Updated on 2024/02/01

写真a

 
YAMASHITA Yoshifumi
 
Organization
Faculty of Environmental, Life, Natural Science and Technology Associate Professor
Position
Associate Professor
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Degree

  • Doctor of Engineering ( 1993.3   The University of Tokyo )

Research Interests

  • Applied Physics of Property and Crystallography

  • Lattice Defects

  • 応用物性・結晶工学

  • 格子欠陥

Research Areas

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

  • Nanotechnology/Materials / Applied physical properties

  • Nanotechnology/Materials / Crystal engineering

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

Research History

  • - 岡山大学自然科学研究科 准教授

    2008

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  • - Associate Professor,Graduate School of Natural Science and Technology,Okayama University

    2008

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Professional Memberships

Committee Memberships

  •   日本学術振興会「結晶加工と評価技術」第145委員会 委員(2012-2022)  

    2012 - 2022   

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Papers

  • Expansion of Shockley stacking fault observed by scanning electron microscope and partial dislocation motion in 4H-SiC Reviewed

    Yoshifumi Yamashita, Ryu Nakata, Takeshi Nishikawa, Masaki Hada, and Yasuhiko Hayashi

    Journal of Applied Physics   123 ( 16 )   161580-1 - 161580-5   2018.4

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  • Dislocation motion in Sb-doped SiGe on Si substrate Invited Reviewed

    Yoshifumi Yamashita, Takuya Matsunaga, Toru Funaki, Tatsuya Fushimi, and Yoichi Kamiura

    Physica Status Solidi A   209 ( 10 )   1921 - 1925   2012.10

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  • Highly Oriented Carbon Nanotube Supercapacitors Reviewed

    Kohei Komatsubara, Hiroo Suzuki, Hirotaka Inoue, Misaki Kishibuchi, Shona Takahashi, Tatsuki Marui, Shigeyuki Umezawa, Tomohiro Nakagawa, Kyohei Nasu, Mitsuaki Maetani, Yuichiro Tanaka, Miyato Yamada, Takeshi Nishikawa, Yoshifumi Yamashita, Masaki Hada, Yasuhiko Hayashi

    ACS Applied Nano Materials   5 ( 1 )   1521 - 1532   2022.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acsanm.1c04236

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  • A mechanistic investigation of moisture-induced degradation of methylammonium lead iodide Reviewed

    Masaki Hada, Md. Abdullah Al Asad, Masaaki Misawa, Yoichi Hasegawa, Ryota Nagaoka, Hiroo Suzuki, Ryuji Mishima, Hiromi Ota, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi, Kenji Tsuruta

    Applied Physics Letters   117 ( 25 )   253304 - 253304   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    DOI: 10.1063/5.0021338

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  • Phonon transport probed at carbon nanotube yarn/sheet boundaries by ultrafast structural dynamics Reviewed

    Masaki Hada, Kotaro Makino, Hirotaka Inoue, Taisuke Hasegawa, Hideki Masuda, Hiroo Suzuki, Keiichi Shirasu, Tomohiro Nakagawa, Toshio Seki, Jiro Matsuo, Takeshi Nishikawa, Yoshifumi Yamashita, Shin ya Koshihara, Vlad Stolojan, S. Ravi P. Silva, Jun ichi Fujita, Yasuhiko Hayashi, Satoshi Maeda, Muneaki Hase

    Carbon   170   165 - 173   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    © 2020 Elsevier Ltd Modern integrated devices and electrical circuits have often been designed with carbon nanostructures, such as carbon nanotubes (CNTs) and graphene due to their high thermal and electrical transport properties. These transport properties are strongly correlated to their acoustic phonon and carrier dynamics. Thus, understanding the phonon and carrier dynamics of carbon nanostructures in extremely small regions will lead to their further practical applications. Here, we demonstrate ultrafast time-resolved electron diffraction and ultrafast transient spectroscopy to characterize the phonon and carrier dynamics at the boundary of quasi-one-dimensional CNTs before and after Joule annealing. The results from ultrafast time-resolved electron diffraction show that the CNTs after Joule annealing reach the phonon equilibrium state extremely fast with a timescale of 10 ps, which indicates that thermal transport in CNTs improves following Joule annealing. The methodology described in this study connects conventional macroscopic thermo- and electrodynamics to those at the nanometer scale. Realistic timescale kinetic simulations were performed to further elaborate on the phenomena that occur in CNTs during Joule annealing. The insights obtained in this study are expected to pave the way to parameterize the unexplored thermal and electrical properties of carbon materials at the nanometer scale.

    DOI: 10.1016/j.carbon.2020.08.026

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  • Controlling Electronic States of Few-walled Carbon Nanotube Yarn via Joule-annealing and p-type Doping Towards Large Thermoelectric Power Factor Reviewed

    May Thu Zar Myint, Takeshi Nishikawa, Kazuki Omoto, Hirotaka Inoue, Yoshifumi Yamashita, Aung Ko Ko Kyaw, Yasuhiko Hayashi

    Scientific Reports   10 ( 1 )   7307-1 - 7307-9   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    Abstract

    Flexible, light-weight and robust thermoelectric (TE) materials have attracted much attention to convert waste heat from low-grade heat sources, such as human body, to electricity. Carbon nanotube (CNT) yarn is one of the potential TE materials owing to its narrow band-gap energy, high charge carrier mobility, and excellent mechanical property, which is conducive for flexible and wearable devices. Herein, we propose a way to improve the power factor of CNT yarns fabricated from few-walled carbon nanotubes (FWCNTs) by two-step method; Joule-annealing in the vacuum followed by doping with p-type dopants, 2,3,5,6-tetrafluo-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). Numerical calculations and experimental results explain that Joule-annealing and doping modulate the electronic states (Fermi energy level) of FWCNTs, resulting in extremely large thermoelectric power factor of 2250 µW m−1 K−2 at a measurement temperature of 423 K. Joule-annealing removes amorphous carbon on the surface of the CNT yarn, which facilitates doping in the subsequent step, and leads to higher Seebeck coefficient due to the transformation from (semi) metallic to semiconductor behavior. Doping also significantly increases the electrical conductivity due to the effective charge transfers between CNT yarn and F4TCNQ upon the removal of amorphous carbon after Joule-annealing.

    DOI: 10.1038/s41598-020-64435-0

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    Other Link: https://www.nature.com/articles/s41598-020-64435-0

  • Liquid-like dielectric response is an origin of long polaron lifetime exceeding 10 μs in lead bromide perovskites Reviewed

    Kiyoshi Miyata, Ryota Nagaoka, Masaki Hada, Takanori Tanaka, Ryuji Mishima, Taihei Kuroda, Sota Sueta, Takumi Iida, Yoshifumi Yamashita, Takeshi Nishikawa, Kenji Tsuruta, Yasuhiko Hayashi, Ken Onda, Toshihiko Kiwa, Takashi Teranishi

    The Journal of Chemical Physics   152 ( 8 )   084704-1 - 084704-8   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    DOI: 10.1063/1.5127993

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  • The critical role of the forest morphology for dry drawability of few-walled carbon nanotubes Reviewed

    Hirotaka Inoue, Masaki Hada, Tomohiro Nakagawa, Tatsuki Marui, Takeshi Nishikawa, Yoshifumi Yamashita, Yoku Inoue, Kazuhiko Takahashi, Yasuhiko Hayashi

    Carbon   158   662 - 671   2020.2

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    © 2019 Carbon nanotube (CNT) yarns comprise few-walled CNTs (FWCNTs), mainly consisting of double- and triple-walled CNTs, and have several properties which are beneficial for practical bulk-scale carbon devices. These features include high tensile strength, electrical conductivity, thermal conductivity, chemical stability, and environmental tolerance. However, the synthesis window for fabricating CNT yarns with FWCNTs by the dry-spinning method is quite narrow and optimal conditions have yet to be determined. In this study, we fabricated CNT forests mainly comprised of FWCNTs at various synthesis conditions (temperature and time). The drawability of the CNT forests was characterized depending on the synthesis conditions. Our results show that optimum values exist for continuously drawable CNT forests in terms of both their height (>130 μm) and bulk density (>90 mg/cm3) for satisfying enough entanglement force between the CNT bundles. The diameter and number of walls of the CNTs are controlled by the temperature during the formation of catalyst particles because the sizes of catalyst particles are approximately equal to the outer diameter of CNTs. All temperature conditions in the range 350–500 °C, used to form catalyst particles, resulted in a drawable FWCNT forest. These insights will be useful for developing devices based on FWCNT yarns.

    DOI: 10.1016/j.carbon.2019.11.038

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  • One-Minute Joule Annealing Enhances the Thermoelectric Properties of Carbon Nanotube Yarns via the Formation of Graphene at the Interface Reviewed

    Hada, Masaki, Hada, Masaki, Hasegawa, Taisuke, Hasegawa, Taisuke, Inoue, Hirotaka, Inoue, Hirotaka, Takagi, Makito, Takagi, Makito, Omoto, Kazuki, Omoto, Kazuki, Chujo, Daiki, Chujo, Daiki, Iemoto, Shogo, Iemoto, Shogo, Kuroda, Taihei, Kuroda, Taihei, Morimoto, Taiga, Morimoto, Taiga, Hayashi, Takuma, Hayashi, Takuma, Iijima, Toru, Iijima, Toru, Tokunaga, Tomoharu, Tokunaga, Tomoharu, Ikeda, Naoshi, Ikeda, Naoshi, Fujimori, Kazuhiro, Fujimori, Kazuhiro, Itoh, Chihiro, Itoh, Chihiro, Nishikawa, Takeshi, Nishikawa, Takeshi, Yamashita, Yoshifumi, Yamashita, Yoshifumi, Kiwa, Toshihiko, Kiwa, Toshihiko, Koshihara, Shin-ya, Koshihara, Shin-ya, Maeda, Satoshi, Maeda, Satoshi, Hayashi, Yasuhiko, Hayashi, Yasuhiko

    ACS Applied Energy Materials   2 ( 10 )   7700 - 7708   2019

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/ACSAEM.9B01736

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  • Reverse-bias effects of metal-related levels in mc-Si for solar cells studied by isothermal DLTS

    Kiichiro Tagawa, Yuta Miyabe, Keishi Yasuda, Yoshifumi Yamashita, Takeshi Nishikawa, Masaki Hada, Yasuhiko Hayashi

    Proceedings of The Forum on the Science and Technology of Silicon Materials 2018   300 - 306   2018.11

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  • Effects of remote hydrogen-plasma treatment on electrical properties of beta-Ga2O3

    Nobuchika Nagai, Toshiki Tanaka, Yoshifumi Yamashita, Masaki Hada, Takeshi Nishikawa, Yasuhiko Hayashi

    Proceedings of The Forum on the Science and Technology of Silicon Materials 2018   387 - 391   2018.11

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  • Bond Dissociation Triggering Molecular Disorder in Amorphous H2O Reviewed

    M. Hada, Y. Shigeeda, S. Koshihara, T. Nishikawa, Y. Yamashita, Y. Hayashi

    Journal of Physical Chemistry A   122   9579 - 9584   2018.11

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    DOI: 10.1021/acs.jpca.8b08455

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  • High-performance structure of a coil-shaped soft-actuator consisting of polymer threads and carbon nanotube yarns Reviewed

    Hirotaka Inoue, Takayuki Yoshiyama, Masaki Hada, Daiki Chujo, Yoshitaka Saito, Takeshi Nishikawa,Yoshifumi Yamashita, Wataru Takarada, Hidetoshi Matsumoto, and Yasuhiko Hayashi

    AIP Advances   8 ( 7 )   075316-1 - 075316-7   2018.7

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  • High-performance structure of a coil-shaped soft-actuator consisting of polymer threads and carbon nanotube yarns Reviewed

    Hirotaka Inoue, Takayuki Yoshiyama, Masaki Hada, Daiki Chujo, Yoshitaka Saito, Takeshi Nishikawa, Yoshifumi Yamashita, Wataru Takarada, Hidetoshi Matsumoto, Yasuhiko Hayashi

    AIP ADVANCES   8 ( 7 )   2018.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER INST PHYSICS  

    We fabricated thermally driven metal-free soft-actuators consisting of poly(ethylene terephthalate) (PET) threads as the actuator and carbon nanotube (CNT) yarns as the heating source. The mechanical force, displacement, and response behavior of various structures of the coil-shaped soft-actuators were characterized. The actuation performance of the soft-actuators containing a homogeneous arrangement of PET threads and CNT yarns in their cross-sectional profile was the highest. The results of the calculations based on the heat diffusion equations indicated that inhomogeneous heat generation in the soft-actuator causes parts of the actuator to remain unheated and this interferes with the mechanical motions. Homogeneous thermal distribution in the soft-actuators, namely, the use of a multifilament structure, yields the highest performance in terms of the mechanical force and displacement. (C) 2018 Author(s).

    DOI: 10.1063/1.5033487

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  • Expansion of Shockley stacking fault observed by scanning electron microscope and partial dislocation motion in 4H-SiC Reviewed

    Yoshifumi Yamashita, Ryu Nakata, Takeshi Nishikawa, Masaki Hada, Yasuhiko Hayashi

    Journal of Applied Physics   123 ( 16 )   161580-1 - 161580-5   2018.4

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    We studied the dynamics of the expansion of a Shockley-type stacking fault (SSF) with 30° Si(g) partial dislocations (PDs) using a scanning electron microscope. We observed SSFs as dark lines (DLs), which formed the contrast at the intersection between the surface and the SSF on the (0001) face inclined by 8° from the surface. We performed experiments at different electron-beam scanning speeds, observing magnifications, and irradiation areas. The results indicated that the elongation of a DL during one-frame scanning depended on the time for which the electron beam irradiated the PD segment in the frame of view. From these results, we derived a formula to express the velocity of the PD using the elongation rate of the corresponding DL during one-frame scanning. We also obtained the result that the elongation velocity of the DL was not influenced by changing the direction in which the electron beam irradiates the PD. From this result, we deduced that the geometrical kink motion of the PD was enhanced by diffusing carriers that were generated by the electron-beam irradiation.

    DOI: 10.1063/1.5010861

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  • In-situ X-ray diffraction reveals the degradation of crystalline CH3NH3PbI4 by water-molecule collisions at room temperature Reviewed International coauthorship

    Masaki Hada, Yoichi Hasegawa, Ryota Nagaoka, Tomoya Miyake, U. Abdullaev, Hiromi Ota, Takeshi Nishikawa, Yoshifumi Yamashita, and Yasuhiko Hayashi

    Japanese Journal of Applied Physics   57 ( 2 )   028001-1 - 028001-3   2018.2

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  • In-situ X-ray diffraction reveals the degradation of crystalline CH3NH3PbI3 by water-molecule collisions at room temperature Reviewed

    Masaki Hada, Yoichi Hasegawa, Ryota Nagaoka, Tomoya Miyake, U. Abdullaev, Hiromi Ota, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi

    Japanese Journal of Applied Physics   2018

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  • Self-Assembled C-60 Fullerene Cylindrical Nanotubes by LLIP method Reviewed

    Venkata Krishna R. Rao, P. S. Karthik, Venkata K. Abhinav, Zaw Lin, May Thu Zar Myint, Takeshi Nishikawa, Masaki Hada, Yoshifumi Yamashita, Yasuhiko Hayashi, Surya Prakash Singh

    2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)   303 - 306   2016

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:IEEE  

    In this article, we report C60 Fullerene Nano Cylindrical Tubes (FNCT). The FNCTs were synthesized by a liquid-liquid interface precipitation (LLIP) method using m-Xylene as a saturating solvent and TBA (Tetra butyl alcoholic) as precipitation agent leading to the formation of FNCTs with uniquely structured and well oriented size and shape. The experiment was conducted in a closed atmosphere maintaining a low temperature. The main advantage of these structures is that they are stable up to 5 months in normal room temperature. Characterizations were done to the FNCTs and concluded to have applications in the field of electronics. Enhanced semiconducting properties have been observed in the nanostructures which can be used in the application of solar cells, FET transistors, etc.

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  • Sb-doping effect on the dislocation motion in various Si1-xGex films

    Shinya Maki, Yoshifumi Yamashita, Tatsuya Fushimi, Yutaka Ohno, Ichiro Yonenaga, Takeshi Nishikawa, Yasuhiko Hayashi

    Proceedings of The Forum on the Science and Technology of Silicon Materials 2014   75 - 80   2014.11

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  • Electric-field effects on the stability of impurity levels on a grain boundary in mc-Si for solar cells

    Masakazu Yabuki, Yoshifumi Yamashita, Tatsuro Tokura, Takeshi Nishikawa, Yasuhiko Hayashi

    Proceedings of The Forum on the Science and Technology of Silicon Materials 2014   209 - 213   2014.11

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  • Effects of Sb-doping on Strain Relaxation of SiGe Film on Si Substrate Reviewed

    Yoshifumi Yamashita, Kan Tanemoto, Akihiro Tanaka, and Tatsuya Fushimi

    AIP Conference Proceedings   1583   119 - 122   2014.2

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  • Effects of Sb doping on Strain Relaxation in SiGe Film on Si Substrate Reviewed

    Yoshifumi Yamashita, Kan Tanemoto, Akihiro Tanaka, Tatsuya Fushimi

    INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013   1583   119 - 122   2014

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:AMER INST PHYSICS  

    We studied the effects of antimony (Sb) doping on strain relaxation in a silicon germanium (SiGe) epitaxial film on a silicon substrate. Misfit strain relaxation proceeded faster in the Sb-doped SiGe than in the undoped film. However, the degree of enhancement did not correspond to the Sb concentration of the SiGe film below 700 degrees C. This was not expected from the effects of Sb on the threading dislocation velocity, which is larger in SiGe films with a higher Sb concentration. The results indicate that dislocation nucleation rather than the dislocation velocity had a substantial effect at low temperatures. On the other hand, relaxation was enhanced in the heavily Sb-doped film at 900 degrees C. We consider that this may be attributed to the enhancing effects of dislocation motion.

    DOI: 10.1063/1.4865617

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  • Electric-field effects on the stability of impurity levels on a grain boundary in mc-Si for solar cells(共著)

    Masakazu Yabuki, Yoshifumi Yamashita, Tatsuro Tokura, Takeshi Nishikawa, Yasuhiko Hayashi

    Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014   209 - 213   2014

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  • Sb-doping effect on the dislocation motion in various Si1-xGex films(共著)

    Shinya Maki, Yoshifumi Yamashita, Tatsuya Fushimi, Yutaka Ohno, Ichiro Yonenaga, Takeshi Nishikawa, Yasuhiko Hayashi

    Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014   75 - 80   2014

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  • DLTS Study of Pd-H Complexes in Si Reviewed

    Sunao Abe, Ryuichi Goura, Koichi Shimoe, Yoichi Kamiura, Yoshifumi Yamashita, and Takeshi Ishiyama

    Material Science Forum   725   213 - 216   2012.5

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  • DLTS Study of Pd-H Complexes in Si Reviewed

    Sunao Abe, Ryuichi Goura, Koichi Shimoe, Yoichi Kamiura, Yoshifumi Yamashita, Takeshi Ishiyama

    DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV   725   213 - 216   2012

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:TRANS TECH PUBLICATIONS LTD  

    We have observed five electron traps with energy levels at 0.16, 0.30, 0.40, 0.53 and 0.67 eV below the conduction band in Pd and H doped Si by DLTS technique. Successive annealing at 373 K and 473 K for 30 min respectively caused two levels at E-c-0.16 eV and E-c-0.67 eV to disappear and simultaneously a new level to emerge at E-c-0.19 eV. From such annealing behavior and the comparison of the energy levels observed in the present study with those in the literature, we assign them to various Pd and H related defects as follows, Pd-H-2: E-c-0.16 eV and E-c-0.67 eV, Pd acceptor: E-c-0.19 eV, Pd-H-3: E-c-0.30 eV, Pd-H-1: E-c-0.40 eV.

    DOI: 10.4028/www.scientific.net/MSF.725.213

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  • Palladium-Hydrogen Complex in Silicon Observed by Electron Spin Resonance Measurement Reviewed

    Takeshi Ishiyama, Shutaro Kimura, Yuya Mori, Yoichi Kamiura, Yoshifumi Yamashita

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 9 )   091301-+4pages   2011.9

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    We have investigated a palladium-hydrogen complex in silicon by electron spin resonance (ESR) measurement. A new ESR spectrum was detected in a sample diffused with palladium and hydrogen. The hyperfine structure of hydrogen atoms in the ESR spectrum shows that the spectrum originates from a palladium-hydrogen complex containing three hydrogen atoms (Pd-H(3)). The anisotropic g-value of Pd-H(3) shows that the Pd-H(3) complex has an anisotropic character of orthorhombic (C(2v)) symmetry. The calculated g-values of the Pd-H(3) complex are g(1) 2.12, g(2) = 2.10, and g(3) = 2.03, and the g(2) axis is along the (100) direction. The anisotropic character of orthorhombic (C(2v)) symmetry results from a configuration consisting of one Pd atom at a substitutional site, two equivalent hydrogen atoms at interstitial sites along the (111) direction, and one hydrogen atom at the next-nearest-neighbor interstitial site along the (100)-twofold symmetry axis. We have also studied the dissociation of a platinum-hydrogen complex by thermal treatment. The activation energy for the dissociation of the Pd-H(3) complex is estimated to be about 1.6eV. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.50.091301

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  • Electron Spin Resonance of Chromium-Platinum Pair in Silicon Reviewed

    Takeshi Ishiyama, Takahiro Tsurukawa, Yuya Mori, Yoichi Kamiura, Yoshifumi Yamashita

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   081302-+4pages   2011.8

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    We have investigated a chromium-platinum pair in silicon by electron spin resonance measurement. A new ESR spectrum originating from a chromium-platinum pair has been detected in both n- and p-type silicons diffused with chromium and platinum. The anisotropic g-tensor obtained by analyzing the angular dependence of the ESR spectrum shows a monoclinic (C(1h)) symmetry with g-values of g(1) = 4.67, g(2) = 2.99, and g(3) = 1.80. The g(1) axis is along the (110) direction. The g(2) and g(3) axes are perpendicular to the g(1) axis, and the g(2) axis is rotated from the (100) direction to the (111) direction at an angle of 20 degrees. The anisotropic character of monoclinic (C(1h)) symmetry results from the nearest-neighbor configuration consisting of a Pt atom at a substitutional site distorted by the displacement of Pt along the (100) direction and a Cr atom at the nearest-neighbor interstitial site. The ESR measurement under illumination suggests that a chromium-platinum pair forms a donor like electron trap level. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.50.081302

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  • Effects of uniaxial stress on local vibration of a platinum-hydrogen complex in silicon Reviewed

    Y. Kamiura, K. Higaki, K. Katayama, H. Mizukawa, T. Ishiyama, Y. Yamashita, S. Abe

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3   8 ( 3 )   2011

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:WILEY-V C H VERLAG GMBH  

    We have studied stress-induced splitting and shift of an infrared (IR) absorption line at 1880.7 cm(-1) of the Pt-H-1 complex in Si by Fourier-transform IR (FT-IR) spectroscopy at 10K combined with the application of uniaxial compressive stress up to 0.4 GPa. The line was split into two and three components under < 100 > and < 111 > stresses with intensity ratios of low- to high-wavenumber components being 1: 2 and 1: 1: 2, respectively. These results are consistent with C-1h symmetry in the piezospectroscopic theory of Kaplyanskii and the ESR results observed by Mchedlidze et al. Under < 110 > stress, however, the line was split only into two components, contradicting C-1h symmetry. Such inconsistency may be due to insufficient magnitude of stress. The split components were shifted linearly with increasing stress in the three directions. The isotope effects were observed for the Pt-H-1 complex. By replacing H with D, the IR line was shifted to 1358.5 cm(-1) and the < 100 > stress dependence of peak wavenumbers of two split components was weakened by a factor of 0.7. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssc.201000118

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  • Hydrogen plasma treatment for Si waveguide smoothing Reviewed

    Jingnan Cai, Yu Wang, Yasuhiko Ishikawa, Yoshifumi Yamashita, Yoichi Kamiura, Kazumi Wada

    IEEE International Conference on Group IV Photonics GFP   95 - 97   2011

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    We demonstrated that remote hydrogen plasma treatment on silicon ring resonators can smooth the Si waveguides at lower than 100°C. This also provides a promising way to trim resonators for a designed add/drop wavelength. © 2011 IEEE.

    DOI: 10.1109/GROUP4.2011.6053727

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  • Dislocation motion in B-doped SiGe epifilm on Si substrate (共著)

    Toru Funaki, Yoshifumi Yamashita, Takeshi Ishiyama, Yoichi Kamiura

    The Forum on the Science and Technology of Silicon Materials 2010 Proceedings   285 - 291   2010

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  • Bistable character of a deep level in polycrystalline Si substrate for solar cell Reviewed

    Y. Yamashita, M. Ochi, H. Yoshinaga, Y. Kamiura, T. Ishiyama

    PHYSICA B-CONDENSED MATTER   404 ( 23-24 )   5071 - 5074   2009.12

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:ELSEVIER SCIENCE BV  

    Electronic levels in polycrystalline Si (pc-Si) substrates for solar cells were studied by means of deep level transient spectroscopy (DLTS). A broad peak was observed at around 250 K when samples with grain boundaries (GBs) were thermally treated. The origin of this peak was investigated and we conclude that it is attributed to Cu contaminants gathered around GBs. We found interesting character of this peak. The peak intensity became small by annealing with reverse-biased voltage on the Schottky junction and it was recovered after keeping the sample at room temperature for several days. We explained this character as bistability of the center depending on its charge state. From the application viewpoint, we tried remote hydrogen-plasma treatment and could annihilate the peak. (C) 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physb.2009.08.227

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  • Electron spin resonance of palladium-related defect in silicon

    T. Ishiyama, S. Kimura, Y. Kamiura, Y. Yamashita

    PHYSICA B-CONDENSED MATTER   404 ( 23-24 )   4586 - 4589   2009.12

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    A different Pd-related defect from a substitutional Pd with (C(2v)) symmetry was detected by ESR measurement. New ESR signal of the Pd-related defect showed different g-value and symmetry from those of the substitutional Pd. The Pd-related defect has anisotropic character of monoclinic (C(1h)) symmetry. The calculated g-values are g(1) = 1.97, g(2) = 2.03, g(3) = 2.16, and the g(1) axis is along < 110 > direction. The g(2) and g(3) axes are perpendicular to the g(1) axis, and the g(2) axis is rotated from < 100 > to < 111 > direction at the angle of 51 degrees. In addition to the Pd-related defect, we have found other ESR signals in Pd and hydrogen-diffused Si. The ESR signals showed the hyperfine structure of hydrogen. Therefore, it is though that the ESR signals are originated from Pd H complex defect. (C) 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physb.2009.08.141

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  • Stress-induced splitting and shift of infrared absorption lines of platinum-hydrogen complexes in Si

    Kimhiro Sato, Yoichi Kamiura, Takeshi Ishiyama, Yoshifumi Yamashita

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 6 )   4392 - 4397   2008.6

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    We have studied the stress-induced splitting and shift of infrared (TR) absorption lines of platinum-hydrogen complexes in Si by Fourier-transform IR (FT-IR) spectroscopy at 10 K combined with the application of uniaxial stress. We observed several peaks at 1873.0, 1880.7, 1891.8, 1922.3, 1929.9, and 1943.0 cm(-1). These peaks may be due to the previously observed local vibrational modes (LVMs) of various platinum-hydrogen complexes, that is, the anti symmetric-stretching mode of (Pt-H(2))(0), the LVM of (Pt-H(1))(0), the symmetric-stretching mode of (Pt-H(2))(0), LVMs of (Pt-H(3))(-) and (Pt-H(3))(0), and the LVM of an unidentified platinum-hydrogen complex, respectively. The peaks of (Pt-H(1))(0) and (Pt-H2)0 split into two components under < 100 > compressive stress, while those of (Pt-H(3))(-) and (Pt-H(3))(0) did not split. We measured the stress dependence of the two split components of the (Pt-H(1))(0) peak. The low-wavenumber component shifted by -3.2cm(-1)/GPa, and the highwavenumber component shifted by 4.2 cm(-1)/GPa. We show that these wavenumber shifts are equal to the piezospectroscopic tensor elements, A, and A?, respectively. We propose a structural model of the Pt-H(1) complex, where a hydrogen atom is bonded to one of four Si neighbors of the Pt atom in the {110} mirror plane perpendicular to the < 110 > symmetric axis with C(1h) symmetry.

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  • Observation of photo- and electro-luminescence at 1.54 mu m of Er in strained Si and SiGe

    Y. Kamiura, T. Ishiyama, S. Yoneyama, Y. Fukui, K. Inoue, Y. Yamashita

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   146 ( 1-3 )   135 - 140   2008.1

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    We briefly review our recent results of the strain effects on photoluminescence (PL) properties of Er in tensile strained Si on a SiGe layer (Si:Er:O/SiGe) and compressively strained SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy, and present new results of electroluminescence (EL) properties of Er in homo- and hetero-epitaxially grown p-i-n diodes (p-Si/i-Si:Er:O/n-Si, p-SiGe/i-SiGe:Er:O/n-Si), where we grew an intrinsic Si or SiGe layer doped with Er and oxygen on an n-type Si substrate and subsequently grew a p-type Si or SiGe top layer. We observed Er-related PL around 1.54 mu m at 77 K in both tensile and compressively strained samples. The PL intensity of these strained samples was much stronger than that of unstrained (Si:Er:O/Si) samples. Moreover, we still observed intensive PL in strained samples even with low Er concentrations far below 10(18) cm(-3), at which unstrained samples showed only weak or no luminescence. Such enhancing effects strongly suggest that the probability of Er optical transition can be enhanced by the presence of both tensile and compressive strains. We also observed Er-related PL and EL around 1.54 mu m at 77 K in the p-i-n diodes, and found that annealing at 800 degrees C increased both of PL and EL intensities. (c) 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.mseb.2007.07.024

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  • Photo- and electroluminescence of Er in Si and SiGe layers

    T. Ishiyama, K. Inoue, S. Nakanishi, Y. Yamashita, Y. Kamiura

    Proc. of The 5th International Symposium on Advanced Science and Technology of Silicon Materials   L-16(5pages)   2008

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  • Hydrogen passivation of Si and Ge rings

    Y. Kamiura, Y. Yamashita, S. Lin, Y. Kobayashi, Y.Ishikawa, K. Wada

    Proc. of The 5th International Symposium on Advanced Science and Technology of Silicon Materials   O-02(3pages)   2008

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  • Electron spin resonance study of platinum-manganese complexes in Si

    T. Ishiyama, N. Murakami, Y. Yamashita, Y. Kamiura

    Proc. of The 5th International Symposium on Advanced Science and Technology of Silicon Materials   L-17(5pages)   2008

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  • Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

    Yoshifumi Yamashita, Yoshifumi Sakamoto, Yoichi Kamiura, Takeshi Ishiyama

    PHYSICA B-CONDENSED MATTER   401   218 - 221   2007.12

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    We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was confirmed to be under the interface between SiGe and Si that emerged on the bevel surface during hydrogen treatment. We investigated the depth of resistivity-reduced regions which was formed by various hydrogenating conditions and found that the region was extended to the same depth as the penetration depth of hydrogen. We concluded that the low-resistivity region was formed under the influence of hydrogen introduced from bevel surface. We attributed this resistivity reduction to formation of some defects which originally existed at the interface and diffused into Si substrate with hydrogen. (C) 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physb.2007.08.150

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  • Enhancement of blue emission from GaN films and diodes by water vapor remote plasma treatment

    Y. Kamiura, M. Ogasawara, K. Fukutani, T. Ishiyama, Y. Yamashita, T. Mitani, T. Mukai

    PHYSICA B-CONDENSED MATTER   401   331 - 334   2007.12

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    We have studied the effects of water vapor remote plasma treatment (H2O RPT) on emission from Si-doped and undoped n-type GaN films grown on c-face sapphire substrates by the atmospheric-pressure metalorganic chemical vapor deposition method. We found by photoluminescence (PL) spectroscopy at 77K that H2O RPT enhanced violet emission from the n-type GaN films, similarly to the previously observed enhancing effect on blue emission from Mg-doped p-type GaN films. We also observed that H2O RPT reduced the intensity of ESR signal comprising of two peaks detected at 4.2 K in undoped n-type films and increased their resistivity measured at room temperature. We ascribe the enhancing effect of H2O RPT to the passivation of non-radiative recombination centers by hydrogen produced by H2O RPT. We formed GaN p-n diodes from the layer structure of p-GaN:Mg/n-GaN:Si/sapphire, and carried out electroluminescence (EL) measurements of the diodes at 77 K. We observed that EL intensity was also enhanced by H2O RPT. (c) 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physb.2007.08.180

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  • Characteristic of strained SiGe film preventing hydrogen from penetrating into Si substrate detected by spreading resistance method

    Yoshifumi Yamashita, Yoshifumi Sakamoto, Yoichi Kamiura, Takeshi Ishiyama

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 4A )   1622 - 1624   2007.4

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    We investigated the resistivity depth profile of an episystem of a SiGe film on a Si substrate, which was hydrogen-treated by remote plasma by the spreading resistance method. We examined hydrogen penetration by monitoring the resistivity change of the Si substrate due to acceptor passivation by hydrogen. We found that the resistivity of the Si substrate covered by an as-grown SiGe film was not elevated. This indicates that it is extremely difficult for hydrogen atoms to penetrate strained SiGe epi-films. On the other hand, hydrogen atoms can easily penetrate Si films and annealed SiGe films. These results are presumably explained by the misfit strain of epifilms.

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  • Charge-state and isotope effects on the recovery process of stress-induced reorientation of Pt-H-2 complex in silicon

    Namula Bao, Yoichi Kamiura, Yoshifumi Yamashita, Takeshi Ishiyama

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 3A )   907 - 912   2007.3

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    We have studied the local motion of hydrogen around a platinum impurity in Si, which was directly probed by measuring the recovery process of stress-induced reorientation of the Pt-H-2 complex by isothermal deep-level transient spectroscopy (IT-DLTS), We found that hydrogen more easily moved in the singly negative charge state of the Pt-H-2 complex than in the doubly negative charge state, and determined the activation energies for the recovery process to be 0.28 and 0.4 eV in the singly and doubly negative charge states, respectively, from a series of isothermal annealing experiments. We also found that the recovery rate of the Pt-D-2 complex in the singly negative charge state is 80% that of the Pt-H-2 complex with the same activation energy of 0.28 eV. This isotope effect clearly proves that both complexes have the same atomic configuration and that their recovery process is governed by the atomic jump of hydrogen (deuterium).

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  • Effects of hydrogen on resistivity depth profile of SiGe/p-Si detected by spreading resistance method

    Yoshifumi Yamashita, Yoshifumi Sakamoto, Takeshi Ishiyama, Yoichi Kamiura

    Proc. of The Forum on the Science and Technology of Silicon Materials 2007   209 - 216   2007

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  • The electronic states of platinum-hydrogen defects and hydrogen motion in Si observed by DLTS and IR techniques under uniaxial stress

    K. Sato, Y. Kamiura, T. Ishiyama, Y. Yamashita

    Proc. of The Forum on the Science and Technology of Silicon Materials 2007   258 - 274   2007

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  • Effects of compressive stress on the electronic states and atomic configurations of the Pt-H-2 defect in silicon

    Yoichi Kamiura, Kimihiro Sato, Yoshifumi Yamashita, Takeshi Ishiyama

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   134 ( 2-3 )   213 - 217   2006.10

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    We review our recent results and analyses of the effects of uniaxial compressive stress on the electronic states and atomic configurations of a platinum-dihydrogen (Pt-H-2) defect in Si, and discuss the results on the basis of the structural model that we proposed. We applied a technique of isothermal deep-level transient spectroscopy (IT-DLTS), combined with the application of uniaxial compressive stress. Our experiments showed that (111) and (10 0) stresses split the IT-DLTS peak of the Pt-H2 defect into two components, and a (110) stress split it into three components. Such a splitting pattern and the observed intensity ratios of split components uniquely determined that the defect had C-2v,C- symmetry, on which our structural model was based. We found that the electronic levels corresponding to split components varied linearly with (111) stress. Subtracting the stress shift of the conduction band minima, we have obtained 36 +/- 4 meV/GPa as a net increase in energy for the level with the higher energy with respect to the applied stress. This result strongly suggests that compressive stress raises the energy of the Pt-H-2 level, indicating its antibonding character. We observed that the Pt-H-2 defect was aligned above 80 K under uniaxial stress to the configuration with the higher electronic level. This indicates that the stress-induced increase of level energy was overcome by the energy gain due to electronic bonding and atomic relaxation, resulting in the decrease of the total energy of the Pt-H-2 defect system. We found that the intensity ratio of split components of the IT-DLTS peak was described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress up to 0.4 GPa with a proportional factor, 49 meV/GPa, from which we determined an element A3 of the piezospectroscopic tensor to be -37 meV/GPa. (c) 2006 Elsevier BX All rights reserved.

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  • Effects of hydrogen on depth profile of resistivity of SiGe on Si substrate

    Y Yamashita, Y Kamiura, T Miyasako, T Shiotani, T Ishiyama

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 5A )   3994 - 3996   2006.5

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    We report that the resistivity of SiGe films deposited on a B-doped Si substrate by solid-source molecular beam epitaxy (MBE) is reduced by postgrowth hydrogen treatment and the subsequent annealing. This effect was observed near a bevel surface finished by mechanical polishing. Therefore, the damaged surface layer played an important role in this effect. The same reduction in the resistivity of the SiGe films was also observed by intentional supplying hydrogen during film deposition. These phenomena indicate that hydrogen assists the electrical activation of boron.

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  • Local motion of hydrogen around platinum in Si

    N Bao, Y Kamiura, Y Yamashita, T Ishiyama

    PHYSICA B-CONDENSED MATTER   376   81 - 84   2006.4

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    We have studied the local motion of hydrogen around platinum in Si from the recovery kinetics of stress-induced reorientation of the Pt-H-2 Complex. We evaluated the degree of alignment using isothermal DLTS (IT-DLTS) technique under a stress of 0.6 GPa along the &lt; 111 &gt; direction at 70 K where hydrogen Could not move. We observed the recovery at temperatures of 80-85 K only in the singly negative charge state of the Pt-H-2 complex, indicating the similar charge-state-dependent motion of hydrogen as in the stress-induced reorientation of the complex. We obtained an activation energy of 0.25 eV for the recovery process, being comparable with that for the stress-induced reorientation. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physb.2005.12.022

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  • Stress-induced reorientation of the Pt-H-2 complex in Si

    K Sato, Y Kamiura, Y Yamashita, T Ishiyama

    PHYSICA B-CONDENSED MATTER   376   77 - 80   2006.4

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    We have studied stress-induced reorientation of the Pt-H-2 complex in Si using isothermal deep-level transient spectroscopy (IT-DLTS) technique under uniaxial compressive stress. We have found that the intensity ratio of split components of the IT-DILTS peak for various magnitudes of applied stress up to 0.4 GPa is described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress. The proportional factor is connected to an element of the piezospectroscopic tensor. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physb.2005.12.021

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  • Effects of hydrogen treatment on strain relaxation of SiGe epi-layer on Ge substrate

    Y Yamashita, R Nakagawa, Y Sakamoto, T Ishiyama, Y Kamiura

    PHYSICA B-CONDENSED MATTER   376   204 - 207   2006.4

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    Effects of hydrogen treatment on post-growth strain relaxation of GeSi epitaxial films on Ge substrate were studied. We found that pre-hydrogen treatment at room temperature enhanced strain relaxation during subsequent thermal treatment. We also confirmed that the relaxation enhancement effect became small as the annealing time was elongated and the temperature was raised. These results mean that the effect is more remarkable in the early stage of relaxation. In order to investigate the mechanism of this effect, threading dislocation velocity was measured. However, it was not enhanced by pre-hydrogenation. This fact strongly suggests that the relaxation enhancement effect was caused by increase of dislocation sources, which are attributed to hydrogen atoms incorporated into GeSi film. (c) 2005 Elsevier B.V. All rights reserved.

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  • Enhancement of photoluminescence at 1.54 mu m from Er in strained Si and SiGe

    T Ishiyama, S Yoneyama, Y Yamashita, Y Kamiura, T Date, T Hasegawa, K Inoue, K Okuno

    PHYSICA B-CONDENSED MATTER   376   122 - 125   2006.4

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    We studied on the photoluminescence (PL) properties of Er in tensile-strained Si on a SiGe layer (Si:Er:O/SiGe) and compressively strained SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy (MBE). Er-related luminescence was observed around 1.54 mu m in both tensile- and compressively strained samples. The PL intensities of strained Si:Er:O/SiGe and SiGe:Er:O/Si samples were much stronger than those of unstrained Si:Er:O/Si samples. Moreover, intensive luminescence was observed in strained samples with low Er concentrations far below 10(18)CM(-3). The PL spectra of Si:Er:O/SiGe samples were broader than those of unstrained Si:Er:O/Si samples. On the other hand, no significant differences in the width between SiGe:Er:O/Si and unstrained samples were observed. These differences in the PL intensity between strained and unstrained samples strongly suggest that the optical activation of Er in Si and SiGe can be enhanced by the presence of strain. (c) 2005 Elsevier B.V. All rights reserved.

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  • Electron spin resonance of platinum pair complex in silicon

    T Ishiyama, T Fukuda, Y Yamashita, Y Kamiura

    PHYSICA B-CONDENSED MATTER   376   89 - 92   2006.4

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    We investigated a Pt-Pt pair in Si by electron spin resonance (ESR) measurement. Two kinds of ESR spectra from Pt-Pt pairs which had been already reported were not detected. However, we observed other ESR spectrum of Pt-Pt pair. The ESR spectrum showed the hyperfine structure corresponding to two equivalent Pt atoms. The anisotropic g-tensor obtained by analyzing the angular dependence of the ESR signals indicated the orthorhombic (C-2 nu) symmetry with the g-values of g(x) = 2.11, g(y), = 2.3 1, g(z) = 2.09. The g(z) axis was along [001] direction. The g(y) and g(z) axes were along [110] and [1 (1) over bar0] directions, respectively. The ESR spectrum of Pt-Pt pair was observed in the sample only tinder illumination. This Suggests that a change in the charge state of Pt-Pt pair is caused by carrier excitation. (c) 2005 Elsevier B.V. All rights reserved.

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  • Enhancement of blue emission from Mg-doped GaN using remote plasma containing atomic hydrogen

    Y Kamiura, M Kaneshiro, J Tamura, T Ishiyama, Y Yamashita, T Mitani, T Mukai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 28-32 )   L926 - L928   2005

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    We have found for the first time that blue emission from Mg-doped GaN was greatly enhanced by remote plasma treatment (RPT) with plasma containing atomic hydrogen, in particular, water vapor plasma, at low temperatures of 300-400 degrees C. The highest enhancing factor was twenty, achieved by water vapor RPT at 400 degrees C for 30 min. The enhanced blue emission was stable up to 500 degrees C, similarly to blue emission from as-grown samples, suggesting the same origin and mechanism. We have confirmed that the emission mechanism is donor-acceptor pair (DAP) recombination, and have concluded that RPT produces a hydrogen-related donor level at E-c - 0.37 eV involved in the DAP emission.

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  • Observation of long relaxation from Fe-0(3d(8)) to Fe+(3d(7)) by electron spin resonance measurement

    T Ishiyama, T Hiramatsu, Y Yamashita, Y Kamiura

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   43 ( 1 )   9 - 11   2004.1

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    We studied the change in the 3d-shell configurations of Fe in B-doped Si under illumination by electron spin resonance (ESR) measurement. ESR signals originating from Fe-i(+)(3d(7)) and Fe-i(0)(3d(8)) were observed in Fe- and B-doped Si. The ESR signal of Fe-i(+)(3d(7)) disappeared and the signal intensity of Fe-i(0)(3d(8)) increased under illumination. These changes of the ESR signals under illumination were caused by the change in the charge state from Fe-i(+)(3d(7)) to Fe-i(0)(3d(8)) due to the capture of an electron. Subsequently, the process of recovery from Fe-i(0)(3d(8)) to Fe-i(+)(3d(7)) due to the capture of a hole was observed after the light was turned off. We found that the relaxation time from Fe-i(0)(3d(8)) to Fe-i(+)(3d(7)) was approximately 30 s at 8 K. This was much longer than the lifetime of a free hole.

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  • Effect of uniaxial stress on the electronic state of a platinum-dihydrogen complex in silicon and charge-state-dependent motion of hydrogen during stress-induced reorientation

    Y Kamiura, K Sato, Y Iwagami, Y Yamashita, T Ishiyama, Y Tokuda

    PHYSICAL REVIEW B   69 ( 4 )   2004.1

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    We have combined isothermal deep-level transient spectroscopy (IT-DLTS) technique with the application of uniaxial compressive stress along &lt;111&gt; direction to study the effect of stress on the electronic state of a platinum-dihydrogen complex in Si and the kinetics of charge-state-dependent motion of hydrogen around the Pt atom during stress-induced reorientation. We have found that the application of stress splits the IT-DLTS peak into two components and the electronic energy of the short-time component increases linearly with &lt;111&gt; compressive stress as 35+/-4 meV/GPa, indicating antibonding character. We have also studied the reorientation kinetics of the complex under the applied stress, and have found that the defect aligned at 78-88 K in the configuration with the smallest activation energy of the level only when the level was not occupied by an electron. This indicates a clear charge-state effect on the local motion of hydrogen around the Pt atom, that is, hydrogen is mobile only in the singly negative charge state of the complex. We have estimated an activation energy 0.27 eV for the hydrogen motion around the Pt atom under a stress of 0.6 GPa. We have examined three structural models, among which a model where the two hydrogen atoms are directly bonded to the platinum atom may be the most plausible candidate. In this structure, defect reorientation needs no bond switching but only the rotation of the whole Pt-H-2 entity. A possible mechanism of the charge-state-dependent reorientation observed may be that if the electronic state with antibonding character is occupied by an electron, the two hydrogen atoms may be displaced outward, probably retarding their motion for the reorientation.

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  • Comparative study of electronically controlled motion of hydrogen around carbon and platinum atoms in silicon

    Y Kamiura, N Bao, K Sato, K Fukuda, Y Iwagami, Y Yamashita, T Ishiyama

    HYDROGEN IN SEMICONDUCTORS   813   27 - 32   2004

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    We have studied the local motion of hydrogen in the neighborhood of carbon and platinum impurities by observing the stress-induced reorientation and subsequent recovery of two H-related (H-C and Pt-H-2) complexes in Si, using deep-level transient spectroscopy (DLTS) under uniaxial compressive stress. We notice two interesting differences in hydrogen motion around carbon and platinum atoms. The first one is a difference in the temperature where stress-induced reorientation occurs. That of the H-C complex occurs at high temperatures above 250 K, while it occurs at low temperatures around 80 K for the Pt-H2 complex. The second difference is the effect of charge state of the complexes on their stress-induced reorientation and subsequent recovery. It occurs preferentially when an electron occupies the level of the H-C complex, but the Pt-H-2 complex has the reverse effect of level occupancy. These differences are discussed from viewpoint of different atomic configurations and electronic states of two H-related complexes.

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  • Strain-enhanced photoluminescence of Er in strained Si and SiGe layers

    T. Ishiyama, Y. Kamiura, S. Yoneyama, Y. Yamashita, T. Date, T. Hasegawa, K. Inoue, K. Okuno

    Proceedings of The 4th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium)   2004

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  • Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

    T Ishiyama, M Yoshida, Y Yamashita, Y Kamiura, T Date, T Hasegawa, K Inoue, K Okuno

    PHYSICA B-CONDENSED MATTER   340   818 - 822   2003.12

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    We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 mum in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 x 10(16) cm(-3). On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er. (C) 2003 Elsevier B.V. All rights reserved.

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  • Study of the deep level related to a platinum-dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress

    Y Kamiura, Y Iwagami, K Fukuda, Y Yamashita, T Ishiyama, Y Tokuda

    MICROELECTRONIC ENGINEERING   66 ( 1-4 )   352 - 357   2003.4

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ELSEVIER SCIENCE BV  

    We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum- and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application of &lt;100&gt; and &lt;111&gt; stresses split the DLTS peak of the defect into two components with intensity ratios of 23:1 and 1.1:1, respectively, which were ratios of short- to long-time components. Under &lt;110&gt; stress, the peak split into three components with an intensity ratio of 0.8:3.7:1. Comparing this splitting pattern to the piezospectroscopic theory of Kaplyanskii, we have uniquely determined that the defect has the orthorhombic symmetry with the C-2v point group, and have identified the defect as the Pt-H-2 complex previously identified by Uftring et al. [Phys. Rev. B 51 (1995) 9612]. We also observed that the defect was reoriented above 80 K along the applied uniaxial stress. Such reorientation occurred only when the defect level was not occupied by an electron. Our observation strongly suggests that the local motion of hydrogen around the Pt atom is remarkably affected by the charge state of the defect. (C) 2002 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0167-9317(02)00941-3

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  • Effects of hydrogen atoms on postannealing of phosphorus-ion implanted silicon

    Y Yamashita, Y Kamiura, Yamamoto, I, T Ishiyama, Y Sato

    JOURNAL OF APPLIED PHYSICS   93 ( 1 )   134 - 138   2003.1

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    The ion implantation process used in silicon device processing needs a postannealing at as high as 1000 degreesC to recover the damages induced by high-energy ion bombardment and to electrically activate implanted impurities. We developed a postannealing treatment using remote-hydrogen plasma to reduce the annealing temperature. We found that our postannealing treatment more greatly reduced the resistivity of the surface region, which was very high just after implantation. The dependence of resistivity-reduction rate on annealing temperature was weaker for the annealing with hydrogen plasma than for the normal annealing. Therefore the enhancing effect by hydrogen was remarkable at lower temperature in the range of 250-350 degreesC. The less the dose quantity was, the stronger the enhancing effect was observed. The postannealing using hydrogen plasma with the power of 50 W at 300 degreesC for 2 h showed almost the same performance as the usual rapid thermal annealing process at 1000 degreesC for 30 s. (C) 2003 American Institute of Physics.

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  • Effects of Hydrogen on Atomic Motion in Semiconductors

    Yoshifumi Yamashita, Yoich Kamiura, Takeshi Ishiyama

    Proc. of the Forum on the Science and Technology of Silicon Materials 2003   2003

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  • Efficient emission from erbium in strained silicon

    Takeshi Ishiyama, Yoichi Kamiura, Mamoru Yoshida, Yoshifumi Yamashita

    Proc. of the Forum on the Science and Technology of Silicon Materials 2003   2003

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  • Photoluminescence of Er in strained Si on SiGe layer

    T Ishiyama, S Nawae, T Komai, Y Yamashita, Y Kamiura, T Hasegawa, K Inoue, K Okuno

    JOURNAL OF APPLIED PHYSICS   92 ( 7 )   3615 - 3619   2002.10

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    We studied photoluminescence of Er in strained Si on a SiGe layer (Si:Er:O/SiGe) and unstrained Si on a Si layer (Si:Er:O/Si) grown by molecular beam epitaxy. Er-related photoluminescence was observed in both Si:Er:O/SiGe and Si:Er:O/Si samples. The peak intensity of Si:Er:O/SiGe at 1.54 mum was higher than that of Si:Er:O/Si. Moreover, the spectrum of strained Si (Si:Er:O/SiGe) was much broader than that of unstrained Si (Si:Er:O/Si). These differences between Si:Er:O/SiGe and Si:Er:O/Si suggest that the optical activation of Er can be enhanced by the presence of strain. (C) 2002 American Institute of Physics.

    DOI: 10.1063/1.1506391

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  • Electronically controlled motion of hydrogen in silicon Reviewed

    Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama

    Physical Review B - Condensed Matter and Materials Physics   65   1132051 - 1132054   2002.3

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    We report on the quantitative study of charge-state-dependent local motion of hydrogen around carbon in Si, which was directly probed by measuring the recovery of stress-induced alignment of a hydrogen-carbon complex by means of deep-level transient spectroscopy under uniaxial stress. We have found that hydrogen jumps from a bond-centered site between C and Si atoms to another with an activation energy of 1.33 eV and a frequency factor of 7.1 × 1014s-1in the electron-empty charge state while hydrogen jumps much faster in the electron-occupied charge state with a lower activation energy of 0.55 eV and a smaller frequency factor of 3.3 × 106s-1. We have concluded that the hydrogen-carbon complex captures an electron from the conduction band at its gap state with antibonding character, lowering the barrier and frequency factor for hydrogen motion in the electron-occupied charge state.

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  • Electronically controlled motion of hydrogen in silicon

    Y Kamiura, K Fukuda, Y Yamashita, T Ishiyama

    PHYSICAL REVIEW B   65 ( 11 )   2002.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMERICAN PHYSICAL SOC  

    We report on the quantitative study of charge-state-dependent local motion of hydrogen around carbon in Si, which was directly probed by measuring the recovery of stress-induced alignment of a hydrogen-carbon complex by means of deep-level transient spectroscopy under uniaxial stress. We have found that hydrogen jumps from a bond-centered site between C and Si atoms to another with an activation energy of 1.33 eV and a frequency factor of 7.1 x 10(14) s(-1) in the electron-empty charge state while hydrogen jumps much faster in the electron-occupied charge state with a lower activation energy of 0.55 eV and a smaller frequency factor of 3.3 x 10(6) s(-1). We have concluded that the hydrogen-carbon complex captures an electron from the conduction band at its gap state with antibonding character, lowering the barrier and frequency factor for hydrogen motion in the electron-occupied charge state.

    DOI: 10.1103/PhysRevB.65.113205

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  • Charge-state-dependent Motion of Hydrogen in Si

    Y. Kamira, K. Fukuda, Y. Yamashita, T. Ishiyama

    Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations   2002

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  • Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy

    T. Ishiyama, Y. Yamashita, K. Kamiura

    Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations   2002

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  • Dislocation Glide Motion in Semiconductors Enhanced by Hydrogen

    Y. Yamashita, K. Kamiura, T. Ishiyama, K. Maeda

    Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations   2002

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  • Stress-induced level shift of a hydrogen-carbon complex in silicon

    K Fukuda, Y Kamiura, Y Yamashita, T Ishiyama

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   40 ( 12 )   6700 - 6704   2001.12

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    We have studied the stress-induced shift of a deep level at E-c - 0.15 eV due to a hydrogen-carbon complex in Si using deep-level transient spectroscopy (DLTS) under uniaxial compressive stress. Linear stress dependencies of the ionization energy of the above level were observed for five components of split DLTS peaks altogether for (111), (110) and (100) stresses. By subtracting the stress shifts of conduction band minima from the stress dependencies of ionization energy, die net stress shifts of the energy level were obtained. Two piezospectroscopic parameters, A(1) and A(2), were determined as approximately 4 and -9.5 meV/GPa, respectively. Considering a molecular-orbital schematic suggested here and throughout, we conclude that the stress-induced level shifts and the split pattern of DLTS peaks reflect the trigonal symmetry and antibonding character of the electronic state of the complex. These properties are completely consistent with the atomic configuration in which a hydrogen atom occupies the bond-centered site between Si and C atoms.

    DOI: 10.1143/JJAP.40.6700

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  • Stress-induced splitting of the electronic level related to a platinum-hydrogen complex in silicon

    K Fukuda, Y Iwagami, Y Kamiura, Y Yamashita, T Ishiyama

    PHYSICA B-CONDENSED MATTER   308   240 - 243   2001.12

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    We have applied deep-level transient spectroscopy (DLTS) under uniaxial compressive stress to study the structure of a platinum- and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band minima in Si. The application of &lt;100&gt; and &lt;111&gt; stresses split the DLTS peak of the defect into two components with intensity ratios of 2.7:1 and 1.4:1, respectively, which were the ratios of the low-temperature peak to the high-temperature peak. Under &lt;110&gt; stress, this peak split into three components as an intensity ratio of two lower-temperature peaks to the high-temperature peak was 1.4:5:1. In addition, we observed the stress-induced alignment of the defect to the configuration corresponding to the low-temperature DLTS peak during the DLTS scan in the temperature range of 65-100 K, for all stress directions. Our results provide the first evidence to connect the electronic level at E-c-0.14 eV to the atomic configuration of the Pt-H-2 complex with the C-2v symmetry previously identified by EPR. (C) 2001 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0921-4526(01)00682-2

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  • Effects of uniaxial stress on the electronic state of the hydrogen-carbon complex in silicon

    K Fukuda, Y Kamiura, Y Yamashita, T Ishiyama

    PHYSICA B   302   227 - 232   2001.8

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    We applied deep-level transient spectroscopy (DLTS) under uniaxial stress to study the structure and bonding character of a hydrogen-carbon complex. The application of (1 1 1) and (1 1 0) compressive stresses split the DLTS peak into two as intensity ratios of 1:3 and 2:2, respectively, which were the ratios of the low-temperature peak to the high-temperature peak. No splitting was observed under the (1 0 0) stress. These results indicate the trigonal symmetry of the complex and the antibonding character of its electronic state, and are consistent with the previously proposed atomic model of the complex, in which the hydrogen atom occupies the bond-centered site between silicon and carbon atoms. Furthermore, under the (1 1 1) stress, we observed that the energy of the electronic state corresponding to the low-temperature DLTS peak increased linearly with stress by 23 +/- 5 meV/GPa while that of the high-temperature peak only slightly decreased with stress by 6 +/- 5 meV/GPa. Under the (1 1 0) stress, the energy of the electronic state of the low-temperature peak had almost no stress dependency and that of the high-temperature peak decreased linearly with stress by 15 +/- 5 meV/GPa. Based on the above atomic model, we can consistently understand the opposite stress dependencies under (1 1 1) and (1 1 0) compressive stresses, considering the atomic displacement of the H-C complex under the stress. (C) 2001 Published by Elsevier Science B.V.

    DOI: 10.1016/S0921-4526(01)00433-1

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  • Electronic States and Structures of Hydrogen-Related Defects and Local Motion of Hydrogen in Silicon

    Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama

    Proc. of the Forum on the Science and Technology of Silicon Materials 2001   2001

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  • Isotope Effects on the Dissociation of a Hydrogen–Carbon Complex in Silicon

    Kamiura Yoichi, Fukuda Kazuhisa, Ohyama Shigeki, Yamashita Yoshifumi

    Jpn J Appl Phys   39 ( 3A )   1098 - 1099   2000.3

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    We have found, by deep-level transient spectroscopy (DLTS), that the dissociation rate of a deuterium-carbon complex in silicon is about half that of a hydrogen-carbon complex, while the activation energies for the dissociation of both the complexes are the same. This clearly proves that both the complexes have the same atomic configuration and their dissociation is governed by the atomic jump of hydrogen (deuterium).

    DOI: 10.1143/JJAP.39.1098

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  • Annihilation of thermal double donors in silicon

    Yoichi Kamiura, Yoshinori Takeuchi, Yoshifumi Yamashita

    Journal of Applied Physics   87 ( 4 )   1681 - 1689   2000

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    We performed systematic experiments on the annihilation of six species of thermal double donors, or TDDs (TDD1-TDD6) under various conditions in both carbon-lean and carbon-rich Si crystals, by means of low-temperature infrared spectroscopy. We found that two kinds of TDD annihilation occurred in two different time regions. The first annihilation occurred typically within 1000 min at 500°C, and is ascribed to the dissociation of oxygen clusters responsible for TDDs. We analyzed TDD annihilation on the basis of the model of successive dissociation of oxygen clusters, and obtained an activation energy of about 4 eV and a pre-exponential factor of the order of 1022s-1, regardless of TDD species and carbon density. We discuss the origin of such a high activation energy and a large pre-exponential factor. The second annihilation occurred typically after 1000 min at 500°C, and is ascribed to the neutralization of TDDs. The neutralization behavior strongly depends on the amount of carbon in the silicon crystals. The C-rich crystal shows the usual thermal activation process with an activation energy of 1.7 eV and a pre-exponential factor of about 106s-1, independently of TDD species. On the other hand, the C-lean crystal shows no distinct temperature dependence on neutralization rate, suggesting an athermal process. These results strongly suggest two different mechanisms of TDD neutralization, one of which is related to carbon and the other independent of carbon. We propose models to explain the features of these two kinds of TDD neutralization. © 2000 American Institute of Physics.

    DOI: 10.1063/1.372077

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  • Hydrogen enhanced dislocation glides in silicon

    Y Yamashita, F Jyobe, Y Kamiura, K Maeda

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   171 ( 1 )   27 - 34   1999.1

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    We have studied the effects of irradiation of hydrogen plasma on the dislocation glide motion. The velocity of dislocation motion was remarkably enhanced by the irradiation in the temperature range below about 480 degrees C and the activation energy was reduced to 1.2 eV under hydrogen plasma from 2.2 eV in the hydrogen-free condition. We experimentally confirmed that this effect is owing neither to the light from the plasma nor to any defects induced by the irradiation but is due to the hydrogens incorporated into the sample. We also found that pre-hydrogenation treatments play an essential role for this effect to occur. The microscopic mechanism and implications of the experimental findings are discussed in the framework of the Peierls mechanism.

    DOI: 10.1002/(SICI)1521-396X(199901)171:1<27::AID-PSSA27>3.3.CO;2-S

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  • Oxygen Clustering and Precipitation in Silicon : Influence of Carbon and Hydrogen

    Yoichi Kamiura, Yoshifumi Yamashita

    Proc. Kazusa Academia Park Forum on the Science and Technology of Silicon Materials   1999

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  • Phosphorus diffusion from doped polysilicon through ultrathin SiO2 films into Si substrates

    Y Tsubo, Y Komatsu, K Saito, S Matsumoto, Y Sato, Yamamoto, I, Y Yamashita

    PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY   99 ( 2 )   116 - 122   1999

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:ELECTROCHEMICAL SOCIETY INC  

    The diffusion of phosphorus into ultrathin oxides from phosphorus doped polysilicon sources was studied. The two boundary diffusion model can be applied to the diffusion of phosphorus in ultrathin oxides, and the diffusivity and segregation coefficient were obtained using by the model. The dependence of the diffusion coefficient on oxide thickness and drive-in ambients was investigated. The enhanced diffusion, which has been seen for boron diffusion in ultrathin oxides, was not observed for the phosphorus diffusion. For the diffusion in dry O-2 and wet O-2 ambients, the enhanced diffusion was observed and is attributed to melt through diffusion in glassy compounds.

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  • Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films

    Kamiura Yoichi, Yamashita Yoshifumi, Nakamura Shuji

    Jpn J Appl Phys   37 ( 8 )   L970 - L971   1998.8

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    We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450&deg;C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.

    DOI: 10.1143/JJAP.37.L970

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  • Formation of Carbon-Related Defects During the Carbon-Enhanced Annihilation of Thermal Donors in Silicon

    Kamiura Yoichi, Maeda Takashi, Yamashita Yoshifumi, Nakamura Minoru

    Jpn J Appl Phys   37 ( 2 )   L101 - L104   1998.2

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    We observed that a defect related to carbon and phosphorus was formed during the carbon-enhanced annihilation of thermal donors at 470&deg;C in silicon. We determined, using deep-level transient spectroscopy (DLTS), that the defect has a deep level at Ec-0.36 eV and its density has positive correlation with carbon and phosphorus densities. The formation rate of the defect is proportional to the phosphorus density. We also observed the 767 meV photoluminescence line (P-line) that had been identified as the complex with a core of interstitial carbon, vacancy and oxygen dimer. We tentatively ascribe the Ec-0.36 eV defect to the pair of interstitial carbon and substitutional phosphorus.

    DOI: 10.1143/JJAP.37.L101

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  • Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism,"jointly worked"

    Kamiura Yoichi, Hayashi Masao, Nishiyama Yoshihide, Ohyama Shigeki, Yamashita Yoshifumi

    Japanese Journal of Applied Physics   36 ( 11 )   6579 - 6590   1997

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    We studied, by deep-level transient spectroscopy (DLTS), the dissociation mechanism of a hydrogen-carbon (H-C) complex, which has a donor level at E c-0.15 eV and acts as an electron trap in crystalline silicon. On the basis of our results and a previously proposed atomic model of the H-C complex, in which the hydrogen atom resides inside a silicon-carbon bond, we have proposed the following dissociation mechanism. The complex is stable in the positive charge state, and to dissociate it needs a hydrogen jump with an activation energy of 1.3 eV to break the bond with carbon and silicon. The complex becomes neutral by capturing an electron from the conduction band or accepting an electron directly from the valence band under electronic excitation, and is consequently dissociated at an activation energy of 0.5 eV due to the loss of binding. Strong evidence for the existence of the negative charge state of hydrogen in crystalline silicon is also presented.

    DOI: 10.1143/JJAP.36.6579

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  • Structure and Stress-Induced Alignment of a Hydrogen-Carbon Complex in Silicon,"jointly worked"

    Kamiura Yoichi, Ishiga Nobuaki, Yamashita Yoshifumi

    Japanese Journal of Applied Physics   36 ( 11A )   L1419-L1421 - L1421   1997

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    We applied deep-level transient spectroscopy (DLTS) under uniaxial stress to study the structure and bonding nature of a hydrogen-carbon (H-C) complex in Si. The application of <111> and <110> compressive stresses split the DLTS peak into two as ratios of 1:3 and 2:2, respectively, which were the ratios of the low-temperature peak to the high-temperature peak. No splitting was observed under the <100> stress. These results indicate the trigonal symmetry of the H-C complex and the anti-bonding nature of its electronic state. We observed a stress-induced alignment of the complex at 250K for 50 min under a <110> stress of 1 GPa.

    DOI: 10.1143/jjap.36.L1419

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MISC

Presentations

  • Evaluation of Oxygen Plasma Treatment Effect on β-Ga₂O₃ by CV Method

    2023.11.25 

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    Event date: 2023.11.25

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  • Effects of Remote Oxygen Plasma Treatment on CV Properties of β-Ga₂O₃

    Miu Mizuta, Yoshifumi Yamashita, Toshimitsu Ito, Takeshi Nishikawa, Hiroo Suzuki, Yasuhiko Hayashi

    2023.7.29 

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    Event date: 2023.7.29

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Properties of a Nickel-related electronic level in multi-crystalline silicon for solar cells

    Yuito Terada, Yoshifumi Yamashita, Hiroo Suzuki, Takeshi Nishikawa, Yasuhiko Hayashi

    The 8th International Symposium on Advanced Science and Technology of Silicon Materials  2022.11.7 

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    Event date: 2022.11.7 - 2022.11.9

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  • 多結晶Si中の粒界上のNi関連準位の消滅過程

    寺田唯人, 山下善文, 鈴木弘朗, 西川亘, 林靖彦

    第83回応用物理学会秋季学術講演会  2022.9.20 

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    Event date: 2022.9.20 - 2022.9.23

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • 多結晶Si中Ni関連準位消滅過程の2状態モデルによる解析

    寺田唯人, 山下善文, 鈴木弘朗, 西川亘, 林靖彦

    2022年度応用物理学会中国四国支部若手半導体研究会  2022.8.22 

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    Event date: 2022.8.22

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  • 水素及び酸素プラズマ処理によるβ-Ga2O3のドナー密度変化

    水田未羽, 赤迫瑞輝, 山下善文, 伊藤 利充, 西川 亘, 鈴木 弘朗, 林 靖彦

    2022年度応用物理学会中国四国支部若手半導体研究会  2022.8.22 

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  • 多結晶Si中Ni関連準位消滅過程の等温焼鈍実験による研究

    寺田唯人, 山下善文, 鈴木弘朗, 西川亘, 林靖彦

    2022年度応用物理・物理系学会中国四国支部合同学術講演会  2022.7.30 

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    Event date: 2022.7.30

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  • β-Ga2O3に対する水素プラズマ処理効果のCV法による評価

    水田未羽, 赤迫瑞輝, 山下善文, 伊藤 利充, 西川 亘, 鈴木 弘朗, 林 靖彦

    2022年度応用物理・物理系学会中国四国支部合同学術講演会  2022.7.30 

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    Event date: 2022.7.30

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  • 水素処理したβ-Ga2O3のドナー密度の深さ分布と経時変化

    赤迫 瑞輝,山下 善文,伊藤 利充,鈴木 弘郎, 西川 亘, 林 靖彦

    2021年度応用物理学会中国四国支部若手半導体研究会  2021.8.23 

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    Event date: 2021.8.23

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  • 多結晶Si中Ni関連準位に対するNi拡散熱処理後冷却速度の影響

    寺田唯人,山下善文,鈴木弘朗,西川亘,林靖彦

    2021年度応用物理学会中国四国支部若手半導体研究会  2021.8.23 

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    Event date: 2021.8.23

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  • 水素処理したβ-Ga2O3のドナー密度の深さ分布と経時変化

    赤迫 瑞輝,山下 善文,伊藤 利充,鈴木 弘郎, 西川 亘, 林 靖彦

    2021年度応用物理学会中国四国支部若手半導体研究会  2021.8.23 

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    Event date: 2021.8.23

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  • 多結晶Si中Ni関連準位に対するNi拡散熱処理後冷却速度の影響

    寺田唯人,山下善文,鈴木弘朗,西川亘,林靖彦

    2021年度応用物理学会中国四国支部若手半導体研究会  2021.8.23 

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  • Ni拡散熱処理後徐冷した多結晶Si中の不純物準位

    寺田唯人,山下善文,鈴木弘朗,西川亘,林靖彦

    2021年度応用物理・物理系学会中国四国支部合同学術講演会  2021.7.31 

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    Event date: 2021.7.31

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • β-Ga2O3の電気特性に対する水素処理効果と経時変化

    赤迫 瑞輝,山下 善文,伊藤 利充,鈴木 弘郎, 西川 亘, 林 靖彦

    2021年度応用物理・物理系学会中国四国支部合同学術講演会  2021.7.31 

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    Event date: 2021.7.31

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Ni拡散熱処理後徐冷した多結晶Si中の不純物準位

    寺田唯人,山下善文,鈴木弘朗,西川亘,林靖彦

    2021年度応用物理・物理系学会中国四国支部合同学術講演会  2021.7.31 

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  • β-Ga2O3の電気特性に対する水素処理効果と経時変化

    赤迫 瑞輝,山下 善文,伊藤 利充,鈴木 弘郎, 西川 亘, 林 靖彦

    2021年度応用物理・物理系学会中国四国支部合同学術講演会  2021.7.31 

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    Event date: 2021.7.31

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  • 分⼦動⼒学法を⽤いたカーボンナノチューブ点⽋陥修復条件の最適化

    山田雅人,井上寛隆,鈴⽊弘朗,⻄川 亘,⼭下善⽂,林 靖彦

    第47回炭素材料学会年会  2020.12.10 

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    Event date: 2020.12.9 - 2020.12.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 分⼦動⼒学法を⽤いたカーボンナノチューブ点⽋陥修復条件の最適化

    山田雅人,井上寛隆,鈴⽊弘朗,⻄川 亘,⼭下善⽂,林 靖彦

    第47回炭素材料学会年会  2020.12.10 

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    Event date: 2020.12.9 - 2020.12.11

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  • 通電加熱によるカーボンナノチューブの熱輸送特性の向上

    重枝勇歩,四⽅ 諒,井上寛隆,⽮嶋 渉,中川智広,鈴⽊弘朗,⻄川 亘,⼭下善⽂,⽻⽥真毅,林 靖彦

    第47回炭素材料学会年会  2020.12.9 

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    Event date: 2020.12.9 - 2020.12.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 基板表⾯形状制御によるアルミニウム箔上への⾼密度カーボンナノチューブアレイ合成

    那須郷平,井上寛隆,中川智広,前⾕光顕,鈴⽊弘朗,⻄川 亘,⼭下善⽂,林 靖彦

    第47回炭素材料学会年会  2020.12.9 

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    Event date: 2020.12.9 - 2020.12.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Fe-Mo 触媒を⽤いた⾼結晶カーボンナノチューブの⾼密度アレイ合成

    前谷光顕,井上寛隆,中川智広,那須郷平,鈴⽊弘朗,⻄川 亘,⼭下善⽂,林 靖彦

    第47回炭素材料学会年会  2020.12.9 

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    Event date: 2020.12.9 - 2020.12.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 配向制御カーボンナノチューブシートを⽤いたフレキシブルスーパーキャパシタの性能評価

    小松原康平,井上寛隆,梅澤成之,中川智広,前⾕光顕,那須郷平,鈴⽊弘朗,⻄川 亘,⼭下善⽂,⽻⽥真毅

    第47回炭素材料学会年会  2020.12.9 

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    Event date: 2020.12.9 - 2020.12.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 連続通電加熱による⻑尺カーボンナノチューブ紡績⽷の⾼強度化

    井上寛隆,中川智広,岸淵美咲,重枝勇歩,前⾕光顕,那須郷平,⽥中佑⼀郎,⼭⽥雅⼈,鈴⽊弘朗,⻄川 亘,⼭下善⽂,⽻⽥真毅, ⾼橋和彦, 林 靖彦

    第47回炭素材料学会年会  2020.12.9 

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    Event date: 2020.12.9 - 2020.12.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 配向制御カーボンナノチューブシートを⽤いたフレキシブルスーパーキャパシタの性能評価

    小松原康平,井上寛隆,梅澤成之,中川智広,前⾕光顕,那須郷平,鈴⽊弘朗,⻄川 亘,⼭下善⽂,⽻⽥真毅

    第47回炭素材料学会年会  2020.12.9 

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  • Fe-Mo 触媒を⽤いた⾼結晶カーボンナノチューブの⾼密度アレイ合成

    前谷光顕,井上寛隆,中川智広,那須郷平,鈴⽊弘朗,⻄川 亘,⼭下善⽂,林 靖彦

    第47回炭素材料学会年会  2020.12.9 

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  • 基板表⾯形状制御によるアルミニウム箔上への⾼密度カーボンナノチューブアレイ合成

    那須郷平,井上寛隆,中川智広,前⾕光顕,鈴⽊弘朗,⻄川 亘,⼭下善⽂,林 靖彦

    第47回炭素材料学会年会  2020.12.9 

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  • 通電加熱によるカーボンナノチューブの熱輸送特性の向上

    重枝勇歩,四⽅ 諒,井上寛隆,⽮嶋 渉,中川智広,鈴⽊弘朗,⻄川 亘,⼭下善⽂,⽻⽥真毅,林 靖彦

    第47回炭素材料学会年会  2020.12.9 

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  • 連続通電加熱による⻑尺カーボンナノチューブ紡績⽷の⾼強度化

    井上寛隆,中川智広,岸淵美咲,重枝勇歩,前⾕光顕,那須郷平,⽥中佑⼀郎,⼭⽥雅⼈,鈴⽊弘朗,⻄川 亘,⼭下善⽂,⽻⽥真毅, ⾼橋和彦, 林 靖彦

    第47回炭素材料学会年会  2020.12.9 

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  • 触媒アシスト加熱延伸処理によるカーボンナノチューブ紡績糸の高強度化

    井上寛隆,中川智広,前谷光顕,那須郷平,鈴木弘朗,西川 亘,山下善文,羽田真毅,高橋和彦,林 靖彦

    第81回応用物理学会秋季学術講演会  2020.9 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 触媒アシスト加熱延伸処理によるカーボンナノチューブ紡績糸の高強度化

    井上寛隆,中川智広,前谷光顕,那須郷平,鈴木弘朗,西川 亘,山下善文,羽田真毅,高橋和彦,林 靖彦

    第81回応用物理学会秋季学術講演会  2020.9 

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  • 多結晶Si中の2つのNi関連準位の逆バイアス電圧下消滅過程

    安田佳史,山下善文, ,西川亘,鈴木弘朗,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 高配向化プロセスの導入によるCNT紡績糸の物性向上

    森光生,井上寛隆,中川智広,那須郷平,前谷光顕,林靖彦,山下善文,鈴木弘朗,西川亘

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 二元触媒による乾式紡績可能なCNTアレイ作製条件の検討

    中川智広,井上寛隆,前谷光顕,鈴木弘朗,西川 亘,山下善文, 林 靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • カーボンナノチューブ高配向シートを用いたフレキシブルスーパーキャパシタの高容量化

    小松原康平,井上寛隆,中川智広,西川亘,鈴木弘朗,山下善文, 林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • アルミニウム箔上カーボンナノチューブの合成における基板表面状態の重要性

    那須郷平,井上寛隆,中川智広,鈴木弘朗,西川亘,山下善文,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Fe-Mo触媒を用いた高密度・高結晶性CNTアレイの合成

    前谷光顕,井上寛隆,中川智広,那須郷平,鈴木弘朗,西川亘,山下善文,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 分子動力学法によるカーボンナノチューブ点欠陥の熱処理修復の解析

    山田雅人,井上寛隆,鈴木弘朗,西川亘,山下善文,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 直鎖低密度ポリエチレン糸ソフトアクチュエータ特性の結晶構造依存性

    藤田優希,井上寛隆,中川智広,吉田啓一郎,松本英俊,宝田 亘,鈴木弘朗,西川 亘,山下善文,林 靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • ホスフィン酸添加によるヨウ化スズセシウムペロブスカイト薄膜の耐久性向上

    中尾航大,Amr ELattar,三島颯司,山下善文,西川亘,鈴木弘朗,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • β-Ga2O3の電気特性に対する水素処理効果

    赤迫瑞輝,山下善文,西川 亘,鈴木弘朗,林 靖彦,伊藤利充

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • ホスフィン酸添加によるヨウ化スズセシウムペロブスカイト薄膜の耐久性向上

    中尾航大,Amr ELattar,三島颯司,山下善文,西川亘,鈴木弘朗,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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  • アルミニウム箔上カーボンナノチューブの合成における基板表面状態の重要性

    那須郷平,井上寛隆,中川智広,鈴木弘朗,西川亘,山下善文,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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  • カーボンナノチューブ高配向シートを用いたフレキシブルスーパーキャパシタの高容量化

    小松原康平,井上寛隆,中川智広,西川亘,鈴木弘朗,山下善文, 林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

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  • 二元触媒による乾式紡績可能なCNTアレイ作製条件の検討

    中川智広,井上寛隆,前谷光顕,鈴木弘朗,西川 亘,山下善文, 林 靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

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  • 高配向化プロセスの導入によるCNT紡績糸の物性向上

    森光生,井上寛隆,中川智広,那須郷平,前谷光顕,林靖彦,山下善文,鈴木弘朗,西川亘

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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  • 分子動力学法によるカーボンナノチューブ点欠陥の熱処理修復の解析

    山田雅人,井上寛隆,鈴木弘朗,西川亘,山下善文,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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    Event date: 2020.8.2

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  • Fe-Mo触媒を用いた高密度・高結晶性CNTアレイの合成

    前谷光顕,井上寛隆,中川智広,那須郷平,鈴木弘朗,西川亘,山下善文,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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  • 多結晶Si中の2つのNi関連準位の逆バイアス電圧下消滅過程

    安田佳史,山下善文, ,西川亘,鈴木弘朗,林靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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  • 直鎖低密度ポリエチレン糸ソフトアクチュエータ特性の結晶構造依存性

    藤田優希,井上寛隆,中川智広,吉田啓一郎,松本英俊,宝田 亘,鈴木弘朗,西川 亘,山下善文,林 靖彦

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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  • β-Ga2O3の電気特性に対する水素処理効果

    赤迫瑞輝,山下善文,西川 亘,鈴木弘朗,林 靖彦,伊藤利充

    2020年度応用物理・物理系学会中国四国支部合同学術講演会  2020.8.2 

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  • Development of flexible supercapacitor using highly aligned carbon nanotube sheet International conference

    Tatsuki Marui, Hirotaka Inoue, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi

    OptoX-NANO 2019  2019.12 

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    Event date: 2019.12.2 - 2019.12.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  • Dry-drawable few-walled carbon nanotube forest synthesized by chemical vapor deposition International conference

    Hirotaka Inoue, Tomohiro Nakagawa, Masaki Hada, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi

    OptoX-NANO 2019  2019.12 

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    Event date: 2019.12.2 - 2019.12.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  • Improving of dry-spinnability of carbon nanotube arrays by Fe-Gd catalyst International conference

    Tomohiro Nakagawa, Hirotaka Inoue, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi

    OptoX-NANO 2019  2019.12 

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    Event date: 2019.12.2 - 2019.12.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  • Development of flexible supercapacitor using highly aligned carbon nanotube sheet

    Tatsuki Marui, Hirotaka Inoue, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi

    OptoX-NANO 2019  2019.12 

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    Event date: 2019.12.2 - 2019.12.5

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  • Improving of dry-spinnability of carbon nanotube arrays by Fe-Gd catalyst

    Tomohiro Nakagawa, Hirotaka Inoue, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi

    OptoX-NANO 2019  2019.12 

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  • Dry-drawable few-walled carbon nanotube forest synthesized by chemical vapor deposition

    Hirotaka Inoue, Tomohiro Nakagawa, Masaki Hada, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi

    OptoX-NANO 2019  2019.12 

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    Event date: 2019.12.2 - 2019.12.5

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  • Fe-Gd触媒による紡績性カーボンナノチューブアレイの長尺・高密度化

    中川智広,井上寛隆,西川亘,山下善文,林靖彦

    第46回炭素材料学会年会  2019.11 

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    Event date: 2019.11.28 - 2019.11.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • ポストテンショニング処理によるカーボンナノチューブ紡績糸の高強度化

    井上寛隆,中川智広,羽田真毅,西川亘,山下善文,林靖彦

    第46回炭素材料学会年会  2019.11 

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    Event date: 2019.11.28 - 2019.11.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Fe-Gd触媒による紡績性カーボンナノチューブアレイの長尺・高密度化

    中川智広,井上寛隆,西川亘,山下善文,林靖彦

    第46回炭素材料学会年会  2019.11 

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    Event date: 2019.11.28 - 2019.11.30

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  • ポストテンショニング処理によるカーボンナノチューブ紡績糸の高強度化

    井上寛隆,中川智広,羽田真毅,西川亘,山下善文,林靖彦

    第46回炭素材料学会年会  2019.11 

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  • カーボンナノチューブ紡績糸へのドーピングと熱電特性における通電加熱処理の効果

    家元 章伍,大元 一輝,井上 寛隆, 羽田 真毅,西川 亘,山下 善文,林 靖彦

    2019年 第6回 ZAIKEN フェスタ  2019.10.3 

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    Event date: 2019.10.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 細径かつ紡績可能なカーボンナノチューブアレイ合成におけるアレイ高さ・嵩密度の重要性

    井上寛隆,中川智広,羽田真毅,西川亘,山下善文,林靖彦

    2019年 第6回 ZAIKEN フェスタ  2019.10.3 

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    Event date: 2019.10.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • カーボンナノチューブ紡績糸へのドーピングと熱電特性における通電加熱処理の効果

    家元 章伍,大元 一輝,井上 寛隆, 羽田 真毅,西川 亘,山下 善文,林 靖彦

    2019年 第6回 ZAIKEN フェスタ  2019.10.3 

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    Event date: 2019.10.3

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  • 細径かつ紡績可能なカーボンナノチューブアレイ合成におけるアレイ高さ・嵩密度の重要性

    井上寛隆,中川智広,羽田真毅,西川亘,山下善文,林靖彦

    2019年 第6回 ZAIKEN フェスタ  2019.10.3 

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    Event date: 2019.10.3

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  • 水分子衝突によるCH3NH3PbI3劣化反応の温度依存性

    長岡瞭太,長谷川陽一,三島颯司,羽田真毅,太田弘道,西川亘,山下善文,鶴田健二,林靖彦

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • ナノ・マクロ視点から見たCNT シートの界面でのエネルギー輸送

    羽田真毅,牧野孝太郎,長谷川太祐,井上寛隆,大元一輝,西川亘,山下善文,林靖彦,腰原伸也,前田理,長谷宗明

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 機械学習による紡績可能カーボンナノチューブアレイの合成条件最適化

    井上寛隆,中川智広,西川亘,山下善文,林靖彦

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • ナノ・マクロ視点から見たCNT シートの界面でのエネルギー輸送

    羽田真毅,牧野孝太郎,長谷川太祐,井上寛隆,大元一輝,西川亘,山下善文,林靖彦,腰原伸也,前田理,長谷宗明

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9.18 - 2019.9.21

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  • 機械学習による紡績可能カーボンナノチューブアレイの合成条件最適化

    井上寛隆,中川智広,西川亘,山下善文,林靖彦

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9.18 - 2019.9.21

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  • 水分子衝突によるCH3NH3PbI3劣化反応の温度依存性

    長岡瞭太,長谷川陽一,三島颯司,羽田真毅,太田弘道,西川亘,山下善文,鶴田健二,林靖彦

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9.18 - 2019.9.21

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  • Synthesis condition of CNT arrays for fabricating the double-walled carbon nanotube yarns by dry-spinning International conference

    Hirotaka Inoue, Tomohiro Nakagawa, Paneer Selvam Karthik, Masaki Hada, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2019.7 

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    Event date: 2019.7.21 - 2019.7.26

    Language:English  

    Country:Japan  

  • Enhancement of carbon nanotube yarn based thermoelectric properties by interfacial graphene like layers converted from residual amorphous carbon International conference

    Kazuki Omoto, Hirotaka Inoue, Shogo Iemoto, Masaki Hada, Taisuke Hasegawa, Takeshi Nishikawa, Yoshifumi Yamashita, Satoshi Maeda, Yasuhiko Hayashi

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2019.7 

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    Event date: 2019.7.21 - 2019.7.26

    Language:English  

    Country:Japan  

  • Enhancement of carbon nanotube yarn based thermoelectric properties by interfacial graphene like layers converted from residual amorphous carbon

    Kazuki Omoto, Hirotaka Inoue, Shogo Iemoto, Masaki Hada, Taisuke Hasegawa, Takeshi Nishikawa, Yoshifumi Yamashita, Satoshi Maeda, Yasuhiko Hayashi

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2019.7 

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    Event date: 2019.7.21 - 2019.7.26

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  • Synthesis condition of CNT arrays for fabricating the double-walled carbon nanotube yarns by dry-spinning

    Hirotaka Inoue, Tomohiro Nakagawa, Paneer Selvam Karthik, Masaki Hada, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2019.7 

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    Event date: 2019.7.21 - 2019.7.26

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  • 紫外線照射によるアモルファスH2Oの光解離過程の直接観測

    重枝勇歩,羽田真毅,腰原信也,西川亘,山下善文,林靖彦

    2019年度応用物理・物理系学会中国四国支部合同学術講演会  2019.7.21 

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    Event date: 2019.7.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 鉛ハライドペロブスカイトの結晶成長機構の解明

    三島颯司,羽田真毅,林靖彦,宮田潔志,長岡瞭太,太田弘道,西川亘,山下善文,恩田健

    2019年度応用物理・物理系学会中国四国支部合同学術講演会  2019.7.21 

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    Event date: 2019.7.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 多結晶Si中の粒界上Ni関連準位の逆バイアス印加による消滅過程

    安田佳史,山下善文,西川亘,羽田真毅,林靖彦

    2019年度応用物理・物理系学会中国四国支部合同学術講演会  2019.7.21 

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    Event date: 2019.7.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 高配向CNTシートを電極としたフレキシブルスーパーキャパシタの低抵抗化

    丸井竜輝,羽田真毅,西川亘,山下善文,林靖彦

    2019年度応用物理・物理系学会中国四国支部合同学術講演会  2019.7.21 

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    Event date: 2019.7.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 多結晶Si中の粒界上Ni関連準位の逆バイアス印加による消滅過程

    安田佳史,山下善文,西川亘,羽田真毅,林靖彦

    2019年度応用物理・物理系学会中国四国支部合同学術講演会  2019.7.21 

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    Event date: 2019.7.21

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  • 高配向CNTシートを電極としたフレキシブルスーパーキャパシタの低抵抗化

    丸井竜輝,羽田真毅,西川亘,山下善文,林靖彦

    2019年度応用物理・物理系学会中国四国支部合同学術講演会  2019.7.21 

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    Event date: 2019.7.21

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  • 紫外線照射によるアモルファスH2Oの光解離過程の直接観測

    重枝勇歩,羽田真毅,腰原信也,西川亘,山下善文,林靖彦

    2019年度応用物理・物理系学会中国四国支部合同学術講演会  2019.7.21 

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    Event date: 2019.7.21

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  • 鉛ハライドペロブスカイトの結晶成長機構の解明

    三島颯司,羽田真毅,林靖彦,宮田潔志,長岡瞭太,太田弘道,西川亘,山下善文,恩田健

    2019年度応用物理・物理系学会中国四国支部合同学術講演会  2019.7.21 

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  • CNTシートを用いた混錬物フリーなフレキシブルスーパーキャパシタの開発

    丸井竜輝,羽田真毅,西川亘,山下善文,林靖彦

    ナノファイバー学会第9回年次大会  2019.7.1 

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    Event date: 2019.7.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • CNTシートを用いた混錬物フリーなフレキシブルスーパーキャパシタの開発

    丸井竜輝,羽田真毅,西川亘,山下善文,林靖彦

    ナノファイバー学会第9回年次大会  2019.7.1 

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  • 基板改質による乾式紡績可能なチューブ径の細いカーボンナノチューブ・アレイの合成

    中川智広,井上寛隆,羽田真毅,西川亘,山下善文,林靖彦

    令和元年度日本表面真空学会九州支部学術講演会  2019.6.1 

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    Event date: 2019.6.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 基板改質による乾式紡績可能なチューブ径の細いカーボンナノチューブ・アレイの合成

    中川智広,井上寛隆,羽田真毅,西川亘,山下善文,林靖彦

    令和元年度日本表面真空学会九州支部学術講演会  2019.6.1 

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  • Drawable carbon nanotube arrays: required density and height International conference

    Hirotaka Inoue, Tomohiro Nakagawa, Masaki Hada, Takeshi Nishikawa, Yoshifumi Yamashita and Yasuhiko Hayashi

    11th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials  2019.3 

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    Event date: 2019.3.17 - 2019.3.21

    Language:English  

    Country:Japan  

  • Drawable carbon nanotube arrays: required density and height

    Hirotaka Inoue, Tomohiro Nakagawa, Masaki Hada, Takeshi Nishikawa, Yoshifumi Yamashita and Yasuhiko Hayashi

    11th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials  2019.3 

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    Event date: 2019.3.17 - 2019.3.21

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  • 複線撚りカーボンナノチューブ紡績糸中に残留するアモルファスカーボンの通電加熱処理による構造変化

    家元章伍,中川智広,井上寛隆,羽田真毅,西川亘,山下善文,林靖彦

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 紡績可能な細径CNT 合成に向けた初期成長時の触媒粒子径制御

    井上寛隆,中川智広,羽田真毅,西川亘,山下善文,林靖彦

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 真空中通電加熱処理による乾式CNT紡績糸熱電変換素子の物性向上

    大元一輝,井上寛隆,羽田真毅,西川亘,山下善文,林靖彦

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 細径で紡績可能なカーボンナノチューブ一本の機械強度特性

    吉山貴之,井上寛隆,白須圭一,羽田真毅,西川亘,山下善文,橋田俊之,林靖彦

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 複線撚りカーボンナノチューブ紡績糸中に残留するアモルファスカーボンの通電加熱処理による構造変化

    家元章伍,中川智広,井上寛隆,羽田真毅,西川亘,山下善文,林靖彦

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3.9 - 2019.3.12

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  • 細径で紡績可能なカーボンナノチューブ一本の機械強度特性

    吉山貴之,井上寛隆,白須圭一,羽田真毅,西川亘,山下善文,橋田俊之,林靖彦

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3.9 - 2019.3.12

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  • 真空中通電加熱処理による乾式CNT紡績糸熱電変換素子の物性向上

    大元一輝,井上寛隆,羽田真毅,西川亘,山下善文,林靖彦

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3.9 - 2019.3.12

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  • 紡績可能な細径CNT 合成に向けた初期成長時の触媒粒子径制御

    井上寛隆,中川智広,羽田真毅,西川亘,山下善文,林靖彦

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3.9 - 2019.3.12

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  • Effects of remote hydrogen-plasma treatment on electrical properties of β-Ga2O3 International conference

    Nobuchika Nagai, Toshiki Tanaka, Yoshifumi Yamashita, Masaki Hada, Takeshi Nishikawa, Yasuhiko Hayashi

    The 8th Forum on the Science and Technology of Silicon Materials 2018  2018.11.19 

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    Event date: 2018.11.18 - 2018.11.21

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  • Reverse-bias effects of metal-related levels in mc-Si for solar cells studied by isothermal DLTS International conference

    Kiichiro Tagawa, Yuta Miyabe, Keishi Yasuda, Yoshifumi Yamashita, Takeshi Nishikawa, Masaki Hada, Yasuhiko Hayashi

    The 8th Forum on the Science and Technology of Silicon Materials 2018  2018.11.19 

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    Event date: 2018.11.18 - 2018.11.21

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  • 時間分解電子線回折法を用いたEuBaCo2O5.38の構造ダイナミクス計測

    羽田 真毅, 鈴木 達也, 阿部 伸行, 有馬 孝尚, 沖本 洋一, 腰原 伸也, 慶尾 直哉, 村上 寛虎, 西川 亘, 山下 善文, 林 靖彦, 横谷 尚睦, 松尾 二郎, 浅香 透

    日本物理学会講演概要集  2017.1  一般社団法人 日本物理学会

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  • 10aAE-4 Threading dislocation motion in Sb-doped SiGe thin films with various Ge content

    Yamashita Yoshifumi, Maki Shinya, Fushimi Tatsuya, Ohno Yutaka, Yonenaga Ichiro, Nishikawa Takeshi, Hayashi Yasuhiko

    Meeting abstracts of the Physical Society of Japan  2014.8.22  The Physical Society of Japan (JPS)

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    Event date: 2014.8.22

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  • 28pAM-12 Partial dislocation motion in 4H-SiC with/without electron beam irradiation

    Yamashita Yoshifumi, Shimomura Takuya, Fujii Yuji, Nishikawa Takeshi, Hayashi Yasuhiko

    Meeting abstracts of the Physical Society of Japan  2014.3.5  The Physical Society of Japan (JPS)

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    Event date: 2014.3.5

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  • 24pCD-7 Effects of Sb doping on dislocation motion in SiGe thin films on Si substrate

    Yamashita Yoshifumi, Funaki Toru, Matsunaga Takuya, Tanemoto Kan, Fushimi Tatsuya, Kamiura Yoichi, Ishiyama Takeshi

    Meeting abstracts of the Physical Society of Japan  2012.3.5  The Physical Society of Japan (JPS)

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    Event date: 2012.3.5

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  • Si quantum wells by thermal oxidation and Er-doped structures

    OSAKI Ryusuke, ISHIKAWA Yasuhiko, YAMASHITA Yoshifumi, KAMIURA Yoichi, WADA Kazumi

    IEICE technical report  2008.12.12  The Institute of Electronics, Information and Communication Engineers

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    Event date: 2008.12.12

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    Er-doped Si has attracted much attention as a possible candidate for 1.5μm light-emitting material in silicon photonics. However, there has been a problem of the strong luminescence quenching toward higher temperatures. In this work, we propose a method for effective light emition from Er-doped Si using quantum well structures. The fabrication process using thermal oxidation of silicon-on-insulator (SOI) later is also described.

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  • 21pYM-1 Energy change due to uniaxial stress for the Pt-H_2 defect in Si

    Sato Kimihiro, Kamiura Yoichi, Yamashita Yoshifumi, Ishiyama Takeshi

    Meeting abstracts of the Physical Society of Japan  2005.8.19  The Physical Society of Japan (JPS)

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    Event date: 2005.8.19

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  • 21pYM-3 Hydrogen Enhanced Strain Relaxation of a GeSi film on Ge Substrate

    Yamashita Y., Nakagawa R., Sakamoto Y., Dewa T., Ishiyama T., Kamiura Y.

    Meeting abstracts of the Physical Society of Japan  2005.8.19  The Physical Society of Japan (JPS)

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    Event date: 2005.8.19

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  • 27aYM-5 Enhancing effect of strain on photoluminescence of Er in Si and SiGe layers

    Ishiyama T., Kamiura Y., Yoneyama S., Yamashita Y.

    Meeting abstracts of the Physical Society of Japan  2005.3.4  The Physical Society of Japan (JPS)

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    Event date: 2005.3.4

    Language:Japanese  

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  • 15aTJ-7 Relaxation Process of Stress-induced Reorientation of Pt-H_2 Defect in Si (I)

    Namula Bao, Sato K., Kamiura Y., Yamashita Y., Ishiyama T.

    Meeting abstracts of the Physical Society of Japan  2004.8.25  The Physical Society of Japan (JPS)

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    Event date: 2004.8.25

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  • Effects of hydrogen treatment on electric property of SiGe films on p-Si substrate

    Yamashita Y., Miyasako T., Ishiyama T., Kamiura Y.

    Meeting abstracts of the Physical Society of Japan  2003.8.15  The Physical Society of Japan (JPS)

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    Event date: 2003.8.15

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  • Effects of Hydrogen on Boron Motion in p-Si substrate and SiGe epi-films

    Yamashita Y., Miyasako T., Toshiyuki T., Kamiura Y., Ishiyama T.

    Meeting abstracts of the Physical Society of Japan  2003.3.6  The Physical Society of Japan (JPS)

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    Event date: 2003.3.6

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  • Symmetry of the Pt-H2 complex and the local motion of H around Pt in Si

    Kamiura Y., Iwagami Y., Yamashita Y., Ishiyama T., Tokuda Y.

    Meeting abstracts of the Physical Society of Japan  2002.8.13  The Physical Society of Japan (JPS)

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    Event date: 2002.8.13

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  • Structure and electronic state of a defect related to platinum and hydrogen in silicon

    Fukuda K., Iwagami Y., Kamiura Y., Yamashita Y., Ishiyama T.

    Meeting abstracts of the Physical Society of Japan  2001.9.3  The Physical Society of Japan (JPS)

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    Event date: 2001.9.3

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  • Enhancing Effects of Hydrogen on Recovery of Implantation-Induced Defects by Phosphorus Ion in Silicon

    Kamiura Y., Yamashita Y., Yamamoto Y., Ishiyama T.

    Meeting abstracts of the Physical Society of Japan  2001.3.9  The Physical Society of Japan (JPS)

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    Event date: 2001.3.9

    Language:Japanese  

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  • Effect of Uniaxial Stress on the Electronic State of the H-C complex in Silicon

    Fukuda K., Kamiura Y., Yamashita Y., Ishiyama T.

    Meeting abstracts of the Physical Society of Japan  2000.3.10  The Physical Society of Japan (JPS)

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    Event date: 2000.3.10

    Language:Japanese  

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  • Effects of Electronic Excitation on the Dissociation of the Mg-H Complex in GaN

    KAMIURA Y., YAMASHITA Y., NAKAMURA S.

    Meeting abstracts of the Physical Society of Japan  1998.9.5  The Physical Society of Japan (JPS)

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    Event date: 1998.9.5

    Language:Japanese  

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  • 8p-S-2 Annihilation Process of Thermal Donors in Silicon

    Kamiura Y., Takeuchi Y., Yamashita Y.

    Meeting abstracts of the Physical Society of Japan  1997.9.16  The Physical Society of Japan (JPS)

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    Event date: 1997.9.16

    Language:Japanese  

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  • 28a-P-8 The spatial variation of STM tunneling current noise

    Tukita S, Uota M, Yamashita Y, Uchida K, Mera Y, Maeda K

    Abstracts of the meeting of the Physical Society of Japan. Annual meeting  1994.3.16  The Physical Society of Japan (JPS)

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    Event date: 1994.3.16

    Language:Japanese  

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  • 14p-DH-4 The origin of 1/f fluctuations in STM tunneling current.

    Sugita S., Uchida S., Hinomaru M., Uota M., Yamashita Y., Mera Y., Maeda K.

    Abstracts of the meeting of the Physical Society of Japan. Sectional meeting  1993.9.20  The Physical Society of Japan (JPS)

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    Event date: 1993.9.20

    Language:Japanese  

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  • 30a-D-5 Line Tension Effects on Dislocation Motion in Hetero-Epitaxial Thin Films of Semiconductors

    Yamashita Y., Mera Y., Maeda Y.

    Abstracts of the meeting of the Physical Society of Japan. Annual meeting  1993.3.16  The Physical Society of Japan (JPS)

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    Event date: 1993.3.16

    Language:Japanese  

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  • 28p-K-10 Glide Velocity of Dislocations in Heteroepitaxial Thin Films

    Yamashita Y., Maeda K., Mera Y., Yaguchi H., Shiraki Y.

    1991.9.12  The Physical Society of Japan (JPS)

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    Event date: 1991.9.12

    Language:Japanese  

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  • 2a-Z-8 Motion of Dislocations in Heteroepitaxial Films

    Yamashita Y, Mera Y, Maeda K

    1990.9.12  The Physical Society of Japan (JPS)

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    Event date: 1990.9.12

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  • Effect of Electron Beam Irradiation on Kink Migration

    Yamashita Y., Mera Y., Maeda K.

    1990.3.16  The Physical Society of Japan (JPS)

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    Event date: 1990.3.16

    Language:Japanese  

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  • 水分子衝突によるCH3NH3PbI3結晶の分解反応に関する研究

    第65回応用物理学会春季学術講演会  2018 

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  • エネルギー輸送の違いから見たカーボンナノチューブの通電加熱の効果

    第65回応用物理学会春季学術講演会  2018 

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  • 乾式カーボンナノチューブ紡績糸を用いたフレキシブル熱電変換素子の物性制御

    2018年度応用物理・物理系学会中国四国支部合同学術講演会  2018 

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  • 酸化モリブデン塗布によるカーボンナノチューブ紡績糸の導電率向上

    第65回応用物理学会春季学術講演会  2018 

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  • 光還元を利用した酸化グラフェンの構造推定と還元ダイナミクスの解明

    第65回応用物理学会春季学術講演会  2018 

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  • 高分子線材/CNT紡績糸マルチフィラメント・ソフトアクチュエータの開発

    第65回応用物理学会春季学術講演会  2018 

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  • CNT紡績糸を用いた線状スーパーキャパシタのMoO3による静電容量向上

    第65回応用物理学会春季学術講演会  2018 

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  • 水分子衝突による有機無機ハイブリッドペロブスカイト材料の劣化反応メカニズム

    2018年度応用物理・物理系学会中国四国支部合同学術講演会  2018 

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  • 高紡績性CNT合成に向けた合成温度条件とアレイ密度の制御

    2018年度応用物理・物理系学会中国四国支部合同学術講演会  2018 

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  • EuBaCo2O5.38の光励起酸素輸送ダイナミクス

    第65回応用物理学会春季学術講演会  2018 

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  • mc-Si中の金属関連準位に対する水素処理の影響

    2018年度応用物理・物理系学会中国四国支部合同学術講演会  2018 

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  • 加熱処理によるCNT紡績糸の熱物性制御

    2018年度応用物理・物理系学会中国四国支部合同学術講演会  2018 

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  • MoO3の浸漬塗布によるCNT紡績糸線状スーパーキャパシタの静電容量向上

    2018年度応用物理・物理系学会中国四国支部合同学術講演会  2018 

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  • β-Ga2O3の電気特性に対するリモート水素プラズマ処理の効果

    2018年度応用物理学会中国四国支部若手半導体研究会  2018 

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  • mc-Si中の粒界上金属関連準位に対する水素処理の効果

    2018年度応用物理学会中国四国支部若手半導体研究会  2018 

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  • β-Ga2O3に対するリモート水素プラズマ処理の影響

    2018年度応用物理・物理系学会中国四国支部合同学術講演会  2018 

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  • ポリジアセチレンの熱・光誘起による相転移とそれに伴う構造変化

    2018年度応用物理・物理系学会中国四国支部合同学術講演会  2018 

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  • 4H-SiC中積層欠陥収縮速度の熱処理温度依存性

    第79回応用物理学会秋季学術講演会  2018 

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  • 化学気相成長法を用いたCNT合成における合成温度条件がアレイ密度と紡績性に及ぼす影響

    第79回応用物理学会秋季学術講演会  2018 

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  • ウエットプロセスによりMoO3を複合化したCNT紡績糸スーパーキャパシタの特性向上

    第79回応用物理学会秋季学術講演会  2018 

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  • 水蒸気雰囲気中ヨウ化鉛メチルアンモニウム薄膜の劣化機構解明

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • Direct observation of atomic of graphene oxide under ultraviolet photoecitation

    OptoX-NANO  2017 

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  • 超高速時間分解電子線回折から見たEuBaCo2O5.38の構造ダイナミクス

    第78回応用物理学会秋季学術講演会  2017 

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  • CNT紡績糸の特性向上を目指したカーボンナノチューブの層数とチューブ径制御

    第78回応用物理学会秋季学術講演会  2017 

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  • Expansion of Shockley Stacking Fault Observed by Scanning Electron Microscope and Partial Dislocation Motion in 4H-SiC

    第29回半導体中の欠陥に関する国際会議  2017 

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  • Study on instability of Ni-related level in mc-Si under electric field by isothermal-DLTS

    第29回半導体中の欠陥に関する国際会議  2017 

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  • Structural dynamics of EuBaCo2O5.38 by ultlafast time resolved electron diffraction

    OptoX-NANO  2017 

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  • Controlling wall-number and tube-diameter of carbon nanotubes for improvement characteristic of CNT yarns

    OptoX-NANO  2017 

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  • 巨大グレインMAPbI3-xClx薄膜の作製と評価

    第78回応用物理学会秋季学術講演会  2017 

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  • 時間分解電子線回折法を用いたEuBaCo2O5.38の構造ダイナミクス計測

    日本物理学会2017年秋季大会  2017 

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  • SbドープSiGe/Siの抵抗率分布に対するリモート水素プラズマ処理の影響

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • リモート水素プラズマを用いたカーボンナノチューブの特性向上

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • 走査電子顕微鏡を用いた4H-SiC中積層欠陥の収縮挙動の研究

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • 拡がり抵抗測定をSiGe/Siに適用する際の抵抗率・キャリア密度変換法の検討

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • 有機溶媒分散による天然黒鉛のマイクロスケール・グラフェン化の試み

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • 酸化グラフェンの光励起下における原子運動の直接観察

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • バイアス印加処理したカーボンナノチューブ紡績糸の電気・機械特性

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • 化学気相成長中の昇温最適化によるカーボンナノチューブの層数とチューブ径制御

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • ソーラーセル用多結晶Si中のCu準位に対する逆バイアス効果

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • mc-Si中Ni関連準位の逆バイアス下での消滅機構

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • 走査電子顕微鏡プローブビームによる電子線照射下での4H-SiC中の部分転位運動

    2017年第64回応用物理学会春季学術講演会  2017 

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  • IT-DLTS法を用いた mc-Si中Ni関連準位の電界印加による消滅機構の研究

    2017年第64回応用物理学会春季学術講演会  2017 

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  • 超高速時間分解電子線回折装置によるEuBaCo2O5.38の構造ダイナミクス

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • 巨大グレインMAPbI3-xClx薄膜の作製

    2017年度応用物理・物理系学会中国四国支部合同学術講演会  2017 

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  • カーボンナノチュブ紡績糸を用いた軽量・高応答人工筋肉の研究開発

    2017年第64回応用物理学会春季学術講演会  2017 

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  • カーボンナノチューブの層数とチューブ径制御

    ナノファイバー学会第8回年次大会  2017 

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  • 半導体中の転位運動に対するドーピング効果研究のためのSiGe エピ膜の作製と評価

    2016年度応用物理学会中国四国支部若手半導体研究会  2016 

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  • 4-ニトロベンゼンジアゾニウムテトラフルオロボラートによるカーボン ナノチューブ・ファイバの電気的特性改善

    2016年第63回応用物理学会春季学術講演会  2016 

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  • SEMプローブビーム照射下での4H-SiC中部分転位の運動速度

    2016年度応用物理学会中国四国支部若手半導体研究会  2016 

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  • 有機無ハイブリッド太陽電池におけるペロスカト層の作製条件の最適化

    第63回応用物理学会春季学術講演会  2016 

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  • 長尺・高密度・垂直配向カーボンナノチューブの紡績性

    2016年度応用物理・物理系学会中国四国支部合同学術講演会  2016 

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  • 鉛ハライドペロブスカイト化合物の光劣化ダイナミクス

    2016年度応用物理・物理系学会中国四国支部合同学術講演会  2016 

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  • 電子線照射で導入した4H-SiC中積層欠陥の形状と熱処理による収縮

    2016年度応用物理・物理系学会中国四国支部合同学術講演会  2016 

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  • IT-DLTS測定法を用いた太陽電池用多結晶Si中Ni関連電子準位の逆バイアス印加による消滅機構の研究

    2016年度応用物理学会中国四国支部若手半導体研究会  2016 

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  • スクラッチから拡大した4H-SiC 中積層欠陥の熱処理による収縮挙動

    2016年度応用物理学会中国四国支部若手半導体研究会  2016 

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  • 太陽電池用多結晶シリコン中Ni関連準位の電界印加による消滅の機構

    2016年度応用物理・物理系学会中国四国支部合同学術講演会  2016 

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  • ペロブスカイト太陽電池の作製と光劣化プロセス解析

    2016年度応用物理・物理系学会中国四国支部合同学術講演会  2016 

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  • 走査電子顕微鏡による電子線照射で促進された4H-SiC中 部分転位の運動速度

    2016年度応用物理・物理系学会中国四国支部合同学術講演会  2016 

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  • SiGeエピ膜貫通転位運動のSbドープによる促進効果の機構

    2016年度応用物理・物理系学会中国四国支部合同学術講演会  2016 

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  • 4-ニトロベンゼンジアゾニウムテトラフルオロボラートがカーボンナノチューブ・ファイバーの電気的特性に及ぼす影響

    2016年度応用物理・物理系学会中国四国支部合同学術講演会  2016 

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  • 炭化水素ガス流量によるカーボンナノチューブの層数変化

    2016年度応用物理・物理系学会中国四国支部合同学術講演会  2016 

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  • 2層カーボンナノチューブからなる紡績糸の機械強度特性評価

    2016年第77回応用物理学会秋季学術講演会  2016 

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  • 鉛ハライドペロブスカイト太陽電池の光劣化ダイナミクス

    2016年第77回応用物理学会秋季学術講演会  2016 

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  • 微小空間に閉じ込め加熱された金属の挙動解析

    2015年第62回応用物理学会春季学術講演会  2015 

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  • 電子線照射により拡大した積層欠陥の縮小に伴う4H-SiCエピ膜中部分転位の運動

    日本物理学会第70回年次大会  2015 

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  • 金属ナノインクによるカーボンナノチューブ紡績糸の高導電率化

    2015年第62回応用物理学会春季学術講演会  2015 

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  • 積層欠陥の拡大収縮にともなう4H-SiC中部分転位の運動

    2014年第75回応用物理学会秋季学術講演会  2014 

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  • 電子線照射下および暗黒下における4H-SiC中部分転位の運動

    日本物理学会第69回年次大会  2014 

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  • Ge濃度の異なるSbドープSiGe薄膜中の貫通転位運動

    日本物理学会2014年秋季大会  2014 

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  • 種々のSbドープSiGeエピタキシャル膜中の転位運動

    2014年第61回応用物理学会春季学術講演会  2014 

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  • ソーラーセル用mc-Si中の不純物準位の安定性に対する逆バイアス電圧の効果

    2014年第61回応用物理学会春季学術講演会  2014 

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  • Sb-doping effect on the dislocation motion in various Si1-xGex films

    The Forum on the Sicience and Technology of Si Materials 2014  2014 

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  • Effects of electric field on the stability of impurity levels on a grain boundary in mc-Si for solar cells

    The Forum on the Sicience and Technology of Si Materials 2014  2014 

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  • 4H-SiC中の積層欠陥拡大縮小に伴う部分転位の運動速度

    2013年度応用物理学会中国四国支部若手半導体研究会  2013 

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  • SbドープによるSiGe膜中の貫通転位運動促進効果

    2013年度応用物理学会中国四国支部若手半導体研究会  2013 

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  • Symmetry of Pd-H3 Complex Studied by DLTS under Uniaxial Stress

    2013 The Janan Society of Applied Physics and Materials Research Society Joint Symposia  2013 

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  • SbドープによるSi基板上SiGeエピ膜の歪み緩和速度増大効果

    2013年度応用物理学会中国四国支部若手半導体研究会  2013 

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  • ソーラーセル用mc-Si中粒界-不純物準位の逆バイアス印加下での安定性

    2013年度応用物理学会中国四国支部若手半導体研究会  2013 

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  • Effects of Sb-doping on Strain Relaxation of SiGe Film on Si Substrate

    27th Int. Conf. on Defects in Semicodoctors (ICDS27)  2013 

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  • 4H-SiC中の部分転位の運動に関する研究

    2013年度応用物理・物理系学会中国四国支部合同学術講演会  2013 

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  • Si基板上SiGe膜中の貫通転位運動に対するSbドープの効果

    日本物理学会第68回年次大会  2013 

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  • SbドープによるSi基板上SiGeエピタキシャル膜中の貫通転位速度増大効果

    第60回応用物理学会春季学術講演会  2013 

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  • Si基板上SiGe膜の歪み緩和に対するSbドープの影響

    2013年度応用物理・物理系学会中国四国支部合同学術講演会  2013 

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  • ソーラーセル用mc-Si中の不純物準位に対する逆バイアスアニール効果

    2013年度応用物理・物理系学会中国四国支部合同学術講演会  2013 

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  • Si基板上SiGeエピ膜への不純物ドーピング

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2012年度支部学術講演会  2012 

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  • 4H-SiC中の欠陥準位に対するNプラズマ処理の影響

    2012年度応用物理学会中国四国支部若手半導体研究会  2012 

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  • Si基板上SiGe膜の抵抗率深さ分布に対する水素処理の影響

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2012年度支部学術講演会  2012 

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  • 電子スピン共鳴法を用いたSi酸化膜中欠陥のアニール挙動評価

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2012年度支部学術講演会  2012 

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  • DLTS法によるPd-H複合欠陥のアニール挙動の研究

    2012年度応用物理学会中国四国支部若手半導体研究会  2012 

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  • ソーラーセル用多結晶Si中の欠陥準位

    2012年度応用物理学会中国四国支部若手半導体研究会  2012 

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  • 〈110〉応力印加によるDLTSスペクトルの分裂-Si中Pd‐H3複合欠陥の対称性-

    2012年度応用物理学会中国四国支部若手半導体研究会  2012 

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  • SbドープSiGe膜中の貫通転位運動

    2012年度応用物理学会中国四国支部若手半導体研究会  2012 

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  • Si基板上SiGe薄膜へのSbドーピングと転位運動制御

    第17回岡山リサーチパーク研究・展示発表会  2012 

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  • 電子スピン共鳴によるSi酸化膜中のアニール挙動の研究

    2012年度応用物理学会中国四国支部若手半導体研究会  2012 

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  • 転位運動制御による一方向緩和SiGe膜の作製

    2012年度応用物理学会中国四国支部若手半導体研究会  2012 

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  • SiGe薄膜中の貫通転位運動に対するSbドープの影響

    2012年春季 第59回 応用物理学関係連合講演会  2012 

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  • Si基板上SbドープSiGe薄膜中の転位運動

    日本物理学会第67回年次大会  2012 

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  • レーザー励起THz顕微鏡によるSiGeウェハの非破壊検査

    2012年春季 第59回 応用物理学関係連合講演会  2012 

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  • 一軸性応力印加によるSi中Pd-H3欠陥の対称性の研究

    2012年春季 第59回 応用物理学関係連合講演会  2012 

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  • SiGe膜中の貫通転位運動に対するSbドープの影響

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2012年度支部学術講演会  2012 

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  • Dislocation motion in impurity doped SiGe on Si substrate

    European Materials Research Society (E-MRS) 2012 Spring Meeting, Symposium A  2012 

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  • MBE法によるSi基板上SbドープSiGeエピ膜の作製と評価

    2012年度応用物理学会中国四国支部若手半導体研究会  2012 

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  • DLTS法によるソーラーセル用多結晶Si中の欠陥評価

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2012年度支部学術講演会  2012 

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  • 応力印加DLTS法によるSi中Pd-H複合欠陥の対称性の研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2012年度支部学術講演会  2012 

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  • 4H-SiCに対するNプラズマ処理効果のDLTS法による評価

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2012年度支部学術講演会  2012 

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  • Si中Pd-H複合欠陥の電子状態とアニール挙動

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2012年度支部学術講演会  2012 

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  • Si基板上の不純物ドープSiGe膜中の貫通転位速度

    2011年春季 第58回 応用物理学関係連合講演会  2011 

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  • SbドープSiGe膜中の貫通転位運動

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • Si中Pd-H欠陥のアニール挙動

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • 抵抗率分布測定による歪SiGe膜の水素透過特性評価

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • 焼結体ZnOの発光に対する水蒸気プラズマ処理効果

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • 応力印加DLTS法によるSi中Pd-H欠陥の研究

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • エッチピット法を用いた4H-SiC単結晶中の転位運動の研究

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • 薄膜用X線回折装置を用いたSiGe膜緩和状態の評価

    第16回岡山リサーチパーク研究・展示発表会  2011 

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  • SiGe膜中の水素特性と転位運動に関する不純物効果

    第21回格子欠陥フォーラム「格子欠陥が担うエネルギー・環境材料に 関する挑戦課題」  2011 

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  • 電子スピン共鳴法によるSi酸化膜中欠陥のアニール挙動

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • 不純物をドープしたSiGe膜中の貫通転位運動

    第72回応用物理学会学術講演会  2011 

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  • DLTS Study of Pd-H Complexes in Si

    14th International Conference on Defects Recognition, Imaging and Physics in Semiconductors  2011 

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  • 貫通転位運動制御による高速デバイス用歪SiGe膜作製法の開発

    知恵の見本市2011  2011 

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  • Si基板上SiGe薄膜中の転位運動に対する不純物ドープの影響

    日本物理学会2011年秋季大会  2011 

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  • SiGe膜中の貫通転位運動に対する不純物ドープの効果

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • 発光性Er-Si-O化合物欠陥のESRによる研究

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • DLTS法によるSI中Pd-H欠陥のアニール挙動評価

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • 4H-SiC単結晶中の転位運動の研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • 4H-SiC中のZ1/2欠陥密度に対する種々のプラズマ処理効果

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • 酸化亜鉛の発光に対する水蒸気プラズマ効果

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • 薄膜X線回折装置を用いたSiGe膜の歪緩和制御に関する研究

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • 水素および水蒸気プラズマ処理によるInGaNの発光増大

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • 応力印加赤外吸収法によるSi 中白金-重水素複合欠陥の局在振動評価

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • 種々のプラズマ処理による4H-SiC中の欠陥密度変化

    2011年度応用物理学会中国四国支部若手半導体研究会  2011 

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  • 電子スピン共鳴法によるSi酸化膜中欠陥の同定

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • 応力印加DLTS法によるSi中のPd-H複合欠陥の研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • In0.1Ga0.9Nの発光に対するプラズマ処理とアニールの効果

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • 発光性Er-Si-O化合物中欠陥のESRによる研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • SbドープによるSiGe膜中の貫通転位運動促進効果

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • 応力印加赤外吸収法によるSi中白金-重水素複合欠陥の研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • X線回折法を用いたSiGe膜の歪緩和の評価

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2011年度支部学術講演会  2011 

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  • AlGaN発光に対する水蒸気プラズマ処理効果

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • Dislocation motion in B-doped SiGe epifilm on Si substrate

    The Forum on the Sicience and Technology of Si Materials 2010  2010 

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  • BドープSiGe膜中の転位運動-歪みSi用SiGe仮想基板緩和制御の基礎研究

    第15回岡山リサーチパーク研究・展示発表会  2010 

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  • Si基板上に形成したEr-Si-O化合物の発光評価

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • Si中の白金-水素複合欠陥の消滅過程

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • Si中のPd関連複合欠陥のESRによる研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • Si中のPt-Cr複合欠陥のESRによる研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • エッチピット法を用いた6H-SiC中の転位運動の研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • SiGeエピ膜中の転位運動に対するBドープの効果

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • 赤外吸収法を用いたSi中白金-重水素複合欠陥の研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • 水蒸気プラズマ処理した4H-SiC中欠陥準位に対する応力効果

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • ZnO焼結体の発光に対するプラズマ処理効果

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • 応力印加DLTS法によるSi中のPd-H複合欠陥の研究

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • 電子スピン共鳴によるSi酸化膜の欠陥評価

    2010年度応用物理学会中国四国支部若手半導体研究会  2010 

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  • 水素・水蒸気混合プラズマを用いたInGaN発光の増大

    2010年度応用物理学会中国四国支部若手半導体研究会  2010 

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  • Si中のPt-Cr複合欠陥のESRによる研究

    2010年度応用物理学会中国四国支部若手半導体研究会  2010 

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  • 応力印加DLTS法によるSi中のPd-H複合欠陥の研究

    2010年度応用物理学会中国四国支部若手半導体研究会  2010 

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  • 水蒸気プラズマ処理によるInGaN発光の増大

    2010年度応用物理学会中国四国支部若手半導体研究会  2010 

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  • ZnO焼結体の発光に対するプラズマ処理効果

    2010年度応用物理学会中国四国支部若手半導体研究会  2010 

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  • BドープしたSiGeエピ膜中の転位運動

    2010年度応用物理学会中国四国支部若手半導体研究会  2010 

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  • Si基板上に形成したEr-Si-O化合物の発光評価

    2010年度応用物理学会中国四国支部若手半導体研究会  2010 

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  • 電子スピン共鳴によるSi酸化膜の欠陥評価

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • 赤外吸収法によるSi中白金-重水素複合欠陥の研究

    2010年度応用物理学会中国四国支部若手半導体研究会  2010 

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  • Photoluminescence Study of Er-Si-O Compounds

    2nd International Conference on Silicon Photonics  2010 

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  • Enhancing effects of H2O plasma treatment on photoluminescence in GaN-based semiconductors

    3rd International Conference on Silicon Photonics  2010 

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  • Si基板上に形成したEr-Si-O化合物の発光評価

    2010年春季 第57回 応用物理学関係連合講演会  2010 

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  • Effects of Hydrogen and Water-Vapor Plasma Treatments on Luminescence Properties of Polycrystalline ZnO Pellets

    4th International Conference on Silicon Photonics  2010 

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  • 高速デバイス用歪みSiGe膜材料の欠陥制御と電気特性制御

    第14回岡山リサーチパーク研究・展示発表会  2010 

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  • Si中Pd-H複合欠陥の電子スピン共鳴

    2010年春季 第57回 応用物理学関係連合講演会  2010 

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  • 水素のSi基板上SiGeエピ膜透過に対する歪の効果

    2010年春季 第57回 応用物理学関係連合講演会  2010 

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  • ZnO焼結体の発光に対する水素プラズマ処理効果

    2010年春季 第57回 応用物理学関係連合講演会  2010 

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  • InGaN発光へのリモートプラズマ処理の影響

    2010年春季 第57回 応用物理学関係連合講演会  2010 

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  • 145委員会タスクフォースの研究活動について-シリコンリング共振器の発光と水素処理

    日本学術振興会結晶加工と評価技術第145委員会第123回研究会  2010 

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  • 水蒸気プラズマ処理を用いたInGaN発光の増大

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • Si中Pt-H欠陥の局在振動に対する一軸性応力効果II

    日本物理学会2010年年次大会  2010 

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  • Effects of uniaxial stress on local vibration of a platinum-hydrogen complex in silicon

    Europian MRS2010 Spring Meeting Symoposium: I  2010 

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  • 水素・水蒸気混合プラズマを用いたInGaN発光の増大

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部2010年度支部学術講演会  2010 

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  • 4H-SiC中の欠陥準位に対する応力の影響

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • ZnOの発光に対する水蒸気プラズマ処理効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • 水素処理により生じるSiGe/Si中低抵抗部の特性評価

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • 水素プラズマ処理による4H-SiCエピ膜中の欠陥準位の密度変化

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • Si中Erの発光に対する酸素プラズマ処理効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • ErSiO結晶の赤外発光

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • ZnO焼結体の発光と欠陥評価

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • InGaNの発光に対するプラズマ処理効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • Si中Pt-H複合欠陥の局在振動に対する応力効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • Si中のPd-HのDLTSスペクトルに対する応力効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • 赤外吸収法によるSi中のPt-H複合欠陥の熱的挙動の研究

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • ZnOの発光に対する熱処理・水素プラズマ処理効果

    2009年度応用物理学会中国四国支部若手半導体研究会  2009 

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  • 薄膜Si中におけるErの発光

    2009年度応用物理学会中国四国支部若手半導体研究会  2009 

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  • Si中のPd-Cr複合欠陥のESRによる研究

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • プラズマ処理によるGaN系半導体の発光増大

    2009年度応用物理学会中国四国支部若手半導体研究会  2009 

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  • Si中Pd-Cr複合欠陥の構造

    2009年度応用物理学会中国四国支部若手半導体研究会  2009 

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  • ZnOの発光に対する水蒸気プラズマ処理効果

    応用物理学会2009年秋季第70回学術講演会  2009 

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  • Si中Pt-H複合欠陥の局在振動の赤外吸収による研究

    2009年度応用物理学会中国四国支部若手半導体研究会  2009 

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  • Si中Pd-H複合欠陥のDLTS法による評価

    2009年度応用物理学会中国四国支部若手半導体研究会  2009 

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  • Si酸化膜中欠陥の電子スピン共鳴による研究

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • Electron spin resonance of palladium-related defect in silicon

    25th International Conference on Defects in Semiconductors  2009 

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  • Bistable character of a deep level in polycrystalline Si substrate for solar cell

    25th International Conference on Defects in Semiconductors  2009 

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  • Enhancing effect of hydrogen remote plasma treatment on luminescence of ZnO

    25th International Conference on Defects in Semiconductors  2009 

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  • エッチピット法によるSiC(0001)ウエハ中の転位運動の観測

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部 2009年度支部学術講演会  2009 

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  • Luminescence Enhancement in InGaN and ZnO by Water Vapor Remote Plasma Treatment

    13th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors  2009 

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  • 水蒸気プラズマ処理によるInGaNの発光増大

    日本物理学会2009年秋季大会  2009 

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  • 水蒸気プラズマ処理によるInGaNの発光増大

    応用物理学会2009年秋季第70回学術講演会  2009 

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  • Si中Pt-H欠陥の局在振動に対する一軸性応力効果

    日本物理学会2009年秋季大会  2009 

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  • プラズマ処理によるInGaNの発光評価

    応用物理学会多元系機能材料研究会2009年年末講演会  2009 

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  • 拡がり抵抗法で見たSiGe/Si中の水素の挙動

    応用物理学会中学四国支部主催研究会「シリコン結晶中の軽元素の挙動」  2008 

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  • 歪SiGeエピ膜への水素侵入特性I:熱処理特性

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • Si中のPd-H関連欠陥のESRによる研究

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • 赤外吸収によるSi中Pt-H複合欠陥の局在振動の研究

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • InGaNに対する水蒸気プラズマ処理効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • 歪SiGeエピ膜への水素侵入特性II:歪緩和の影響

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • ZnOの発光に対する熱処理・水素プラズマ処理効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • 水素のSiGe膜透過特性に対するミスフィット歪の影響

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  2008 

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  • Photo- and electroluminescence of Er in Si and SiGe layers

    The 5th International Symposium on Advanced Science and Technology of Silicon Materials  2008 

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  • SiGe薄膜中におけるErのElectroluminescence

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • Si薄膜中におけるErの発光増大条件の探索

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • Electron spin resonance study of platinum-manganese complexes in Si

    The 5th International Symposium on Advanced Science and Technology of Silicon Materials  2008 

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  • Hydrogen passivation of Si and Ge rings

    The 5th International Symposium on Advanced Science and Technology of Silicon Materials  2008 

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  • 応力印加DLTS・IRで観測したSi中水素-白金複合欠陥における水素運動

    応用物理学会中学四国支部主催研究会「シリコン結晶中の軽元素の挙動」  2008 

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  • リモート水素プラズマ処理したSiGe/SiのSi基板中低抵抗部の位置と起源

    第55回応用物理学関係連合講演会  2008 

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  • 4H-SiCエピ膜中の欠陥準位に対する水素プラズマ処理の影響

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • Si酸化膜中欠陥のESRによる研究

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • 水素処理で形成されるSiGe/Si中低抵抗部の起源

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2008年度支部学術講演会  2008 

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  • Electron spin resonance study of a platinum–manganese complex in silicon

    Europian Materials Research Society 2008 Spring Meeting  2008 

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  • Si中の白金-水素複合欠陥(2):応力印加赤外線吸収法を用いた応力シフトと配向アニール

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  2007 

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  • Si中のPd関連欠陥のESRによる研究

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  2007 

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  • ZnO多結晶の発光に対する水素プラズマ処理効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  2007 

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  • 水蒸気プラズマ処理によるpn接合型GaNの発光増大

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  2007 

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  • 4H-SiCエピウエハ中の欠陥に対する水素処理効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  2007 

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  • Si中水素-白金複合欠陥の電子準位の応力依存性

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  2007 

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  • Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

    24th International Conference on Defects in Semiconductors  2007 

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  • Enhancement of blue emission from GaN films and diodes by water vapor remote plasma treatment

    24th International Conference on Defects in Semiconductors  2007 

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  • Si中白金-水素欠陥による赤外吸収線の応力分裂と応力配向

    第54回応用物理学関係連合講演会  2007 

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  • Observation of photo- and electro-luminescence at 1.54m of Er in strained Si and SiGe

    Europian Materials Research Society 2007 Spring Meeting  2007 

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  • The electronic states of platinum-hydrogen defects and hydrogen motion in Si observed by DLTS and IR techniques under uniaxial stress

    The Forum on the Science and Technology of Silicon Materials  2007 

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  • Si,SiGe薄膜中における希土類Erの発光特性

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  2007 

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  • 水蒸気プラズマ処理による GaNの発光増大

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  2007 

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  • 応力印加IRで観測したSi中白金-水素複合欠陥の応力効果

    第68回応用物理学会学術講演会  2007 

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  • Effects of hydrogen on resistivity depth profile of SiGe/p-Si detected by spreading resistance method

    The Forum on the Science and Technology of Silicon Materials  2007 

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  • Er-doped SiGeの発光に対する圧縮歪の影響

    第68回応用物理学会学術講演会  2007 

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  • 水素処理によりSiGe/Si界面付近に形成される低抵抗部の熱的安定性

    第68回応用物理学会学術講演会  2007 

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  • 水蒸気プラズマによるGaNの発光増大

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会  2006 

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  • 水素のSi基板上歪緩和SiGeエピ膜透過特性

    2006年春季第53回応用物理学関係連合講演会  2006 

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  • Si中Pt-H2欠陥の配向回復過程における水素運動の活性化エネルギー

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会  2006 

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  • Si, SiGe薄膜中におけるErのElectroluminescence

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会  2006 

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  • GaN系半導体膜の発光に対する水蒸気プラズマ処理効果

    2006年春季第53回応用物理学関係連合講演会  2006 

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  • SiGe膜中への水素侵入に対する格子歪の影響

    日本物理学会第61回年次大会  2006 

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  • Si中の白金-水素複合欠陥:応力印加赤外線吸収測定で観測した吸収線の分裂とシフト

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会  2006 

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  • 歪緩和SiGeエピ膜下Si基板中への水素侵入曲線

    第67回応用物理学会学術講演会  2006 

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  • Si中の遷移金属複合欠陥の構造とアニール挙動

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会  2006 

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  • 4H-SiCエピウエハ中の欠陥に対する水素処理効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会  2006 

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  • SiおよびSiGeにドープしたErの発光に対する格子歪の影響

    第67回応用物理学会学術講演会  2006 

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  • Si中の白金近傍における水素の運動:荷電効果と同位元素効果

    第67回応用物理学会学術講演会  2006 

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  • 応力印加IRで観測したSi中白金-水素複合欠陥による吸収線の応力分裂と応力シフト

    第67回応用物理学会学術講演会  2006 

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  • ZnOバルク多結晶の発光に対する熱処理効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会  2006 

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  • 半導体エピタキシャル薄膜中の転位運動に対する電子線照射の効果

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会  2006 

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  • Ge基板上SiGeエピ膜の歪み緩和に対する水素プラズマ処理の影響

    第52回応用物理学関係連合講演会  2005 

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  • Si中の白金近傍における水素の運動

    日本物理学会2005年秋季大会  2005 

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  • 一軸性応力によるSi中Pt-H2欠陥のエネルギー変化

    日本物理学会2005年秋季大会  2005 

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  • 水素によるGe基板上GeSi膜の歪み緩和促進効果

    日本物理学会2005年秋季大会  2005 

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  • Si中Pt-Mn複合欠陥の電子スピン共鳴

    第66回応用物理学会学術講演会  2005 

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  • 原子状水素を含むリモートプラズマ処理によるMgドープGaNの青色発光増大

    第66回応用物理学会学術講演会  2005 

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  • Si中Pt-H2複合欠陥の配向整列の応力依存性

    第52回応用物理学関係連合講演会  2005 

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  • Si中のPt-H2欠陥の応力配向緩和過程の荷電効果

    第52回応用物理学関係連合講演会  2005 

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  • 応力によるSi中Erの発光の増大

    日本物理学会第60回年次大会  2005 

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  • Si中の炭素及び白金不純物近傍における水素運動の比較研究

    日本物理学会2004年秋季大会  2004 

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  • SiおよびSiGe中Erの発光に対する歪みの効果

    第65回応用物理学会学術講演会  2004 

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  • Si中Pt-H2欠陥の応力配向緩和過程(I)

    日本物理学会2004年秋季大会  2004 

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  • ひずみSi層にドープしたErの発光特性

    第51回応用物理学関係連合講演会  2004 

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  • 斜め研磨後水素処理したSiGe/Siの基板中に形成される低抵抗部の深さ

    第65回応用物理学会学術講演会  2004 

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  • Si中の白金近傍での水素運動ダイナミクス

    日本物理学会2003年秋季大会  2003 

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  • 水素による半導体中の転位運動促進効果とその機構

    日本物理学会第58回年次大会  2003 

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  • p型Si基板及びSiGeエピ膜中のBの挙動に対する水素の効果

    日本物理学会第58回年次大会  2003 

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  • SiGe層上Si中Erの発光に対する格子歪みの効果

    第50回応用物理学関係連合講演会  2003 

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  • Si中のサーマルドナーの形成・消滅とそれに及ぼす炭素の効果

    第50回応用物理学関係連合講演会  2003 

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  • Si中Pt関連欠陥の電子スピン共鳴

    第64回応用物理学会学術講演会  2003 

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  • p型Si基板上SiGe膜の電気的特性に対する水素処理の効果

    日本物理学会2003年秋季大会  2003 

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  • MBE法により作製したSiGe層上Si中Erの発光特性

    第49回応用物理学関係連合講演会  2002 

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  • Si中のPt-H2複合欠陥の応力配向緩和

    第63回応用物理学会学術講演会  2002 

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  • 光照射下におけるSi中のFeの電子スピン共鳴

    第63回応用物理学会学術講演会  2002 

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  • Si中のPt-H2複合欠陥の対称性とPt近傍での水素の運動

    日本物理学会2002年秋季大会  2002 

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  • Si基板上SiGeエピ膜の電気的特性に及ぼす水素の効果

    第63回応用物理学会学術講演会  2002 

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  • Si中の水素に関連した欠陥準位の応力分裂II

    第49回応用物理学関係連合講演会  2002 

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  • 半導体中の転位運動に対する水素の効果

    文部科学省科学研究費特定領域「電子励起を用いた原子分子操作」第6回研究会  2001 

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  • 高品質SiGeエピ膜作製法の探索

    第5回岡山リサーチパーク合同研究発表会 金属・メカトロ分科会  2001 

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  • Si中の白金と水素に関連した欠陥準位の応力分裂

    第62回応用物理学会学術講演会講演予稿集第1分冊,講演番号12a-R-5,336頁 2002.9.12  2001 

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  • シリコン中の白金-水素関連欠陥の構造と電子準位

    日本物理学会2001年秋の分科会  2001 

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  • 水素によるGe中の転位運動促進効果

    日本物理学会第56回年次大会  2001 

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  • 水素によるSi中Pイオン注入欠陥の回復促進効果

    日本物理学会第56回年次大会  2001 

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  • バルクGe・SiGe薄膜中の転位運動に対する水素の影響

    第61回応用物理学会学術講演会  2000 

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  • Si中のH-C複合欠陥の電子準位に対する一軸性応力効果

    日本物理学会2000年春の分科会  2000 

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  • Si中の水素-炭素複合欠陥準位の応力依存性

    第61回応用物理学会学術講演会  2000 

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  • 注入イオン活性化及び注入損傷回復に及ぼす水素の効果

    第61回応用物理学会学術講演会  2000 

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  • 電子励起によるSi中水素移動の制御

    応用物理学会中国四国支部研究会「電子励起を用いた結晶欠陥制御」  2000 

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  • 多結晶Si薄膜中のErの発光

    第61回応用物理学会学術講演会  2000 

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  • Enhancing Effects of Hydrogen on the Activation of Phosphorus Implanted into Si and on the Recovery of Implantation-Induced Defects

    The 3rd International Symposium on "Advanced Science and Technology of Silicon Materials"  2000 

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  • シリコン中の水素のダイナミックス

    応用物理学会結晶工学分科会第110回研究会  1999 

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  • Si中H-C複合欠陥における水素の内部運動(II)

    日本物理学会第54回年会  1999 

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  • Si中の水素の運動に対する荷電効果と同位元素効果

    第60回応用物理学会学術講演会  1999 

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  • Si中の炭素近傍における水素の局所運動

    第46回応用物理学関係連合講演会  1999 

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  • Si薄膜中におけるErのElectroluminescence

    日本物理学会中国支部・四国支部,応用物理学会中国四国支部,日本物理教育学会中国四国支部2007年度支部学術講演会  0207 

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Awards

  • 第4回応用物理学会講演奨励賞

    1998  

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    Country:Japan

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Research Projects

  • CONTROL OF HYDROGEN DYNAMICS IN SEMICONDUCTORS USING ELECTRONIC

    Grant number:15340099  2003 - 2005

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    KAMIURA Yoichi, YAMASHITA Yoshifumi, ISHIYAMA Takeshi

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    Grant amount:\13300000 ( Direct expense: \13300000 )

    In this research, we have studied the electronic state and atomic configuration of hydrogen-platinum (H-Pt) complex defects in Si, vibrational and rotational motion of hydrogen around the Pt impurity, hydrogen indiffusion into strained SiGe films and the influence of hydrogen on the strain relaxation of SiGe films using isothermal DLTS, IR, ESR and SR techniques, and have obtained the following results.
    1.We have determined the symmetry and structure of H-Pt defects by isothermal DLTS, ESR techniques. We have also studied the stress dependency of defect electronic levels, and have found that defects reorient under uniaxial stress. We have determined the stress coefficient of the energy difference between stable and metastable configurations of defects. In addition, we have studied the effect of charge state on the activation energy for hydrogen local motion around Pt, and have found that hydrogen motion is enhanced when the electronic level of defects is not occupied by an electron.
    2.We have experimentally studied the splitting of IR absorption peaks due to H-Pt defects in Si under uniaxial stress, and have observed a peak at 1880.7 cm^<-1> of the PtH defect and peaks at 1873.1 and 1891.9 cm^<-1> of the PtH_2 defect. The intensity ratios of peaks split under a stress of 0.16 GPa are nearly equal to those predicted by theory.
    3.We have found that hydrogen atoms incorporate more easily into the compressively strained SiGe film on Ge substrate than the tensile strained SiGe film on Si substrate. We have also found that the pre-incorporated hydrogen atoms enhanced the strain relaxation of the SiGe film on Ge during subsequent thermal treatment. Such a result that strain of lattice affects the dynamics of hydrogen is an accomplishment beyond the expectation in the first research project.

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  • 荷電制御による原子操作

    Grant number:11222203  1999 - 2001

    日本学術振興会  科学研究費助成事業  特定領域研究(B)

    上浦 洋一, 末澤 正志, 石山 武, 山下 善文, 望月 康則, 押山 淳

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    Grant amount:\56600000 ( Direct expense: \56600000 )

    本研究は、種々の電子励起効果のうちで、イオン化による荷電状態変化の効果に焦点を絞り、これによる欠陥の生成、局所構造変化、分解、移動など原子移動の機構を実験的・理論的に解明し、それを利用して原子移動を制御することを目的とし、Si, SiO_2,Ge, GaAs, GaN系結晶やデバイス構造中の点欠陥、転位、水素関連欠陥を対象として研究を行い、以下のような知見を得た。
    1.Si中水素炭素複合欠陥の電子準位の応力依存性を測定し、欠陥の圧電定数を決定した。炭素近傍での水素の局所移動の活性化エネルギーと前置因子に対する水素の同位元素効果と荷電効果を明らかにし、その機構を欠陥電子状態のLCAOモデルを用いて研究した。
    2.Si中の水素一白金複合欠陥の対称性と欠陥構造を決定した。白金近傍での水素の局所移動に対する荷電効果を研究し、その効果が炭素近傍での運動とは全く逆であることを明らかにした。
    3.Si中の水素と点欠陥,不純物との複合欠陥を光吸収法により同定し、その性質を研究した。
    4.SiGe層の上に成長したErドープSiエピ膜中でErに関連した中心の発光スペクトルを観測し、その発光強度がSiエピ膜中に内在する引っ張り応力によって増強することを明らかにした。
    5.Si, Ge, GaAs中、Si_<1-x>Ge_x/Siヘテロエピ膜中の転位運動に対する水素の影響を検討した結果、水素が転位の電子状態に影響し、それが運動促進効果の原因となることを明らかにした。
    6.SiO_2中の欠陥の電子状態と構造に対するNドープの効果を理論的に研究した。
    7.GaN中の水素-マグネシウム・ペアーの安定性が高温での水素プラズマ処理により高くなることを見出した。
    8.DRAMの漏れ電流に関係する欠陥を電気的検出磁気共鳴(EDMR)法により研究した。

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  • 半導体中の転位に対する水素誘起転位運動促進効果と歪みエピ膜の緩和制御への応用

    Grant number:10750011  1998 - 1999

    日本学術振興会  科学研究費助成事業  奨励研究(A)

    山下 善文

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    Grant amount:\2100000 ( Direct expense: \2100000 )

    本研究で得られた知見を以下にまとめる。
    1.前年度に行ったp型GaAs中の転位に対する水素誘起転位運動促進効果(HEDG効果)について,さらに実験条件を明らかにした測定を行ったところ,運動促進は転位源(スクラッチ)導入時の残留応力により,見かけ上現れたものであり,水素によるものではないことが確認された。また,n型GaAsでも促進効果は現れなかった。しかしながら,p型Ge中の転位運動については,これまでに知られていたn型Siと同じく,転位速度の活性化エネルギーが減少し,転位運動が促進されることが明らかとなった。
    2.Ge基板上にGe-rich SiGe膜を作製したが,臨界膜厚以上で未緩和の膜を作製することが出来なかった。しかしながら,Si基板上Si-rich SiGe膜で膜厚がこれまでより大きい試料を作製し,転位速度を調べると,水素による転位運動促進効果が現れた。この結果はHEDG効果がある程度長い転位について見られる現象であることを示唆する。この解釈が正しければ,HEDG効果は,水素がキンクの移動障害を実効的に取り除くことにより発現しているというモデルで説明される可能性が高い。GaAsで効果が現れなかったことについても,測定している転位の長さが短いと考えられることから,全く同じ理由で効果が現れなかったと説明できる。
    3.原子状水素を供給しながらSi基板上にSiGe膜を成長させた。その結果,水素を供給しない場合に比べて,緩和が進んでいることが明らかとなった。また,膜の抵抗率分布を調べたところ,膜の抵抗率が減少するという現象が起こっていることも明らかとなった。半導体中の転位速度は電気的特性により変化することが知られており,緩和の促進がHEDG効果によるものか否かは現在のところ判別できないが,後者の現象は予期せぬ新しいものであり,今後の研究が期待される。

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  • 半導体超格子中の転位運動と転位フィルタリングのメカニズム

    Grant number:08750019  1996

    日本学術振興会  科学研究費助成事業  奨励研究(A)

    山下 善文

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    Grant amount:\1000000 ( Direct expense: \1000000 )

    本補助金により購入した温度コントローラ,サイリスタと,トランス,自作のヒーターなどの部品を用いて,試料加熱・制御装置を製作し,現有の真空槽に組み込んだ。この装置により,室温から400℃〜600℃まで約60秒で昇温,この温度範囲で0.2℃の精度で温度制御,約30秒で設定温度から200℃以上降温できることが確認された。この場合,転位速度測定における昇降温時の転位の移動距離は最大でも全移動距離の10%程度と見積もられる。この移動距離の誤差は本補助金にて購入した温度履歴記録解析装置を用いて試料温度の変化を記録し解析することにより補正できる。次に,Si(100)基板上に,各10nmの厚さのSi_<0.8>Ge_<0.2>とSi_<0.6>Ge_<0.4>を交互に7周期成長させた超格子を作製した。この試料は成膜直後に既に多数のミスフィット転位が観察され,成膜中にかなり緩和していた。これは,基板の前処理が不十分であったため,成長初期から導入されていた転位であると考えられる。この試料をスクラッチを入れ新たな転位源を導入し,未緩和分の応力で転位速度測定を試みた。その結果,スクラッチより新たな転位の発生は見られたが,既に存在する転位によるエッチピット(ライン)との判別が難しく,速度の測定はできなかった。この試料の断面透過電子顕微鏡観察をおこなったところ,多数の転位が観察されたが,そのほとんどが全層を貫通する転位であった。従って,この超格子は,各層ではなく超格子全体として転位の掃き出し効果を持つと言える。また,未緩和の試料が作製されれば,超格子全体を貫く転位の運動速度の測定が可能であることが分かった。今後,未緩和の試料の作製が急務であるが,さらに各層厚が臨界膜厚以上の場合に転位形状がどうなるかを調べることが重要であることが分かった。

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  • 半導体中の転位に付随する電子準位の起源と不純物効果

    Grant number:07750016  1995

    日本学術振興会  科学研究費助成事業  奨励研究(A)

    山下 善文

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    Grant amount:\1000000 ( Direct expense: \1000000 )

    本研究では,4点曲げにより,シリコン試料に転位を導入した試料を作成した.これにより,十分に転位が導入された(表面転位密度〜10^8cm^<-2>)試料(4点エッジの中央部),ほとんど無転位の試料(エッジの外の部分)が得られた.このとき,重金属汚染をできるだけ避けるように注意した.また,両者は同じ熱履歴を経ていることが重要である.これらの試料のDLTS測定後,不純物の影響を調べるため銅を拡散させ,再度測定を行った.清浄試料の測定から,変形により158K付近と225K付近(エミッションレート114ms)に新たなピークが現れることが分かった.これらのピークは共に,銅を拡散させた後の測定において強度が増大した.このことは,これらのピークが転位と銅に関係することを意味している.即ち,意図せざる銅汚染があった可能性が大きく,転位が銅にデコレートされ,転位の歪み場により影響を受けた銅による電子準位がのこの2つのピークとして検出されたと考えられる.これらのピークは転位と無関係な他のピークの近くにあり,エネルギーレベルを求めるためには,ピーク分離を行う必要がある.そこで,DLTSの理論関数によるカーブフィッティングによりピーク分離を行った.その結果,これらのピークは単一の電子準位によるピークではないことが分かった.そのためエネルギーレベル等のパラメータは得られなかったが,このことは,前述の考察を支持する結果である.
    さらに,既存の走査型オージェ電子分光装置を改造し,EBIC像観察装置を製作した.しかしながら,観察に適した転位密度の試料を作成できなかったため,得られた像が転位像であると同定することはできなかった.
    以上のように不純物の影響に関する知見は得られたが,現在さらに,適当な転位密度で不純物の影響を極力抑えた試料を作成することにより,転位自身に由来する電子準位の検出を目指している.

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  • 青色発光II-VI族化合物半導体中の転位運動

    Grant number:06750006  1994

    日本学術振興会  科学研究費助成事業  奨励研究(A)

    山下 善文

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    Grant amount:\900000 ( Direct expense: \900000 )

    GaAs(100)基板上にZnSeを臨界膜厚程度の厚さにエピタキシャル成長した試料に,室温においてスクラッチを入れることにより転位を導入し,走査電子顕微鏡を利用したカソードルミネッセンス法(SEM-CL法)により転位を観察した.室温における観察でもわずかに転位が観察できたが,液体窒素フローにより100K程度に冷却することにより,転位の黒色コントラストに改善が見られた.さらに,液体ヘリウムを用いて20K程度まで冷却してみたが,それ以上のコントラストの改善は見られなかった.
    本研究では,青色発光II-VI族半導体であるZnSe中の転位の運動を調べることが目的であるため,観察されている転位がZnSeエピ膜中に存在していることを確認することが重要である.そこで,カソードルミネッセンス光を分光し,GaAs基板とZnSeエピ膜からの信号のそれぞれについて像を観察した.その結果,いずれからも転位像が観察された.このため,観察している転位がZnSe中に存在することを確認することができなかった.
    上記の問題点は保留して,次に,低温における転位の運動速度を測定するため,100K程度の低温において4点曲げ変形により試料に応力を加えた.しかしながら,非常に小さい応力で試料が破壊されてしまい,転位の運動を観測するには至らなかった.これは,基板のGaAs自身が本来破壊され易いことに加え,試料方位が曲げ応力によって劈開し易いことが原因であると考えられる.
    本研究では,ZnSe/GaAs(100)を用いたZnSe中の転位の運動速度測定において上記のような2つの問題点が明らかになった.これらについては,最近良質のバルクZnSe単結晶が作成されるようになったことから,それを適当な方位に切り出したものを試料とすることによって,解決が可能であると考えている.

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