研究者詳細 - 林　靖彦

論文 - 林　靖彦

分割表示 262 件中 221 - 240 件目／全件表示 >>

Synthesis and characterization of metal-filled carbon nanotubes by microwave plasma chemical vapor deposition 査読

Y Hayashi, T Tokunaga, S Toh, WJ Moon, K Kaneko

DIAMOND AND RELATED MATERIALS 14 ( 3-7 ) 790 - 793 2005年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE SA

A new type of palladium-based metal-filled carbon nanotubes (MF-CNTs) was fabricated and their characteristics were investigated. The MF-CNTs were grown on Pd/SiO2/Si substrates and Pd/Mo mesh by a microwave plasma-enhanced chemical vapor deposition method using CH4 and H-2 gasses with the technique of bias-enhanced growth method. The structure and composition of Pd-based MF-CNTs were thoroughly investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and Raman spectroscopy. TEM and EDS analyses showed that MF-CNTs were composed of thick cylindrical graphite walls, and filled with Pd metal inside their roots. Based on TEM characterizations, we proposed a fruitful description for the encapsulating mechanisms. (c) 2005 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.diamond.2004.12.008

その他リンク： http://orcid.org/0000-0002-4113-5548

Efficient nitrogen incorporation into amorphous carbon films by double beam method 査読

Y Hayashi, T Kamio, T Soga, K Kaneko, T Jimbo

DIAMOND AND RELATED MATERIALS 14 ( 3-7 ) 970 - 974 2005年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE SA

Conductivity of amorphous carbon (a-C) was successfully controlled by incorporation of nitrogen atoms using a double beam method (DBM), where both rf nitrogen radical and if methane plasma sources were controlled separately to optimize the nitrogen incorporation. The as-grown a-C is p-type with a conductivity of 10(-11) Omega cm and activation energy (E-a) of 333 meV The addition of nitrogen atoms under varying nitrogen flow rate from 0 to 2.0 seem caused the conductivity to reach 10(-4) Omega cm as maximum and E-a of 41 meV at 1.5 seem. The optical band gap is shown to vary only marginally from standard of the as-grown of a-C film (1.39 eV) to 1.45 eV by nitrogen incorporation. The depth profile of a secondary ion mass spectroscopy (STMS) shows that the uniform concentration of C and N in the films and the sharp interface between nitrogen doped and undoped regions from the doped/undoped sandwich-like a-C structure. Furthermore, the changes in the chemical structure and relative bond fractions as a function of nitrogen flow rate are reported based on the results of an X-ray photoelectron spectroscopy and a Raman spectroscopy. (c) 2005 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.diamond.2005.01.003

その他リンク： http://orcid.org/0000-0002-4113-5548

Facile fabrication method for p/n-type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C-60 fullerene 査読

Y Hayashi, H Kanamori, Yamada, I, A Takasu, S Takagi, K Kaneko

APPLIED PHYSICS LETTERS 86 ( 5 ) 1 - 3 2005年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER INST PHYSICS

We have demonstrated the solution-processed p- and n-type transports including ambipolar transport organic thin-film transistors (OTFTs), required for complementary thin-film integrated circuit technology, by. a facile method of blending the n-type C-60 and the p-type [poly2-methoxy-5-[2'-ethyl-hexyloxy]-1,4-phenylene vinylene] (MEH-PPV). The carrier transport of PPV-based thin-film field-effect transistors with various C60 compositions are investigated by using the field-effect gated structure. One of the important findings is that tunable electronic properties of OTFTs are achieved by controlling C60 composition using a simple and an inexpensive spin-cast technology. The mobility increases with increase in the C60 composition in both n- and p-type OTFTs. Temperature measurements on n-type OTFTs revealed that transport follows a thermally activated hopping transport model with small activation energy. (C) 2005 American Institute of Physics.

DOI： 10.1063/1.1861115

その他リンク： http://orcid.org/0000-0002-4113-5548

Development of new materials for solar cells in Nagoya Institute of Technology 査読

T Jimbo, T Soga, Y Hayashi

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 6 ( 1 ) 27 - 33 2005年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：IOP PUBLISHING LTD

Solar cells with high efficiency and low price have long been desired, however, the commercially available solar cells are still expensive and the efficiencies of them are not high enough yet. A tandem solar cell was fabricated to develop a high-efficiency solar cell, and amorphous carbon solar cells were fabricated to develop a low-price solar cell.
An AlGaAs/Si tandem solar cell was successfully fabricated by heteroepitaxial growth of AlGaAs on Si substrate. At first, a p-n junction was formed in Si substrate by the impurity diffusion method. Then, an AlGaAs p-n junction was grown by MOCVD. Since the AlGaAs p-n junction has a graded band gap emitter, the photo-excited minority carriers can be collected efficiently. The energy conversion efficiency of AlGaAs/Si tandem solar cell was 21.4% (AM0) in spite of large lattice mismatch and difference in thermal expansion coefficients between AlGaAs and Si.
Solar cells were fabricated by using amorphous carbon films deposited by Ion Beam Sputtering and Pulse Laser Deposition (PLD). The highest efficiency of 1.82% (AM0) was attained with a-C(IBS)/p-C(pyrolysis)/p-Si structure. Solar cells using a-C:H were also fabricated by PLD and Plasma CVD, and the efficiencies of them were 2.1% (AM1.5) and 0.04% (AM0), respectively.
Other research activities on solar cells in Nagoya Institute of Technology are briefly mentioned. (c) 2004 Elsevier Ltd. All rights reserved.

DOI： 10.1016/j.stam.2004.07.002

その他リンク： http://orcid.org/0000-0002-4113-5548

LPE法によるInGaP結晶成長のシミューション

諏澤寛源, 平松和政, 神保孝志, 曽我哲夫, 林靖彦

化学工学会研究発表講演要旨集 2005 606 - 606 2005年

Structural, optical and mechanical properties of nanostructure diamond synthesized by chemical vapor deposition 査読

Y Hayashi, T Soga

TRIBOLOGY INTERNATIONAL 37 ( 11-12 ) 965 - 974 2004年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCI LTD

Nanostructure diamond (NSD) films on Si substrate are prepared by microwave plasma enhanced chemical vapor deposition (MPECVD) using methane and hydrogen as the reactants with two-step negative substrate bias (SB). The dependencies of the NSD film morphology, grains, surface roughness, crystal and bonding structures and hardness on the negative SB at the bias-enhanced growth (BEG) step and substrate temperature during growth have been investigated by conducting atomic force microscopy (CAFM), X-ray diffraction (XRD), Raman spectroscopy and nanoindentation. The hardness of the NSD film is found to be as high as 80 GPa with CAFM average and root mean square roughness of 7 and 9 nm, respectively, under optimal negative SB at the BEG step. From the studies of substrate temperature effect, the hardness of the NSD film is as high as 70 GPa, with average and root mean square CAFM roughness of 9 and 11 nm, respectively, which were obtained at a substrate temperature of 500 degreesC. In both cases, the film hardness was found to be affected by the size of clusters, which are composed of many small NSD particles, the amount of NSD in an amorphous matrix as well as surface roughness. We also synthesized transparent NSD films by MPECVD under optimized single-step growth conditions on quartz substrates, which are scratched with several micrometers diamond powder. A hardness as high as 60 GPa and a maximum transmittance of 60% in the visible light region are achieved for an NSD coating of 1.0 mum thickness with small surface roughness. (C) 2004 Elsevier Ltd. All rights reserved.

DOI： 10.1016/j.triboint.2004.07.014

その他リンク： http://orcid.org/0000-0002-4113-5548

Synthesis of corn-shape carbon nanofibers on Si and Mo substrates by bias-enhanced microwave plasma chemical vapor deposition 査読

Y Hayashi, T Tokunaga, Y Yogata, S Toh, K Kaneko, T Soga, T Jimbo

DIAMOND AND RELATED MATERIALS 13 ( 4-8 ) 1198 - 1202 2004年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE SA

A new type of corn-shape carbon nanofibers (CCNFs) with metal-free tips was fabricated and their characteristics were investigated. The CCNFs were grown on Ni/SiO2/Si and Ni/Mo mesh substrates by a microwave plasma-enhanced chemical-vapor deposition method using CH4 and H-2 gases with the technique of bias enhanced growth method. Transmission electron microscopy and selected area electron diffraction show that CCNFs were composed of thick cylindrical pure graphite walls, and had nanometer-sized tips with roots. The tips' apex angles of CCNFs were dependent on the substrate temperature, as the cone angles of 20, 39 and 60degrees. (C) 2004 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.diamond.2004.01.020

その他リンク： http://orcid.org/0000-0002-4113-5548

Corn-shape carbon nanofibers with dense graphite synthesized by microwave plasma-enhanced chemical vapor deposition 査読

Y Hayashi, T Tokunaga, T Soga, T Jimbo, Y Yogata, S Toh, K Kaneko

APPLIED PHYSICS LETTERS 84 ( 15 ) 2886 - 2888 2004年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER INST PHYSICS

Corn-shape carbon nanofibers (CCNFs) with metal-free tips have been synthesized by a microwave plasma-enhanced chemical-vapor deposition method using CH4 and H-2 gasses. The CCNFs were grown on Ni/SiO2/Si and Ni/Mo mesh substrates using a bias-enhanced growth method, and they were analyzed by scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The cones are composed of cylindrical pure graphite sheets, and have nanometer-sized tips and roots. The tips' apex angles of CCNFs have cone angles of 20degrees, 39degrees, and 60degrees depending on the growth conditions such as substrate temperature. (C) 2004 American Institute of Physics.

DOI： 10.1063/1.1666998

その他リンク： http://orcid.org/0000-0002-4113-5548

Reaction of indium ate complexes with allylic compounds. Controlling S(N)2/S(N)2 ' selectivity by solvents 査読

Hirashita T, Hayashi Y, Mitsui K, Araki S

Tetrahedron Letters 45 ( 16 ) 3225 - 3228 2004年

Microstructure of metal-filled carbon nanotubes 査読

S Toh, K Kaneko, Y Hayashi, T Tokunaga, WJ Moon

JOURNAL OF ELECTRON MICROSCOPY 53 ( 2 ) 149 - 155 2004年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：OXFORD UNIV PRESS

Catalysts are usually required to produce carbon nanotubes (CNTs) and play important roles during the growth process. Any catalysts that remain after processing are expected to add extra properties and removal of the catalysts is usually required to achieve the original properties of CNTs. Recently, CNTs have been filled incidentally by catalysts, such as Pb, Sn, Ni and Bi. This has led to success in obtaining additional properties and a few models have been proposed to describe the encapsulating mechanisms. In the present study, CNTs were filled with palladium by a microwave plasma-assisted chemical vapor deposition method. Detailed structural and compositional investigations of these metal-filled CNTs were carried out by transmission electron microscopy to elucidate the growth mechanisms.

DOI： 10.1093/jmicro/53.2.149

その他リンク： http://orcid.org/0000-0002-4113-5548

Modification of the physical properties of chemical vapor-deposited nanostructure diamond by argon-hydrogen plasma surface treatment 査読

Y Hayashi, D Mori, T Soga, T Jimbo

PHYSICS OF THE SOLID STATE 46 ( 4 ) 733 - 737 2004年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER INST PHYSICS

Nanostructure diamond (NSD) film with a hardness as high as 70 GPa and an average surface roughness of 10 nm has been synthesized by the two-step negative substrate bias method combined with post-growth Ar-H-2 plasma irradiation. The Ar-H-2 plasma irradiation has been confirmed to improve the uniformity of grain size and shape and increase the hardness of the NSD film. (C) 2004 MAIK "Nauka / Interperiodica".

DOI： 10.1134/1.1711461

その他リンク： http://orcid.org/0000-0002-4113-5548

A photovoltaic cell from p-type boron-doped amorphous carbon film 査読

XM Tian, M Rusop, Y Hayashi, T Soga, T Jimbo, M Umeno

SOLAR ENERGY MATERIALS AND SOLAR CELLS 77 ( 1 ) 105 - 112 2003年4月

記述言語：英語出版者・発行元：ELSEVIER SCIENCE BV

Boron-doped amorphous carbon (a-C(B)) films,here prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of aC(B)/n-Si structure yielded an open-circuit voltage (V-oe) of 0.27 V and a short-circuit current density (J(sc)) of 2.2 mA/cm(2) under illumination (AM1.5 100mW/cm(2)). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53. respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

DOI： 10.1016/S0927-0248(02)00461-0

その他リンク： http://orcid.org/0000-0002-4113-5548

An approach for utilization of organic polymer as a sensitizer in solid-state cells 査読

PM Sirimanne, T Shirata, L Damodare, Y Hayashi, T Soga, T Jimbo

SOLAR ENERGY MATERIALS AND SOLAR CELLS 77 ( 1 ) 15 - 24 2003年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE BV

A solid-state cell,vas fabricated by sand viching poly[2-methox,-5(2'-ethyl-hexyloxy)-p-phenylene vinylene] (MEH-PPV) in between micro-porous n-TiO2 and p-CuI films. The photo-excited polymer is found inject electrons into the conduction band of n-TiO2 and holes into the valance band of p-Cul. Maximum open-circuit voltage of 400 mV and short-circuit current of about 0.3 mA cm(-2) were observed for the TiO2\MEH-PPV\Cul cell, under white light illumination (100mW cm(-2)). (C) 2002 Elsevier Science B.V. All rights reserved.

DOI： 10.1016/S0927-0248(02)00241-6

その他リンク： http://orcid.org/0000-0002-4113-5548

Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by rf plasma-enhanced CVD using trimethylboron 査読

Y Hayashi, S Ishikawa, T Soga, M Umeno, Jimbo, I

DIAMOND AND RELATED MATERIALS 12 ( 3-7 ) 687 - 690 2003年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE SA

An attempt has been made on the device fabrication with boron-doped hydrogenated amorphous carbon (a-C:H) thin film deposited on n-type Si (100) by r.f. plasma-enhanced CVD. In order to identify the optimal doping condition, the various CH4 partial pressure has been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film. The photovoltaic properties of the a-C:H based heterojunction solar cell structures are discussed with the dark and illuminated J-V as well as optical properties of boron-doped a-C:H film. (C) 2003 Elsevier Science B.V. All rights reserved.

DOI： 10.1016/S0925-9635(03)00031-1

Photovoltaic properties of boron-incorporated amorphous carbon on n-Si heterojunction grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron 査読

Y Hayashi, T Soga, T Jimbo

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42 ( 3B ) L273 - L276 2003年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：INST PURE APPLIED PHYSICS

Boron-incorporated hydrogenated amorphous carbon (a-C:H) thin film, which is thought to be promising for p-type conductivity, on n-type Si(100) heterojunction photovoltaic devices has been grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron. In order to identify the effect of boron incorporation, various CH4 partial pressures have been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% under 100 mW/cm(2) have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-incorporated a-C:H film. The photovoltaic properties of the a-C:H-based heterojunction solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as the optical properties of boron-incorporated a-C:H film. The possibility of improving the conversion efficiency is also discussed.

DOI： 10.1143/JJAP.42.L273

その他リンク： http://orcid.org/0000-0002-4113-5548

Photovoltaic cells based on boron-doped amorphous carbon on n-Si prepared by rf plasma-enhanced chemical vapor deposition using trimethylboron 査読

Y Hayashi, T Soga, T Jimbo

PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C A 151 - 154 2003年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：WCPEC-3 ORGANIZING COMMITTEE

Photovoltaic cells based on boron-doped p-type amorphous carbon on n-Si have been synthesized by rf plasma-enhanced CVD using trimethylboron (TMB). In order to identify the optimal doping condition, various TMB/CH4 flow ratios have been investigated. A p-type a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.007 % have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film based on the optical gap measured by UV-visible spectroscopy. The photovoltaic properties of the a-C:H based solar cell structures are discussed with the dark and illuminated current density-voltage characteristics (efficiency, short-circuit current, open-circuit voltage, fill factor and series resistance) as well as optical properties of boron-doped a-C:H film characterized by UV-visible spectroscopy.

その他リンク： http://orcid.org/0000-0002-4113-5548

Photovoltaic properties of boron-doped amorphous carbon on n-Si with C-60 intermediate layer deposited by rf nitrogen plasma co-sputtering of graphite and boron 査読

Y Hayashi, T Soga, T Jimbo

PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C A 144 - 147 2003年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：WCPEC-3 ORGANIZING COMMITTEE

Photovoltaic cells based on boron-doped amorphous carbon on n-Si with C-60 intermediate thin layer between them have deposited by rf nitrogen plasma co-sputtering of graphite and boron targets in a UHV chamber. In order to identify the effect of rf input power of graphite sputtering, the rf power was varied between 15 W and 100 W by keeping that of boron was constant at 300 W. A p-type a-C/C-60/n-Si heterojunction solar cells with conversion efficiency as high as 0.00015 % have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 400 nm and 700 nm are determined to be due to the optical absorption of the borondoped a-C and C-60 layers, respectively, based on the absorption peaks measured by UV-visible spectroscopy. The photovoltaic properties of the a-C based solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as optical properties of boron-doped a-C film.

その他リンク： http://orcid.org/0000-0002-4113-5548

Boron-incorporated amorphous carbon films deposited by pulsed laser deposition 査読

XM Tian, M Rusop, Y Hayashi, T Soga, T Jimbo, M Umeno

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41 ( 9A-B ) L970 - L973 2002年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：INST PURE APPLIED PHYSICS

Boron-incorporated carbon films (a-C(B)) were deposited on a silicon substrate by pulsed laser deposition (PLD) of a graphite target at room temperature. The boron content was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 at.% in the films. These films were confirmed to be p-type due to the formation of a heterojunction between the a-C(B) carbon film and silicon substrate. The devices of C(B)/n-Si configuration show a maximum [open-circuit voltage] V-oc = 0.25 V, and [short-circuit current density] J(sc) = 2.1 mA/cm(2) under illumination (AM 1.5, 100 mW/cm(2)).

DOI： 10.1143/JJAP.41.L970

その他リンク： http://orcid.org/0000-0002-4113-5548

Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation 査読

Y Hayashi, Y Matsushita, T Soga, M Umeno, T Jimbo

JOURNAL OF APPLIED PHYSICS 91 ( 12 ) 9752 - 9756 2002年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER INST PHYSICS

The initial nucleation of diamond film on a Si substrate, deposited by a three-step growth process together with a cycle bias enhanced nucleation (BEN) growth/H-2 plasma etching technique in a microwave plasma enhanced chemical vapor deposition system has been investigated by atomic force microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. The surface morphology and the uniformity of {100}-oriented textured grains at the BEN step were found to be greatly increased by applying the cyclic process with some optimal H-2 plasma etching time during the BEN stage. (C) 2002 American Institute of Physics.

DOI： 10.1063/1.1480116

その他リンク： http://orcid.org/0000-0002-4113-5548

Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxy 査読

S Saravanan, Y Hayashi, T Soga, T Jimbo, M Umeno, N Sato, T Yonehara

JOURNAL OF CRYSTAL GROWTH 237 ( 1-4 II ) 1450 - 1454 2002年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE BV

In order to reduce the residual thermal stress in GaAs layer on Si substrate, we have introduced a porous region and a thin (similar to 10 nm) Si layer over that in between GaAs and Si substrate. A 1-mum-thick undoped GaAs layers were grown by using chemical beam epitaxial technique at different temperatures. Because of the presence of porous region the morphology of the grown layers was slightly rough. Photolumineseence improvement and reduction of surface roughness have been achieved by chemical mechanical polishing (CMP). The ex situ non-contact optical interferometer observation shows that the rms roughness values of GaAs epilayer after CMP is 4.6 nm, whereas the as-grown is 9.5 nm, From the result of low-temperature photoluminescence, it was found that a significant reduction of the biaxial tensile stress has been achieved. The results prove that the growth of GaAs on Si substrate with intermediate porous region is a promising approach for obtaining GaAs epilayers with less biaxial tensile stress. (C) 2002 Elsevier Science B.V. All rights reserved.

DOI： 10.1016/S0022-0248(01)02287-4

その他リンク： http://orcid.org/0000-0002-4113-5548

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