2022/01/07 更新

写真a

スズキ ヒロオ
鈴木 弘朗
SUZUKI Hiroo
所属
自然科学学域 助教
職名
助教
外部リンク

学位

  • PhD ( 東北大学 )

研究キーワード

  • 量子伝導

  • グラフェン

  • ナノエレクトロニクス

  • プラズマCVD

  • ナノカーボン

研究分野

  • 自然科学一般 / 磁性、超伝導、強相関系  / 量子伝導

  • ナノテク・材料 / ナノ材料科学

  • エネルギー / プラズマ応用科学

  • ものづくり技術(機械・電気電子・化学工学) / 電気電子材料工学

学歴

  • 東北大学     Department of electronic engineering

    2013年4月 - 2018年3月

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経歴

  • 岡山大学   大学院自然科学研究科   助教

    2020年4月 - 現在

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    国名:日本国

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  • 独立行政法人日本学術振興会   海外特別研究員 (RWTH Aachen University, Germany)

    2018年4月 - 2020年3月

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  • 独立行政法人日本学術振興会   特別研究員

    2016年4月 - 2018年3月

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  • 東北大学MIT派遣プロジェクト   Nanomaterials and Electronics Group, MIT (Prof. Jing Kong)

    2015年11月 - 2015年12月

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  • 東北大学   学際高等研究教育院   博士研究教育院生

    2015年4月 - 2018年3月

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所属学協会

  • フラーレン・ナノチューブ・グラフェン学会

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  • 応用物理学会

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論文

  • Highly Oriented Carbon Nanotube Supercapacitors 査読

    Kohei Komatsubara, Hiroo Suzuki, Hirotaka Inoue, Misaki Kishibuchi, Shona Takahashi, Tatsuki Marui, Shigeyuki Umezawa, Tomohiro Nakagawa, Kyohei Nasu, Mitsuaki Maetani, Yuichiro Tanaka, Miyato Yamada, Takeshi Nishikawa, Yoshifumi Yamashita, Masaki Hada, Yasuhiko Hayashi

    ACS Applied Nano Materials   2022年1月

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    担当区分:責任著者   掲載種別:研究論文(学術雑誌)   出版者・発行元:American Chemical Society (ACS)  

    DOI: 10.1021/acsanm.1c04236

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  • Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions 査読

    Rama Venkata Krishna Rao, Ajinkya K. Ranade, Pradeep Desai, Golap Kalita, Hiroo Suzuki, Yasuhiko Hayashi

    SN Applied Sciences   3 ( 10 )   2021年10月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Springer Science and Business Media LLC  

    <sec>
    <title>Abstract</title>
    Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states.


    </sec><sec>
    <title>Article Highlights</title>
    <list list-type="bullet">
    <list-item>
    We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction.


    </list-item>
    <list-item>
    The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K.


    </list-item>
    <list-item>
    We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization.


    </list-item>
    </list>


    </sec><sec>
    <title>Graphic abstract</title>

    </sec>

    DOI: 10.1007/s42452-021-04774-3

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    その他リンク: https://link.springer.com/article/10.1007/s42452-021-04774-3/fulltext.html

  • Memristive Behavior in One-Dimensional Hexagonal Boron Nitride/Carbon Nanotube Heterostructure Assemblies

    Hiroo Suzuki, Misaki Kishibuchi, Kazuma Shimogami, Mitsuaki Maetani, Kyohei Nasu, Tomohiro Nakagawa, Yuichiro Tanaka, Hirotaka Inoue, Yasuhiko Hayashi

    ACS Applied Electronic Materials   3 ( 8 )   3555 - 3566   2021年8月

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    担当区分:筆頭著者, 責任著者   掲載種別:研究論文(学術雑誌)   出版者・発行元:American Chemical Society (ACS)  

    DOI: 10.1021/acsaelm.1c00472

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  • Single crystal of two-dimensional mixed-halide copper-based perovskites with reversible thermochromism 査読

    Amr Elattar, Hiroo Suzuki, Ryuji Mishima, Kodai Nakao, Hiromi Ota, Takeshi Nishikawa, Hirotaka Inoue, Aung Ko Ko Kyaw, Yasuhiko Hayashi

    Journal of Materials Chemistry C   9 ( 9 )   3264 - 3270   2021年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Royal Society of Chemistry (RSC)  

    <p>Facile synthesis of single crystal of two-dimensional mixed-halide copper-based perovskites with tunable band gaps and their capability of exfoliation and reversible thermochromism.</p>

    DOI: 10.1039/d0tc04307a

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  • A mechanistic investigation of moisture-induced degradation of methylammonium lead iodide 査読

    Masaki Hada, Md. Abdullah Al Asad, Masaaki Misawa, Yoichi Hasegawa, Ryota Nagaoka, Hiroo Suzuki, Ryuji Mishima, Hiromi Ota, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi, Kenji Tsuruta

    Applied Physics Letters   117 ( 25 )   253304 - 253304   2020年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:AIP Publishing  

    DOI: 10.1063/5.0021338

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  • Phonon transport probed at carbon nanotube yarn/sheet boundaries by ultrafast structural dynamics 査読

    Masaki Hada, Kotaro Makino, Hirotaka Inoue, Taisuke Hasegawa, Hideki Masuda, Hiroo Suzuki, Keiichi Shirasu, Tomohiro Nakagawa, Toshio Seki, Jiro Matsuo, Takeshi Nishikawa, Yoshifumi Yamashita, Shin-ya Koshihara, Vlad Stolojan, S. Ravi P. Silva, Jun-ichi Fujita, Yasuhiko Hayashi, Satoshi Maeda, Muneaki Hase

    CARBON   170   165 - 173   2020年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:PERGAMON-ELSEVIER SCIENCE LTD  

    Modern integrated devices and electrical circuits have often been designed with carbon nanostructures, such as carbon nanotubes (CNTs) and graphene due to their high thermal and electrical transport properties. These transport properties are strongly correlated to their acoustic phonon and carrier dynamics. Thus, understanding the phonon and carrier dynamics of carbon nanostructures in extremely small regions will lead to their further practical applications. Here, we demonstrate ultrafast time-resolved electron diffraction and ultrafast transient spectroscopy to characterize the phonon and carrier dynamics at the boundary of quasi-one-dimensional CNTs before and after Joule annealing. The results from ultrafast time-resolved electron diffraction show that the CNTs after Joule annealing reach the phonon equilibrium state extremely fast with a timescale of 10 ps, which indicates that thermal transport in CNTs improves following Joule annealing. The methodology described in this study connects conventional macroscopic thermo- and electrodynamics to those at the nanometer scale. Realistic timescale kinetic simulations were performed to further elaborate on the phenomena that occur in CNTs during Joule annealing. The insights obtained in this study are expected to pave the way to parameterize the unexplored thermal and electrical properties of carbon materials at the nanometer scale. (C) 2020 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.carbon.2020.08.026

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  • Enhanced Thermoelectric Performance of As-Grown Suspended Graphene Nanoribbons 査読

    Q.-Y. Li, T. Feng, W. Okita, Y. Komori, H. Suzuki, T. Kato, T. Kaneko, T. Ikuta, X. Ruan, and K. Takahashi

    ACS nano   13 ( 8 )   9182 - 9189   2019年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER CHEMICAL SOC  

    Conventionally, graphene is a poor thermoelectric material with a low figure of merit (ZT) of 10(-4-)-10(-3). Although nanostructuring was proposed to improve the thermoelectric performance of graphene, little experimental progress has been accomplished. Here, we carefully fabricated as -grown suspended graphene nanoribbons with quarter micron length and similar to 40 nm width. The ratio of electrical to thermal conductivity was enhanced by 1-2 orders of magnitude, and the Seebeck coefficient was several times larger than bulk graphene, which yielded record -high ZT values up to similar to 0.1. Moreover, we observed a record -high electronic contribution of similar to 20% to the total thermal conductivity in the nanoribbon. Concurrent phonon Boltzmann transport simulations reveal that the reduction of lattice thermal conductivity is mainly attributed to quasi -ballistic phonon transport. The record -high ratio of electrical to thermal conductivity was enabled by the disparate electron and phonon mean free paths as well as the clean samples, and the enhanced Seebeck coefficient was attributed to the band gap opening. Our work not only demonstrates that electron and phonon transport can be fundamentally tuned and decoupled in graphene but also indicates that graphene with appropriate nanostructures can be very promising thermoelectric materials.

    DOI: 10.1021/acsnano.9603521

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  • Highly Stable Persistent Photoconductivity with Suspended Graphene Nanoribbons 査読

    Suzuki Hiroo, Ogura Noritada, Kaneko Toshiro, Kato Toshiaki

    SCIENTIFIC REPORTS   8   2018年8月

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  • Wafer-scale fabrication and growth dynamics of suspended graphene nanoribbon arrays 査読

    Hiroo Suzuki, Toshiro Kaneko, Yasushi Shibuta, Munekazu Ohno, Yuki Maekawa, Toshiaki Kato

    NATURE COMMUNICATIONS   7   2016年6月

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:NATURE PUBLISHING GROUP  

    Adding a mechanical degree of freedom to the electrical and optical properties of atomically thin materials can provide an excellent platform to investigate various optoelectrical physics and devices with mechanical motion interaction. The large scale fabrication of such atomically thin materials with suspended structures remains a challenge. Here we demonstrate the wafer-scale bottom-up synthesis of suspended graphene nanoribbon arrays (over 1,000,000 graphene nanoribbons in 2 x 2 cm(2) substrate) with a very high yield (over 98%). Polarized Raman measurements reveal graphene nanoribbons in the array can have relatively uniform-edge structures with near zigzag orientation dominant. A promising growth model of suspended graphene nanoribbons is also established through a comprehensive study that combined experiments, molecular dynamics simulations and theoretical calculations with a phase-diagram analysis. We believe that our results can contribute to pushing the study of graphene nanoribbons into a new stage related to the optoelectrical physics and industrial applications.

    DOI: 10.1038/ncomms11797

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    J-GLOBAL

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  • Large Scale Fabrication of Suspended Graphene Nanoribbon Arrays 査読

    Hiroo Suzuki, Toshiaki Kato, Toshiro Kaneko

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)   2016年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

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  • Improvement of electrical device performances for graphene directly grown on a SiO2 substrate by plasma chemical vapor deposition 査読

    Hiroo Suzuki, Toshiaki Kato, Toshiro Kaneko

    Plasma and Fusion Research   9 ( 9 )   1206079 - Hiroo Suzuki   2014年

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japan Society of Plasma Science and Nuclear Fusion Research  

    The electrical device performances of graphene directly grown on a SiO2 substrate have been improved through the precise adjustment of growth conditions such as growth temperature and growth time in plasma chemical vapor deposition (CVD). Only at the suitable combination of growth time and temperature, high quality and uniform graphene sheet can be directly grown on a SiO2 substrate. Forward and reverse sweeps of sourcedrain current (Ids) vs. gate bias voltage (Vgs) showed small hysteresis, possibly caused by the clean surface of the graphene device fabricated by plasma CVD, a technique that did not involve any transfer. Four-point probe measurements to evaluate the intrinsic sheet resistance of the fabricated graphene showed its value to be 170 - 200 Ω/sq, a value much lower than that of graphene directly grown on SiO2 substrate by other techniques. This low sheet resistance possibly originated from the high quality of graphene obtained by plasma CVD. These observations suggest that graphene directly grown on SiO2 substrate by plasma CVD should be a very promising candidate for fabrication of graphene-based high-performance electrical devices.

    DOI: 10.1585/pfr.9.1206079

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  • Catalyst-Free Growth of High-Quality Graphene by High-Temperature Plasma Reaction 査読

    T. Kato, M. Morikawa, H. Suzuki, B. Xu, R. Hatakeyama, T. Kaneko

    Nanoscience & Technology   1 ( 1 )   01-1 - 01-4   2013年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

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  • Fabrication of Au Nanoparticle- Decorated Standing Graphene 査読

    T. Kato, B. Xu, H. Suzuki, T. Kaneko

    JSM Nanotechnology & Nanomedicine   1 ( 3 )   1018-1 - 1018-3   2013年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

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MISC

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講演・口頭発表等

  • カーボンナノチューブ構造体へのボロンナイトライド直接合成とヘテロ界面に由来するメモリスティブな電気特性

    岸淵美咲, 那須郷平, 前谷光顕, 田中佑一郎, 林靖彦, 鈴木弘朗

    2021年度 応用物理・物理系学会 中国四国支部合同学術講演会  2021年7月31日 

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  • カーボンナノチューブによる植物生体センサシステムの構築

    山田雅人, 鈴木弘朗, 西川亘, 持田恵一, 平山隆志, 林靖彦

    2021年度 応用物理・物理系学会 中国四国支部合同学術講演会  2021年7月31日 

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  • Large crystal growth of MoS2 by Vapor-solid-liquid method with stacked growth substrates

    Ryoki Hashimoto, Liu Yijun, Misaki Kishibuchi, Yasumitu Miyata, Yasuhiko Hayashi, Hiroo Suzuki

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2021年6月 

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  • One-dimensional WS2 growth by salt-assisted chemical vapor deposition

    Hiroo Suzuki, Misaki Kishibuchi, Liu Zheng, Yasumitsu Miyata, Yasuhiko Hayashi

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2021年6月 

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  • Study on origin of memristive behavior in hBN-grown CNT assemblies

    Misaki Kishibuchi, Kyohei Nasu, Mitsuaki Maetani, Yuichiro Tanaka, Yasuhiko Hayashi, Hiroo Suzuki

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2021年6月 

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  • Growth of hBN on CNT assemblies and their memristive behavior

    Misaki Kishibuchi, Kazuma Shimogami, Hirotaka Inoue, Kyohei Nasu, Tomohiro Nakagawa, Mitsuaki Maetani, Yuichiro Tanaka, Yasuhiko Hayashi, Hiroo Suzuki

    第60回 フラーレン・ナノチューブ・グラフェン総合シンポジウム  2021年3月 

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  • One-dimensional growth of WS2 by chemical vapor deposition

    Kazuma Shimogami, Misaki Kishibuchi, Hirotaka Inoue, Liu Zheng, Yasumitsu Miyata, Yasuhiko Hayashi, Hiroo Suzuki

    第60回 フラーレン・ナノチューブ・グラフェン総合シンポジウム  2021年3月 

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受賞

  • 若手奨励賞

    2018年3月   第53回フラーレン・ナノチューブ・グラフェン総合シンポジウム   Wafer-scale integration of suspended graphene nanoribbons for non-volatile optical memory application

    鈴木 弘朗

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  • 若手学会発表賞/

    2016年12月   プラズマ・核融合学会/   急速加熱プラズマCVD成長架橋グラフェンナノリボンの合成機構解明と 光電子デバイス応用/

    鈴木 弘朗

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  • 第41回(2016年秋季)応用物理学会講演奨励賞/

    2016年9月   応用物理学会/   架橋グラフェンナノリボンアレイのウェハースケール高集積化合成/

    鈴木 弘朗

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  • The 62nd JSAP Spring Meeting, 2015 Poster Award/

    2015年4月   応用物理学会/   プラズマCVDによるグラフェンナノリボンの架橋合成機構

    鈴木 弘朗, 加藤 俊顕, 金子 俊郎

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  • Award for Encouragement of Research in the 24th Annual Meeting of MRSJ Symposium A/

    2015年1月   The material research society of Japan (MRSJ)/   High yield synthesis of graphene nanoribbon by plasma CVD

    鈴木 弘朗

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共同研究・競争的資金等の研究

  • 一次元構造をもつ原子層半導体の合成と光電子物性解明

    研究課題/領域番号:21K14497  2021年04月 - 2023年03月

    日本学術振興会  科学研究費助成事業 若手研究  若手研究

    鈴木 弘朗

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    配分額:4680000円 ( 直接経費:3600000円 、 間接経費:1080000円 )

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  • リモートコミュニケーションデバイス筐体のための高い耐環境性をもつ超強度カーボンナノチューブ紡績糸の開発

    2021年04月 - 2022年03月

    科学技術振興機構(JST)  研究成果最適展開支援プログラム(A-STEP) 

    鈴木 弘朗

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  • 半導体原子層物質のプラズマを用いた低温・高速合成

    2021年04月 - 2022年03月

    矢崎科学技術振興財団  2021年度 矢崎科学技術振興財団 研究助成 

    鈴木 弘朗

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  • プラズマ有機金属化学気相成長の3ゾーン化による二次元半導体の低温・高速成長

    2021年04月 - 2022年02月

    公益財団法人日本科学協会  2021年度 笹川科学研究助成 

    鈴木 弘朗

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  • 二次元半導体のプラズマを用いた成長促進効果の開拓と低温・高速合成

    2020年11月 - 2021年11月

    住友財団  2020年度住友財団基礎科学研究助成 

    鈴木 弘朗

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担当授業科目

  • 表現技法1 (2021年度) 前期  - その他

  • 表現技法2 (2021年度) 後期  - その他

  • 電子情報システム工学特別研究 (2021年度) 通年  - その他

  • 電子情報システム工学論 (2021年度) 前期  - 金1,金2

  • 電気通信系実験A (2021年度) 1・2学期  - 水2,水3,水4,水5,水6

  • 電気通信系実験B (2021年度) 3・4学期  - 水2,水3,水4,水5,水6

  • 通信ネットワーク工学実験Ⅱ (2020年度) 3・4学期  - 火3,火4,火5,火6,火7

  • 電気通信系実験A (2020年度) 1・2学期  - 水2,水3,水4,水5,水6

  • 電気通信系実験C (2020年度) 3・4学期  - 火3,火4,火5,火6,火7

  • 電気通信系実験Ⅲ (2020年度) 3・4学期  - 火3,火4,火5,火6,火7

  • 電気通信系実験I (2020年度) 1・2学期  - 水2,水3,水4,水5,水6

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