論文 - 山下　善文

Structure and Stress-Induced Aligmnent of a Hydrogen-Carbon Complex in Silicon.

Kamiura Yoichi, Ishiga Nobuaki, Yamashita Yoshifumi

Japanese Journal of Applied Physics   36 ( 11A )   L1419-L1421 - L1421   1997年

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記述言語：英語   出版者・発行元：公益社団法人 応用物理学会  

We applied deep-level transient spectroscopy (DLTS) under uniaxial stress to study the structure and bonding nature of a hydrogen-carbon (H-C) complex in Si. The application of <111> and <110> compressive stresses split the DLTS peak into two as ratios of 1:3 and 2:2, respectively, which were the ratios of the low-temperature peak to the high-temperature peak. No splitting was observed under the <100> stress. These results indicate the trigonal symmetry of the H-C complex and the anti-bonding nature of its electronic state. We observed a stress-induced alignment of the complex at 250K for 50 min under a <110> stress of 1 GPa.

DOI： 10.1143/jjap.36.L1419

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Effects of hydrogen plasma on dislocation motion in silicon

Y. Yamashita, F. Jyobe, Y. Kamiura, K. Maeda

Materials Science Forum   258-263 ( 1 )   313 - 318   1997年

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Trans Tech Publications Ltd  

We have measured the velocity of dislocation glide motion in phosphorus-doped FZ-silicon during hydrogen plasma irradiation, and, have found for the first time that the velocity was drastically promoted under hydrogen plasma by a factor of 10 to 100 in the temperature range of 390-480°C, and the activation energy of dislocation motion was reduced to 1.2eV from the value 2.3eV, in the dark. We exclude the possibility that the observed phenomenon is due to so called radiation-enhanced dislocation glide induced by plasma light, since no enhancement of dislocation motion occurred at all under nitrogen plasma with the same light intensity as hydrogen plasma, and hydrogen plasma irradiation with covers to prevent light exposure promoted dislocation motion as well. In addition, it is confirmed by spreading resistance measurements that hydrogen atoms were actually incorporated up to about 10 μm beneath the surface to passivate boron. This assures us that hydrogen atoms were incorporated to enough depths at the temperatures where dislocation velocity was measured. These results clearly indicate that hydrogen itself enhances dislocation motion. Some discussions are made on the enhancement mechanisms of dislocation motion.

DOI： 10.4028/www.scientific.net/msf.258-263.313

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