Faculty Profiles - GOTO Hidenori

MISC - GOTO Hidenori

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フェナセン系薄膜電界効果トランジスタのデバイス構造の改変による伝導特性制御と論理回路応用

三上隆弘, 下侑馬, 浜尾志乃, 江口律子, 後藤秀徳, 岡本秀毅, 久保園芳博, 林靖彦

応用物理・物理系学会中国四国支部合同学術講演会講演予稿集 2015 2015

18aDB-9 Syntheses of new superconductors, M_xFeSe_<1-z>Te_z, M_xMo(Se_<1-z>Te_z)_2 and M_xW(Se_<1-z>Te_z)_2

Miao Xiao, Zheng Lu, Nishiyama Saki, Goto Hidenori, Eguchi Ritsuko, Ota Hiromichi, Kubozono Yoshihiro

Meeting Abstracts of the Physical Society of Japan 70 1995 - 1995 2015

16pDA-4 Syntheses of superconducting M_xLnOBiS_2(M: alkali metal atom, Ln: lanthanide atom)

Nishiyama S., Uesugi E., Goto H., Eguchi R., Kubozono Y.

Meeting Abstracts of the Physical Society of Japan 70 1718 - 1718 2015

16pDA-5 Electric properties of two-dimensional layered materials controlled by electrostatic carrier doping

Uesugi E., Miao Xiao, Nishiyama S., Eguchi R., Goto H., Kubozono Y.

Meeting Abstracts of the Physical Society of Japan 70 1719 - 1719 2015

18aDB-8 High-T_c phase of (NH_3)_yNa_xFeSe_<0.5>Te_<0.5>

Zheng Lu, Miao Xiao, Eguchi Ritsuko, Goto Hidenori, Kubozono Yoshihiro

Meeting Abstracts of the Physical Society of Japan 70 1994 - 1994 2015

9pBJ-11 Electrical resistivity measurements of vacuum-evaporated K-doped picene films

Hamada T., Jabuchi T., Okazaki H., Wakita T., Kambe T., Goto H., Kubozono H., Muraoka Y., Yokoya T.

Meeting abstracts of the Physical Society of Japan 69 ( 2 ) 444 - 444 2014.8

7aAL-1 Resistivity behavior in 7 K superconductivity phase of K_xpicene under high pressure

Nguyen Huyen, Izumi Masanari, Sakai Yusuke, Lu Zheng, Goto Hidenori, Kubozono Yoshihiro, Sakata Masafumi, Kagayama Tomoko, Shimizu Katsuya

Meeting abstracts of the Physical Society of Japan 69 ( 2 ) 593 - 593 2014.8

8aAH-1 Electronic properties of graphenes doped with electron acceptor/donor molecules II

Akiyoshi Hidehiko, Goto Hidenori, Uesugi Eri, Hamao Shino, Eguchi Ritsuko, Kubozono Yoshihiro, Yoshida Yukihiro, Saito Gunzi

Meeting abstracts of the Physical Society of Japan 69 ( 2 ) 600 - 600 2014.8

7pBD-7 Metal doped M_xSe_<1-z>Te_z (M=Fe, Mo, Zn, W) Superconductors Prepared Using Liquid NH_3 Technique

Sakai Yusuke, Lu Zheng, Uesugi Eri, Nishiyama Saki, Izumi Masanari, Goto Hidenori, Noji Takashi, Koike Yoji, Kubozono Yoshihiro

Meeting abstracts of the Physical Society of Japan 69 ( 2 ) 335 - 335 2014.8

10aBH-12 Carrier doping to two- and three-dimensional Bi compounds

Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Noji Takashi, Koike Yoji, Kubozono Yoshihiro

Meeting abstracts of the Physical Society of Japan 69 ( 2 ) 455 - 455 2014.8

7pBD-8 Structure study on (NH_3)yM_xFeSe : a correlation between T_c and structure (chemical composition, metal amount and NH_3 amount)

Zheng Lu, Sakai Yusuke, Izumi Masanari, Nishiyama Saki, Uesugi Eri, Goto Hidenori, Kubozono Yoshihiro

Meeting abstracts of the Physical Society of Japan 69 ( 2 ) 336 - 336 2014.8

Fabrication and characterization of picene-thin-film electric-double-layer transistors

Shimo Yuma, Goto Hidenori, Kubozono Yoshihiro, Hayashi Yasuhiko

IEICE technical report. Electron devices 114 ( 12 ) 31 - 34 2014.4

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

Electric-double-layer (EDL) field-effect transistors are fabricated with thin films of picene, in order to reduce the operation voltage. We used two types of ionic liquids for the picene-thin-film EDL FET (EDLT). One is ionic liquid gel, which provides the absolute threshold voltage (|V_<th>|) as low as 1.87V, while the other is ionic liquid polymer sheet which provides the |V_<th>| as low as 0.87V. The small |V_<th>| values in these EDLTs are available for practical electronic devices, which may lead to the new development for integration of organic transistors

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Study on organic transistors with [6]phenacene

MIKAMI Takahiro, GOTO Hidenori, KUBOZONO Yoshihiro, HAYASHI Yasuhiko

IEICE technical report. Electron devices 114 ( 12 ) 35 - 39 2014.4

Language：Japanese Publisher：The Institute of Electronics, Information and Communication Engineers

The [6]phenacene molecule consists of six benzene rings and takes a W-shaped structure. It is well known that [6]phenacene field-effect transistor (FET) shows an excellent p-channel FET characteristics. However, the organic FET device has a serious problem that the absolute threshold voltage (|V_<th>|) is too high. Actually, the [6]phenacene thin film FET has such a serious problem. Here we tried to insert either electron acceptor or donor in the interface between [6]phenacene thin film and SiO_2 gate dielectric in order to decrease the |V_<th>|. In this study, we used diverse electron acceptors and donors, and the variation of |V_<th>| was systematically investigated, showing the V_<th>-shift of 30V in some electron acceptors. Furthermore, the drastic change of mobility (μ) in [6]phenacene FET was observed depending on the hydrophobic treatment of surface of SiO_2 gate dielectric, showing the μ value increased up to 5.0cm^2V^<-1>s^<-1> by the hydrophobic treatment with hexamethyldisilazane (HMDS).

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27pCE-2 Metal doped FeSe_<1-x>Te_x(x = 0.2, 0.5, 0.7) Superconductors Prepared Using Liquid NH_3 Technique

Sakai Yusuke, Izumi Masanari, Lu Zheng, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

Meeting abstracts of the Physical Society of Japan 69 ( 1 ) 561 - 561 2014.3

27pCE-3 Superconductivity in ammoniated metal-intercalated two-dimensional layered materials

Zheng Lu, Sakai Yusuke, Izumi Masanari, Eguchi Ritsuko, Goto Hidenori, Kubozono Yoshihiro

Meeting abstracts of the Physical Society of Japan 69 ( 1 ) 561 - 561 2014.3

27aCG-10 Field-effect control of electronic properties in inorganic and organic layered-materials

Uesugi E., Senda M., Teranishi K., Eguchi R., Goto H., Noji T, Koike Y., Kubozono Y.

Meeting abstracts of the Physical Society of Japan 69 ( 1 ) 548 - 548 2014.3

27pCL-5 Electronic properties of graphene doped by electron acceptor/donor molecules

Akiyoshi Hidehiko, Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

Meeting abstracts of the Physical Society of Japan 69 ( 1 ) 835 - 835 2014.3

27pCE-4 Pressure Dependence of (NH_3)_yFeSe_<1-x>Te_x Prepared Using Liquid NH3 Technique

Izumi M., Fujiwara Akihiko, Kim Jungeun, Sun Liling, Kubozono Y., Sakai Y., Zheng Lu, Goto H., Eguchi R., Sakata M., Kobayashi T. C., Araki S., Onji T.

Meeting Abstracts of the Physical Society of Japan 69 ( 0 ) 561 - 561 2014

7aAL-2 Pressure-doping of potassium into picene and its superconductivity

Kagayama T, NGUYEN Huyen, Fujii Y, Shimizu K, Sakata M, Goto H, Kubozono Y

Meeting Abstracts of the Physical Society of Japan 69 ( 0 ) 593 - 593 2014

7pBD-9 Emergence of High-T_c Superconducting Phase in (NH_3)_yCs_<0.4>FeSe under high pressure

Izumi M, Araki S, Kobayashi T. C, Prassides Kosmas, Sun Liling, Kubozono Y, Sakata M, Sakai Y, Zheng Lu, Goto H, Nakamoto Y, Kagayama T, Shimizu K, Onji T

Meeting Abstracts of the Physical Society of Japan 69 ( 0 ) 336 - 336 2014

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