論文 - 林　靖彦

MOCVD-GROWN SQWS ON SI WITH ALGAAS/ALGAP INTERMEDIATE LAYERS AND/OR THERMAL CYCLE ANNEALING - APPLICATION TO ROOM-TEMPERATURE CW LASERS 査読

T EGAWA, Y HAYASHI, T JIMBO, M UMENO

JOURNAL OF CRYSTAL GROWTH   115 ( 1-4 )   524 - 528   1991年12月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：ELSEVIER SCIENCE BV  

We have studied the heterointerfaces of single quantum wells (SQWs) and the characteristics of SQW lasers on Si grown with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) by the metalorganic chemical vapor deposition (MOCVD) technique, and compare them with those grown by the two-step growth technique. The surface morphology and the heterointerfaces of SQWs on Si substrates grown with AlGaAs/AlGaP ILs are smoother than those of the two-step-grown sample. This is caused by the two-dimensional growth of the AlGaAs/AlGaP ILs. Thermal cycle annealing is found to reduce the propagation of the dislocations into the GaAs layers on Si. Excellent lasting characteristics are obtained by the AlGaAs/AlGaP ILs, which are caused by the smooth heterointerfaces. It is shown that the AlGaAs/AlGaP ILs have played an important role in achieving smooth heterointerfaces and the excellent characteristics of the SQW laser on a Si substrate.

DOI： 10.1016/0022-0248(91)90798-A

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ROOM-TEMPERATURE CW OPERATION OF ALGAAS/GAAS SQW LASERS ON SI SUBSTRATES BY MOCVD USING ALGAAS/ALGAP INTERMEDIATE LAYERS 査読

T EGAWA, Y KOBAYASHI, Y HAYASHI, T SOGA, T JIMBO, M UMENO

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   29 ( 7 )   L1133 - L1135   1990年7月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：JAPAN SOC APPLIED PHYSICS  

DOI： 10.1143/JJAP.29.L1133

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その他リンク： http://orcid.org/0000-0002-4113-5548