研究者詳細 - 紀和　利彦

MISC - 紀和　利彦

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テラヘルツ電磁波技術研究会

川瀬晃道, 紀和利彦

應用物理 79 ( 9 ) 845 - 845 2010年9月

テラヘルツエレクトロニクス

川瀬晃道, 浅田雅洋, 大竹秀幸, 大谷啓太, 大谷知行, 角屋豊, 紀和利彦, 島野亮, 田窪健二, 田中耕一郎, 谷正彦, 斗内政吉, 平川一彦, 寳迫巌, 南出泰亜

應用物理 79 ( 8 ) 697 - 699 2010年8月

Terahertz chemical microscope for label-free detection of protein complex

Toshihiko Kiwa, Yousuke Kondo, Yuji Minami, Iwao Kawayama, Masayoshi Tonouchi, Keiji Tsukada

Applied Physics Letters 96 ( 21 ) 2010年5月

記述言語：英語出版者・発行元：AMER INST PHYSICS

A terahertz (THz) chemical microscope (TCM) has been proposed and developed for label-free analysis of the interactions of proteins, including immune reactions. A SiO2/Si/sapphire plate was fabricated and emitted THz pulses from the sapphire side using a femtosecond laser. The amplitude of a THz pulse depends on the chemical potential of the SiO2 surface. As an initial demonstration, a biotin-avidin complex was analyzed using TCM. Results indicate that biotin concentrations of up to 10-12 mol/l could be detected, suggesting that a high sensitivity immunoassay system can be realized using this method. The distribution of the THz peak amplitude was measured, reflecting the distribution of the biotin-avidin complex on the plate. © 2010 American Institute of Physics.

DOI： 10.1063/1.3441408

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Dual-Gate field-effect transistor hydrogen gas sensor with thermal compensation

Keiji Tsukada, Masatoshi Kariya, Tomiharu Yamaguchi, Toshihiko Kiwa, Hironobu Yamada, Tsuneyoshi Maehara, Tadayoshi Yamamoto, Shinsuke Kunitsugu

Japanese Journal of Applied Physics 49 ( 2 Part 1 ) 2010年2月

記述言語：英語出版者・発行元：IOP PUBLISHING LTD

We developed a dual-gate field-effect transistor (FET) hydrogen gas sensor for application to hydrogen vehicles. The dual-gate FET hydrogen sensor was integrated with a Pt-gate FET to detect hydrogen and a Ti-gate FET as the reference sensor in the same Si chip. The Ti-FET had the same structure as the Pt-FET except for the gate metal. The Pt-FET showed a good response to hydrogen gas above 10ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the temperature range from room temperature to 80 °C because of the same temperature dependence of the current-voltage (I-V) characteristics. In addition, the temperature of the integrated hydrogen sensor was controlled by an integrated system consisting of a heater and a thermometer at any given temperature under severe weather conditions. © 2010 The Japan Society of Applied Physics.

DOI： 10.1143/JJAP.49.024206

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Evaluation of the sensitivity of hydrogen sensors covered with polytetrafluoroethylene as a protective membrane for humidity

Koji Fujii, Hirotsugu Inoue, Tomiharu Yamaguchi, Toshihiko Kiwa, Keiji Tsukada

IEEJ Transactions on Sensors and Micromachines 130 ( 8 ) 401 - 406 2010年

記述言語：英語

Environmental factors such as dust adsorption effects and humidity generally result in drifts of the sensor output signal and lead tomalfunctions of the sensor and/or reduction in sensitivity. So a sensor package is necessary to protect hydrogen sensors in order to operate the sensors in an actual use environment. In this study, a Pt-FET hydrogen sensor covered with a polytetrafluoroethylene (PTFE) porous membrane was developed. The PTFE porous membrane with different pore sizes of 5 μm, 20 μm A and 30 μm was applied and the effects of humidity on sensor sensitivity were evaluated. The results indicate the effects of humidity on the sensitivity were reduced in the relative humidity range between 20% and 80% for the sensor with the 5-μm porous membrane. © 2010 The Institute of Electrical Engineers of Japan.

DOI： 10.1541/ieejsmas.130.401

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Development and evaluation of a Pt/Ti-FET-type hydrogen sensor

Masatoshi Kariya, Kouhei Mizuhara, Tomiharu Yamaguchi, Toshihiko Kiwa, Shinsuke Kunitsugu, Keiji Tsukada

IEEJ Transactions on Sensors and Micromachines 130 ( 8 ) 407 - 411 2010年

記述言語：英語

A novel gate-structure FET-type hydrogen sensor (Pt/Ti-FET) thathas an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. The dependence of the response characteristics of the sensitivity and selectivity on the Ti thickness was investigated. The sensitivity showed dependence on Ti thickness, and higher sensitivity was obtained with a decrement in Ti thickness. In addition, the Pt/Ti-FET showed good selectivity against other gases (02, C2H6) compared with the Pt-FET. After annealing at 260°C for 30 min under 5 Pa in a vacuum, the Pt/Ti-FET showed different response characteristics from an as-depositedPt/Ti- FET. The annealed Pt/Ti-FETs with a thin Ti adhesion layer (below 10 nm) showed improved hydrogen sensitivity. In particular, the Ti5-nm sample of the Pt/Ti-FET sensor showed a higher hydrogen responsewhen exposed to 0.8% hydrogen gas (526.2 mV) compared to that of the Pt-FET sensor (415.7 mV). However, improvement in hydrogen sensitivity was not obtained in thick Ti samples. Additionally the annealed Pt/Ti-FET showed better selectivity against 0 2 than as-deposited Pt/Ti-FET. © 2010 The Institute of Electrical Engineers of Japan.

DOI： 10.1541/ieejsmas.130.407

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セキュアライフを支えるテラヘルツ波技術テラヘルツ波ケミカル顕微鏡による非標識バイオセンシング

紀和利彦

Bio Industry 27 ( 10 ) 14 - 19 2010年

Detectionofback-sidepitonaferrousplatebymagneticfluxleakagemethod with analyzingmagneticfieldvector

Keiji Tsukada, Mitsuteru Yoshioka, Yoshihiko Kawasaki, Toshihiko Kiwa

NDT & E International 43 ( 4 ) 323 - 328 2010年

テラヘルツ波センシングプレート封入型検査セルの開発

紀和利彦

村田学術振興財団年報 ( 24 ) 2010年

白金薄膜の水素応答特性

水原宏平, 片山文哉, 紀和利彦, 塚田啓二

電気学会ケミカルセンサ研究会資料 CHS-10 ( 1-6.8-14 ) 2010年

HTS-SQUIDを用いた磁気特性計測システムの開発

前田敏志, 片岡伸夫, 紀和利彦, 塚本晃, 安達成司, 田辺圭一, 神鳥明彦, 塚田啓二

応用物理学会学術講演会講演予稿集(CD-ROM) 71st 2010年

HTS-SQUIDを用いた太陽電池の微分抵抗特性分布測定

紀和利彦, 前田敏志, 三宅康介, 片岡伸夫, 塚本晃, 安達成司, 田辺圭一, 塚田啓二

応用物理学会学術講演会講演予稿集(CD-ROM) 71st 2010年

低周波磁場を用いた金属疲労検査法の開発

三宅康介, 吉岡光輝, 紀和利彦, 櫻本昌宏, 井上勝美, 塚田啓二

日本磁気学会学術講演概要集 34th 2010年

スポット溶接評価用漏洩磁束探傷検査法

吉岡光輝, 三宅康介, 紀和利彦, 平野佳伸, 松本光明, 塚田啓二

日本非破壊検査協会講演大会講演概要集 2010 2010年

テラヘルツ波ケミカル顕微鏡によるpH分布評価応用

近藤洋輔, 橋本陽平, 天満陽, 紀和利彦, 塚田啓二

応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部支部学術講演会講演予稿集 2010 2010年

テラヘルツ波ケミカル顕微鏡のμ-TAS測定

橋本陽平, 近藤洋輔, 紀和利彦, 川山巌, 斗内政吉, 塚田啓二

応用物理学会学術講演会講演予稿集(CD-ROM) 71st 2010年

テラヘルツ波面制御デバイスの開発と評価

別府慶治, 杉本武史, 紀和利彦, 塚田啓二

応用物理学関係連合講演会講演予稿集(CD-ROM) 57th 2010年

テラヘルツ波面制御デバイスの開発

別府慶治, 紀和利彦, 塚田啓二

電気・情報関連学会中国支部連合大会講演論文集(CD-ROM) 61st 2010年

触媒金属ゲートFETにおける応答メカニズムの解析

井上大嗣, 片山文哉, 水原宏平, 紀和利彦, 塚田啓二

センサ・マイクロマシンと応用システムシンポジウム(CD-ROM) 27th 2010年

FET型センサを用いた新型酸素センサの開発

切明大輔, 片山文哉, 紀和利彦, 塚田啓二

センサ・マイクロマシンと応用システムシンポジウム(CD-ROM) 27th 2010年

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