研究者詳細 - 横谷　尚睦

論文 - 横谷　尚睦

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Translational Symmetry Breaking and Gapping of Heavy-Quasiparticle Pocket in URu 2 Si 2 査読

Rikiya Yoshida, Koji Tsubota, Toshihiko Ishiga, Masanori Sunagawa, Jyunki Sonoyama, Dai Aoki, Jacques Flouquet, Takanori Wakita, Yuji Muraoka, Takayoshi Yokoya

Scientific Reports 3 2013年

記述言語：英語掲載種別：研究論文（学術雑誌）

URu 2 Si 2 is a uranium compound that exhibits a so-called 'hidden-order' transition at ∼17.5â€...K. However, the order parameter of this second-order transition as well as many of its microscopic properties remain unclarified despite considerable research. One of the key questions in this regard concerns the type of spontaneous symmetry breaking occurring at the transition
although rotational symmetry breaking has been detected, it is not clear whether another type of symmetry breaking also occurs. Another key question concerns the property of Fermi-surface gapping in the momentum space. Here we address these key questions by a momentum-dependent observation of electronic states at the transition employing ultrahigh-resolution three-dimensional angle-resolved photoemission spectroscopy. Our results provide compelling evidence of the spontaneous breaking of the lattice's translational symmetry and particle-hole asymmetric gapping of a heavy quasiparticle pocket at the transition.

DOI： 10.1038/srep02750

Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex 査読

Takayoshi Yokoya, Rikiya Yoshida, Yuki Utsumi, Koji Tsubota, Hiroyuki Okazaki, Takanori Wakita, Yoshikazu Mizuguchi, Yoshihiko Takano, Takayuki Muro, Yukako Kato, Hiroshi Kumigashira, Masaharu Oshima, Hisatomo Harima, Yoshihiro Aiura, Hitoshi Sato, Akihiro Ino, Hirofumi Namatame, Masaki Taniguchi, Masaaki Hirai, Yuji Muraoka

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 13 ( 5 ) 2012年10月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：NATL INST MATERIALS SCIENCE

We have characterized the electronic structure of FeSe1-xTex for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E-F): its splitting near EF and filling of the pseudogap in FeSe. IPES shows two features, near E-F and approximately 6 eV above E-F; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near E-F for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.

DOI： 10.1088/1468-6996/13/5/054403

Comparative photoemission studies on the superconducting gap of the filled skutterudite superconductors LaPt4Ge12 and PrPt4Ge12 査読

Yoshiaki Nakamura, Hiroyuki Okazaki, Rikiya Yoshida, Takanori Wakita, Hiroyuki Takeya, Kazuto Hirata, Masaaki Hirai, Yuji Muraoka, Takayoshi Yokoya

PHYSICAL REVIEW B 86 ( 1 ) 2012年7月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER PHYSICAL SOC

We performed a comparative study of the superconducting gap in the new filled skutterudite superconductors LaPt4Ge12 and PrPt4Ge12 using high-resolution photoemission spectroscopy. We succeeded in observing spectral changes across T-c that reflect the opening of the superconducting gap in both compounds and also in observing a noticeable difference in their respective superconducting spectral shapes near the Fermi level, pointing toward a more complex superconducting gap structure in PrPt4Ge12. In addition, we found that the two-gap model is more suitable for describing the superconducting-state spectrum of PrPt4Ge12 than the single-isotropic-gap and single-anisotropic-gap models, which suggests an explanation that multiband effects may possibly induce the anomalous superconducting properties of PrPt4Ge12.

DOI： 10.1103/PhysRevB.86.014521

Observation of two fine structures related to the hidden order in the spectral functions of URu2Si2 査読

Rikiya Yoshida, Masaki Fukui, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Onuki, Mario Okawa, Walid Malaeb, Shik Shin, Yuji Muraoka, Takayoshi Yokoya

PHYSICAL REVIEW B 85 ( 24 ) 2012年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER PHYSICAL SOC

We studied the spectral functions of URu2Si2 in the hidden-order state by means of ultrahigh-resolution angle-resolved photoemission spectroscopy. High signal-to-noise ratio data uncover the existence of two anomalous fine structures, namely a "splitting" in the previously reported narrow dispersive band, and a small, dispersionless "satellite" structure. These structures can be explained by neither ordinary bands nor the development of a hybridization of two states; thus our observation should evoke the consideration of complicated many-body effects. As a possible origin, we suggest the existence of electron-mode coupling in the ordered state.

DOI： 10.1103/PhysRevB.85.241102

Observation of two fine structures related to the hidden order in the spectral functions of URu2Si2 査読

Rikiya Yoshida, Masaki Fukui, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Onuki, Mario Okawa, Walid Malaeb, Shik Shin, Yuji Muraoka, Takayoshi Yokoya

Physical Review B 85 ( 24 ) 241102 2012年6月

Effectiveness of a hot-filament chemical vapor deposition method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature 査読

T. Doi, T. Fukaishi, C. Hiramatsu, T. Wakita, M. Hirai, Y. Muraoka, T. Yokoya, Y. Kato, Y. Izumi, T. Muro, Y. Tamenori

DIAMOND AND RELATED MATERIALS 25 5 - 7 2012年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE SA

We have investigated the effectiveness of a hot-filament chemical vapor deposition (HFCVD) method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature (T-c). A boron-doped superconducting diamond film has been fabricated on a diamond (111) substrate using the HFCVD method, and studied by means of scanning electron microscopy. X-ray photoelectron spectroscopy (XPS), and resistivity. The film consists of grains with an average size of 200 mm. Analyses of valence band and boron Is core-level XPS spectra indicate the formation of boron-doped diamond film on the substrate. From the resistivity measurements, the film is found to be a superconductor with onset T-c of 7.1 K. Carrier concentration determined by Hall conductivity measurements is 1.1 x 10(21) cm(-3). The value of T-c is higher compared with that in boron-doped superconducting diamond films prepared by a commonly used microwave plasma-assisted chemical vapor deposition (MPCVD) method, at the same carrier concentration [A. Kawano et al., Phys. Rev. B 82 (2010) 085318]. The result of higher T-c in the film by the HFCVD method is consistent with the previous one [Wang et al., Diamond Relat. Mater. 15 (2006) 659], suggesting that the HFCVD method is effective for preparation of boron-doped superconducting diamond films showing higher T-c. (C) 2012 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.diamond.2012.02.008

Development of a soft X-ray angle-resolved photoemission system applicable to 100 mu m crystals 査読

Takayuki Muro, Yukako Kato, Tomohiro Matsushita, Toyohiko Kinoshita, Yoshio Watanabe, Hiroyuki Okazaki, Takayoshi Yokoya, Akira Sekiyama, Shigemasa Suga

JOURNAL OF SYNCHROTRON RADIATION 18 879 - 884 2011年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：WILEY-BLACKWELL

A system for angle-resolved photoemission spectroscopy (ARPES) of small single crystals with sizes down to 100 mm has been developed. Soft X-ray synchrotron radiation with a spot size of similar to 40 mu m x 65 mu m at the sample position is used for the excitation. Using this system an ARPES measurement has been performed on a Si crystal of size 120 mu m x 100 mu m x 80 mu m. The crystal was properly oriented on a sample stage by measuring the Laue spots. The crystal was cleaved in situ with a microcleaver at 100 K. The cleaved surface was adjusted to the beam spot using an optical microscope. Consequently, clear band dispersions along the Gamma-X direction reflecting the bulk electronic states were observed with a photon energy of 879 eV.

DOI： 10.1107/S0909049511034418

Photoemission Study of Rh17S15 Superconductor 査読

Masaki Fukui, Rikiya Yoshida, Yoshiaki Nakamura, Yukako Kato, Takayuki Muro, Rikio Settai, Yoshichika Onuki, Hisatomo Harima, Masaaki Hirai, Yuji Muraoka, Takayoshi Yokoya

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 80 2011年7月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：PHYSICAL SOC JAPAN

We have investigated the electronic structures of Rh17S15 by using soft x-ray photoemission spectroscopy and first principle band structure calculations. While S 2p core level spectra are explained by symmetric components, Rh 3d core level exhibits asymmetric line shape, suggesting a dominant Rh 4d character at the states near the Fermi level. The binding energy of Rh 4d in Rh17S15 is similar to the one in Rh metal, and this observation implies metallic Rh-Rh bonding. Many features in experimental valence spectra are reasonably described by the calculations, indicating that one particle approximation is a good starting point to understand the electronic properties of Rh17S15. The comparison between the experiment and the calculation suggests that Rh 4d character at the states near the Fermi level is essential for the correlated superconductivity in Rh17S15. However, some deviation between the experiment and the calculation as well as a finite mass enhancement are found, indicating some corrections on the treatment of electron-phonon coupling and/or electron correlations are necessary.

DOI： 10.1143/JPSJS.80SA.SA111

Ultrahigh-resolution laser photoemission study of URu2Si2 across the hidden-order transition 査読

Rikiya Yoshida, Yoshiaki Nakamura, Masaki Fukui, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Onuki, Mario Okawa, Shik Shin, Masaaki Hirai, Yuji Muraoka, Takayoshi Yokoya

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 72 ( 5 ) 580 - 581 2011年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：PERGAMON-ELSEVIER SCIENCE LTD

We have studied the electronic structures of URu2Si2 employing ultrahigh-resolution laser angle-resolved photoemission spectroscopy. The change of photoemission spectra is investigated across the hidden-order transition, and the emergence of a narrow band is clearly observed near the Fermi level for both (pi,0) and (pi,pi) directions. In addition, it is shown that tuning of light's polarization allows the signal of a hole-like dispersive feature to enhance. These observations prove that laser angle-resolved photoemission spectroscopy is an effective tool for studying the evolution of electronic structures across the hidden-order transition in URu2Si2. (C) 2010 Elsevier Ltd. All rights reserved.

DOI： 10.1016/j.jpcs.2010.10.048

Photoemission study of electronic structure evolution across the metal-insulator transition of heavily B-doped diamond 査読

H. Okazaki, T. Arakane, K. Sugawara, T. Sato, T. Takahashi, T. Wakita, M. Hirai, Y. Muraoka, Y. Takano, S. Ishii, S. Iriyama, H. Kawarada, T. Yokoya

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 72 ( 5 ) 582 - 584 2011年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：PERGAMON-ELSEVIER SCIENCE LTD

We studied the electronic structure evolution of heavily B-doped diamond films across the metal-insulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From high-temperature UPS, through which electronic states near the Fermi level (E(F)) up to similar to 5k(B)T can be observed (k(B) is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near E(F). Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of E(F), can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT. (C) 2010 Elsevier Ltd. All rights reserved.

DOI： 10.1016/j.jpcs.2010.10.052

Spectroscopic evidence of the formation of (V,Ti)O-2 solid solution in VO2 thinner films grown on TiO2(001) substrates 査読

Y. Muraoka, K. Saeki, R. Eguchi, T. Wakita, M. Hirai, T. Yokoya, S. Shin

JOURNAL OF APPLIED PHYSICS 109 ( 4 ) 2011年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER INST PHYSICS

We have prepared VO2 thin films epitaxially grown on TiO2(001) substrates with thickness systematically varied from 2.5 to 13 nm using a pulsed laser deposition method, and studied the transport property and electronic states of the films by means of resistivity and in situ synchrotron photoemission spectroscopy (SRPES). In resistivity measurements, the 13-nm-thick film exhibits a metal-insulator transition at around 290 K on cooling with change of three orders of magnitudes in resistivity. As the film thickness decreases, the metal-insulator transition broadens and the transition temperature increases. Below 4 nm, the films do not show the transition and become insulators. In situ SRPES measurements of near the Fermi level valence band find that the electronic state of the 2.5-nm-thick film is different than that of the temperature-induced insulator phase of VO2 itself although these two states are insulating. Ti 2p core-level photoemission measurements reveal that Ti ions exist near the interface between the films and TiO2 substrates, with a chemical state similar to that in (V,Ti)O-2 solid solution. These results indicate that insulating (V,Ti)O-2 solid solution is formed in the thinner films. We propose a simple growth model of a VO2 thin film on a TiO2(001) substrate. Near the interface, insulating (V,Ti) O-2 solid solution is formed due to the diffusion of Ti ions from the TiO2 substrate into the VO2 film. The concentration of Ti in (V,Ti) O-2 is relatively high near the interface and decreases toward the surface of the film. Beyond a certain film thickness (about 7 nm in the case of the present 13-nm-thick film), the VO2 thin film without any Ti ions starts to grow. Our work suggests that developing a technique for preparing the sharp interface between the VO2 thin films and TiO2 substrates is a key issue to study the physical property of an ultrathin film of "pure" VO2, especially to examine the presence of the novel electronic state called a semi-Dirac point phase predicted by calculations. (c) 2011 American Institute of Physics. [doi:10.1063/1.3549835]

DOI： 10.1063/1.3549835

Multiple phosphorus chemical sites in heavily phosphorus-doped diamond 査読

Hiroyuki Okazaki, Rikiya Yoshida, Takayuki Muro, Tetsuya Nakamura, Takanori Wakita, Yuji Muraoka, Masaaki Hirai, Hiromitsu Kato, Satoshi Yamasaki, Yoshihiko Takano, Satoshi Ishii, Tamio Oguchi, Takayoshi Yokoya

APPLIED PHYSICS LETTERS 98 ( 8 ) 2011年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER INST PHYSICS

We have performed high-resolution core level photoemission spectroscopy on a heavily phosphorus (P)-doped diamond film in order to elucidate the chemical sites of doped-phosphorus atoms in diamond. P 2p core level study shows two bulk components, providing spectroscopic evidence for multiple chemical sites of doped-phosphorus atoms. This indicates that only a part of doped-phosphorus atoms contribute to the formation of carriers. From a comparison with band calculations, possible origins for the chemical sites are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3554699]

DOI： 10.1063/1.3554699

Electronic structure of U(Ru1-xRhx)(2)Si-2 studied by laser angle-resolved photoemission spectroscopy 査読

R. Yoshida, Y. Nakamura, M. Fukui, Y. Haga, E. Yamamoto, Y. Onuki, M. Okawa, S. Shin, M. Hirai, Y. Muraoka, T. Yokoya

INTERNATIONAL CONFERENCE ON STRONGLY CORRELATED ELECTRON SYSTEMS (SCES 2010) 273 2011年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：IOP PUBLISHING LTD

We have studied electronic structures of U(Ru1-xRhx)(2)Si-2 employing ultrahigh-resolution laser angle-resolved photoemission spectroscopy to understand the effect of Rh substitution. A hole-like dispersive feature, which presumably has Rh d-band character, was observed in U(Ru1-xRhx)(2)Si-2 for both x = 0 and x = 0.03. However, although a heavy quasiparticle band appears in the hidden-order state of URu2Si2 (x = 0), it was not observed for x = 0.03 over the temperature range studied. In addition, it was found that energy-distribution curves at the Fermi vector of the hole-like band for x = 0.03 behave similarly to the Fermi-Dirac function. We also present the mapping of Fermi surfaces formed by the hole-like band, which stay nearly unaffected by Rh substitution.

DOI： 10.1088/1742-6596/273/1/012021

Synthesis and physical properties of the hollandite-type titanium oxide KxTi8O16 査読

Yuji Muraoka, Kengo Noami, Takanori Wakita, Masaaki Hirai, Takayoshi Yokoya, Yukako Kayo, Takayuki Muro, Yusuke Tamenori

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 8 ( 2 ) 2011年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：WILEY-V C H VERLAG GMBH

Polycrystalline sample of hollandite-type titanium oxide KxTi8O16 has been prepared and studied by magnetization and X-ray photoelectron spectroscopy (XPS). Room temperature ferromagnetic behaviour is observed in the magnetic hysteresis measurements. XPS measurements of the Ti 2p(3/2) core-level finds that the titanium ions take a mixed valence of Ti4+ and Ti3+. In addition, the valence band spectrum reveals that the 3d electrons tend to localize on Ti3+ ions in the hollandite-type TiO2 lattice. Also, analysis of the valence band spectrum shows that the prepared sample is a wide-gap oxide with a band gap of 3.6 eV. These results indicate that the present hollandite-type KxTi8O16 sample can be classified as a TiO2-based wide-gap semiconductor with Curie temperature above room temperature. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

DOI： 10.1002/pssc.201000383

Photoemission study of Ca-intercalated graphite superconductor CaC6 査読

Hiroyuki Okazaki, Rikiya Yoshida, Keisuke Iwai, Kengo Noami, Takayuki Muro, Tetsuya Nakamura, Takanori Wakita, Yuji Muraoka, Masaaki Hirai, Fumiaki Tomioka, Yoshihiko Takano, Asami Takenaka, Masahiro Toyoda, Tamio Oguch, Takayoshi Yokoya

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 470 S637 - S638 2010年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE BV

In this work, we have performed resonant photoemission studies of Ca-intercalated graphite superconductor CaC6. Using photon energy of the Ca 2p-3d threshold, the photoemission intensity of the peak at Fermi energy (E-F) is resonantly enhanced. This result provides spectroscopic evidence for the existence of Ca 3d states at E-F, and strongly supports that Ca 3d state plays a crucial role for the superconductivity of this material with relatively high T-c. (C) 2009 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.physc.2009.10.039

Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence 査読

Takanori Wakita, Hiroyuki Okazaki, Yoshihiko Takano, Masaaki Hirai, Yuji Muraoka, Takayoshi Yokoya

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 470 S641 - S643 2010年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE BV

The boron concentration dependence of the Si electronic structure of Si(1 00)2 x 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition. (C) 2009 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.physc.2009.11.028

Analysis on photoemission spectrum of superconducting FeSe 査読

Rikiya Yoshida, Takanori Wakita, Hiroyuki Okazaki, Yoshikazu Mizuguchi, Shunsuke Tsuda, Yoshihiko Takano, Hiroyuki Takeya, Kazuto Hirata, Yukako Kato, Takayuki Muro, Mario Okawa, Kyoko Ishizaka, Shik Shin, Hisatomo Harima, Masaaki Hirai, Yuji Muraoka, Takayoshi Yokoya

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS 470 S389 - S390 2010年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE BV

In this paper, we present the result of soft X-ray photoemission spectroscopy and its comparison with the density functional calculation. Although local density approximation seems to be a good starting point for describing the electronic structure of FeSe, the simulated spectrum poorly reproduced the structure around E-B = 2 eV. This result suggests the necessity of theoretical treatment beyond local density approximation. (C) 2009 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.physc.2009.11.172

Electronic Structure of the Novel Filled Skutterudite PrPt4Ge12 Superconductor 査読

Yoshiaki Nakamura, Hiroyuki Okazaki, Rikiya Yoshida, Takanori Wakita, Masaaki Hirai, Yuji Muraka, Hiroyuki Takeya, Kazuto Hirata, Hiroshi Kumigashira, Masaharu Oshima, Takayoshi Yokoya

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 79 ( 12 ) 2010年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：PHYSICAL SOC JAPAN

We have performed soft x-ray photoemission spectroscopy (SXPES) and resonant photoemission spectroscopy (RPES) of the filled skutterudite superconductor PrPt4Ge12 in order to study the electronic structure of valence band and the character of Pr 4f. SXPES of PrPt4Ge12 measured with 1200 eV photon energy, where spectral contribution of Pr 4f is negligible, was found nearly identical with that of LaPt4Ge12, indicating similarity of Pt-Ge derived electronic states of the two compounds. Good correspondence with band calculations allows us to ascribe the dominant Ge 4p character of the density of states at the Fermi level (E-F). Pr 3d -> 4f RPES shows that, although Pr 4f electrons in PrPt4Ge12 are not as strongly hybridized with conduction electrons near E-F as in PrFe4P12, there are finite Pr 4f contribution to the states near E-F in PrPt4Ge12. These PES results give the information of fundamental electronic structure for understanding the physical properties of the novel filled skutterudite superconductor PrPt4Ge12

DOI： 10.1143/JPSJ.79.124701

Signature of hidden order and evidence for periodicity modification in URu2Si2 査読

Rikiya Yoshida, Yoshiaki Nakamura, Masaki Fukui, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Onuki, Mario Okawa, Shik Shin, Masaaki Hirai, Yuji Muraoka, Takayoshi Yokoya

PHYSICAL REVIEW B 82 ( 20 ) 2010年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER PHYSICAL SOC

The detail of electronic structures near the Fermi level in URu2Si2 has been investigated employing state-of-art laser angle-resolved photoemission spectroscopy. The observation of a narrow dispersive band near the Fermi level in the ordered state as well as its absence in a Rh-substituted sample strongly suggest that the emergence of the narrow band is a clear signature of the hidden-order transition. The temperature dependence of the narrow band, which appears at the onset of the hidden-order transition, invokes the occurrence of periodicity modification in the ordered state, which is shown for the first time by any spectroscopic probe. We compare our data to other previous studies and discuss possible implications.

DOI： 10.1103/PhysRevB.82.205108

Electronic structure of pristine and K-doped solid picene: Nonrigid band change and its implication for electron-intramolecular-vibration interaction 査読

H. Okazaki, T. Wakita, T. Muro, Y. Kaji, X. Lee, H. Mitamura, N. Kawasaki, Y. Kubozono, Y. Yamanari, T. Kambe, T. Kato, M. Hirai, Y. Muraoka, T. Yokoya

PHYSICAL REVIEW B 82 ( 19 ) 2010年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AMER PHYSICAL SOC

We use photoemission spectroscopy to study electronic structures of pristine and K-doped solid picene. The valence band spectrum of pristine picene consists of three main features with no state at the Fermi level (E(F)) while that of K-doped picene has three structures similar to those of pristine picene with new states near E(F), consistent with the semiconductor-metal transition. The K-induced change cannot be explained with a simple rigid-band model of pristine picene but can be interpreted by molecular-orbital calculations considering electron-intramolecular-vibration interaction. Excellent agreement of the K-doped spectrum with the calculations points to importance of electron-intramolecular-vibration interaction in K-doped picene.

DOI： 10.1103/PhysRevB.82.195114

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