Faculty Profiles - YAMASHITA Yoshifumi

Presentations -

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Reverse-bias effects of metal-related levels in mc-Si for solar cells studied by isothermal DLTS International conference

Kiichiro Tagawa, Yuta Miyabe, Keishi Yasuda, Yoshifumi Yamashita, Takeshi Nishikawa, Masaki Hada, Yasuhiko Hayashi

The 8th Forum on the Science and Technology of Silicon Materials 2018 2018.11.19

時間分解電子線回折法を用いたEuBaCo₂O_5.38の構造ダイナミクス計測

羽田真毅, 鈴木達也, 阿部伸行, 有馬孝尚, 沖本洋一, 腰原伸也, 慶尾直哉, 村上寛虎, 西川亘, 山下善文, 林靖彦, 横谷尚睦, 松尾二郎, 浅香透

日本物理学会講演概要集 2017.1 一般社団法人日本物理学会

10aAE-4 Threading dislocation motion in Sb-doped SiGe thin films with various Ge content

Yamashita Yoshifumi, Maki Shinya, Fushimi Tatsuya, Ohno Yutaka, Yonenaga Ichiro, Nishikawa Takeshi, Hayashi Yasuhiko

Meeting abstracts of the Physical Society of Japan 2014.8.22 The Physical Society of Japan (JPS)

28pAM-12 Partial dislocation motion in 4H-SiC with/without electron beam irradiation

Yamashita Yoshifumi, Shimomura Takuya, Fujii Yuji, Nishikawa Takeshi, Hayashi Yasuhiko

Meeting abstracts of the Physical Society of Japan 2014.3.5 The Physical Society of Japan (JPS)

24pCD-7 Effects of Sb doping on dislocation motion in SiGe thin films on Si substrate

Yamashita Yoshifumi, Funaki Toru, Matsunaga Takuya, Tanemoto Kan, Fushimi Tatsuya, Kamiura Yoichi, Ishiyama Takeshi

Meeting abstracts of the Physical Society of Japan 2012.3.5 The Physical Society of Japan (JPS)

Si quantum wells by thermal oxidation and Er-doped structures

OSAKI Ryusuke, ISHIKAWA Yasuhiko, YAMASHITA Yoshifumi, KAMIURA Yoichi, WADA Kazumi

IEICE technical report 2008.12.12 The Institute of Electronics, Information and Communication Engineers

Event date： 2008.12.12

Language：Japanese

Er-doped Si has attracted much attention as a possible candidate for 1.5μm light-emitting material in silicon photonics. However, there has been a problem of the strong luminescence quenching toward higher temperatures. In this work, we propose a method for effective light emition from Er-doped Si using quantum well structures. The fabrication process using thermal oxidation of silicon-on-insulator (SOI) later is also described.

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21pYM-1 Energy change due to uniaxial stress for the Pt-H_2 defect in Si

Sato Kimihiro, Kamiura Yoichi, Yamashita Yoshifumi, Ishiyama Takeshi

Meeting abstracts of the Physical Society of Japan 2005.8.19 The Physical Society of Japan (JPS)

21pYM-3 Hydrogen Enhanced Strain Relaxation of a GeSi film on Ge Substrate

Yamashita Y., Nakagawa R., Sakamoto Y., Dewa T., Ishiyama T., Kamiura Y.

Meeting abstracts of the Physical Society of Japan 2005.8.19 The Physical Society of Japan (JPS)

27aYM-5 Enhancing effect of strain on photoluminescence of Er in Si and SiGe layers

Ishiyama T., Kamiura Y., Yoneyama S., Yamashita Y.

Meeting abstracts of the Physical Society of Japan 2005.3.4 The Physical Society of Japan (JPS)

15aTJ-7 Relaxation Process of Stress-induced Reorientation of Pt-H_2 Defect in Si (I)

Namula Bao, Sato K., Kamiura Y., Yamashita Y., Ishiyama T.

Meeting abstracts of the Physical Society of Japan 2004.8.25 The Physical Society of Japan (JPS)

Effects of hydrogen treatment on electric property of SiGe films on p-Si substrate

Yamashita Y., Miyasako T., Ishiyama T., Kamiura Y.

Meeting abstracts of the Physical Society of Japan 2003.8.15 The Physical Society of Japan (JPS)

Effects of Hydrogen on Boron Motion in p-Si substrate and SiGe epi-films

Yamashita Y., Miyasako T., Toshiyuki T., Kamiura Y., Ishiyama T.

Meeting abstracts of the Physical Society of Japan 2003.3.6 The Physical Society of Japan (JPS)

Symmetry of the Pt-H2 complex and the local motion of H around Pt in Si

Kamiura Y., Iwagami Y., Yamashita Y., Ishiyama T., Tokuda Y.

Meeting abstracts of the Physical Society of Japan 2002.8.13 The Physical Society of Japan (JPS)

Structure and electronic state of a defect related to platinum and hydrogen in silicon

Fukuda K., Iwagami Y., Kamiura Y., Yamashita Y., Ishiyama T.

Meeting abstracts of the Physical Society of Japan 2001.9.3 The Physical Society of Japan (JPS)

Enhancing Effects of Hydrogen on Recovery of Implantation-Induced Defects by Phosphorus Ion in Silicon

Kamiura Y., Yamashita Y., Yamamoto Y., Ishiyama T.

Meeting abstracts of the Physical Society of Japan 2001.3.9 The Physical Society of Japan (JPS)

Effect of Uniaxial Stress on the Electronic State of the H-C complex in Silicon

Fukuda K., Kamiura Y., Yamashita Y., Ishiyama T.

Meeting abstracts of the Physical Society of Japan 2000.3.10 The Physical Society of Japan (JPS)

Effects of Electronic Excitation on the Dissociation of the Mg-H Complex in GaN

KAMIURA Y., YAMASHITA Y., NAKAMURA S.

Meeting abstracts of the Physical Society of Japan 1998.9.5 The Physical Society of Japan (JPS)

8p-S-2 Annihilation Process of Thermal Donors in Silicon

Kamiura Y., Takeuchi Y., Yamashita Y.

Meeting abstracts of the Physical Society of Japan 1997.9.16 The Physical Society of Japan (JPS)

28a-P-8 The spatial variation of STM tunneling current noise

Tukita S, Uota M, Yamashita Y, Uchida K, Mera Y, Maeda K

Abstracts of the meeting of the Physical Society of Japan. Annual meeting 1994.3.16 The Physical Society of Japan (JPS)

14p-DH-4 The origin of 1/f fluctuations in STM tunneling current.

Sugita S., Uchida S., Hinomaru M., Uota M., Yamashita Y., Mera Y., Maeda K.

Abstracts of the meeting of the Physical Society of Japan. Sectional meeting 1993.9.20 The Physical Society of Japan (JPS)

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