Updated on 2022/01/07

写真a

 
SUZUKI Hiroo
 
Organization
Faculty of Natural Science and Technology Assistant Professor
Position
Assistant Professor
External link

Degree

  • PhD ( Tohoku University )

Research Interests

  • Quantum transport

  • Graphene

  • Nano electronics

  • Plasma CVD

  • Nano carbon

Research Areas

  • Natural Science / Magnetism, superconductivity and strongly correlated systems  / Quantum transport

  • Nanotechnology/Materials / Nanomaterials

  • Energy Engineering / Applied plasma science

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

Education

  • Tohoku University   大学院工学研究科   電子工学専攻 博士課程

    2013.4 - 2018.3

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Research History

  • Okayama University   The Graduate School of Natural Science and Technology   Assistant Professor

    2020.4

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    Country:Japan

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  • Japan society of for the promotion of science   Overseas Research Fellowship (RWTH Aachen University, Germany)

    2018.4 - 2020.3

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  • Japan society of for the promotion of science   Research fellowship

    2016.4 - 2018.3

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  • MIT dispatch program, Tohoku University   Nanomaterials and Electronics Group, MIT (Prof. Jing Kong)

    2015.11 - 2015.12

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  • Tohoku University   Division for interdisciplinary Advanced Research and Education   Doctoral researcher

    2015.4 - 2018.3

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Professional Memberships

  • The Fullerenes, Nanotubes and Graphene Research Society

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  • THE JAPAN SOCIETY OF APPLIED PHYSICS

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Papers

  • Highly Oriented Carbon Nanotube Supercapacitors Reviewed

    Kohei Komatsubara, Hiroo Suzuki, Hirotaka Inoue, Misaki Kishibuchi, Shona Takahashi, Tatsuki Marui, Shigeyuki Umezawa, Tomohiro Nakagawa, Kyohei Nasu, Mitsuaki Maetani, Yuichiro Tanaka, Miyato Yamada, Takeshi Nishikawa, Yoshifumi Yamashita, Masaki Hada, Yasuhiko Hayashi

    ACS Applied Nano Materials   2022.1

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acsanm.1c04236

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  • Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions Reviewed

    Rama Venkata Krishna Rao, Ajinkya K. Ranade, Pradeep Desai, Golap Kalita, Hiroo Suzuki, Yasuhiko Hayashi

    SN Applied Sciences   3 ( 10 )   2021.10

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    Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    <sec>
    <title>Abstract</title>
    Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states.


    </sec><sec>
    <title>Article Highlights</title>
    <list list-type="bullet">
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    We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction.


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    The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K.


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    We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization.


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    </sec><sec>
    <title>Graphic abstract</title>

    </sec>

    DOI: 10.1007/s42452-021-04774-3

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    Other Link: https://link.springer.com/article/10.1007/s42452-021-04774-3/fulltext.html

  • Memristive Behavior in One-Dimensional Hexagonal Boron Nitride/Carbon Nanotube Heterostructure Assemblies

    Hiroo Suzuki, Misaki Kishibuchi, Kazuma Shimogami, Mitsuaki Maetani, Kyohei Nasu, Tomohiro Nakagawa, Yuichiro Tanaka, Hirotaka Inoue, Yasuhiko Hayashi

    ACS Applied Electronic Materials   3 ( 8 )   3555 - 3566   2021.8

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    Authorship:Lead author, Corresponding author   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acsaelm.1c00472

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  • Single crystal of two-dimensional mixed-halide copper-based perovskites with reversible thermochromism Reviewed

    Amr Elattar, Hiroo Suzuki, Ryuji Mishima, Kodai Nakao, Hiromi Ota, Takeshi Nishikawa, Hirotaka Inoue, Aung Ko Ko Kyaw, Yasuhiko Hayashi

    Journal of Materials Chemistry C   9 ( 9 )   3264 - 3270   2021

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    Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    <p>Facile synthesis of single crystal of two-dimensional mixed-halide copper-based perovskites with tunable band gaps and their capability of exfoliation and reversible thermochromism.</p>

    DOI: 10.1039/d0tc04307a

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  • A mechanistic investigation of moisture-induced degradation of methylammonium lead iodide Reviewed

    Masaki Hada, Md. Abdullah Al Asad, Masaaki Misawa, Yoichi Hasegawa, Ryota Nagaoka, Hiroo Suzuki, Ryuji Mishima, Hiromi Ota, Takeshi Nishikawa, Yoshifumi Yamashita, Yasuhiko Hayashi, Kenji Tsuruta

    Applied Physics Letters   117 ( 25 )   253304 - 253304   2020.12

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    Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    DOI: 10.1063/5.0021338

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  • Phonon transport probed at carbon nanotube yarn/sheet boundaries by ultrafast structural dynamics Reviewed

    Masaki Hada, Kotaro Makino, Hirotaka Inoue, Taisuke Hasegawa, Hideki Masuda, Hiroo Suzuki, Keiichi Shirasu, Tomohiro Nakagawa, Toshio Seki, Jiro Matsuo, Takeshi Nishikawa, Yoshifumi Yamashita, Shin-ya Koshihara, Vlad Stolojan, S. Ravi P. Silva, Jun-ichi Fujita, Yasuhiko Hayashi, Satoshi Maeda, Muneaki Hase

    CARBON   170   165 - 173   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:PERGAMON-ELSEVIER SCIENCE LTD  

    Modern integrated devices and electrical circuits have often been designed with carbon nanostructures, such as carbon nanotubes (CNTs) and graphene due to their high thermal and electrical transport properties. These transport properties are strongly correlated to their acoustic phonon and carrier dynamics. Thus, understanding the phonon and carrier dynamics of carbon nanostructures in extremely small regions will lead to their further practical applications. Here, we demonstrate ultrafast time-resolved electron diffraction and ultrafast transient spectroscopy to characterize the phonon and carrier dynamics at the boundary of quasi-one-dimensional CNTs before and after Joule annealing. The results from ultrafast time-resolved electron diffraction show that the CNTs after Joule annealing reach the phonon equilibrium state extremely fast with a timescale of 10 ps, which indicates that thermal transport in CNTs improves following Joule annealing. The methodology described in this study connects conventional macroscopic thermo- and electrodynamics to those at the nanometer scale. Realistic timescale kinetic simulations were performed to further elaborate on the phenomena that occur in CNTs during Joule annealing. The insights obtained in this study are expected to pave the way to parameterize the unexplored thermal and electrical properties of carbon materials at the nanometer scale. (C) 2020 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.carbon.2020.08.026

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  • Enhanced Thermoelectric Performance of As-Grown Suspended Graphene Nanoribbons Reviewed

    Q.-Y. Li, T. Feng, W. Okita, Y. Komori, H. Suzuki, T. Kato, T. Kaneko, T. Ikuta, X. Ruan, and K. Takahashi

    ACS nano   13 ( 8 )   9182 - 9189   2019.8

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER CHEMICAL SOC  

    Conventionally, graphene is a poor thermoelectric material with a low figure of merit (ZT) of 10(-4-)-10(-3). Although nanostructuring was proposed to improve the thermoelectric performance of graphene, little experimental progress has been accomplished. Here, we carefully fabricated as -grown suspended graphene nanoribbons with quarter micron length and similar to 40 nm width. The ratio of electrical to thermal conductivity was enhanced by 1-2 orders of magnitude, and the Seebeck coefficient was several times larger than bulk graphene, which yielded record -high ZT values up to similar to 0.1. Moreover, we observed a record -high electronic contribution of similar to 20% to the total thermal conductivity in the nanoribbon. Concurrent phonon Boltzmann transport simulations reveal that the reduction of lattice thermal conductivity is mainly attributed to quasi -ballistic phonon transport. The record -high ratio of electrical to thermal conductivity was enabled by the disparate electron and phonon mean free paths as well as the clean samples, and the enhanced Seebeck coefficient was attributed to the band gap opening. Our work not only demonstrates that electron and phonon transport can be fundamentally tuned and decoupled in graphene but also indicates that graphene with appropriate nanostructures can be very promising thermoelectric materials.

    DOI: 10.1021/acsnano.9603521

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  • Highly Stable Persistent Photoconductivity with Suspended Graphene Nanoribbons Reviewed

    Suzuki Hiroo, Ogura Noritada, Kaneko Toshiro, Kato Toshiaki

    SCIENTIFIC REPORTS   8   2018.8

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  • Wafer-scale fabrication and growth dynamics of suspended graphene nanoribbon arrays Reviewed

    Hiroo Suzuki, Toshiro Kaneko, Yasushi Shibuta, Munekazu Ohno, Yuki Maekawa, Toshiaki Kato

    NATURE COMMUNICATIONS   7   2016.6

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:NATURE PUBLISHING GROUP  

    Adding a mechanical degree of freedom to the electrical and optical properties of atomically thin materials can provide an excellent platform to investigate various optoelectrical physics and devices with mechanical motion interaction. The large scale fabrication of such atomically thin materials with suspended structures remains a challenge. Here we demonstrate the wafer-scale bottom-up synthesis of suspended graphene nanoribbon arrays (over 1,000,000 graphene nanoribbons in 2 x 2 cm(2) substrate) with a very high yield (over 98%). Polarized Raman measurements reveal graphene nanoribbons in the array can have relatively uniform-edge structures with near zigzag orientation dominant. A promising growth model of suspended graphene nanoribbons is also established through a comprehensive study that combined experiments, molecular dynamics simulations and theoretical calculations with a phase-diagram analysis. We believe that our results can contribute to pushing the study of graphene nanoribbons into a new stage related to the optoelectrical physics and industrial applications.

    DOI: 10.1038/ncomms11797

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    J-GLOBAL

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  • Large Scale Fabrication of Suspended Graphene Nanoribbon Arrays Reviewed

    Hiroo Suzuki, Toshiaki Kato, Toshiro Kaneko

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)   2016

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:IEEE  

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  • Improvement of electrical device performances for graphene directly grown on a SiO2 substrate by plasma chemical vapor deposition Reviewed

    Hiroo Suzuki, Toshiaki Kato, Toshiro Kaneko

    Plasma and Fusion Research   9 ( 9 )   1206079 - Hiroo Suzuki   2014

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japan Society of Plasma Science and Nuclear Fusion Research  

    The electrical device performances of graphene directly grown on a SiO2 substrate have been improved through the precise adjustment of growth conditions such as growth temperature and growth time in plasma chemical vapor deposition (CVD). Only at the suitable combination of growth time and temperature, high quality and uniform graphene sheet can be directly grown on a SiO2 substrate. Forward and reverse sweeps of sourcedrain current (Ids) vs. gate bias voltage (Vgs) showed small hysteresis, possibly caused by the clean surface of the graphene device fabricated by plasma CVD, a technique that did not involve any transfer. Four-point probe measurements to evaluate the intrinsic sheet resistance of the fabricated graphene showed its value to be 170 - 200 Ω/sq, a value much lower than that of graphene directly grown on SiO2 substrate by other techniques. This low sheet resistance possibly originated from the high quality of graphene obtained by plasma CVD. These observations suggest that graphene directly grown on SiO2 substrate by plasma CVD should be a very promising candidate for fabrication of graphene-based high-performance electrical devices.

    DOI: 10.1585/pfr.9.1206079

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  • Catalyst-Free Growth of High-Quality Graphene by High-Temperature Plasma Reaction Reviewed

    T. Kato, M. Morikawa, H. Suzuki, B. Xu, R. Hatakeyama, T. Kaneko

    Nanoscience & Technology   1 ( 1 )   01-1 - 01-4   2013.12

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    Language:English   Publishing type:Research paper (scientific journal)  

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  • Fabrication of Au Nanoparticle- Decorated Standing Graphene Reviewed

    T. Kato, B. Xu, H. Suzuki, T. Kaneko

    JSM Nanotechnology & Nanomedicine   1 ( 3 )   1018-1 - 1018-3   2013.12

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    Language:English   Publishing type:Research paper (scientific journal)  

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Presentations

  • カーボンナノチューブ構造体へのボロンナイトライド直接合成とヘテロ界面に由来するメモリスティブな電気特性

    岸淵美咲, 那須郷平, 前谷光顕, 田中佑一郎, 林靖彦, 鈴木弘朗

    2021年度 応用物理・物理系学会 中国四国支部合同学術講演会  2021.7.31 

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  • カーボンナノチューブによる植物生体センサシステムの構築

    山田雅人, 鈴木弘朗, 西川亘, 持田恵一, 平山隆志, 林靖彦

    2021年度 応用物理・物理系学会 中国四国支部合同学術講演会  2021.7.31 

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  • Large crystal growth of MoS2 by Vapor-solid-liquid method with stacked growth substrates

    Ryoki Hashimoto, Liu Yijun, Misaki Kishibuchi, Yasumitu Miyata, Yasuhiko Hayashi, Hiroo Suzuki

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2021.6 

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  • One-dimensional WS2 growth by salt-assisted chemical vapor deposition

    Hiroo Suzuki, Misaki Kishibuchi, Liu Zheng, Yasumitsu Miyata, Yasuhiko Hayashi

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2021.6 

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  • Study on origin of memristive behavior in hBN-grown CNT assemblies

    Misaki Kishibuchi, Kyohei Nasu, Mitsuaki Maetani, Yuichiro Tanaka, Yasuhiko Hayashi, Hiroo Suzuki

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2021.6 

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  • Growth of hBN on CNT assemblies and their memristive behavior

    Misaki Kishibuchi, Kazuma Shimogami, Hirotaka Inoue, Kyohei Nasu, Tomohiro Nakagawa, Mitsuaki Maetani, Yuichiro Tanaka, Yasuhiko Hayashi, Hiroo Suzuki

    第60回 フラーレン・ナノチューブ・グラフェン総合シンポジウム  2021.3 

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  • One-dimensional growth of WS2 by chemical vapor deposition

    Kazuma Shimogami, Misaki Kishibuchi, Hirotaka Inoue, Liu Zheng, Yasumitsu Miyata, Yasuhiko Hayashi, Hiroo Suzuki

    第60回 フラーレン・ナノチューブ・グラフェン総合シンポジウム  2021.3 

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Awards

  • Young Scientist Award

    2018.3   The 53th FNTG Symposium   Wafer-scale integration of suspended graphene nanoribbons for non-volatile optical memory application

    Hiroo Suzuki

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  • 若手学会発表賞/

    2016.12   The Japan Society of Plasma Science and Nuclear Fusion Research/   Growth Mechanism of Suspended Graphene Nanoribbon by Rapid-Heating Plasma CVD and its Optoelectronic Device Application/

    Hiroo Suzuki

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  • Young Scientist Presentation Award (2016 Autumn meeting)/

    2016.9   The Japan society of Applied Physics (JSAP)/   Wafer-Scale Growth and High Density Integration of Suspended Graphene Nanoribbons Array/

    Hiroo Suzuki

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  • The 62nd JSAP Spring Meeting, 2015 Poster Award/

    2015.4   The Japan society of Applied Physics (JSAP)/   Growth mechanism of suspended graphene nanoribbon by plasma CVD/

    Hiroo Suzuki, Toshiaki Kato, Toshiro Kaneko

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  • Award for Encouragement of Research in the 24th Annual Meeting of MRSJ Symposium A/

    2015.1   The material research society of Japan (MRSJ)/   High yield synthesis of graphene nanoribbon by plasma CVD

    Hiroo Suzuki

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Research Projects

  • 一次元構造をもつ原子層半導体の合成と光電子物性解明

    Grant number:21K14497  2021.04 - 2023.03

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists  Grant-in-Aid for Early-Career Scientists

    鈴木 弘朗

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    Grant amount:\4680000 ( Direct expense: \3600000 、 Indirect expense:\1080000 )

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  • リモートコミュニケーションデバイス筐体のための高い耐環境性をもつ超強度カーボンナノチューブ紡績糸の開発

    2021.04 - 2022.03

    科学技術振興機構(JST)  研究成果最適展開支援プログラム(A-STEP) 

    鈴木 弘朗

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  • 半導体原子層物質のプラズマを用いた低温・高速合成

    2021.04 - 2022.03

    矢崎科学技術振興財団  2021年度 矢崎科学技術振興財団 研究助成 

    鈴木 弘朗

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  • プラズマ有機金属化学気相成長の3ゾーン化による二次元半導体の低温・高速成長

    2021.04 - 2022.02

    公益財団法人日本科学協会  2021年度 笹川科学研究助成 

    鈴木 弘朗

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  • 二次元半導体のプラズマを用いた成長促進効果の開拓と低温・高速合成

    2020.11 - 2021.11

    住友財団  2020年度住友財団基礎科学研究助成 

    鈴木 弘朗

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Class subject in charge

  • Technical Writing (2021academic year) Prophase  - その他

  • Technical Presentation (2021academic year) Late  - その他

  • Specific Research of Electronics and Information Systems Engineering (2021academic year) Year-round  - その他

  • Topics in Electronic and Information Systems Engineering (2021academic year) Prophase  - 金1,金2

  • Electrical and Communication Engineering Lab A (2021academic year) 1st and 2nd semester  - 水2,水3,水4,水5,水6

  • Electrical and Communication Engineering Lab B (2021academic year) 3rd and 4th semester  - 水2,水3,水4,水5,水6

  • Communication Network Engineering Lab II (2020academic year) 3rd and 4th semester  - 火3,火4,火5,火6,火7

  • Electrical and Communication Engineering Lab A (2020academic year) 1st and 2nd semester  - 水2,水3,水4,水5,水6

  • Electrical and Communication Engineering Lab C (2020academic year) 3rd and 4th semester  - 火3,火4,火5,火6,火7

  • Electrical and Communication Engineering Lab III (2020academic year) 3rd and 4th semester  - 火3,火4,火5,火6,火7

  • Electrical and Communication Engineering Lab I (2020academic year) 1st and 2nd semester  - 水2,水3,水4,水5,水6

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