiple shallow trap and release model, while the intrinsic mobility obtained by the four-probe measurement in the linear regime is better explained by the phenomenon of transport with charge carrier scattering at low temperatures. The FET device fabricated with a parylene gate dielectric on polyethylene terephthalate possesses both transparency and flexibility, implying feasibility of practical application of [6] phenacene FETs in flexible/transparent electronics. N-channel FET characteristics were also achieved in the [6] phenacene thin-film FETs using metals that possess a small work function for use as source/drain electrodes.

    DOI: 10.1039/c3cp53598c

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  • Electric-double-layer transistors with thin crystals of FeSe1-xTex (x = 0.9 and 1.0) Reviewed

    R. Eguchi, M. Senda, E. Uesugi, H. Goto, T. Kambe, T. Noji, Y. Koike, A. Fujiwara, Y. Kubozono

    Appl. Phys. Lett.   102   103506-1 - 103506-4   2013

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    DOI: 10.1063/1.4795626

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  • Synthesis and physical properties of metal-doped picene solids Reviewed

    Takashi Kambe, Xuexia He, Yosuke Takahashi, Yusuke Yamanari, Kazuya Teranishi, Hiroki Mitamura, Seiji Shibasaki, Keitaro Tomita, Ritsuko Eguchi, Hidenori Goto, Yasuhiro Takabayashi, Takashi Kato, Akihiko Fujiwara, Toshikaze Kariyado, Hideo Aoki, Yoshihiro Kubozono

    PHYSICAL REVIEW B   86 ( 21 )   2012.12

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    We report electronic-structure and physical properties of metal-doped picene as well as selective synthesis of the phase that exhibits 18-K superconducting transition. First, Raman scattering is used to characterize the number of electrons transferred from the dopants to picene molecules, where a softening of Raman scattering peaks enables us to determine the number of transferred electrons. From this, we have identified that three electrons are transferred to each picene molecule in the superconducting doped picene solids. Second, we report pressure dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase shows a negative pressure dependence, while the 18-K phase exhibits a positive pressure dependence which can not be understood with a simple phonon mechanism of BCS superconductivity. Third, we report a synthesis method for superconducting K(3)picene by a solution process with monomethylamine CH3NH2. This method enables us to prepare selectively the K(3)picene sample exhibiting 18-K superconducting transition. The method for preparing K(3)picene with T-c = 18 K found here may facilitate clarification of the mechanism of superconductivity.

    DOI: 10.1103/PhysRevB.86.214507

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  • Characteristics of [6]phenacene thin film field-effect transistor Reviewed

    Noriko Komura, Hidenori Goto, Xuexia He, Hiroki Mitamura, Ritsuko Eguchi, Yumiko Kaji, Hideki Okamoto, Yasuyuki Sugawara, Shin Gohda, Kaori Sato, Yoshihiro Kubozono

    APPLIED PHYSICS LETTERS   101 ( 8 )   2012.8

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    Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility mu as high as 3.7 cm(2) V-1 s(-1). The similar O-2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O-2 sensing in [6]phenacene FET. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747201]

    DOI: 10.1063/1.4747201

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  • O-2-exposure and light-irradiation properties of picene thin film field-effect transistor: A new way toward O-2 gas sensor Reviewed

    Yasuyuki Sugawara, Keiko Ogawa, Hidenori Goto, Shuhei Oikawa, Kouki Akaike, Noriko Komura, Ritsuko Eguchi, Yumiko Kaji, Shin Gohda, Yoshihiro Kubozono

    SENSORS AND ACTUATORS B-CHEMICAL   171   544 - 549   2012.8

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    Transistor characteristics and O-2 gas sensing properties are investigated for picene thin film field-effect transistors (FETs) with ZrO2, Ta2O5, HfO2 and BaxSr1-xTiO3 (x = 0.4). The low-voltage operation is achieved using the above oxides with high gate dielectric constant, contrary to SiO2 gate dielectric. The O-2 gas sensing is achieved at 11 s intervals without any bias stress by an application of pulse drain and gate voltages (V-D and V-G), in contrast to previous result in which the O-2 gas sensing was performed at least at 1 h step because of bias stress effect. The actual O-2 sensing-speed in the picene thin film FET was similar to 10 s for 3.8 Torr O-2, and the O-2 sensing limit was concluded to be 0.15-0.38 Torr. Furthermore, it has been found that the O-2 sensing properties are observed only under irradiation of light with wavelength below 400 nm. From the result, we have presented two scenarios for O-2 sensing mechanism in picene thin film FET. (C) 2012 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.snb.2012.05.030

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  • Characteristics of Single Crystal Field-Effect Transistors with a New Type of Aromatic Hydrocarbon, Picene Reviewed

    Nobuyuki Kawai, Ritsuko Eguchi, Hidenori Goto, Kouki Akaike, Yumiko Kaji, Takashi Kambe, Akihiko Fujiwara, Yoshihiro Kubozono

    JOURNAL OF PHYSICAL CHEMISTRY C   116 ( 14 )   7983 - 7988   2012.4

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    Picene is a phenacene-type aromatic hydrocarbon molecule with five benzene rings. We have fabricated picene single crystal (SC) field-effect transistors (FETs) with solid gate and ionic liquid gate dielectrics. Although the picene SC FET showed a large hole-injection barrier without any modification of interface between source/drain electrodes and picene SC, such a large hole-injection barrier could be effectively reduced by modifying the interface with tetracyanoquinodimethane (TCNQ). Picene SC FET with an HfO2 gate dielectric and TCNQ:coated electrodes shows p-channel characteristics with a smooth hole injection and a field-effect mobility more than 1 cm(2) V-1 s(-1) in two-terminal measurement. Picene SC FET could be operated even in bottom-contact structure by modifying the interface with octanethiol. Furthermore, picene SC FET operated with ionic liquid gate dielectric, [1-butyl-3-methylimidazolium][hexafluorophosphate], showing the field-effect mobility of 1.8 X 10(-1) cm(2) V-1 s(-1) and low absolute value, 1.9 V, of threshold voltage.

    DOI: 10.1021/jp300052p

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  • Characteristics of conjugated hydrocarbon based thin film transistor with ionic liquid gate dielectric Reviewed

    Yumiko Kaji, Keiko Ogawa, Ritsuko Eguchi, Hidenori Goto, Yasuyuki Sugawara, Takashi Kambe, Koki Akaike, Shin Gohda, Akihiko Fujiwara, Yoshihiro Kubozono

    ORGANIC ELECTRONICS   12 ( 12 )   2076 - 2083   2011.12

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    Thin film transistors (TFTs) with ionic liquid gate dielectrics, [1-ethyl-3-methylimidazolium][bis(trifluoromethanesulfonyl) imide] (emim[TFSI]) and [1-butyl-3-methylimidazolium][hexafluorophosphate] (bmim[PF6]), are fabricated with thin films of one dimensional (1D) hydrocarbon, [7]phenacene. P-channel characteristics are observed for [7] phenacene TFTs with both ionic liquids by use of platinum electrode. The field-effect mobility mu for [7]phenacene TFT with bmim[PF6] was recorded to be 0.28 cm(2) V-1 s(-1). The value of absolute threshold voltage, vertical bar V-TH vertical bar, was less than 2.5 V, showing low-voltage operation. The accumulation of hole in the [7]phenacene TFTs with ionic liquids was confirmed from the voltage or time dependence of capacitance in metal-insulator-semiconductor structure, which shows that these TFTs operate electrochemically and the carriers are accumulated in the whole of [7]phenacene thin films. (C) 2011 Elsevier B. V. All rights reserved.

    DOI: 10.1016/j.orgel.2011.08.016

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  • Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars Reviewed

    Hikari Tomori, Akinobu Kanda, Hidenori Goto, Youiti Ootuka, Kazuhito Tsukagoshi, Satoshi Moriyama, Eiichiro Watanabe, Daiju Tsuya

    APPLIED PHYSICS EXPRESS   4 ( 7 )   2011.7

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    A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.4.075102

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  • Fabrication of ultrashort graphene Josephson junctions Reviewed

    Tomori H, Kanda A, Goto H, Takana S, Ootuka Y, Tsukagoshi K

    Physica C: Superconductivity   470 ( 20 )   1492 - 1495   2010

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    Graphene is a single layer of graphite. Graphene is expected to exhibit the relativistic Josephson effects, when ballistic transport is realized in it. Here, we report a method to fabricate ultrashort graphene Josephson junctions with length as short as several tens of nm, which is much shorter than the estimated mean free path of the graphene film after the junction fabrication processes. (C) 2010 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physc.2010.05.146

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  • Effect of current annealing on electronic properties of multilayer graphene Reviewed

    Tanaka S, Goto H, Tomori H, Ootuka Y, Tsukagoshi K, Kanda A

    Journal of Physics: Conference Series   232 ( 1 )   012015   2010

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    While ideal graphene has high mobility due to the relativistic nature of carriers, it is known that the carrier transport in actual graphene samples is dominated by the influence of scattering from charged impurities, which almost conceals the intrinsic splendid properties of this novel material. The common techniques to improve the graphene mobility include the annealing in hydrogen atmosphere and the local annealing by imposing a large biasing current. Although annealing is quite important technique for the experimental study of graphene, detailed evaluation of the annealing effect is lacking at present. In this paper, we study the effect of the current annealing in multilayer graphene devices quantitatively by investigating the change in the mobility and the carrier density at the charge neutrality point. We find that the current annealing sometimes causes degradation of the transport properties.

    DOI: 10.1088/1742-6596/232/1/012015

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  • Dependence of proximity-induced supercurrent on junction length in multilayer-graphene Josephson junctions Reviewed

    Kanda A, Sato T, Goto H, Tomori H, Takana S, Ootuka Y, Tsukagoshi K

    Physica C: Superconductivity   470 ( 20 )   1477 - 1480   2010

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    We report experimental observation of the proximity-induced supercurrent in superconductor-multilayer graphene-superconductor junctions. We find that the supercurrent is a linearly decreasing function of the junction length (separation of the superconducting electrodes), which is quite different from the usual behavior of exponential dependence. We suggest that this behavior originates from the intrinsic large contact resistance between the multilayer and the superconducting electrodes. (C) 2010 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physc.2010.05.142

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  • Inverse spin valve effect in multilayer graphene device Reviewed

    Goto H, Tanaka S, Tomori H, Ootuka Y, Tsukagoshi K, Kanda A

    Journal of Physics: Conference Series   232 ( 1 )   012002   2010

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    We report the gate-voltage dependence of the spin transport in multilayer graphene (MLG) studied experimentally by the local measurement. The sample consists of a Ni/MLG/Ni junction, where the thickness of the MLG is 9 nm and the spacing of two Ni electrodes is 300 nm. At zero gate voltage, we observed the normal spin valve effect, in which the resistance for the antiparallel alignment of magnetization in ferromagnetic electrodes is larger than that for the parallel alignment. By applying a large gate voltage, on the other hand, the spill valve effect is reversed: the resistance for the antiparallel alignment becomes smaller than that for the parallel alignment. The result is qualitatively interpreted as a quantum interference effect, indicating that the mean free path and the spin relaxation length of the MLG are longer than the electrode spacing (300 nm).

    DOI: 10.1088/1742-6596/232/1/012002

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  • Inter-layer screening length to electric field in thin graphite film Reviewed

    Hisao Miyazaki, Shunsuke Odaka, Takashi Sato, Sho Tanaka, Hidenori Goto, Akinobu Kanda, Kazuhito Tsukagoshi, Youiti Ootuka, Yoshinobu Aoyagi

    APPLIED PHYSICS EXPRESS   1 ( 3 )   2008.3

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    Electric conduction in thin graphite film was tuned by two gate electrodes to clarify how the gate electric field induces electric carriers in thin graphite. The graphite was sandwiched between two gate electrodes arranged in a top and bottom gate configuration. A scan of the top gate voltage generates a resistance peak in ambiploar response. The ambipolar peak is shifted by the bottom gate voltage, where the shift rate depends on the graphite thickness. The thickness-dependent peak shift was clarified in terms of the inter-layer screening length to the electric field in the double-gated graphite film. The screening length of 1.2 nm was experimentally obtained. (C) 2008 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.1.034007

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  • Coulomb blockade oscillations in narrow corrugated graphite ribbons Reviewed

    Hisao Miyazaki, Shunsuke Odaka, Takashi Sato, Sho Tanaka, Hidenori Goto, Akinobu Kanda, Kazuhito Tsukagoshi, Youiti Ootuka, Yoshinobu Aoyagi

    APPLIED PHYSICS EXPRESS   1 ( 2 )   2008.2

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    We report Coulomb blockade oscillations in an atomically thin graphite ribbon fabricated by the micromechanical cleavage technique. Aperiodic current oscillations as a function of the gate voltage indicate the formation of multiple Coulomb islands inside the thin graphite ribbon. We conclude that the Coulomb islands originate from puddles of electrons and holes caused by the inhomogeneous interface between the ribbon and the substrate. (C) 2008 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.1.024001

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  • A different type of reentrant behavior in superconductor/thin graphite film/superconductor Josephson junctions Reviewed

    Sato T, Kanda A, Moriki T, Goto H, Tanaka S, Ootuka Y, Miyazaki H, Odaka S, Tsukagoshi K, Aoyagi Y

    Physica C: Superconductivity and its applications   468 ( 7 )   797   2008

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    DOI: 10.1016/j.physc.2007.11.050

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  • Gate-controlled superconducting proximity effect in ultrathin graphite films Reviewed

    Sato T, Moriki T, Tanaka S, Kanda A, Goto H, Miyazaki H, Odaka S, Ootuka Y, Tsukagoshi K, Aoyagi Y

    Physica E: Low-dimensional Systems and Nanostructures   40 ( 5 )   1495   2008

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    Publisher:Elsevier  

    DOI: 10.1016/j.physe.2007.09.149

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  • Observation of gate-controlled superconducting proximity effect in microfabricated thin graphite films Reviewed

    Sato T, Kanda A, Tanaka S, Goto H, Ootuka Y, Miyazaki H, Odaka S, Tsukagoshi K, Aoyagi Y

    Journal of Physics: Conference Series   109 ( 1 )   012031   2008

  • Magnetic response of a mesoscopic superconducting disk surrounded by a normal metal Reviewed

    Hidenori Goto, Kazuhito Tsukagoshi, Kimitoshi Kono

    LOW TEMPERATURE PHYSICS, PTS A AND B   850   753 - +   2006

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    Magnetic response of a superconductor/normal-metal (S/N) concentric disk is studied by use of a ballistic Hall magnetometer, which enables us to investigate the mutual proximity effects in a single and a micrometer-sized sample. The core of the sample is a type-I superconductor whose diameter is comparable to the coherence length and the magnetic penetration depth. The core and the surround are prepared by an improved double-angle evaporation method to realize their metallic contacts. At T = 1.3 K, the pair breaking effect on the S has been predominant. We have observed the smaller diamagnetic susceptibility, the larger critical field, and the less stable vortex states in the S/N sample than in only S sample. These results are attributed to the suppression of the surface superconductivity, which effectively decreases the diameter of the superconductor.

    DOI: 10.1063/1.2354923

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Books

  • Physics and Chemistry of Carbon-Based Materials, Basics and Applications

    Kubozono, Yoshihiro( Role: Contributor ,  Chapter 2 Physics of Graphene: Basic to FET Application, Hidenori Goto)

    Springer, Singapore  2019.3  ( ISBN:9789811334160

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    Total pages:332   Responsible for pages:29-63   Language:English Book type:Scholarly book

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  • 3D Local Structure and Functionality Design of Materials

    Daimon, Hiroshi (EDT, Sasaki, Yuji C. (ED( Role: Contributor ,  Subchapter 8.1: MATERIALS FOR ORGANIC ELECTRONICS AND BIOELECTRONICSYoshihiro Kubozono , Hidenori Goto and Hiroko Yamada)

    World Scientific Pub Co Inc  2019.1  ( ISBN:9789813273665

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    Total pages:209   Responsible for pages:173-195   Language:English Book type:Scholarly book

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  • 大学生の一般化学

    久保園芳博, 山﨑 岳 共編著( Role: Contributor ,  第2章 化学の量子論的な理解のための基礎, 久保園芳博, 後藤秀徳, 江口律子)

    培風館  2016.3  ( ISBN:9784563046255

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    Total pages:205   Responsible for pages:9-34   Language:Japanese Book type:Textbook, survey, introduction

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  • Application of Organic Semiconductors toward Transistors

    Paolo Bettotti( Role: Joint author ,  Chapter 9. Application of Organic Semiconductors toward Transistors)

    CRC Press  2016.1 

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  • 試料作製技術 (丸善実験物理学講座)

    小間 篤( Role: Joint author ,  6-3節 金属微粒子)

    丸善  2000.8 

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MISC

  • Pressure dependence of superconductivity of topological insulator β-PdBi2 and metal doping

    鈴木藍, 田口倫也, LI Huan, WANG Yanan, 石井啓文, LIAO Yen-Fa, 後藤秀徳, 江口律子, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   76 ( 1 )   2021

  • Pressure dependence of superconductivity in alkali-Bi compounds

    HUAN Li, SUZUKI Ai, TAGUCHI Tomoya, GOTO Hidenori, EGUCHI Ritsuko, LIAO Yen-Fa, ISHII Hirofumi, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   76 ( 1 )   2021

  • Band engineering of bilayer graphene using electron-transfer and electric-field effects

    ZHI Lei, GOTO Hidenori, TAKAI Akihisa, EGUCHI Ritsuko, NISHIKAWA Takao, TOKITO Shizuo, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020

  • Preparation of superconducting KBi2 and RbBi2 by liquid NH3 technique and their physical properties

    LI Huan, TAGUCHI Tomoya, SUZUKI Ai, GOTO Hidenori, EGUCHI Ritsuko, LIAO Yen-Fa, ISHII Hirofumi, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   75 ( 2 )   2020

  • Electronic properties of monolayer graphene under an electric field

    ZHI Lei, GOTO Hidenori, MIURA Akari, EGUCHI Ritsuko, NISHIKAWA Takao, TOKITO Shizuo, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   75 ( 2 )   2020

  • 蛍光X線ホログラフィーによるグラファイト層間化合物超伝導体(Ca,K)C8の局所電子配列

    八方直久, 窪田昌史, 松下智裕, 細川伸也, 木村耕治, 林好一, YANG Xiaofan, 江口律子, 後藤秀徳, 久保園芳博

    日本放射光学会年会・放射光科学合同シンポジウム(Web)   33rd   2020

  • Structure and superconducting properties in multiple phases of (NH3)yMxFeSe (M: Ca, Sr and Ba) at ambient and high pressures

    LI Huan, WANG Yanan, YANG Xiaofan, TAGUCHI Tomoya, HE Tong, ZHI Lei, GOTO Hidenori, EGUCHI Ritsuko, ISHII Hirofumi, LIAO Yen-Fa, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020

  • Superconducting behavior of Ba1-xMxTi2(Sb1-yBiy)2O(M: alkali and lanthanide atoms)

    WANG Yanan, LI Huan, YANG Xiaofan, HE Tong, ZHI Lei, TAGUCHI Tomoya, EGUCHI Ritsuko, GOTO Hidenori, KUBOZONO Yoshihiro, LIAO Yen-Fa, ISHII Hirofumi

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020

  • Pressure dependence of structure and superconductivity in Ba1-xNaxTi2Sb2O

    田口倫也, WANG Yanan, YANG Xiaofan, LI Huan, HE Tong, 高林康裕, 林好一, 石井啓文, LIAO Yen-Fa, 江口律子, 後藤秀徳, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020

  • Pressure dependence of structure and superconductivity in Ba compounds

    田口倫也, WANG Yanan, LI Huan, 高林康裕, 林好一, 石井啓文, LIAO Yen-Fa, 江口律子, 後藤秀徳, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   75 ( 2 )   2020

  • Preparation of superconducting BaIr2 and SrIr2 and their superconducting behavior under pressure

    HUAN Li, YANG Xiaofan, WANG Yanan, HE Tong, TAGUCHI Tomoya, GOTO Hidenori, HORIE Rie, HORIGANE Kazumasa, AKIMITSU Jun, LIAO Yen-Fa, ISHII Hirofumi, YAMAOKAB Hitoshi, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   74 ( 2 )   2019

  • Pressure-driven superconductivity in metaldoped two-dimension layered materials

    YANG Xiaofan, HE Tong, TAGUCHI Tomoya, WANG Yanan, LI Huan, ISHII Hirofumi, LIAO Yen-Fa, YAMAOKA Hitoshi, GOTO Hidenori, EGUCHI Ritsuko, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   74 ( 1 )   2019

  • 分子吸着によるグラフェンの散乱効果

    高井彰久, 後藤秀徳, 内山貴生, ZHI Lei, 江口律子, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   74 ( 1 )   2019

  • Bi2-xSbxTe3-ySeyの蛍光X線ホログラフィー

    江口律子, HE Tong, YANG Xiaofan, LI Huan, 田口倫也, 後藤秀徳, 久保園芳博, 八方直久, 山口涼太, 細川伸也, 尾崎ひかる, 松本亮平, 木村耕治, 林好一

    KEK Progress Report (Web)   ( 2019-7 )   2019

  • 蛍光X線ホログラフィーによるグラファイトインターカレーション化合物(K,Ca)C8の局所原子配列

    八方直久, 窪田昌史, 松下智裕, 細川伸也, 木村耕治, 林好一, YANG Xiaofan, 江口律子, 後藤秀徳, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   74 ( 2 )   2019

  • 分子吸着によるグラフェンの散乱効果 II

    高井彰久, 後藤秀徳, ZHI Lei, 江口律子, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   74 ( 2 )   2019

  • Pressure-induced superconductivity of Bi2-xSbxTe3-ySey (x = 0, 0.25, 0.5, 1.0, y = 1.0 and x =1.0, y = 2.0)

    HE Tong, YANG Xiaofan, TAGUCHI Tomoya, GOTO Hidenori, EGUCHI Ritsuko, KOBAYASHI Kaya, AKIMITSU Jun, YAMAOKA Hitoshi, ISHII Hirofumi, LIAOB Yen-Fa, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   74 ( 2 )   2019

  • Pressure driven High-Tc superconductivity in metal doped FeSe1-zTez

    YANG Xiaofan, HE Tong, TAGUCHI Tomoya, YAMAOKA Hitoshi, ISHII Hirofumi, LIAO Yen-Fa, GOTO Hidenori, EGUCHI Ritsuko, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   74 ( 2 )   2019

  • Electronic properties of bilayer graphene under an enormous electric field

    ZHI Lei, GOTO Hidenori, TAKAI Akihisa, EGUCHI Ritsuko, NISHIKAWA Takao, TOKITO Shizuo, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   74 ( 2 )   2019

  • Preparation and transport properties of Ba1-xCsxTi2Sb2O

    WANG Yanan, TAGUCHI Tomoya, YANG Xiaofan, LI Huan, HE Tong, YAMAOKA Hitoshi, ISHII Hirofumi, LIAO Yen-Fa, GOTO Hidenori, EGUCHI Ritsuko, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   74 ( 2 )   2019

  • グラフェンの磁気散乱効果

    高井彰久, 後藤秀徳, 内山貴生, LEI Zhi, 江口律子, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   73 ( 2 )   2018

  • 微生物由来鞘状酸化鉄を利用した多孔質炭素材料および炭素-酸化鉄複合材料の作製 Reviewed

    西村維心, 後藤和馬, 日浦登和, 川村仁美, 橋本英樹, 松本修治, 高田 潤, 粕壁隆敏, 西原洋知, 後藤秀徳, 大久保貴広, 石田祐之

    炭素   280   188 - 197   2017.11

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    DOI: 10.7209/tanso.2017.188

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  • 自己組織化単分子膜と吸着分子を用いた2層グラフェンのバンドギャップ制御

    内山貴生, 後藤秀徳, 秋吉秀彦, 上杉英理, 江口律子, 長田洋, 西川尚男, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   72 ( 1 )   2017

  • Superconducting properties of (NH3)yNaxFeSe under high pressure

    Terao Takahiro, Zheng Lu, Miao Xiao, Uesugi Eri, Miyazaki Takahumi, Goto Hidenori, Eguchi Ritsuko, Kagayama Tomoko, Shimizu Katsuya, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   71   2174 - 2174   2016

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    DOI: 10.11316/jpsgaiyo.71.2.0_2174

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  • Electronic state of few-layer graphene on self-assembled monolayers controlled by molecular adsorption

    Goto Hidenori, Uchiyama Takaki, Akiyoshi Hidehiko, Uesugi Eri, Eguchi Ritsuko, Saito Gunzi, Yoshida Yukihiro, Osada Hiroshi, Nishikawa Takao, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   71   1691 - 1691   2016

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    DOI: 10.11316/jpsgaiyo.71.2.0_1691

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  • Field-effect transistor operation of T(Se1-xTex)2(T:transition metal)

    Uesugi Eri, Miao Xiao, Terao Takahiro, Ota Hiromi, Goto Hidenori, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   71   2198 - 2198   2016

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    DOI: 10.11316/jpsgaiyo.71.2.0_2198

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  • フェナセン系薄膜電界効果トランジスタの論理回路応用

    三上隆弘, 江口律子, 下侑馬, 浜尾志乃, 後藤秀徳, 岡本秀毅, 林靖彦, 久保園芳博

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   63rd   2016

  • 24aAC-3 Pressure-dependence of superconductivity in metal-doped graphite superconductors, Ca_xK_<1-x>C_y

    Huyen N., Izumi M., Zheng L., Sakai Y., Goto H., Kubozono Y., Sakata M., Kagayama T., Shimizu K.

    Meeting Abstracts of the Physical Society of Japan   70   1894 - 1894   2015

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    DOI: 10.11316/jpsgaiyo.70.1.0_1894

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  • 22pCJ-6 Local structure of organic electronics and novel superconductors

    Kubozono Yoshihiro, Goto Hidenori, Eguchi Ritsuko

    Meeting Abstracts of the Physical Society of Japan   70   2751 - 2752   2015

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    DOI: 10.11316/jpsgaiyo.70.1.0_2751

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  • 21aAC-7 Carrier scattering in graphene by adsorbed molecules

    Akiyoshi Hidehiko, Goto Hidenori, Uesugi Eri, Hamao Shino, Eguchi Ritsuko, Yoshida Yukihiro, Saito Gunzi, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   70   1246 - 1246   2015

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    DOI: 10.11316/jpsgaiyo.70.1.0_1246

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  • 22pBC-2 Control of physical properties of LaOBiS_2 by electrostatic carrier doping

    Uesugi Eri, Goto Hidenori, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   70   2236 - 2236   2015

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    DOI: 10.11316/jpsgaiyo.70.1.0_2236

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  • 22aBA-12 Fabrication of new superconductors by metal-doping of two-dimensional layered materials

    Zheng Lu, Sakai Yusuke, Izumi Masanari, Nishiyama Saki, Miao Xiao, Goto Hidenori, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   70   2066 - 2066   2015

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    DOI: 10.11316/jpsgaiyo.70.1.0_2066

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  • フェナセン系薄膜電界効果トランジスタのデバイス構造の改変による伝導特性制御と論理回路応用

    三上隆弘, 下侑馬, 浜尾志乃, 江口律子, 後藤秀徳, 岡本秀毅, 久保園芳博, 林靖彦

    応用物理・物理系学会中国四国支部合同学術講演会講演予稿集   2015   2015

  • 有機分子吸着によるグラフェンへのキャリア蓄積

    秋吉秀彦, 後藤秀徳, 上杉英里, 江口律子, 吉田幸大, 齋藤軍治, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 新しい有機ならびに炭素系超伝導体の合成と特性評価

    寺尾貴博, 西山佐希, NGUYEN Huyen L. T., ZHENG Lu, MIAO Xiao, 後藤秀徳, 江口律子, 加賀山朋子, 清水克也, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 金属ドープLaOBiS2超伝導体の合成と特性評価

    西山佐希, 上杉英里, HUYEN Nguyen Thi Le, 加賀山朋子, 清水克哉, 後藤秀徳, 江口律子, 北川俊作, 小林達生, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • フェナセン単結晶FETの特性と論理回路応用

    下侑馬, 三上隆弘, 浜尾志乃, 岡本秀毅, 郷田慎, 江口律子, 後藤秀徳, 林靖彦, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 多環フェナセン単結晶電界効果トランジスタの伝導特性と論理回路応用

    下侑馬, 三上隆弘, 浜尾志乃, 江口律子, 後藤秀徳, 岡本秀毅, 郷田慎, 佐藤かおり, 久保園芳博, 林靖彦

    応用物理・物理系学会中国四国支部合同学術講演会講演予稿集   2015   2015

  • フェナセン単結晶を用いた高性能電界効果トランジスタの作製及びその伝導特性

    下侑馬, 三上隆弘, 村上寛虎, 浜尾志乃, 江口律子, 後藤秀徳, 岡本秀毅, 郷田慎, 佐藤かおり, 林靖彦, 久保園芳博

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   76th   2015

  • フェナセン系薄膜電界効果トランジスタの伝導特性評価と論理回路応用

    三上隆弘, 下侑馬, 浜尾志乃, 江口律子, 後藤秀徳, 岡本秀毅, 林靖彦, 久保園芳博

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   76th   2015

  • 高性能フェナセン薄膜FETの開発と論理回路応用

    三上隆弘, 下侑馬, 浜尾志乃, 岡本秀毅, 郷田慎, 江口律子, 後藤秀徳, 林靖彦, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 二次元層状物質への電界効果キャリア注入と超伝導

    上杉英里, 後藤秀徳, 江口律子, 北川俊作, 小林達夫, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 7aAL-1 Resistivity behavior in 7 K superconductivity phase of K_xpicene under high pressure

    Nguyen Huyen, Izumi Masanari, Sakai Yusuke, Lu Zheng, Goto Hidenori, Kubozono Yoshihiro, Sakata Masafumi, Kagayama Tomoko, Shimizu Katsuya

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   593 - 593   2014.8

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  • 8aAH-1 Electronic properties of graphenes doped with electron acceptor/donor molecules II

    Akiyoshi Hidehiko, Goto Hidenori, Uesugi Eri, Hamao Shino, Eguchi Ritsuko, Kubozono Yoshihiro, Yoshida Yukihiro, Saito Gunzi

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   600 - 600   2014.8

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  • 7pBD-7 Metal doped M_xSe_<1-z>Te_z (M=Fe, Mo, Zn, W) Superconductors Prepared Using Liquid NH_3 Technique

    Sakai Yusuke, Lu Zheng, Uesugi Eri, Nishiyama Saki, Izumi Masanari, Goto Hidenori, Noji Takashi, Koike Yoji, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   335 - 335   2014.8

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  • 10aBH-12 Carrier doping to two- and three-dimensional Bi compounds

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Noji Takashi, Koike Yoji, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   455 - 455   2014.8

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  • 7pBD-8 Structure study on (NH_3)yM_xFeSe : a correlation between T_c and structure (chemical composition, metal amount and NH_3 amount)

    Zheng Lu, Sakai Yusuke, Izumi Masanari, Nishiyama Saki, Uesugi Eri, Goto Hidenori, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   336 - 336   2014.8

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  • 9pBJ-11 Electrical resistivity measurements of vacuum-evaporated K-doped picene films

    Hamada T., Jabuchi T., Okazaki H., Wakita T., Kambe T., Goto H., Kubozono H., Muraoka Y., Yokoya T.

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   444 - 444   2014.8

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  • Fabrication and characterization of picene-thin-film electric-double-layer transistors

    Shimo Yuma, Goto Hidenori, Kubozono Yoshihiro, Hayashi Yasuhiko

    IEICE technical report. Electron devices   114 ( 12 )   31 - 34   2014.4

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    Electric-double-layer (EDL) field-effect transistors are fabricated with thin films of picene, in order to reduce the operation voltage. We used two types of ionic liquids for the picene-thin-film EDL FET (EDLT). One is ionic liquid gel, which provides the absolute threshold voltage (|V_<th>|) as low as 1.87V, while the other is ionic liquid polymer sheet which provides the |V_<th>| as low as 0.87V. The small |V_<th>| values in these EDLTs are available for practical electronic devices, which may lead to the new development for integration of organic transistors

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  • Study on organic transistors with [6]phenacene

    MIKAMI Takahiro, GOTO Hidenori, KUBOZONO Yoshihiro, HAYASHI Yasuhiko

    IEICE technical report. Electron devices   114 ( 12 )   35 - 39   2014.4

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    The [6]phenacene molecule consists of six benzene rings and takes a W-shaped structure. It is well known that [6]phenacene field-effect transistor (FET) shows an excellent p-channel FET characteristics. However, the organic FET device has a serious problem that the absolute threshold voltage (|V_<th>|) is too high. Actually, the [6]phenacene thin film FET has such a serious problem. Here we tried to insert either electron acceptor or donor in the interface between [6]phenacene thin film and SiO_2 gate dielectric in order to decrease the |V_<th>|. In this study, we used diverse electron acceptors and donors, and the variation of |V_<th>| was systematically investigated, showing the V_<th>-shift of 30V in some electron acceptors. Furthermore, the drastic change of mobility (μ) in [6]phenacene FET was observed depending on the hydrophobic treatment of surface of SiO_2 gate dielectric, showing the μ value increased up to 5.0cm^2V^<-1>s^<-1> by the hydrophobic treatment with hexamethyldisilazane (HMDS).

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  • 27pCE-3 Superconductivity in ammoniated metal-intercalated two-dimensional layered materials

    Zheng Lu, Sakai Yusuke, Izumi Masanari, Eguchi Ritsuko, Goto Hidenori, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   561 - 561   2014.3

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  • 27aCG-10 Field-effect control of electronic properties in inorganic and organic layered-materials

    Uesugi E., Senda M., Teranishi K., Eguchi R., Goto H., Noji T, Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   548 - 548   2014.3

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  • 27pCL-5 Electronic properties of graphene doped by electron acceptor/donor molecules

    Akiyoshi Hidehiko, Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   835 - 835   2014.3

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  • 27pCE-2 Metal doped FeSe_<1-x>Te_x(x = 0.2, 0.5, 0.7) Superconductors Prepared Using Liquid NH_3 Technique

    Sakai Yusuke, Izumi Masanari, Lu Zheng, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   561 - 561   2014.3

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  • 27pCE-4 Pressure Dependence of (NH_3)_yFeSe_<1-x>Te_x Prepared Using Liquid NH3 Technique

    Izumi M., Fujiwara Akihiko, Kim Jungeun, Sun Liling, Kubozono Y., Sakai Y., Zheng Lu, Goto H., Eguchi R., Sakata M., Kobayashi T. C., Araki S., Onji T.

    Meeting Abstracts of the Physical Society of Japan   69 ( 0 )   561 - 561   2014

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    DOI: 10.11316/jpsgaiyo.69.1.3.0_561_4

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  • 7pBD-9 Emergence of High-T_c Superconducting Phase in (NH_3)_yCs_<0.4>FeSe under high pressure

    Izumi M, Araki S, Kobayashi T. C, Prassides Kosmas, Sun Liling, Kubozono Y, Sakata M, Sakai Y, Zheng Lu, Goto H, Nakamoto Y, Kagayama T, Shimizu K, Onji T

    Meeting Abstracts of the Physical Society of Japan   69 ( 0 )   336 - 336   2014

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  • 数層グラフェンにおけるパリティ効果

    後藤秀徳, 上杉英里, 久保園芳博

    New Diamond   114   10 - 14   2014

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  • 7aAL-2 Pressure-doping of potassium into picene and its superconductivity

    Kagayama T, NGUYEN Huyen, Fujii Y, Shimizu K, Sakata M, Goto H, Kubozono Y

    Meeting Abstracts of the Physical Society of Japan   69 ( 0 )   593 - 593   2014

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  • アンモニア溶媒を用いて金属ドーピングされたFeSe1-xTexの超伝導の圧力依存性

    和泉正成, 酒井優介, ZHENG Lu, 後藤秀徳, 江口律子, 坂田雅文, 小林達生, 荒木新吾, 恩地太紀, 藤原明比古, KIM Jungeun, SUN Liling, 久保園芳博

    日本物理学会講演概要集   69 ( 1 )   2014

  • Temperature dependence of conduction property in FeSe_<0.1>Te_<0.9> with field-effect carrier doping

    Senda M., Eguchi R., Goto H., Noji N., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   474 - 474   2013.8

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  • Electoric field control of electronic properties in few-layer graphene

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   614 - 614   2013.8

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  • Temperature dependence of conduction property in FeSe_<0.1>Te_<0.9> with field-effect carrier doping

    Senda M., Eguchi R., Goto H., Noji T., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   746 - 746   2013.8

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  • 26pDF-8 Characteristics of phenacene electric-double-layer field-effect transistors using various type ionic liquids

    He Xuexia, Eguchi Ritsuko, Hamao Shino, Goto Hidenori, Kambe Takashi, Yoshida Yukihiro, Saito Gunzi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   758 - 758   2013.8

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  • 28aEC-7 Superconductivity in ammoniated/metal doped FeSe systems

    Zheng Lu, Izumi Masanari, Sakai Yusuke, Eguchi Ritsuko, Goto Hidenori, Takabayashi Yasuhiro, Kambe Takashi, Onji Taiki, Araki Shingo, Kobayashi C.Tasuo, Kim Jungeun, Fujiwara Akihiko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   587 - 587   2013.8

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  • Metal doping into FeSe_<1-x>Te_x(x=0.2,0.5,0.7) crystals using liquid ammonia technique and their physical properties

    Sakai Y., Izumi M., Lu Zheng, Goto H., Eguchi R., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   587 - 587   2013.8

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  • 26pXF-4 Syntheses of aromatic superconductors using liquid ammonia

    Teranishi K., He X., Zheng L., Izumi M., Sakai Y., Takabayashi Y., Eguchi R., Goto H., Kambe T., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   907 - 907   2013.3

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  • 28pXP-5 Study on band structure of few-layer graphene by capacitance measurement

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Fujiwara Akihiko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   771 - 771   2013.3

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  • 26pXZE-8 Conductance control of FeSe_<1-x>Te_x single crystal devices

    Senda M., Eguchi R., Goto H., Kambe T., Noji T., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   594 - 594   2013.3

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  • 27pXP-7 N-channel characteristics and temperature dependence of transport properties in phenacene field-effect transistors

    He Xuexia, Hamao Shino, Eguchi Ritsuko, Goto Hidenori, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   942 - 942   2013.3

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  • 26pXZE-8 Conductance control of FeSe_<1-x>Te_x single crystal devices

    Senda M., Eguchi R., Goto H., Kambe T., Noji T., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   919 - 919   2013.3

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  • Pressure dependence of (NH_3)_yM_xFeSe_<1-x>Te_x(x=0.2,0.5,0.7) prepared using liquid NH_3 technique

    Izumi M., Sun Liling, Kubozono Y., Sakai Y., Lu Zheng, Goto H., Eguchi R., Sakata M., Kobayashi C.T., Araki S., Onji T.

    Meeting Abstracts of the Physical Society of Japan   68 ( 0 )   587 - 587   2013

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    DOI: 10.11316/jpsgaiyo.68.2.3.0_587_2

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  • アンモニア溶媒を用いて金属ドーピングされたFeSe1-xTex超伝導体の圧力依存性

    和泉正成, 酒井優介, LU Zheng, 後藤秀徳, 江口律子, 坂田雅文, 小林達生, 荒木新吾, 恩地太紀, SUN Liling, 久保園芳博

    日本物理学会講演概要集   68 ( 2 )   2013

  • 電界効果キャリアドーピングしたFeSe0.1Te0.9の伝導特性の高温依存性

    千田恵美, 江口律子, 後藤秀徳, 野地尚, 小池洋二, 久保園芳博

    日本物理学会講演概要集   68 ( 2 )   2013

  • 有機多環縮合炭化水素のエレクトロニクス応用と超伝導

    久保園芳博, 江口律子, 後藤秀徳, 神戸高志

    分子科学討論会講演プログラム&要旨(Web)   7th   2013

  • FeSe1-xTex単結晶デバイスの伝導特性制御

    千田恵美, 江口律子, 後藤秀徳, 神戸高志, 野地尚, 小池洋二, 久保園芳博

    日本物理学会講演概要集   68 ( 1 )   2013

  • 21pFE-7 Synthesis of aromatic hydrocarbon superconductors II

    Teranishi Kazuya, He Xuexia, Izumi Masanari, Sakai Yusuke, Eguchi Ritsuko, Goto Hidenori, Kambe Takashi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   603 - 603   2012.8

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  • 18aFH-5 Single crystal FETs using phenacene type aromatic hydrocarbon molecules

    He Xuexia, Teranishi Kazuya, Hamao Shino, Eguchi Ritsuko, Goto Hidenori, Kambe Takashi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   752 - 752   2012.8

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  • 21pGA-8 Surface electronic states and control of conduction characteristics in FeSe_<1-x>Te_x thin crystal

    Eguchi R., Senda M., Goto H., Kambe T., Fujiwara A., Noji T., Koike Y., Horiba K., Nagamura N., Oshima M., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   607 - 607   2012.8

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  • 21pGA-7 Appearance of superconductivity with suppression of the structural transition in ultra-thin FeSe_<1-x>Te_x(x=0.9, 0.95) single crystals

    Senda M., Eguchi R., Goto H., Kambe T., Noji T., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   607 - 607   2012.8

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  • 21pEC-7 Edge-dependent transport properties in graphene

    Goto Hidenori, Uesugi Eri, Eguchi Ritsuko, Fujiwara Akihiko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   808 - 808   2012.8

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  • 21pEC-6 Quantum capacitance of few-layer graphene

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Fujiwara Akihiko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   808 - 808   2012.8

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  • 24aSB-11 Transport properties in ionic liquid-gated few layer graphene FETe

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   721 - 721   2012.3

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  • 25pYF-11 Synthesis of aromatic hydrocarbon superconductors

    Mitamura Hiroki, He Xuexia, Takahashi Yousuke, Eguchi Ritsuko, Goto Hidenori, Kambe Takashi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   645 - 645   2012.3

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  • 25pYF-8 Transport Properties of Phenacene Field-Effect Transistors

    Kubozono Yoshihiro, Komura Noriko, Kaji Yumiko, Kawai Nobuaki, Hamao Shino, Eguchi Ritsuko, Akaike Kouki, Goto Hidenori, Sugawara Takayuki

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   644 - 644   2012.3

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  • 27aSB-5 Transport properties of graphene edges

    Goto Hidenori, Uesugi Eri, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   926 - 926   2012.3

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  • 25pYF-11 Synthesis of aromatic hydrocarbon superconductors

    Mitamura Hiroki, He Xuexia, Takahashi Yousuke, Eguchi Ritsuko, Goto Hidenori, Kambe Takashi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   906 - 906   2012.3

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  • 25pYF-8 Transport Properties of Phenacene Field-Effect Transistors

    Kubozono Yoshihiro, Komura Noriko, Kaji Yumiko, Kawai Nobuaki, Hamao Shino, Eguchi Ritsuko, Akaike Kouki, Goto Hidenori, Sugawara Takayuki

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   905 - 905   2012.3

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  • Difference between mobilities of top and bottom surfaces in multilayer graphene II

    Nukui,Y, Goto,H, Tomori,H, Toyota,Y, Ootuka,Y, Tsukagoshi,K, Kanda,A

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   721   2012.3

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  • Formation of graphene with one dimensional local strain and transport measurement

    Tomori,H, Goto,H, Toyota,Y, Nukui,Y, Karube,H, Nihei,S, Ootuka,Y, Tsukagoshi,K, Hayashi,M, Yoshioka,H, Kanda,A

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   885   2012.3

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  • フラーレンの配列・配向制御と電界効果デバイスならびにエネルギーデバイスへの応用

    久保園芳博, 後藤秀徳, 古村紀子

    セラミックス   47   346   2012

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  • FeSe1-xTex極薄単結晶デバイスの表面電子状態と伝導特性制御

    江口律子, 千田恵美, 後藤秀徳, 神戸高志, 藤原明比古, 野地尚, 小池洋二, 堀場弘司, 堀場弘司, 永村直佳, 永村直佳, 尾嶋正治, 尾嶋正治, 久保園芳博

    日本物理学会講演概要集   67 ( 2 )   2012

  • 22pTG-4 Characteristics of single crystal FETs with aromatic hydrocarbons and precise control of their physical properties

    Kawai N., Ogawa K., Kaji Y., Eguchi R., Akaike K., Goto H., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   66 ( 2 )   869 - 869   2011.8

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  • 24aTD-7 Synthesis and physical properties of alkali metal doped hydrocarbons

    He Xuexia, Mitamura Hiroki, Takahashi Yosuke, Teranishi Kazuya, Eguchi Ritsuko, Goto Hidenori, Kato Takashi, Kambe Takashi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   66 ( 2 )   888 - 888   2011.8

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  • 22aTG-5 Electrostatic and Electrochemical organic transistors with ionic liquids

    Kubozono Yoshihiro, Kaji Yumiko, Eguchi Ritsuko, Goto Hidenori, Fujiwara Akihiko

    Meeting abstracts of the Physical Society of Japan   66 ( 2 )   861 - 861   2011.8

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  • 21pTE-6 Formation and transport measurement of graphene with nonuniform strain

    Tomori,H, Goto,H, Toyota,Y, Ootuka,Y, Tsukagoshi,K, Moriyama,S, Watanabe,E, Tsuya,D, Kanda,A

    Meeting abstracts of the Physical Society of Japan   66 ( 2 )   846   2011.8

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  • 21pTE-4 Difference between mobilities of top and bottom surfaces in multilayer graphene

    Nukui,Y, Goto,H, tomori,H, Toyota,Y, Ootuka,Y, Tsukagoshi,K, Kanda,A

    Meeting abstracts of the Physical Society of Japan   66 ( 2 )   846   2011.8

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  • 28aTA-1 Transport properties of suspended graphene Josephson junctions

    Tomori,H, Tanaka,S, Toyota,Y, Goto,H, Ootuka,Y, Tsukagoshi,K, Kanda,A

    Meeting abstracts of the Physical Society of Japan   66 ( 1 )   886   2011.3

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  • 24pRA-4 Electrical field effect of ultrashort graphene junctions

    Tomori,H, Tanaka,S, Goto,H, Ootuka,Y, Tsukagoshi,K, Kanda,A

    Meeting abstracts of the Physical Society of Japan   65 ( 2 )   797   2010.8

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    DOI: 10.1016/j.physc.2010.05.146

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  • 21aGS-5 Superconducting proximity effect in few-layer graphene

    Kanda,A, Goto,H, Tomori,H, Tanaka,S, Ootuka,Y, Tsukagoshi,K, Hayashi,M, Yoshioka,H

    Meeting abstracts of the Physical Society of Japan   65 ( 1 )   872 - 872   2010.3

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  • 21aGS-6 Electrical field effect of ultrashort graphene junctions

    Tomori,H, Tanaka,S, Goto,H, Ootuka,Y, Tsukagoshi,K, Kanda,A

    Meeting abstracts of the Physical Society of Japan   65 ( 1 )   872 - 872   2010.3

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    DOI: 10.1016/j.physc.2010.05.146

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  • 21aGS-7 Transport properties of multilayer graphene under high electric field

    Goto,H, Tanaka,S, Tomori,H, Ootuka,Y, Tsukagoshi,K, Kanda,A

    Meeting abstracts of the Physical Society of Japan   65 ( 1 )   873 - 873   2010.3

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  • グラフェンの電気伝導の現状と可能性

    神田晶申, 田中翔, 後藤秀徳, 友利ひかり, 塚越一仁

    Journal of the Vacuum Society of Japan   53 ( 2 )   85 - 93   2010

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    &nbsp;&nbsp;Present understanding of electric transport in graphene, a crystalline layer of carbon, is reviewed. In the first part, emphasis is placed on the gap between the ideal and reality of electron transport, which is mostly caused by disorder (charged impurities) in the experimental samples. Disorder which affects the graphene transport originates mainly from charged impurities in the substrate, comtaminants on the graphene surface due to, e.g., resists and sticky tapes, and absorbed gas molecules. The amount of charged impurities and the methods to remove them are discussed. In the second part, the characteristic phenomena in multilayer graphene are explained for spins and Cooper-pair transport, which are relevant to the nonuniform distribution of the carrier density under nonzero gate voltages.<br>

    DOI: 10.3131/jvsj2.53.85

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  • 26pYE-10 Superconducting proximity effects on single-layer graphene

    Goto,H, Tomori,H, Tanaka,S, Ootuka,Y, Tsukagoshi,K, Kanda,A

    Meeting abstracts of the Physical Society of Japan   64 ( 2 )   765   2009.8

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  • 26pYE-7 Fabrication of ballistic graphene junctions and its transport measurement

    Tomori,H, Goto,H, Tanaka,S, Ootuka,Y, Tsukagoshi,K, Kanda,A

    Meeting abstracts of the Physical Society of Japan   64 ( 2 )   764   2009.8

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  • 26pYE-6 Electron transport properties of multilayer graphene II

    Tanaka,S, Goto,H, Tomori,H, Ootuka,Y, Tsukagoshi,K, Kanda,A

    Meeting abstracts of the Physical Society of Japan   64 ( 2 )   764   2009.8

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  • 26pYE-9 Anomalous behavior of proximity-induced superconducting transition in multilayer graphene under gate-electric field

    Kanda,A, Hayashi,M, Yoshioka,H, Goto,H, Tomori,H, Tanaka,S, Ootuka,Y, Tsukagoshi,K

    Meeting abstracts of the Physical Society of Japan   64 ( 2 )   765   2009.8

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  • 劈開法で得た単層・多層グラフェンの電子・スピン・クーパー対伝導

    神田晶申, 後藤秀徳, 塚越一仁

    応用物理学会応用電子物性分科会誌   15 ( 3 )   114 - 119   2009

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  • 多層グラフェンにおける超伝導近接効果(不均一超伝導超流動状態と量子物理,研究会報告)

    神田, 晶申, 佐藤, 崇, 森木, 拓也, 田中, 翔, 後藤, 秀徳, 大塚, 洋一, 宮崎, 久生, 小高, 隼介, 塚越, 一仁, 青柳, 克信

    Bussei Kenkyu   91 ( 3 )   240   2008.12

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  • 22pTA-4 Electric transport of a few-layer graphene under strong electric field

    Miyazaki,H, Odaka,S, Tanaka,S, Goto,H, Kanda,A, Tsukagoshi,K, Ootuka,Y

    Meeting abstracts of the Physical Society of Japan   63 ( 2 )   767   2008.8

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  • 24aWB-9 Transport properties of ultra-thin graphite film/ferromagnet junctions II

    Goto,H, Sato,T, Tanaka,S, Kanda,A, Ootuka,Y, Miyazaki,H, Odaka,S, Tsukagoshi,K, Aoyagi,Y

    Meeting abstracts of the Physical Society of Japan   63 ( 1 )   817   2008.2

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  • 24aWB-2 Superconducting proximity effect in thin graphite films II

    Kanda,A, Sato,T, Tanaka,S, Goto,H, Ootuka,Y, Miyazaki,H, Odaka,S, Tsukagoshi,K, Aoyagi,Y

    Meeting abstracts of the Physical Society of Japan   63 ( 1 )   816   2008.2

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  • 24aRA-7 Transport properties of ultra-thin graphite film/ferromagnet junctions

    Goto,H, Sato,T, Tanaka,S, Kanda,A, Ootuka,Y, Miyazaki,H, Odaka,S, Tsukagoshi,K, Aoyagi,Y

    Meeting abstracts of the Physical Society of Japan   62 ( 2 )   893   2007.8

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  • 24aRA-8 Proximity-induced superconductivity in ultra thin graphite films

    Sato,T, Goto,H, Tanaka,S, Kanda,A, Ootuka,Y, Miyazaki,H, Odaka,S, Tsukagoshi,K, Aoyagi,Y

    Meeting abstracts of the Physical Society of Japan   62 ( 2 )   893   2007.8

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  • 24aRA-9 Electric field effect on electron transport of ultra-thin graphite film by Al top gate

    Miyazaki,H, Odaka,S, Sato,T, Goto,H, Kanda,A, Tsukagoshi,K, Ootuka,Y, Aoyagi,Y

    Meeting abstracts of the Physical Society of Japan   62 ( 2 )   893   2007.8

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  • 25pPSA-20 Direct Observation of Vortex States by Multi-Probe Hall Bars

    Goto Hidenori, Kono Kimitoshi

    Meeting abstracts of the Physical Society of Japan   61 ( 2 )   559 - 559   2006.8

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  • 26pYT-7 Magnetic response of superconductor/normal-metal mesosopic discs

    Goto Hidenori, Tsukagoshi Kazuhito, Kono Kimitoshi

    Meeting abstracts of the Physical Society of Japan   60 ( 1 )   650 - 650   2005.3

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  • 13aYC-6 Magnetic response of superconductor / normal-metal mesoscopic discs

    Goto Hidenori, Tsukagoshi Kazuhito, Kono Kimitoshi

    Meeting abstracts of the Physical Society of Japan   59 ( 2 )   600 - 600   2004.8

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  • Spin Polarization Induced in Superconductors due to Ferromagnetic Proximity Effects

    Goto Hidenori

    Meeting abstracts of the Physical Society of Japan   58 ( 1 )   462 - 462   2003.3

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  • 24aXW-4 Spatial Dependence of Ferromagnetic States due to Superconducting Proximity Effects

    Goto Hidenori

    Meeting abstracts of the Physical Society of Japan   57 ( 1 )   722 - 722   2002.3

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  • Superconducting proximity effects in ferromagnetic films

    Goto Hidenori

    Meeting abstracts of the Physical Society of Japan   56 ( 1 )   417 - 417   2001.3

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  • Ferromagnetic Proximity Effects in Superconductors

    Goto Hidenori

    Meeting abstracts of the Physical Society of Japan   55 ( 1 )   359 - 359   2000.3

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  • 6p-K-9 Conduction Electron Spin Resonance of Al Fine Metallic Particles

    Goto H., Kobayashi S.

    Meeting abstracts of the Physical Society of Japan   52 ( 2 )   630 - 630   1997.9

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Presentations

  • Geometrical capacitance of electric double-layer affected by layer number of graphene

    Hidenori Goto, Lei Zhi, Ritsuko Eguchi, Yoshihiro Kubozono

    Recent progress in graphene & 2D materials research (RPGR2021)  2021.10.12 

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    Event date: 2021.10.11 - 2021.10.14

    Presentation type:Oral presentation (general)  

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  • Different geometrical capacitance of an electric double-layer on monolayer and bilayer graphene

    Hidenori Goto, Lei Zhi, Ritsuko Eguchi, Yoshihiro Kubozono

    Japan-Italy joint workshop, Device science of 2D organic and inorganic materials: from fundamentals to applications  2021.7.5 

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  • Effect of molecular adsorption on electronic properties in graphene International conference

    Hidenori Goto, Akihisa Takai, Hidehiko Akiyoshi, Ritsuko Eguchi, Yoshihiro Kubozono

    Carrier Doping in two-dimensional layered materials: toward novel physical properties and electronic device applications (CA2D)  2019.11.4 

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    Venue:Naples, Italy  

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  • Semiconductor-metal transition in doped topological insulators International conference

    Hidenori Goto, Takaki Uchiyama, Ritsuko Eguchi, Kaya Kobayashi, Jun Akimitsu, Yoshihiro Kubozono

    Recent progress in graphene & 2D materials research (RPGR2019)  2019.10.6 

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  • Effects of molecular adsorption on carrier scattering in graphene International conference

    Hidenori Goto, Akihisa Takai, Hidehiko Akiyoshi, Ritsuko Eguchi, Yoshihiro Kubozono

    Superstripes 2019  2019.6.23 

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    Venue:Ischia, Naples, Italy  

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  • Carrier doping of graphene with electric-field effect and doping effect International conference

    Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    2018 EMRS Fall meeting  2018.9.17 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Warsaw, Poland  

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  • Doping and gating methods to produce an electric field in bilayer graphene International conference

    Hidenori Goto, Takaki Uchiyama, Hidehiko Akiyoshi, Ritsuko Eguchi, Yoshihiro Kubozono

    Meeting on physics and chemistry of emerging superconductors and thermoelectric materials (PCST17)  2017.9.13 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapienza University of Rome, Italy  

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  • Electronic properties of molecular doped graphene International conference

    Hidenori Goto, Yoshihiro Kubozono

    International Symposium on JST ACT-C Project, Invention of π-Electronic Organic Molecules toward Electronic Energy Devices  2017.7.28 

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    Language:English   Presentation type:Poster presentation  

    Venue:Okayama University, Okayama, Japan  

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  • Doping effects on electronic properties of bilayer graphene Invited International conference

    Hidenori Goto, Takaki Uchiyama, Yoko Nakashima, Hidehiko Akiyoshi, Ritsuko Eguchi, Hiroshi Osada, Takao Nishikawa, Yoshihiro Kubozono

    SUPERSTRIPES 2017, Quantum in Complex Matter: Superconductivity, Magnetism & Ferroelectricity  2017.6.4 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Ischia, Naples, Italy  

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  • Electronic properties of graphene with molecular adsorption International conference

    Hidenori Goto

    The 3rd INRS and Okayama University - International Scientific Workshop  2016.9.30 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Okayama University, Okayama, Japan  

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  • Electron transfer between graphene and adsorbed molecules Invited International conference

    Hidenori Goto, Hidehiko Akiyoshi, Takaki Uchiyama, Ritsuko Eguchi, Yoshihiro Kubozono

    EMN 2D Materials Meeting  2016.5.19 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:San Sebastian, Spain  

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  • Electronic properties of few-layer graphene with ionic-liquid gates International conference

    Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yoshihiro Kubozono

    International Workshop on Interface Science for Novel Physical Properties and Electronics  2013.12.9 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Okayama University, Okayama, Japan  

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  • Temperature dependence of field-induced electrical transport property in FeSe1-xTex thin crystals International conference

    Ritsuko Eguchi, Megumi Senda, Hidenori Goto, Takashi Noji, Yoji Koike, Yoshihiro Kubozono

    ICTP LEMSUPER Conference on Mechanisms & Developments in Light-Element Based & Other Novel Superconductors  2013.9.23 

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    Language:English   Presentation type:Poster presentation  

    Venue:Miramare-Trieste, Italy  

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  • Electronic transport properties in graphene edges International conference

    Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yoshihiro Kubozono

    5th International Conference on Recent Progress in Graphene Researches  2013.9.9 

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    Language:English   Presentation type:Poster presentation  

    Venue:Tokyo Institute of Technology, Tokyo, Japan  

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  • Electric-double-layer capacitance in few-layer graphene International conference

    Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yoshihiro Kubozono

    17th International Symposium on Intercalation Compounds (ISIC17)  2013.5.12 

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    Language:English   Presentation type:Poster presentation  

    Venue:Sendai, Japan  

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  • Edge-dependent transport properties in graphene International conference

    Hidenori Goto

    The 6th International Workshop on Advanced Materials Science and Nanotechnology, IWAMSN 2012  2012.10.31 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ha Long City, Vietnam  

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  • Edge-dependent transport in graphene International conference

    Hidenori Goto

    MAMA-HYBRIDS: Multifunctional Hybrids and Organics  2012.10.22 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ischia, Naples, Italy  

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  • Transport Properties in Graphene Edge International conference

    Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yoshihiro Kubozono

    International Symposium on Physics and Chemistry of Novel Superconductors and Related Materials  2012.10.1 

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    Language:English   Presentation type:Poster presentation  

    Venue:Okayama University, Japan  

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  • Spin relaxation in graphene due to ferromagnetic contac International conference

    Hidenori Goto

    Spintronics in Graphene  2011.7.4 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:National University of Singapore, Singapore  

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Research Projects

  • 強電場下における2次元層状物質の新規物性の探索

    2017.04 - 2020.03

    基盤研究(C) 

    後藤 秀徳

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    Authorship:Principal investigator  Grant type:Competitive

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  • イオン液体微小ゲートを用いたグラフェンの新規伝導現象の解明

    2014.04 - 2017.03

    基盤研究(C) 

    後藤 秀徳

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    Authorship:Principal investigator  Grant type:Competitive

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Class subject in charge

  • Mathematics for Chemistry 3 (2021academic year) Third semester  - 金1,金2

  • Mathematics for Chemistry 4 (2021academic year) Fourth semester  - 金1,金2

  • Mathematics for Chemistry 2 (2021academic year) 3rd and 4th semester  - 金1,金2

  • Solid State Chemistry 3 (2021academic year) Third semester  - 木3,木4

  • Solid Material Science (2021academic year) Prophase  - その他

  • Chemical Experiments (2021academic year) Summer concentration  - その他

  • Inorganic Chemistry Ⅳ (2021academic year) Third semester  - 火3,火4,木3,木4

  • Physical Chemistry of Surfaces (2021academic year) Late  - 月1,月2

  • Seminar in Physical Chemistry of Surface and Interface (2021academic year) Year-round  - その他

  • Quantum Physical Chemistry (2021academic year) Prophase  - 月1,月2

  • Solid State Chemistry 3 (2020academic year) Third semester  - 木3,木4

  • Solid Material Science (2020academic year) Prophase  - その他

  • Chemical Experiments (2020academic year) Second semester  - 金5,金6,金7,金8

  • Basic Modern Chemistry A2 (2020academic year) Second semester  - 火1,火2

  • Inorganic Chemistry Ⅳ (2020academic year) Third semester  - 火3,火4,木3,木4

  • Physical Chemistry of Surfaces (2020academic year) Late  - 月1,月2

  • Seminar in Physical Chemistry of Surface and Interface (2020academic year) Prophase

  • Seminar in Physical Chemistry of Surface and Interface (2020academic year) Year-round  - その他

  • Quantum Physical Chemistry (2020academic year) Prophase  - 月1,月2

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