記述言語：英語   掲載種別：研究論文（学術雑誌）  

In this study, we investigated the impact of benzophenone (BP), a small molecule additive, on the performance and stability of inverted perovskite solar cells (PSCs). Specifically, we introduced BP into the perovskite precursor solution of FAPbI3 to fabricate PSCs with an ITO/PEDOT:PSS/BP:FAPbI3/PCBM/C60/PCB/Ag architecture. The incorporation of BP with an optimum concentration of 2 mg mL-1 significantly enhanced the power conversion efficiency (PCE) of the inverted PSC from 13.12 to 18.84% with negligible hysteresis. Notably, the BP-based PSCs retained ∼90% of their initial PCE after being stored in ambient air with 30% relative humidity at 25 °C for 700 h. In contrast, control devices showed rapid degradation, retaining only 30% of their initial value within 300 h under the same conditions. We attributed the superior performance and stability of the BP-based PSCs to the grain boundary passivation of the perovskite film. The improvement was mainly attributed to the intermolecular interaction between the O-donor Lewis base BP material and both Pb2+ and FA+ in FAPbI3. This effectively suppresses trap-assisted recombination and promotes the conversion of the δ-phase to photoactive and stable α-phase FAPbI3. Overall, our findings suggest that BP is a promising additive for improving the performance and stability of inverted PSCs.

DOI： 10.1021/acsami.3c09835

PubMed

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：ROYAL SOC CHEMISTRY  

Two-dimensional (2D) hybrid perovskites have exhibited multiple features owing to their multiple quantum well structure. Here, we show the synthesis and characterization of 2D mixed-halide Cu-based perovskite crystals, R2Cu(Cl/Br)(4), with three different alkyl chains, where R is methyl, butyl, or hexyl ammonium cations. Exfoliated perovskite flakes exhibit reversible thermochromism with changes in color darkness with temperature variation. Differential scanning calorimetry and temperature-dependent X-ray diffraction measurements reveal that the thermochromic behavior mechanism of R2Cu(Cl/Br)(4) depends on the nature of the alkyl chain.

DOI： 10.1039/d2nj04693h

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掲載種別：研究論文（学術雑誌）   出版者・発行元：American Chemical Society (ACS)  

DOI： 10.1021/acsomega.2c00506

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing Ltd  

Carbon nanotubes (CNTs) exhibit extremely high nanoscopic thermal/electrical transport and mechanical properties. However, the macroscopic properties of assembled CNTs are significantly lower than those of CNTs because of the boundary structure between the CNTs. Therefore, it is crucial to understand the relationship between the nanoscopic boundary structure in CNTs and the macroscopic properties of the assembled CNTs. Previous studies have shown that the nanoscopic phonon transport and macroscopic thermal transport in CNTs are improved by Joule annealing because of the improved boundary Van-der-Waals interactions between CNTs via the graphitization of amorphous carbon. In this study, we investigate the mechanical strength and thermal/electrical transport properties of CNT yarns with and without Joule annealing at various temperatures, analyzing the phenomena occurring at the boundaries of CNTs. The obtained experimental and theoretical results connect the nanoscopic boundary interaction of CNTs in CNT yarns and the macroscopic mechanical and transport properties of CNT yarns.

DOI： 10.1088/1361-6528/ac57d5

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：WILEY-V C H VERLAG GMBH  

Two-dimensional (2D) hybrid perovskites with novel functionalities and structural diversity are a perfect platform for emerging optoelectronic devices such as photodetectors, light-emitting diodes, and solar cells. Here, we demonstrate that excess concentration of Cesium bromide (CsBr) is key to the formation of easily exfoliated 2D Cs2Cu(Cl/Br)(4) perovskite crystal. Furthermore, by employing this trick to 2D perovskite MA(2)Cu(Cl/Br)(4) (MA=methylammonium), we achieve a phase-pure easily exfoliated 2D mixed-cation (MA/Cs)(2)Cu(Cl/Br)(4) perovskite crystal, which exhibits reduced bandgap (1.53 eV) with ferromagnetic behavior and photovoltaic property. The resultant mixed-cation structured device reveals enhanced efficiency compared to all MA and all Cs counterparts. These findings demonstrate the importance of cation-engineering in developing innovative materials with novel properties.

DOI： 10.1002/chem.202104316

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担当区分：責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：American Chemical Society (ACS)  

The demand for supercapacitors (SCs) with high capacitance, high charge-discharge rate, and long lifespan has been increasing because of the rapid development of wearable devices. In particular, flexible and durable SCs are essential for applications in wearable devices. A reasonable strategy to achieve such SCs involves the design and fabrication of SCs with flexible materials. In this study, we present a flexible SC with highly oriented carbon nanotube (CNT) sheets, which exhibit all the component functions of SCs: activated materials, conductive materials, and current collectors. Repeated bending tests validated the robustness of the flexible SCs. The SCs demonstrated extremely high durability with >99.9% capacitance retention after 50 000 bending cycles. Furthermore, we observed that the orientation angle of the CNT sheets with respect to the current flow direction (theta) was crucial for determining the performance of SCs. The SCs with CNT sheets oriented in the current flow direction (theta = 0 degrees) showed a higher scan rate and robustness than those with other CNT sheet orientations (theta = 45 or 90 degrees), because of the ease of access of charge carriers to the electrodes of the entire CNT sheet. Well-designed flexible and durable CNT-SCs can drastically improve the performance of future flexible devices.

DOI： 10.1021/acsanm.1c04236

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掲載種別：研究論文（学術雑誌）   出版者・発行元：Royal Society of Chemistry (RSC)  

Formation of secondary phase polytypes through incorporation of copper into MAPbBr₃ perovskite yields bandgap reduction with generation of near-IR photocarriers.

DOI： 10.1039/d2qm00491g

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掲載種別：研究論文（学術雑誌）   出版者・発行元：Royal Society of Chemistry (RSC)  

Light absorption enhancement was achieved through structure modulation of the Cs₃Bi₂Br₉ perovskite crystal via Cu-alloying. The Cs₃Bi₂Br₉ perovskite retains its matrix structure with homogeneously distributed Cs₂CuBr₄ large domains.

DOI： 10.1039/d2tc01762h

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掲載種別：研究論文（学術雑誌）   出版者・発行元：Springer Science and Business Media LLC  

<sec>
<title>Abstract</title>
Temperature-dependent studies of Ga₂O₃-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga₂O₃) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga₂O₃ heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga₂O₃ heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga₂O₃-based heterojunction device, which signifies the presence of surface defects and interface states.


</sec><sec>
<title>Article Highlights</title>
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We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga₂O₃) heterojunction.


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The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K.


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We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization.


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DOI： 10.1007/s42452-021-04774-3

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その他リンク： https://link.springer.com/article/10.1007/s42452-021-04774-3/fulltext.html

担当区分：筆頭著者,　責任著者   掲載種別：研究論文（学術雑誌）   出版者・発行元：American Chemical Society (ACS)  

DOI： 10.1021/acsaelm.1c00472

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Royal Society of Chemistry (RSC)  

<p>Facile synthesis of single crystal of two-dimensional mixed-halide copper-based perovskites with tunable band gaps and their capability of exfoliation and reversible thermochromism.</p>

DOI： 10.1039/d0tc04307a

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掲載種別：研究論文（学術雑誌）   出版者・発行元：AIP Publishing  

DOI： 10.1063/5.0021338

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：PERGAMON-ELSEVIER SCIENCE LTD  

Modern integrated devices and electrical circuits have often been designed with carbon nanostructures, such as carbon nanotubes (CNTs) and graphene due to their high thermal and electrical transport properties. These transport properties are strongly correlated to their acoustic phonon and carrier dynamics. Thus, understanding the phonon and carrier dynamics of carbon nanostructures in extremely small regions will lead to their further practical applications. Here, we demonstrate ultrafast time-resolved electron diffraction and ultrafast transient spectroscopy to characterize the phonon and carrier dynamics at the boundary of quasi-one-dimensional CNTs before and after Joule annealing. The results from ultrafast time-resolved electron diffraction show that the CNTs after Joule annealing reach the phonon equilibrium state extremely fast with a timescale of 10 ps, which indicates that thermal transport in CNTs improves following Joule annealing. The methodology described in this study connects conventional macroscopic thermo- and electrodynamics to those at the nanometer scale. Realistic timescale kinetic simulations were performed to further elaborate on the phenomena that occur in CNTs during Joule annealing. The insights obtained in this study are expected to pave the way to parameterize the unexplored thermal and electrical properties of carbon materials at the nanometer scale. (C) 2020 Elsevier Ltd. All rights reserved.

DOI： 10.1016/j.carbon.2020.08.026

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：AMER CHEMICAL SOC  

Conventionally, graphene is a poor thermoelectric material with a low figure of merit (ZT) of 10(-4-)-10(-3). Although nanostructuring was proposed to improve the thermoelectric performance of graphene, little experimental progress has been accomplished. Here, we carefully fabricated as -grown suspended graphene nanoribbons with quarter micron length and similar to 40 nm width. The ratio of electrical to thermal conductivity was enhanced by 1-2 orders of magnitude, and the Seebeck coefficient was several times larger than bulk graphene, which yielded record -high ZT values up to similar to 0.1. Moreover, we observed a record -high electronic contribution of similar to 20% to the total thermal conductivity in the nanoribbon. Concurrent phonon Boltzmann transport simulations reveal that the reduction of lattice thermal conductivity is mainly attributed to quasi -ballistic phonon transport. The record -high ratio of electrical to thermal conductivity was enabled by the disparate electron and phonon mean free paths as well as the clean samples, and the enhanced Seebeck coefficient was attributed to the band gap opening. Our work not only demonstrates that electron and phonon transport can be fundamentally tuned and decoupled in graphene but also indicates that graphene with appropriate nanostructures can be very promising thermoelectric materials.

DOI： 10.1021/acsnano.9603521

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担当区分：筆頭著者  

DOI： 10.1038/s41598-018-30278-z

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担当区分：筆頭著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：NATURE PUBLISHING GROUP  

Adding a mechanical degree of freedom to the electrical and optical properties of atomically thin materials can provide an excellent platform to investigate various optoelectrical physics and devices with mechanical motion interaction. The large scale fabrication of such atomically thin materials with suspended structures remains a challenge. Here we demonstrate the wafer-scale bottom-up synthesis of suspended graphene nanoribbon arrays (over 1,000,000 graphene nanoribbons in 2 x 2 cm(2) substrate) with a very high yield (over 98%). Polarized Raman measurements reveal graphene nanoribbons in the array can have relatively uniform-edge structures with near zigzag orientation dominant. A promising growth model of suspended graphene nanoribbons is also established through a comprehensive study that combined experiments, molecular dynamics simulations and theoretical calculations with a phase-diagram analysis. We believe that our results can contribute to pushing the study of graphene nanoribbons into a new stage related to the optoelectrical physics and industrial applications.

DOI： 10.1038/ncomms11797

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記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：IEEE  

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担当区分：筆頭著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japan Society of Plasma Science and Nuclear Fusion Research  

The electrical device performances of graphene directly grown on a SiO2 substrate have been improved through the precise adjustment of growth conditions such as growth temperature and growth time in plasma chemical vapor deposition (CVD). Only at the suitable combination of growth time and temperature, high quality and uniform graphene sheet can be directly grown on a SiO2 substrate. Forward and reverse sweeps of sourcedrain current (Ids) vs. gate bias voltage (Vgs) showed small hysteresis, possibly caused by the clean surface of the graphene device fabricated by plasma CVD, a technique that did not involve any transfer. Four-point probe measurements to evaluate the intrinsic sheet resistance of the fabricated graphene showed its value to be 170 - 200 Ω/sq, a value much lower than that of graphene directly grown on SiO2 substrate by other techniques. This low sheet resistance possibly originated from the high quality of graphene obtained by plasma CVD. These observations suggest that graphene directly grown on SiO2 substrate by plasma CVD should be a very promising candidate for fabrication of graphene-based high-performance electrical devices.

DOI： 10.1585/pfr.9.1206079

Scopus

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

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記述言語：日本語  

J-GLOBAL

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記述言語：日本語  

J-GLOBAL

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記述言語：日本語  

J-GLOBAL

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記述言語：日本語  

J-GLOBAL

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執筆者：本人 

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