Updated on 2022/01/14

写真a

 
EGUCHI Ritsuko
 
Organization
Research Institute for Interdisciplinary Science Lecturer
Position
Lecturer
External link

Degree

  • 博士(工学) ( 東京大学 )

Research Areas

  • Natural Science / Magnetism, superconductivity and strongly correlated systems

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

Education

  • 東京大学大学院   工学系研究科   物理工学専攻 博士課程

    2001.4 - 2004.3

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    Country: Japan

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  • 東京大学大学院   工学系研究科   物理工学専攻 修士課程

    1999.4 - 2001.3

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Research History

  • 岡山大学 異分野基礎科学研究所   講師

    2022.1

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  • Okayama University   The Research Institute for Interdisciplinary Science   Assistant Professor

    2016.4 - 2021.12

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  • Okayama University   The Graduate School of Natural Science and Technology   Assistant Professor

    2013.4 - 2016.3

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  • Okayama University   The Graduate School of Natural Science and Technology

    2010.4 - 2013.3

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  • The University of Tokyo   The Institute for Solid State Physics

    2007.4 - 2010.3

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Professional Memberships

 

Papers

  • Superconductivity of topological insulator Sb2Te3− y Se y under pressure Reviewed International coauthorship International journal

    Tomoya Taguchi, Mitsuki Ikeda, Huan Li, Ai Suzuki, Xiaofan Yang, Hirofumi Ishii, Yen-Fa Liao, Hiromi Ota, Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    Journal of Physics: Condensed Matter   33 ( 48 )   485704 - 485704   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/1361-648x/ac244b

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/ac244b/pdf

  • Superconducting properties of BaBi3 at ambient and high pressures Reviewed International coauthorship International journal

    Yanan Wang, Tomoya Taguchi, Huan Li, Ai Suzuki, Yanting Zhang, Akari Miura, Mitsuki Ikeda, Hidenori Goto, Ritsuko Eguchi, Takafumi Miyazaki, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   23 ( 40 )   23014 - 23023   2021.10

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ROYAL SOC CHEMISTRY  

    Herein, we report the preparation and characterization of BaBi3 clarified by DC magnetic susceptibility, powder X-ray diffraction (XRD), and electrical transport. The superconducting properties of BaBi3 were elucidated through the magnetic and electrical transport properties in a wide pressure range. The superconducting transition temperature, T-c, showed a slight decrease (or almost constant T-c) against pressure up to 17.2 GPa. The values of the upper critical field, H-c2, at 0 K, were determined to be 1.27 T at 0 GPa and 3.11 T at 2.30 GPa, using the formula, H-c2(0) = -0.80T(c)[dH(c2)(T)/dT](T=Tc) or H-c2(0) = -0.85T(c)[dH(c2)(T)/dT](T=Tc) because p-wave pairing appeared to occur for this material at both pressures, indicating the unconventionality of superconductivity. This result appears to be consistent with the topological non-trivial nature of superconductivity predicted theoretically. The pressure-dependent XRD patterns measured at 0-20.1 GPa indicated no structural phase transitions up to 20.1 GPa, i.e., the structural phase transitions from the alpha phase to the beta or gamma phase which are induced by an application of pressure were not observed, contrary to the previous report, demonstrating that the alpha phase is maintained over the entire pressure range. Admittedly, the lattice constants and the volume of the unit cell, V, steadily decrease with increasing pressure up to 20.1 GPa. In this study, the plots of T(c)versus p and V versus p of BaBi3 are depicted over a wide pressure range for the first time.

    DOI: 10.1039/d1cp00042j

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  • Pressure Dependence of Superconducting Behavior of 4d and 5d Transition Metal Compounds CaRh2 and CaIr2 Reviewed International coauthorship International journal

    Huan Li, Tomoya Taguchi, Yanan Wang, Hidenori Goto, Ritsuko Eguchi, Hirofumi Ishii, Yen-Fa Liao, Yoshihiro Kubozono

    The Journal of Physical Chemistry C   125 ( 37 )   20617 - 20625   2021.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acs.jpcc.1c06207

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  • Superconductivity in topological insulator β-PdBi2 under pressure Reviewed International coauthorship International journal

    Ai Suzuki, Tomoya Taguchi, Huan Li, Yanan Wang, Hirofumi Ishii, Yen-Fa Liao, Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    Journal of Physics: Condensed Matter   33 ( 13 )   135702 - 135702   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/1361-648x/abd99c

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/abd99c/pdf

  • Emergence of a Pressure-Driven Superconducting Phase in Ba-0.Na-77(0).23Ti2Sb2O Reviewed International coauthorship International journal

    Tomoya Taguchi, Yanan Wang, Xiaofan Yang, Huan Li, Yasuhiro Takabayashi, Kouichi Hayashi, Takafumi Miyazaki, Yen-Fa Liao, Hirofumi Ishii, Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    INORGANIC CHEMISTRY   60 ( 6 )   3585 - 3592   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER CHEMICAL SOC  

    We investigated the pressure dependence of electric transport in a superconducting sample, Ba0.77Na0.23Ti2Sb2O, to complete the phase diagram of superconducting transition temperature (T-c) against pressure (p). This superconducting sample exhibits a T-c value of 5.8 K at ambient pressure. Here, the superconductivity of the recently reported sample was investigated over a wide pressure range. The T-c value monotonously decreased with pressure below 8 GPa. Interestingly, the T-c value rapidly increased above 8 GPa and slowly declined with pressure above 11 GPa. Thus, a new superconducting phase was discovered above similar to 9 GPa. The crystal structure of Ba0.77Na0.23Ti2Sb2O was also elucidated at 0-22.0 GPa with synchrotron X-ray powder diffraction. Consequently, an evident relation between the crystal structure and the superconductivity was revealed, namely, a clear structural phase transition was observed at 8-11 GPa, where the T-c value rapidly increased against pressure. This study provides detailed information on the superconductivity of Ba0.77Na0.23Ti2Sb2O under pressure, which will lead to a comprehensive understanding of pressure-driven superconductivity.

    DOI: 10.1021/acs.inorgchem.0c02836

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  • Photochemical synthesis and device application of acene–phenacene hybrid molecules, dibenzo[n]phenacenes (n = 5–7) Reviewed International journal

    Yanting Zhang, Ritsuko Eguchi, Shino Hamao, Kenta Goto, Fumito Tani, Minoru Yamaji, Yoshihiro Kubozono, Hideki Okamoto

    Chemical Communications   57 ( 39 )   4768 - 4771   2021

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    <p>Dibenzo[<italic>n</italic>]phenacenes (<bold>DBnP</bold>, <italic>n</italic> = 5–7) were applied to the active layers of p-channel FETs and their effective mobilities were evaluated to demonstrate that <italic>C</italic>2h-symmetrical <bold>DB6P</bold> showed superior performance to the <italic>C</italic>2v-symmetrical homologues.</p>

    DOI: 10.1039/d1cc01294k

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  • Fabrication of ring oscillators using organic molecules of phenacene and perylenedicarboximide Reviewed International coauthorship International journal

    Niko Fioravanti, Luca Pierantoni, Davide Mencarelli, Claudio Turchetti, Shino Hamao, Hideki Okamoto, Hidenori Goto, Ritsuko Eguchi, Akihiko Fujiwara, Yoshihiro Kubozono

    RSC Advances   11 ( 13 )   7538 - 7551   2021

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    <p>A ring oscillator consisting of p-channel and n-channel organic FETs.</p>

    DOI: 10.1039/D1RA00511A

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  • Superconductivity in Bi2−x Sb x Te3−y Se y (x = 1.0 and y = 2.0) under pressure Reviewed International coauthorship International journal

    Tong He, Xiaofan Yang, Tomoya Taguchi, Lei Zhi, Takafumi Miyazaki, Kaya Kobayashi, Jun Akimitsu, Hirofumi Ishii, Yen-Fa Liao, Hidenori Goto, Ritsuko Eguchi, Yoshihiro Kubozono

    Journal of Physics: Condensed Matter   32 ( 46 )   465702 - 465702   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/1361-648x/abaad2

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/abaad2/pdf

  • Band Engineering of Bilayer Graphene through Combination of Direct Electron Transfer and Electrostatic Gating Reviewed International journal

    Lei Zhi, Hidenori Goto, Akihisa Takai, Akari Miura, Shino Hamao, Ritsuko Eguchi, Takao Nishikawa, Shizuo Tokito, Yoshihiro Kubozono

    JOURNAL OF PHYSICAL CHEMISTRY C   124 ( 43 )   24001 - 24008   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER CHEMICAL SOC  

    The application of an electric field can be a new technique to control the electronic properties of two-dimensional materials. In a conventional double-gate structure, an ionic liquid is used in the top gate to produce a large electric field successfully. However, the material in the bottom gate has been restricted to solid dielectrics, which limits the applicable electric field. In this study, we combine the direct electron transfer and electrostatic gating to produce a large electric field. Bilayer graphene (BLG), which exhibits a band gap under a perpendicular electric field, was placed on electron-donating self-assembled monolayers with an amino end group (NH2-SAMs). As the NH2-SAMs were prepared on SiO2/Si substrates, the electron density of the BLG was increased further by applying a positive bottom gate voltage through the SiO2 dielectric. Additionally, a negative top gate voltage was applied with an ionic gel to produce an upward electric field. The transport gap in the BLG was evaluated based on the temperature dependence of the minimum conductivity at the charge neutrality point of the BLG. Comparing the results obtained from the BLG without the NH2-SAMs, we found that the NH2-SAMs donated electrons whose sheet density was 3.9 x 10(12)/cm(2), or in other words, they produced an additional electric displacement field of 0.72 V/nm without a significant reduction of the mobility. Furthermore, we successfully evaluated the actual carrier density controlled by the top gate voltage based on a simple capacitor model. The combination of the two methods to accumulate carriers offers a unique opportunity to explore a novel electronic property by enhancing the controllability of the electric field and the carrier density.

    DOI: 10.1021/acs.jpcc.0c07537

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  • Superconducting behavior of BaTi2Bi2O and its pressure dependence Reviewed International coauthorship International journal

    Yanan Wang, Huan Li, Tomoya Taguchi, Ai Suzuki, Akari Miura, Hidenori Goto, Ritsuko Eguchi, Takafumi Miyazaki, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   22 ( 40 )   23315 - 23322   2020.10

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    A new superconducting sample, BaTi2Bi2O, was synthesized and characterized over a wide pressure range. The superconducting transition temperature, T-c, of BaTi2Bi2O was 4.33 K at ambient pressure. The crystal structure was tetragonal (space group of P4/mmm (No. 123)), according to the X-ray diffraction (XRD) pattern at ambient pressure. The XRD pattern was analyzed using the Le Bail method. The magnetic-field dependence of the magnetization at different temperatures was precisely investigated to elucidate the characteristics of the superconductivity. The pressure-dependent XRD patterns showed absence of structural phase transitions up to 19.8 GPa. The superconducting properties of BaTi2Bi2O were investigated under pressure. T-c monotonously increased with the pressure (p) up to 4.0 GPa and saturated above 4.0 GPa. The variations in the T-c-p plot were thoroughly analyzed. The Cooper pair symmetry (or superconducting pairing mechanism) was analyzed based on the magnetic field dependence of the superconductivity at ambient and high pressures, which indicated a sign of p-wave pairing for the superconductivity of BaTi2Bi2O, i.e., topologically nontrivial sign was suggested for BaTi2Bi2O.

    DOI: 10.1039/d0cp04771f

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  • Structure and superconducting properties of multiple phases of (NH3) y AE x FeSe (AE: Ca, Sr and Ba) Reviewed International coauthorship International journal

    Huan Li, Yanan Wang, Xiaofan Yang, Tomoya Taguchi, Lei Zhi, Hidenori Goto, Ritsuko Eguchi, Hirofumi Ishii, Yen-Fa Liao, Yoshihiro Kubozono

    Journal of Physics: Condensed Matter   32 ( 39 )   395704 - 395704   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/1361-648x/ab9911

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/ab9911/pdf

  • A new protocol for the preparation of superconducting KBi2 Reviewed International coauthorship International journal

    Huan Li, Yanan Wang, Yutaro Aoki, Saki Nishiyama, Xiaofan Yang, Tomoya Taguchi, Akari Miura, Ai Suzuki, Lei Zhi, Hidenori Goto, Ritsuko Eguchi, Takashi Kambe, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    RSC Advances   10 ( 45 )   26686 - 26692   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    <p>A superconducting KBi2 sample was successfully prepared using a liquid ammonia (NH3) technique.</p>

    DOI: 10.1039/d0ra04541a

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  • Inhomogeneous superconductivity in thin crystals of FeSe1−xTex (x=1.0, 0.95, and 0.9) Reviewed International journal

    Ritsuko Eguchi, Megumi Senda, Eri Uesugi, Hidenori Goto, Akihiko Fujiwara, Yasuhiko Imai, Shigeru Kimura, Takashi Noji, Yoji Koike, Yoshihiro Kubozono

    Materials Research Express   7 ( 3 )   036001   2020.3

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

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  • Superconducting behavior of a new metal iridate compound, SrIr2, under pressure Reviewed International coauthorship International journal

    Xiaofan Yang, Huan Li, Tong He, Tomoya Taguchi, Yanan Wang, Hidenori Goto, Ritsuko Eguchi, Rie Horie, Kazumasa Horigane, Kaya Kobayashi, Jun Akimitsu, Hirofumi Ishii, Yen-Fa Liao, Hitoshi Yamaoka, Yoshihiro Kubozono

    Journal of Physics: Condensed Matter   32 ( 2 )   025704 - 025704   2020.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.1088/1361-648x/ab4605

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    Other Link: http://iopscience.iop.org/article/10.1088/1361-648X/ab4605/pdf

  • Synthesis of the extended phenacene molecules, [10]phenacene and [11]phenacene, and their performance in a field-effect transistor Reviewed International coauthorship International journal

    Hideki Okamoto, Shino Hamao, Ritsuko Eguchi, Hidenori Goto, Yasuhiro Takabayashi, Paul Yu-Hsiang Yen, Luo Uei Liang, Chia-Wei Chou, Germar Hoffmann, Shin Gohda, Hisako Sugino, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    Scientific Reports   9 ( 1 )   4009   2019.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    DOI: 10.1038/s41598-019-39899-4

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    Other Link: http://www.nature.com/articles/s41598-019-39899-4

  • Superconducting properties of (NH3)yLixFeSe0.5Te0.5 under pressure Reviewed International coauthorship International journal

    Xiaofan Yang, Tong He, Tomoya Taguchi, Huan Li, Yanan Wang, Hidenori Goto, Ritsuko Eguchi, Takafumi Miyazaki, Hitoshi Yamaoka, Hirofumi Ishii, Yen-Fa Liao, Yoshihiro Kubozono

    New Journal of Physics   21 ( 11 )   113010 - 113010   2019.11

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    <title>Abstract</title>
    We prepared two superconducting phases of (NH3)<italic>
    y
    </italic>Li<italic>
    x
    </italic>FeSe0.5Te0.5, which show superconducting transition temperatures (<italic>T</italic>
    c’s) as high as 20.2 and 29.5 K at ambient pressure, here called the ‘low-<italic>T</italic>
    c phase’ and ‘high-<italic>T</italic>
    c phase’. The temperature dependence of electrical resistance (<italic>R</italic>) was measured for the low-<italic>T</italic>
    c phase of (NH3)<italic>
    y
    </italic>Li<italic>
    x
    </italic>FeSe0.5Te0.5 over a pressure (<italic>p</italic>) range of 0–14 GPa, and for the high-<italic>T</italic>
    c phase of (NH3)<italic>
    y
    </italic>Li<italic>
    x
    </italic>FeSe0.5Te0.5 over 0–19 GPa, yielding double-dome superconducting <italic>T</italic>
    c–<italic>p</italic> phase diagrams, i.e. two superconducting phases (SC-I and SC-II) were found for both the low-<italic>T</italic>
    c and high-<italic>T</italic>
    c phases under pressure. For the low-<italic>T</italic>
    c phase, the maximum <italic>T</italic>
    c was 20.2 K at 0 GPa for SC-I, and 19.9 K at 8.98 GPa for SC-II. For the high-<italic>T</italic>
    c phase, the maximum <italic>T</italic>
    c was 33.0 K at 1.00 GPa for SC-I, and 24.0 K at 11.5–13.2 GPa for SC-II. These results imply that the maximum <italic>T</italic>
    c value of the high pressure phase (SC-II) does not exceed the maximum value of the SC-I, unlike what was shown in the <italic>T</italic>
    c–<italic>p</italic> phase diagrams of (NH3)<italic>
    y
    </italic>Li<italic>
    x
    </italic>FeSe and (NH3)<italic>
    y
    </italic>Cs<italic>
    x
    </italic>FeSe investigated previously. Nevertheless, the double-dome <italic>T</italic>
    c–<italic>p</italic> phase diagram was found in metal-doped FeSe0.5Te0.5, indicating that this feature is universal in metal-doped FeSe<sub>1−<italic>z</italic>
    </sub>Te<italic>
    z
    </italic>. Moreover, no structural phase transitions were observed for either the low-<italic>T</italic>
    c or high-<italic>T</italic>
    c phases of (NH3)<italic>
    y
    </italic>Li<italic>
    x
    </italic>FeSe0.5Te0.5 over the wide pressure range of 0–15.3 GPa, and the <italic>T</italic>
    c-lattice constant (<italic>c</italic>) plots for both phases were recorded to determine the critical point separating SC-I and SC-II.

    DOI: 10.1088/1367-2630/ab5034

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    Other Link: http://iopscience.iop.org/article/10.1088/1367-2630/ab5034/pdf

  • Preparation and characterization of superconducting Ba1−x Cs x Ti2Sb2O, and its pressure dependence of superconductivity Reviewed International coauthorship International journal

    Yanan Wang, Xiaofan Yang, Tomoya Taguchi, Huan Li, Tong He, Hidenori Goto, Ritsuko Eguchi, Takafumi Miyazaki, Yen-Fa Liao, Hirofumi Ishii, Yoshihiro Kubozono

    Japanese Journal of Applied Physics   58 ( 11 )   110603 - 110603   2019.11

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    DOI: 10.7567/1347-4065/ab4ef5

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    Other Link: http://iopscience.iop.org/article/10.7567/1347-4065/ab4ef5/pdf

  • Pressure-induced superconductivity in Bi2−xSbxTe3−ySey Reviewed International coauthorship International journal

    Tong He, Xiaofan Yang, Tomoya Taguchi, Teppei Ueno, Kaya Kobayashi, Jun Akimitsu, Hitoshi Yamaoka, Hirofumi Ishii, Yen-Fa Liao, Hiromi Ota, Hidenori Goto, Ritsuko Eguchi, Kensei Terashima, Takayoshi Yokoya, Harald O. Jeschke, Xianxin Wu, Yoshihiro Kubozono

    Physical Review B   100 ( 9 )   094525   2019.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Physical Society (APS)  

    DOI: 10.1103/physrevb.100.094525

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.094525/fulltext

  • Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters Reviewed International coauthorship International journal

    Pompei Emanuela, Turchetti Claudio, Hamao Shino, Miura Akari, Goto Hidenori, Okamoto Hideki, Fujiwara Akihiko, Eguchi Ritsuko, Kubozono Yoshihiro

    JOURNAL OF MATERIALS CHEMISTRY C   7 ( 20 )   6022 - 6033   2019.5

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    DOI: 10.1039/c8tc05824e

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  • Preparation and characterization of a new metal-intercalated graphite superconductor Reviewed

    Yang Xiaofan, Taguchi Tomoya, Wang Yanan, He Tong, Uchiyama Takaki, Takai Akihisa, Zhi Lei, Miyazaki Takafumi, Goto Hidenori, Eguchi Ritsuko, Ishii Hirofumi, Liao Yen-Fa, Yamaoka Hitoshi, Kubozono Yoshihiro

    MATERIALS RESEARCH EXPRESS   6 ( 1 )   016003   2019.1

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    DOI: 10.1088/2053-1591/aae9d2

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  • Quantum valence criticality in a correlated metal Reviewed

    Kentaro Kuga, Yosuke Matsumoto, Mario Okawa, Shintaro Suzuki, Takahiro Tomita, Keita Sone, Yasuyuki Shimura, Toshiro Sakakibara, Daisuke Nishio-Hamane, Yoshitomo Karaki, Yasutaka Takata, Masaharu Matsunami, Ritsuko Eguchi, Munetaka Taguchi, Ashish Chainani, Shik Shin, Kenji Tamasaku, Yoshinori Nishino, Makina Yabashi, Tetsuya Ishikawa, Satoru Nakatsuji

    Science Advances   4 ( 2 )   2018.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Association for the Advancement of Science  

    A valence critical end point existing near the absolute zero provides a unique case for the study of a quantum version of the strong density fluctuation at the Widom line in the supercritical fluids. Although singular charge and orbital dynamics are suggested theoretically to alter the electronic structure significantly, breaking down the standard quasi-particle picture, this has never been confirmed experimentally to date. We provide the first empirical evidence that the proximity to quantum valence criticality leads to a clear breakdown of Fermi liquid behavior. Our detailed study of the mixed valence compound a-YbAlB4 reveals that a small chemical substitution induces a sharp valence crossover, accompanied by a pronounced non-Fermi liquid behavior characterized by a divergent effective mass and unusual T/B scaling in the magnetization.

    DOI: 10.1126/sciadv.aao3547

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  • Difference in gating and doping effects on the band gap in bilayer graphene Reviewed

    Takaki Uchiyama, Hidenori Goto, Hidehiko Akiyoshi, Ritsuko Eguchi, Takao Nishikawa, Hiroshi Osada, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   7   2017.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:NATURE PUBLISHING GROUP  

    A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics. The presence of the band gap has been confirmed using double-gated BLG devices in which positive and negative gate voltages are applied to each side of BLG. An alternative method to induce the electric field is electron and hole doping of each side of BLG using electron-transfer adsorbates. However, the generation of the band gap by carrier doping is still under investigation. Here, we determined whether the electron/hole doping can produce the electric field required to open the band gap by measuring the temperature dependence of conductivity for BLG placed between electron-donor self-assembled monolayers (SAMs) and electron-acceptor molecules. We found that some devices exhibited a band gap and others did not. The potentially irregular and variable structure of SAMs may affect the configuration of the electric field, yielding variable electronic properties. This study demonstrates the essential differences between gating and doping.

    DOI: 10.1038/s41598-017-11822-9

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  • Synthesis and characterization of carbazolo[2,1-a]carbazole in thin film and single crystal field-effect transistors Reviewed

    Miriam Mas-Montoya, Jose Pedro Ceron-Carrasco, Shino Hamao, Ritsuko Eguchi, Yoshihiro Kubozono, Alberto Tarraga, David Curiel

    JOURNAL OF MATERIALS CHEMISTRY C   5 ( 28 )   7020 - 7027   2017.7

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    The synthesis of a hexacyclic fused polyheteroaromatic system, namely carbazolo[2,1-a] carbazole, via a simple two-step route is reported. Additionally, the characterization of its electronic structure is described, corresponding to a very stable molecule that is also transparent to visible light. Solid state packing is determined by X-ray diffraction analysis which, in combination with the computational calculation of the charge transfer parameters, reveals an adequate molecular arrangement to achieve a low anisotropic environment for charge transport. This p-conjugated system is used as an organic semiconductor for the fabrication of thin film and single crystal organic field-effect transistors (OFETs). Furthermore, the evaluation of different gate dielectrics results in transistors with very good hole mobilities and low operating voltages. In agreement with these results, carbazolo[2,1-a] carbazole becomes one of the best organic semiconductors belonging to the family of carbazole-based azaphenacenes.

    DOI: 10.1039/c7tc02139a

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  • Photoelectron Holographic Atomic Arrangement Imaging of Cleaved Bimetal-intercalated Graphite Superconductor Surface Reviewed

    Fumihiko Matsui, Ritsuko Eguchi, Saki Nishiyama, Masanari Izumi, Eri Uesugi, Hidenori Goto, Tomohiro Matsushita, Kenji Sugita, Hiroshi Daimon, Yuji Hamamoto, Ikutaro Hamada, Yoshitada Morikawa, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   6   2016.11

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    From the C 1s and K 2p photoelectron holograms, we directly reconstructed atomic images of the cleaved surface of a bimetal-intercalated graphite superconductor, (Ca, K) C-8, which differed substantially from the expected bulk crystal structure based on x-ray diffraction (XRD) measurements. Graphene atomic images were collected in the in-plane cross sections of the layers 3.3 angstrom and 5.7 angstrom above the photoelectron emitter C atom and the stacking structures were determined as AB-and AA-type, respectively. The intercalant metal atom layer was found between two AA-stacked graphenes. The K atomic image revealing 2 x 2 periodicity, occupying every second centre site of C hexagonal columns, was reconstructed, and the Ca 2p peak intensity in the photoelectron spectra of (Ca, K) C-8 from the cleaved surface was less than a few hundredths of the K 2p peak intensity. These observations indicated that cleavage preferentially occurs at the KC8 layers containing no Ca atoms.

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  • Superconductivity in (NH3)(y)NaxFeSe0.5Te0.5 Reviewed

    Lu Zheng, Yusuke Sakai, Xiao Miao, Saki Nishiyama, Takahiro Terao, Ritsuko Eguchi, Hidenori Goto, Yoshihiro Kubozono

    PHYSICAL REVIEW B   94 ( 17 )   2016.11

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    Na-intercalated FeSe0.5Te0.5 was prepared using the liquid NH3 technique, and a superconducting phase exhibiting a superconducting transition temperature (T-c) as high as 27 K was discovered. This can be called the high-T-c phase since a 21 K superconducting phase was previously obtained in (NH3)(y)NaxFeSe0.5Te0.5. The chemical composition of the high-T-c phase was determined to be (NH3)(0.61(4))Na-0.63(5) Fe0.85Se0.55(3) Te-0.44(2). The x-ray diffraction patterns of both phases show that a larger lattice constant c (i.e., FeSe0.5Te0.5 plane spacing) produces a higher T-c. This behavior is the same as that of metal-doped FeSe, suggesting that improved Fermi-surface nesting produces the higher T-c. The high-T-c phase converted to the low-T-c phase within several days, indicating that it is a metastable phase. The temperature dependence of resistance for both phases was recorded at different magnetic fields, and the critical fields were determined for both phases. Finally, the T-c versus c phase diagram was prepared for the metal-doped FeSe0.5Te0.5, which is similar to that of metal-doped FeSe, although the T-c is lower.

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  • Recent progress on carbon-based superconductors Reviewed

    Yoshihiro Kubozono, Ritsuko Eguchi, Hidenori Goto, Shino Hamao, Takashi Kambe, Takahiro Terao, Saki Nishiyama, Lu Zheng, Xiao Miao, Hideki Okamoto

    JOURNAL OF PHYSICS-CONDENSED MATTER   28 ( 33 )   2016.8

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    This article reviews new superconducting phases of carbon-based materials. During the past decade, new carbon-based superconductors have been extensively developed through the use of intercalation chemistry, electrostatic carrier doping, and surface-proving techniques. The superconducting transition temperature T-c of these materials has been rapidly elevated, and the variety of superconductors has been increased. This review fully introduces graphite, graphene, and hydrocarbon superconductors and future perspectives of high-T-c superconductors based on these materials, including present problems. Carbon-based superconductors show various types of interesting behavior, such as a positive pressure dependence of T-c. At present, experimental information on superconductors is still insufficient, and theoretical treatment is also incomplete. In particular, experimental results are still lacking for graphene and hydrocarbon superconductors. Therefore, it is very important to review experimental results in detail and introduce theoretical approaches, for the sake of advances in condensed matter physics. Furthermore, the recent experimental results on hydrocarbon superconductors obtained by our group are also included in this article. Consequently, this review article may provide a hint to designing new carbon-based superconductors exhibiting higher T-c and interesting physical features.

    DOI: 10.1088/0953-8984/28/33/334001

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  • Emergence of superconductivity in (NH3)(y)MxMoSe2 (M: Li, Na and K) Reviewed

    Xiao Miao, Saki Nishiyama, Lu Zheng, Hidenori Goto, Ritsuko Eguchi, Hiromi Ota, Takashi Kambe, Kensei Terashima, Takayoshi Yokoya, Huyen T. L. Nguyen, Tomoko Kagayama, Naohisa Hirao, Yasuo Ohishi, Hirofumi Ishii, Yen-Fa Liao, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   6   2016.7

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    We report syntheses of new superconducting metal-doped MoSe2 materials (MxMoSe2). The superconducting MxMoSe2 samples were prepared using a liquid NH3 technique, and can be represented as '(NH3)(y)MxMoSe2'. The T(c)s of these materials were approximately 5.0 K, independent of x and the specific metal atom. X-ray diffraction patterns of (NH3)(y)NaxMoSe2 were recorded using polycrystalline powders. An increase in lattice constant c showed that the Na atom was intercalated between MoSe2 layers. The x-independence of c was observed in (NH3)(y)NaxMoSe2, indicating the formation of a stoichiometric compound in the entire x range, which is consistent with the x-independence of T-c. A metallic edge of the Fermi level was observed in the photoemission spectrum at 30 K, demonstrating its metallic character in the normal state. Doping of MoSe2 with Li and K also yielded superconductivity. Thus, MoSe2 is a promising material for designing new superconductors, as are other transition metal dichalcogenides.

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  • Correlation of superconductivity with crystal structure in (NH3)(y)CsxFeSe Reviewed

    Lu Zheng, Xiao Miao, Yusuke Sakai, Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Saki Nishiyama, Kunihisa Sugimoto, Akihiko Fujiwara, Yoshihiro Kubozono

    PHYSICAL REVIEW B   93 ( 10 )   2016.3

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    The superconducting transition temperature T-c of ammoniated metal-doped FeSe (NH3)(y)MxFeSe (M: metal atom) has been scaled with the FeSe plane spacing, and it has been suggested that the FeSe plane spacing depends on the location of metal atoms in (NH3)(y)MxFeSe crystals. Although the crystal structure of (NH3)(y)LixFeSe exhibiting a high T-c (similar to 44 K) was determined from neutron diffraction, the structure of (NH3)(y)MxFeSe exhibiting a low T-c (similar to 32 K) has not been determined thus far. Here, we determined the crystal structure of (NH3)(y)Cs0.4FeSe (T-c = 33 K) through the Rietveld refinement of the x-ray diffraction (XRD) pattern measured with synchrotron radiation at 30 K. The XRD pattern was analyzed based on two different models, on-center and off-center, under a space group of 14/mmm. In the on-center structure, the Cs occupies the 2a site and the N of NH3 may occupy either the 4c or 2b site, or both. In the off-center structure, the Cs may occupy either the 4c or 2b site, or both, while the N occupies the 2a site. Only an on-center structure model in which the Cs occupies the 2a and the N of NH3 occupies the 4c site provided reasonable results in the Rietveld analysis. Consequently, we concluded that (NH3)(y)Cs0.4FeSe can be assigned to the on-center structure, which produces a smaller FeSe plane spacing leading to the lower T-c.

    DOI: 10.1103/PhysRevB.93.104508

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  • Synthesis and transistor application of the extremely extended phenacene molecule, [9] phenacene Reviewed

    Yuma Shimo, Takahiro Mikami, Shino Hamao, Hidenori Goto, Hideki Okamoto, Ritsuko Eguchi, Shin Gohda, Yasuhiko Hayashi, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   6   2016.2

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    the widespread interest in the chemistry, physics and materials science of such molecules and their potential applications. In particular, extended phenacene molecules, consisting of coplanar fused benzene rings in a repeating W-shaped pattern have attracted much attention because field-effect transistors (FETs) using phenacene molecules show promisingly high performance. Until now, the most extended phenacene molecule available for transistors was [8] phenacene, with eight benzene rings, which showed very high FET performance. Here, we report the synthesis of a more extended phenacene molecule, [9] phenacene, with nine benzene rings. Our synthesis produced enough [9] phenacene to allow the characterization of its crystal and electronic structures, as well as the fabrication of FETs using thin-film and single-crystal [9] phenacene. The latter showed a field-effect mobility as high as 18 cm(2) V-1 s(-1), which is the highest mobility realized so far in organic single-crystal FETs.

    DOI: 10.1038/srep21008

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  • Temperature Dependence of Magnetically Active Charge Excitations in Magnetite across the Verwey Transition Reviewed

    M. Taguchi, A. Chainani, S. Ueda, M. Matsunami, Y. Ishida, R. Eguchi, S. Tsuda, Y. Takata, M. Yabashi, K. Tamasaku, Y. Nishino, T. Ishikawa, H. Daimon, S. Todo, H. Tanaka, M. Oura, Y. Senba, H. Ohashi, S. Shin

    PHYSICAL REVIEW LETTERS   115 ( 25 )   2015.12

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    We study the electronic structure of bulk single crystals and epitaxial films of Fe3O4. Fe2p core level spectra show clear differences between hard x-ray (HAX) and soft x-ray photoemission spectroscopy (PES). The bulk-sensitive spectra exhibit temperature (T) dependence across the Verwey transition, which is missing in the surface-sensitive spectra. By using an extended impurity Anderson full-multiplet model-and in contrast to an earlier peak assignment-we show that the two distinct Fe species (A and B site) and the charge modulation at the B site are responsible for the newly found double peaks in the main peak above T-V and its T-dependent evolution. The Fe 2p HAXPES spectra show a clear magnetic circular dichroism (MCD) in the metallic phase of magnetized 100-nm-thick films. The model calculations also reproduce the MCD and identify the contributions from magnetically distinct A and B sites. Valence band HAXPES shows a finite density of states at E-F for the polaronic half metal with a remnant order above TV and a clear gap formation below TV. The results indicate that the Verwey transition is driven by changes in the strongly correlated and magnetically active B-site electronic states, consistent with resistivity and optical spectra.

    DOI: 10.1103/PhysRevLett.115.256405

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  • Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet Reviewed

    P. A. Bhobe, A. Kumar, M. Taguchi, R. Eguchi, M. Matsunami, Y. Takata, A. K. Nandy, P. Mahadevan, D. D. Sarma, A. Neroni, E. Sasioglu, M. Lezaic, M. Oura, Y. Senba, H. Ohashi, K. Ishizaka, M. Okawa, S. Shin, K. Tamasaku, Y. Kohmura, M. Yabashi, T. Ishikawa, K. Hasegawa, M. Isobe, Y. Ueda, A. Chainani

    PHYSICAL REVIEW X   5 ( 4 )   2015.10

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    Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K2Cr8O16, which exhibits a temperature-dependent (T-dependent) paramagnetic-to-ferromagnetic- metal transition at T-C = 180 K and transforms into a ferromagnetic insulator below T-MI = 95 K. We observe clear T-dependent dynamic valence (charge) fluctuations from above T-C to T-MI, which effectively get pinned to an average nominal valence of Cr+3.75 (Cr4+:Cr3+ states in a 3:1 ratio) in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0) similar to 3.5(k(B)T(MI)) similar to 35 meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U similar to 4 eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr) and the half-metallic ferromagnetism in the t(2g) up-spin band favor a low-energy Peierls metal-insulator transition.

    DOI: 10.1103/PhysRevX.5.041004

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  • Carrier Accumulation in Graphene with Electron Donor/Acceptor Molecules Reviewed

    Hidehiko Akiyoshi, Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yukihiro Yoshida, Gunzi Saito, Yoshihiro Kubozono

    ADVANCED ELECTRONIC MATERIALS   1 ( 7 )   2015.7

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    Electron transfer between graphene and an adsorbed molecule is systematically studied using a variety of electron acceptor/donor molecules. Doping efficiency is determined by the difference between the Fermi energy of graphene and the lowest unoccupied molecular orbital or highest unoccupied molecular orbital level of the molecule. The maximum carrier density accumulated by molecular adsorption is limited by the small density of states in graphene.

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  • Time-resolved HAXPES at SACLA: probe and pump pulse-induced space-charge effects Reviewed

    L-P Oloff, M. Oura, K. Rossnagel, A. Chainani, M. Matsunami, R. Eguchi, T. Kiss, Y. Nakatani, T. Yamaguchi, J. Miyawaki, M. Taguchi, K. Yamagami, T. Togashi, T. Katayama, K. Ogawa, M. Yabashi, T. Ishikawa

    NEW JOURNAL OF PHYSICS   16   2014.12

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    Time-resolved hard x-ray photoelectron spectroscopy (trHAXPES) is established using the x-ray free-electron laser SACLA. The technique extends time-resolved photoemission into the hard x-ray regime and, as a core-level spectroscopy, combines element and atomic-site specificity and sensitivity to the chemical environment with femtosecond time resolution and bulk (sub-surface) sensitivity. The viability of trHAXPES using 8 keV x-ray free-electron-laser radiation is demonstrated by a systematic investigation of probe and pump pulse-induced vacuum space-charge effects on the V 1s emission of VO2 and the Ti 1s emission of SrTiO3. The time and excitation energy dependencies of the measured spectral shifts and broadenings are compared to the results of N-body numerical simulations and simple analytic (mean-field) models. Good agreement between the experimental and calculated results is obtained. In particular, the characteristic temporal evolution of the pump pulse-induced spectral shift is shown to provide an effective means to determine the temporal overlap of pump and probe pulses. trHAXPES opens a new avenue in the study of ultrafast atomic-site specific electron and chemical dynamics in materials and at buried interfaces.

    DOI: 10.1088/1367-2630/16/12/123045

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  • Electronic structure of fullerene derivatives in organic photovoltaics Reviewed

    Rie Nakanishi, Ayumi Nogimura, Ritsuko Eguchi, Kaname Kanai

    ORGANIC ELECTRONICS   15 ( 11 )   2912 - 2921   2014.11

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    The electronic structures of the fullerene derivatives [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM), [6,6]-diphenyl C-62 bis (butyric acid methyl ester) (bisPCBM), C-70, [6,6]-phenyl-C-71-butyric acid methyl ester (PC70BM), [6,6]-phenyl-C-61-butyric acid butyl ester (PCBB), [6,6]-phenyl-C-61-butyric acid octyl ester (PCBO), [6,6]-thienyl-C-61-butyric acid methyl ester (TCBM), and indene-C-60 bisadduct (ICBA), which are frequently used as n-type materials in organic photovoltaics, were studied by ultraviolet photoelectron spectroscopy and inverse photoemission spectroscopy. We also performed molecular orbital calculation based on density functional theory to understand the experimental results. The electronic structures near the energy gap of the compounds were found to be governed predominately by the fullerene backbone. The side chains also affected the electronic structures of the compounds. The ionization energy and electron affinity were strongly affected by the number of carbons and functional groups in the side chain. (C) 2014 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.orgel.2014.08.013

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  • Transistor Application of Phenacene Molecules and Their Characteristics Reviewed

    Yoshihiro Kubozono, Xuexia He, Shino Hamao, Kazuya Teranishi, Hidenori Goto, Ritsuko Eguchi, Takashi Kambe, Shin Gohda, Yasushi Nishihara

    EUROPEAN JOURNAL OF INORGANIC CHEMISTRY   ( 24 )   3806 - 3819   2014.8

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    The characteristics of field-effect transistors (FETs) fabricated from thin films and single crystals of phenacene molecules are fully reported in this review together with the electronic and crystal structures of phenacenes. Phenacene molecules possess a low HOMO level and a wide band gap. The highest mobility observed in the phenacene thin-film FETs is 7.4 cm(2)V(-1)s(-1) for [6]phenacene, and in single-crystal FETs the highest value is 6.3 cm(2)V(-1)s(-1) for [7]phenacene. The phenacene thin-film FETs show O-2-sensing properties unlike their single-crystal FETs. The bias-stress effect is fully investigated for phenacene single-crystal FETs. Furthermore, the low-voltage operation of phenacene single-crystal FETs with electric-double-layer (EDL) capacitors is reported. The temperature dependence of phenacene single-crystal FETs is reported to clarify the transport mechanism, which is suggestive of band-like transport.

    DOI: 10.1002/ejic.201402168

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  • Electronic structure of CeCuAs2 Reviewed

    A. Chainani, M. Matsunami, M. Taguchi, R. Eguchi, Y. Takata, M. Oura, S. Shin, K. Sengupta, E. V. Sampathkumaran, Th. Doert, Y. Senba, H. Ohashi, K. Tamasaku, Y. Kohmura, M. Yabashi, T. Ishikawa

    PHYSICAL REVIEW B   89 ( 23 )   2014.6

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    We study the electronic structure of CeCuAs2, which is known to show an anomalous negative temperature coefficient of resistivity below room temperature, while the thermopower shows metallic behavior. We carry out hard x-ray photoemission spectroscopy (PES), x-ray absorption spectroscopy (XAS), and resonant PES across the Ce 3d-4f and Cu 2p-3d thresholds to investigate the role of Kondo screening in CeCuAs2. The Ce 3d core-level PES shows the f(0), f(1), and f(2) features, and the Ce 3d-4f XAS shows corresponding features due to transitions into the f(1) and f(2) states, as in Kondo systems. The spectral feature assignments are confirmed by single-impurity Anderson model calculations and indicate a nearly trivalent-Ce configuration with small but finite mixed valency. The resonant PES valence band spectra across the Ce 3d-4f threshold show an intense Ce 4f(1) resonance just below the Fermi level, while the Ce 4f(0) feature is observed at a binding energy of 2.5 eV. The obtained f partial density of states shows an unusual pseudogaplike dip at the Fermi level in CeCuAs2. The results indicate the importance of Kondo screening and a pseudogap in the f partial density of states for the anomalous transport and magnetic properties of CeCuAs2.

    DOI: 10.1103/PhysRevB.89.235117

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  • An Extended Phenacene-type Molecule, [8] Phenacene: Synthesis and Transistor Application Reviewed

    Hideki Okamoto, Ritsuko Eguchi, Shino Hamao, Hidenori Goto, Kazuma Gotoh, Yusuke Sakai, Masanari Izumi, Yutaka Takaguchi, Shin Gohda, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   4   2014.6

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    A new phenacene-type molecule, [8] phenacene, which is an extended zigzag chain of coplanar fused benzene rings, has been synthesised for use in an organic field-effect transistor (FET). The molecule consists of a phenacene core of eight benzene rings, which has a lengthy pi-conjugated system. The structure was verified by elemental analysis, solid-state NMR, X-ray diffraction (XRD) pattern, absorption spectrum and photoelectron yield spectroscopy (PYS). This type of molecule is quite interesting, not only as pure chemistry but also for its potential electronics applications. Here we report the physical properties of [8] phenacene and its FET application. An [8] phenacene thin-film FET fabricated with an SiO2 gate dielectric showed clear p-channel characteristics. The highest m achieved in an [8] phenacene thin-film FET with an SiO2 gate dielectric is 1.74 cm(2) V-1 s(-1), demonstrating excellent FET characteristics; the average mu was evaluated as 1.2(3) cm(2) V-1 s(-1). The mu value in the [8] phenacene electric-double-layer FET reached 16.4 cm(2) V-1 s(-1), which is the highest reported in EDL FETs based on phenacene-type molecules; the average m was evaluated as 8(5) cm(2) V-1 s(-1). The mu values recorded in this study show that [8] phenacene is a promising molecule for transistor applications.

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  • Ultrafast photoinduced transition of an insulating VO2 thin film into a nonrutile metallic state Reviewed

    Rikiya Yoshida, Takashi Yamamoto, Yukiaki Ishida, Hiroki Nagao, Tsubasa Otsuka, Kuninari Saeki, Yuji Muraoka, Ritsuko Eguchi, Kyoko Ishizaka, Takayuki Kiss, Shuntaro Watanabe, Teruto Kanai, Jiro Itatani, Shik Shin

    PHYSICAL REVIEW B   89 ( 20 )   2014.5

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    Using time-resolved photoemission spectroscopy, we have investigated the nonequilibrium electronic structures of a VO2 thin film upon photoexcitation. We employed the high-harmonic generation method, which was crucial in obtaining the results. Irradiation by a 170-fs optical pulse at a fluence above similar to 6 mJ/cm(2) rapidly converts the insulating VO2 thin film into a metallic state, and we show that the transition is accompanied by a spectral-weight redistribution over a 1-eV scale. This observation provides direct spectroscopic evidence of an ultrafast insulator-to-metal transition. The transient metallic state has a unique spectrum that deviates from the static spectrum of the rutile metal phase. We also observe an anomalous spreading of spectral weight up to similar to 0.4 eV above the Fermi level as soon as the transient metallic state emerges. The temporal evolution of the spectral weight near the Fermi level exhibits an ultrafast increase and a subsequent slower increase over similar to 3 ps. We suggest that a broadening mechanism related to the excitation of phonon modes is responsible for the spreading of the spectral weight and that the slower increase of the spectral weight is associated with the expansion of the metallic region after photoinduced nucleation. In addition, the initial nucleation of the metallic state appears to be spatially inhomogeneous even near the surface. The results of this study highlight the uniqueness of the nonequilibrium metallic state in comparison to the equilibrium rutile metallic state from an electronic-state perspective.

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  • Transistor application of alkyl-substituted picene Reviewed

    Hideki Okamoto, Shino Hamao, Hidenori Goto, Yusuke Sakai, Masanari Izumi, Shin Gohda, Yoshihiro Kubozono, Ritsuko Eguchi

    SCIENTIFIC REPORTS   4   2014.5

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    Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)(2), formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, m, in a picene-(C14H29)(2) thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached similar to 21 cm(2) V-1 s(-1), which is the highest mu value recorded for organic thin-film FETs; the averagem mu value (&lt;mu &gt;) evaluated from twelve FET devices was 14(4) cm(2)V(-1) s(-1). The, m. values for picene-(C14H29)(2) thin- film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm(2) V-1 s(-1), and the lowest absolute threshold voltage, vertical bar V-th vertical bar, (5.2 V) was recorded with a PZT gate dielectric; the average jVthj for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)(2) FET was also fabricated with an SiO2 gate dielectric, yielding mu = 3.4 x 10(-2) cm(2) V-1 s(-1). These results verify the effectiveness of picene-(C14H29)(2) for electronics applications.

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  • Superconducting phases in (NH3)(y)MxFeSe1-zTez (M = Li, Na, and Ca) Reviewed

    Yusuke Sakai, Lu Zheng, Masanari Izumi, Kazuya Teranishi, Ritsuko Eguchi, Hidenori Goto, Taiki Onji, Shingo Araki, Tatsuo C. Kobayashi, Yoshihiro Kubozono

    PHYSICAL REVIEW B   89 ( 14 )   2014.4

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    Superconducting phases of (NH3)(y)MxFeSe1-z Te-z have been synthesized by the intercalation of metal atoms (M: Li, Na, Ca) into FeSe and FeSe0.5Te0.5 using a low-temperature liquid NH3 technique. The superconducting transition temperature (T-c) is 31.5 K for Na-doped FeSe, and for Li-, Na-, and Ca-doped FeSe0.5Te0.5 it is 26, 22, and 17 K, respectively. The 31.5 K superconducting is the superconducting phase in ammoniated Na-doped FeSe. The T-c is lower than that (onset T-c = 46 K) of the superconducting phase reported previously. The reason why the T-c of this phase is lower is discussed based on the structure. The pressure dependences of T-c in the (NH3)(y)Na0.5FeSe and (NH3)(y)Na0.4FeSe0.5Te0.5 samples have been measured and a negative pressure dependence is observed; i.e., a decrease in lattice constant c leads to a decrease in Tc, consistent with the behavior of (NH3)(y)Cs0.4FeSe reported previously by our group. Furthermore, the magnetic behavior of (NH3)(y)Na0.4FeSe0.5Te0.5 has been fully investigated at different applied magnetic fields (H) to determine the critical magnetic This is a successful metal intercalation into FeSe1-z Te-z (z not equal 0) and an observation of superconductivity.

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  • Systematic Control of Hole-Injection Barrier Height with Electron Acceptors in [7]phenacene Single-Crystal Field-Effect Transistors Reviewed

    Xuexia He, Shino Hamao, Ritsuko Eguchi, Hidenori Goto, Yukihiro Yoshida, Gunzi Saito, Yoshihiro Kubozono

    JOURNAL OF PHYSICAL CHEMISTRY C   118 ( 10 )   5284 - 5293   2014.3

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    The interface between the single crystal and the Au source/drain electrodes in [7]phenacene single-crystal field-effect transistors (FETs) was modified using 14 electron acceptors with different redox potentials. The effective hole-injection barrier heights (phi(eff)(h)s) for [7]phenacene single-crystal FETs have been plotted as a function of the redox potential (E-redox) of the inserted electron acceptors, showing that the phi(eff)(h) decreases with increasing E-redox. The highest phi(eff)(h) occurs without inserted material (electron acceptors), and this deviates from the otherwise linear relationship between phi(eff)(h) and E-redox. We have investigated the temperature dependence of phi(eff)(h) in an attempt to determine why the phi(eff)(h) value without inserted material is so high, which suggests that no additional barrier, such as a tunneling barrier, is formed in the device. We conclude that the pure Schottky barrier in this FET is lowered very significantly by the insertion of an electron acceptor. The gate-voltage dependence of phi(eff)(h) suggests a slight reduction of Schottky barrier height owing to hole accumulation. Furthermore, the clear correlation between threshold voltage and redox potential suggests a relationship between threshold voltage and phi(eff)(h). Controlling the interface between the single crystal and the source/drain electrodes in this FET produced a very high mu (similar to 6.9 cm(2) V-1 s(-1)) and low absolute threshold voltage, i.e., excellent FET characteristics. The topological characterization of inserted materials on [7]phenacene single crystals are achieved using atomic force microscope (AFM) and X-ray diffraction (XRD). The results show that the single crystals are not completely covered with the inserted materials and the inhomogeneous modification of inserted materials for single crystals effectively leads to the drastic change of hole-injection barrier between source/drain electrodes and single-crystal active layer.

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  • Development of a single-shot CCD-based data acquisition system for time-resolved X-ray photoelectron spectroscopy at an X-ray free-electron laser facility Reviewed

    Masaki Oura, Tatsuya Wagai, Ashish Chainani, Jun Miyawaki, Hiromi Sato, Masaharu Matsunami, Ritsuko Eguchi, Takayuki Kiss, Takashi Yamaguchi, Yasuhiro Nakatani, Tadashi Togashi, Tetsuo Katayama, Kanade Ogawa, Makina Yabashi, Yoshihito Tanaka, Yoshiki Kohmura, Kenji Tamasaku, Shik Shin, Tetsuya Ishikawa

    JOURNAL OF SYNCHROTRON RADIATION   21   183 - 192   2014.1

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    In order to utilize high-brilliance photon sources, such as X-ray free-electron lasers (XFELs), for advanced time-resolved photoelectron spectroscopy (TR-PES), a single-shot CCD-based data acquisition system combined with a high-resolution hemispherical electron energy analyzer has been developed. The system's design enables it to be controlled by an external trigger signal for single-shot pump-probe-type TR-PES. The basic performance of the system is demonstrated with an offline test, followed by online core-level photoelectron and Auger electron spectroscopy in 'single-shot image', 'shot-to-shot image (image-to-image storage or block storage)' and 'shot-to-shot sweep' modes at soft X-ray undulator beamline BL17SU of SPring-8. In the offline test the typical repetition rate for image-to-image storage mode has been confirmed to be about 15 Hz using a conventional pulse-generator. The function for correcting the shot-to-shot intensity fluctuations of the exciting photon beam, an important requirement for the TR-PES experiments at FEL sources, has been successfully tested at BL17SU by measuring Au 4f photoelectrons with intentionally controlled photon flux. The system has also been applied to hard X-ray PES (HAXPES) in 'ordinary sweep' mode as well as shot-to-shot image mode at the 27 m-long undulator beamline BL19LXU of SPring-8 and also at the SACLA XFEL facility. The XFEL-induced Ti 1s core-level spectrum of La-doped SrTiO3 is reported as a function of incident power density. The Ti 1s core-level spectrum obtained at low power density is consistent with the spectrum obtained using the synchrotron source. At high power densities the Ti 1s core-level spectra show space-charge effects which are analysed using a known mean-field model for ultrafast electron packet propagation. The results successfully confirm the capability of the present data acquisition system for carrying out the core-level HAXPES studies of condensed matter induced by the XFEL.

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  • Electron dynamics probed by time-resolved hard X-ray photoelectron spectroscopy Reviewed

    M. Oura, L.-P. Oloff, A. Chainani, K. Rossnagel, M. Matsunami, R. Eguchi, T. Kiss, T. Yamaguchi, Y. Takatani, J. Miyawaki, K. Yamagami, M. Taguchi, T. Togashi, T. Katayama, K. Ogawa, M. Yabashi, T. Gejo, K. Myojin, K. Tamasaku, Y. Tanaka, T. Ishikawa

    Trans. Mat. Res. Soc. Jpn.   39   469 - 473   2014

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    DOI: 10.14723/tmrsj.39.469

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  • Parity effects in few-layer graphene Reviewed

    Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Yoshihiro Kubozono

    Nano Letters   13 ( 11 )   5153 - 5158   2013.11

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    We study the electronic properties in few-layer graphenes (FLGs) classified by even/odd layer number n. FLGs with even n have only parabolic energy dispersions, whereas FLGs with odd n have a linear dispersion besides parabolic ones. This difference leads to a distinct density of states in FLGs, experimentally confirmed by the gate-voltage dependence of the electric double-layer capacitance. Thus, FLGs with odd n are unique materials that have relativistic carriers originating in linear energy dispersion. © 2013 American Chemical Society.

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  • Superconductivity in (NH3)yCs0.4FeSe Reviewed

    Lu Zheng, Masanari Izumi, Yusuke Sakai, Ritsuko Eguchi, Hidenori Goto, Yasuhiro Takabayashi, Takashi Kambe, Taiki Onji, Shingo Araki, Tatsuo C. Kobayashi, Jungeun Kim, Akihiko Fujiwara, Yoshihiro Kubozono

    Physical Review B - Condensed Matter and Materials Physics   88 ( 9 )   2013.9

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    Alkali-metal-intercalated FeSe materials, (NH3) yM0.4FeSe (M: K, Rb, and Cs), have been synthesized using the liquid NH3 technique. (NH3)yCs 0.4FeSe shows a superconducting transition temperature (T c) as high as 31.2 K, which is higher by 3.8 K than the Tc of nonammoniated Cs0.4FeSe. The Tcs of (NH 3)yK0.4FeSe and (NH3) yRb0.4FeSe are almost the same as those of nonammoniated K0.4FeSe and Rb0.4FeSe. The Tc of (NH 3)yCs0.4FeSe shows a negative pressure dependence. A clear correlation between Tc and lattice constant c is found for ammoniated metal-intercalated FeSe materials, suggesting a correlation between Fermi-surface nesting and superconductivity. © 2013 American Physical Society.

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  • Fabrication of single crystal field-effect transistors with phenacene-type molecules and their excellent transistor characteristics Reviewed

    Xuexia He, Ritsuko Eguchi, Hidenori Goto, Eri Uesugi, Shino Hamao, Yasuhiro Takabayashi, Yoshihiro Kubozono

    ORGANIC ELECTRONICS   14 ( 6 )   1673 - 1682   2013.6

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    Single crystal field-effect transistors (FETs) using [6] phenacene and [7] phenacene show p-channel FET characteristics. Field-effect mobilities, mu s, as high as 5.6 x 10 (1) cm(2) V (1) s (1) in a [6] phenacene single crystal FET with an SiO2 gate dielectric and 2.3 cm(2) V (1) s (1) in a [7] phenacene single crystal FET were recorded. In these FETs, 7,7,8,8-tetracyanoquinodimethane (TCNQ) was inserted between the Au source/drain electrodes and the single crystal to reduce hole-injection barrier heights. The mu reached 3.2 cm(2) V (1) s (1) in the [7] phenacene single crystal FET with a Ta2O5 gate dielectric, and a low absolute threshold voltage vertical bar V-TH vertical bar (6.3 V) was observed. Insertion of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) in the interface produced very a high mu value (4.7-6.7 cm(2) V (1) s (1)) in the [7] phenacene single crystal FET, indicating that F(4)TCNQ was better for interface modification than TCNQ. A single crystal electric double-layer FET provided mu as high as 3.8 x 10 (1) cm(2) V (1) s (1) and vertical bar V-TH vertical bar as low as 2.3 V. These results indicate that [6] phenacene and [7] phenacene are promising materials for future practical FET devices, and in addition we suggest that such devices might also provide a research tool to investigate a material's potential as a superconductor and a possible new way to produce the superconducting state. (C) 2013 Elsevier B.V. All rights reserved.

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  • Electric double-layer capacitance between an ionic liquid and few-layer graphene Reviewed

    Eri Uesugi, Hidenori Goto, Ritsuko Eguchi, Akihiko Fujiwara, Yoshihiro Kubozono

    SCIENTIFIC REPORTS   3   2013.4

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    Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance C-g. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance C-EDL between the ionic liquid and graphene involves the series connection of C-g and the quantum capacitance C-q, which is proportional to the density of states. We investigated the variables that determine C-EDL at the molecular level by varying the number of graphene layers n and thereby optimising C-q. The C-EDL value is governed by C-q at n, 4, and by C-g at n &gt; 4. This transition with n indicates a composite nature for C-EDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor.

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  • Electric-double-layer transistors with thin crystals of FeSe1-xTex (x=0.9 and 1.0) Reviewed

    R. Eguchi, M. Senda, E. Uesugi, H. Goto, T. Kambe, T. Noji, Y. Koike, A. Fujiwara, Y. Kubozono

    APPLIED PHYSICS LETTERS   102 ( 10 )   2013.3

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    Field-effect transistor (FET) devices using thin crystals of FeSe1-xTex (x = 0.9 and 1.0) have been fabricated with an electric-double-layer (EDL) capacitor. Despite the presence of substantial quantities of electron and hole carriers in the bulk due to the semimetallic electronic structure of FeSe1-xTex, we have observed p-channel depletion-type FET characteristics, in contrast to the n-channel normally on FET characteristics of a Bi2Se3 EDL FET. In FeSe1-xTex, the mobile carriers, holes, are depleted in the channel region by accumulating electrons, resulting in a decrease in conductivity. This result is consistent with the experimentally observed positive Hall coefficient at room temperature. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795626]

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  • Edge-Dependent Transport Properties in Graphene Reviewed

    Hidenori Goto, Eri Uesugi, Ritsuko Eguchi, Akihiko Fujiwara, Yoshihiro Kubozono

    NANO LETTERS   13 ( 3 )   1126 - 1130   2013.3

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    Graphene has two kinds of edges which have different electronic properties. A singular electronic state emerges at zigzag edges, while it disappears at armchair edges. We study the edge-dependent transport properties in few-layer graphene by applying a side gate voltage to the edge with an ionic liquid. The devices indicating a conductance peak at the charge neutrality point have zigzag edges, confirmed by micro-Raman spectroscopy mapping. The hopping transport between zigzag edges increases the conductance.

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  • Observation of zero resistivity in K-doped picene Reviewed

    Kazuya Teranishi, Xuexia He, Yusuke Sakai, Masanari Izumi, Hidenori Goto, Ritsuko Eguchi, Yasuhiro Takabayashi, Takashi Kambe, Yoshihiro Kubozono

    PHYSICAL REVIEW B   87 ( 6 )   2013.2

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    We report the observation of zero resistivity (rho) in a hydrocarbon superconductor, and describe the temperature dependence of rho in metal-doped hydrocarbons. The resistivity of K-doped picene (K(x)picene) has been recorded from pellet samples in a four-terminal measurement mode. A drop in rho is observed below 7 K for K(3.1)picene and below 11 K for K(3.5)picene, which clearly displays zero resistivity. The resistivity drop at 7 K is consistent with the superconducting critical temperature (T-c) obtained from the magnetic susceptibility of the 7 K phase of K(3)picene, while the drop at 11 K is inconsistent with the T-c's of both the 7 and 18 K phases of K(3)picene reported previously. The temperature dependence of rho for both samples exhibits granular-metal-like behavior in the normal state. DOI: 10.1103/PhysRevB.87.060505

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  • Quantifying covalency and metallicity in correlated compounds undergoing metal-insulator transitions Reviewed

    Ashish Chainani, Ayako Yamamoto, Masaharu Matsunami, Ritsuko Eguchi, Munetaka Taguchi, Yasutaka Takata, Hidenori Takagi, Shik Shin, Yoshinori Nishino, Makina Yabashi, Kenji Tamasaku, Tetsuya Ishikawa

    Physical Review B - Condensed Matter and Materials Physics   87 ( 4 )   45108   2013.1

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    The tunability of bonding character in transition-metal compounds controls phase transitions and their fascinating properties such as high-temperature superconductivity, colossal magnetoresistance, spin-charge ordering, etc. However, separating out and quantifying the roles of covalency and metallicity derived from the same set of transition-metal d and ligand p electrons remains a fundamental challenge. In this study, we use bulk-sensitive photoelectron spectroscopy and configuration-interaction calculations for quantifying the covalency and metallicity in correlated compounds. The method is applied to study the first-order temperature- (T-) dependent metal-insulator transitions (MITs) in the cubic pyrochlore ruthenates Tl2Ru2O 7 and Hg2Ru2O7. Core-level spectroscopy shows drastic T-dependent modifications which are well explained by including ligand-screening and metallic-screening channels. The core-level metallic-origin features get quenched upon gap formation in valence band spectra, while ionic and covalent components remain intact across the MIT. The results establish temperature-driven Mott-Hubbard MITs in three-dimensional ruthenates and reveal three energy scales: (a) 4d electronic changes occur on the largest (∼eV) energy scale, (b) the band-gap energies/charge gaps (Eg∼160-200 meV) are intermediate, and (c) the lowest-energy scale corresponds to the transition temperature TMIT (∼10 meV), which is also the spin gap energy of Tl2Ru2O7 and the magnetic-ordering temperature of Hg2Ru2O 7. The method is general for doping- and T-induced transitions and is valid for V2O3, CrN, La1-xSr xMnO3, La2-xSrxCuO4, etc. The obtained transition-metal-ligand (d-p) bonding energies (V∼45-90 kcal/mol) are consistent with thermochemical data, and with energies of typical heteronuclear covalent bonds such as C-H, C-O, C-N, etc. In contrast, the metallic-screening energies of correlated compounds form a weaker class (V *∼10-40 kcal/mol) but are still stronger than van der Waals and hydrogen bonding. The results identify and quantify the roles of covalency and metallicity in 3d and 4d correlated compounds undergoing metal-insulator transitions. © 2013 American Physical Society.

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  • Phenanthro[1,2-b: 8,7-b '] dithiophene: a new picene-type molecule for transistor applications Reviewed

    Yasushi Nishihara, Megumi Kinoshita, Keita Hyodo, Yasuhiro Okuda, Ritsuko Eguchi, Hidenori Goto, Shino Hamao, Yasuhiro Takabayashi, Yoshihiro Kubozono

    RSC ADVANCES   3 ( 42 )   19341 - 19347   2013

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    A new picene-type molecule, phenanthro[1,2-b : 8,7-b'] dithiophene, has been synthesized for use in organic field-effect transistors (OFETs). The molecule consists of a phenanthrene core with two thiophene rings fused on the ends. This molecule can be recognized as a picene analogue. The electronic structure of the molecule was determined by its optical absorption spectrum together with a theoretical calculation based on density functional theory (DFT). The topological and electronic structures of thin films produced by direct thermal evaporation of the compounds and by deposition from a solution were characterized by optical imaging, X-ray diffraction, and atomic force microscopy. FET devices were fabricated with these thin films, and showed field-effect mobility as high as 10(-1) cm(2) V-1 s(-1).

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  • Electronic structure and surface morphology of [6,6]-phenyl-C 71-butyric acid methyl ester films Reviewed

    Ayumi Nogimura, Kouki Akaike, Rie Nakanishi, Ritsuko Eguchi, Kaname Kanai

    Organic Electronics: physics, materials, applications   14 ( 12 )   3222 - 3227   2013

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    We investigate the electronic structure of [6,6]-phenyl-C 71-butyric acid methyl ester (PC70BM) films by ultraviolet photoelectron and inverse photoemission spectroscopy. We discuss the electronic structure of PC70BM in comparison with C70 and [6,6]-phenyl-C61-butyric acid methyl ester (PC60BM). The molecular orbitals around the energy gap of PC70BM are broadly distributed due to the low symmetry of the molecular structure. Consequently, the energy gap of PC70BM is smaller than that of C70 and PC60BM. The film deposition method affects the polarization energy between the PC70BM molecules, and thus affects the electronic structure of the films. © 2013 Published by Elsevier B.V.

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  • Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films Reviewed

    Ritsuko Eguchi, Xuexia He, Shino Hamao, Hidenori Goto, Hideki Okamoto, Shin Gohda, Kaori Sato, Yoshihiro Kubozono

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   15 ( 47 )   20611 - 20617   2013

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    Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm(2) V-1 s(-1), which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggesting negligible contact resistance at 300 K. FET characteristics were investigated using two-probe and four-probe measurement modes at 50-300 K. The two-probe mobility of the saturation regime can be explained by the multiple shallow trap and release model, while the intrinsic mobility obtained by the four-probe measurement in the linear regime is better explained by the phenomenon of transport with charge carrier scattering at low temperatures. The FET device fabricated with a parylene gate dielectric on polyethylene terephthalate possesses both transparency and flexibility, implying feasibility of practical application of [6] phenacene FETs in flexible/transparent electronics. N-channel FET characteristics were also achieved in the [6] phenacene thin-film FETs using metals that possess a small work function for use as source/drain electrodes.

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  • Synthesis and physical properties of metal-doped picene solids Reviewed

    Takashi Kambe, Xuexia He, Yosuke Takahashi, Yusuke Yamanari, Kazuya Teranishi, Hiroki Mitamura, Seiji Shibasaki, Keitaro Tomita, Ritsuko Eguchi, Hidenori Goto, Yasuhiro Takabayashi, Takashi Kato, Akihiko Fujiwara, Toshikaze Kariyado, Hideo Aoki, Yoshihiro Kubozono

    PHYSICAL REVIEW B   86 ( 21 )   2012.12

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    We report electronic-structure and physical properties of metal-doped picene as well as selective synthesis of the phase that exhibits 18-K superconducting transition. First, Raman scattering is used to characterize the number of electrons transferred from the dopants to picene molecules, where a softening of Raman scattering peaks enables us to determine the number of transferred electrons. From this, we have identified that three electrons are transferred to each picene molecule in the superconducting doped picene solids. Second, we report pressure dependence of T-c in 7- and 18-K phases of K(3)picene. The 7-K phase shows a negative pressure dependence, while the 18-K phase exhibits a positive pressure dependence which can not be understood with a simple phonon mechanism of BCS superconductivity. Third, we report a synthesis method for superconducting K(3)picene by a solution process with monomethylamine CH3NH2. This method enables us to prepare selectively the K(3)picene sample exhibiting 18-K superconducting transition. The method for preparing K(3)picene with T-c = 18 K found here may facilitate clarification of the mechanism of superconductivity.

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  • Characteristics of [6]phenacene thin film field-effect transistor Reviewed

    Noriko Komura, Hidenori Goto, Xuexia He, Hiroki Mitamura, Ritsuko Eguchi, Yumiko Kaji, Hideki Okamoto, Yasuyuki Sugawara, Shin Gohda, Kaori Sato, Yoshihiro Kubozono

    APPLIED PHYSICS LETTERS   101 ( 8 )   2012.8

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    Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility mu as high as 3.7 cm(2) V-1 s(-1). The similar O-2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O-2 sensing in [6]phenacene FET. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747201]

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  • O-2-exposure and light-irradiation properties of picene thin film field-effect transistor: A new way toward O-2 gas sensor Reviewed

    Yasuyuki Sugawara, Keiko Ogawa, Hidenori Goto, Shuhei Oikawa, Kouki Akaike, Noriko Komura, Ritsuko Eguchi, Yumiko Kaji, Shin Gohda, Yoshihiro Kubozono

    SENSORS AND ACTUATORS B-CHEMICAL   171   544 - 549   2012.8

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    Transistor characteristics and O-2 gas sensing properties are investigated for picene thin film field-effect transistors (FETs) with ZrO2, Ta2O5, HfO2 and BaxSr1-xTiO3 (x = 0.4). The low-voltage operation is achieved using the above oxides with high gate dielectric constant, contrary to SiO2 gate dielectric. The O-2 gas sensing is achieved at 11 s intervals without any bias stress by an application of pulse drain and gate voltages (V-D and V-G), in contrast to previous result in which the O-2 gas sensing was performed at least at 1 h step because of bias stress effect. The actual O-2 sensing-speed in the picene thin film FET was similar to 10 s for 3.8 Torr O-2, and the O-2 sensing limit was concluded to be 0.15-0.38 Torr. Furthermore, it has been found that the O-2 sensing properties are observed only under irradiation of light with wavelength below 400 nm. From the result, we have presented two scenarios for O-2 sensing mechanism in picene thin film FET. (C) 2012 Elsevier B.V. All rights reserved.

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  • Photoemission Evidence for Valence Fluctuations and Kondo Resonance in YbAl2 Reviewed

    Masaharu Matsunami, Ashish Chainani, Munetaka Taguchi, Ritsuko Eguchi, Yasutaka Takata, Masaki Oura, Makina Yabashi, Kenji Tamasaku, Yoshinori Nishino, Tetsuya Ishikawa, Masashi Kosaka, Shik Shin

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   81 ( 7 )   2012.7

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    We use hard x-ray photoemission spectroscopy (HAXPES) to investigate the electronic structure of YbAl2, for which the Yb valence has not been consistently reported to date. The bulk sensitivity and the analytical simplicity provided by the Yb 3d core-level HAXPES allow a reliable determination of the mean valence of Yb ions. For YbAl2, it is evaluated to be +2.20, which remains nearly unchanged below 300 K. The Kondo resonance peak with an extremely high Kondo temperature (above 2000 K) is clearly identified in the valence-band spectra. The results indicate that a coherent Kondo state can be robust even in a nearly divalent system.

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  • Characteristics of Single Crystal Field-Effect Transistors with a New Type of Aromatic Hydrocarbon, Picene Reviewed

    Nobuyuki Kawai, Ritsuko Eguchi, Hidenori Goto, Kouki Akaike, Yumiko Kaji, Takashi Kambe, Akihiko Fujiwara, Yoshihiro Kubozono

    JOURNAL OF PHYSICAL CHEMISTRY C   116 ( 14 )   7983 - 7988   2012.4

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    Picene is a phenacene-type aromatic hydrocarbon molecule with five benzene rings. We have fabricated picene single crystal (SC) field-effect transistors (FETs) with solid gate and ionic liquid gate dielectrics. Although the picene SC FET showed a large hole-injection barrier without any modification of interface between source/drain electrodes and picene SC, such a large hole-injection barrier could be effectively reduced by modifying the interface with tetracyanoquinodimethane (TCNQ). Picene SC FET with an HfO2 gate dielectric and TCNQ:coated electrodes shows p-channel characteristics with a smooth hole injection and a field-effect mobility more than 1 cm(2) V-1 s(-1) in two-terminal measurement. Picene SC FET could be operated even in bottom-contact structure by modifying the interface with octanethiol. Furthermore, picene SC FET operated with ionic liquid gate dielectric, [1-butyl-3-methylimidazolium][hexafluorophosphate], showing the field-effect mobility of 1.8 X 10(-1) cm(2) V-1 s(-1) and low absolute value, 1.9 V, of threshold voltage.

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  • Characteristics of conjugated hydrocarbon based thin film transistor with ionic liquid gate dielectric Reviewed

    Yumiko Kaji, Keiko Ogawa, Ritsuko Eguchi, Hidenori Goto, Yasuyuki Sugawara, Takashi Kambe, Koki Akaike, Shin Gohda, Akihiko Fujiwara, Yoshihiro Kubozono

    ORGANIC ELECTRONICS   12 ( 12 )   2076 - 2083   2011.12

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    Thin film transistors (TFTs) with ionic liquid gate dielectrics, [1-ethyl-3-methylimidazolium][bis(trifluoromethanesulfonyl) imide] (emim[TFSI]) and [1-butyl-3-methylimidazolium][hexafluorophosphate] (bmim[PF6]), are fabricated with thin films of one dimensional (1D) hydrocarbon, [7]phenacene. P-channel characteristics are observed for [7] phenacene TFTs with both ionic liquids by use of platinum electrode. The field-effect mobility mu for [7]phenacene TFT with bmim[PF6] was recorded to be 0.28 cm(2) V-1 s(-1). The value of absolute threshold voltage, vertical bar V-TH vertical bar, was less than 2.5 V, showing low-voltage operation. The accumulation of hole in the [7]phenacene TFTs with ionic liquids was confirmed from the voltage or time dependence of capacitance in metal-insulator-semiconductor structure, which shows that these TFTs operate electrochemically and the carriers are accumulated in the whole of [7]phenacene thin films. (C) 2011 Elsevier B. V. All rights reserved.

    DOI: 10.1016/j.orgel.2011.08.016

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  • Kondo resonance in PrTi2Al20: Photoemission spectroscopy and single-impurity Anderson model calculations Reviewed

    M. Matsunami, M. Taguchi, A. Chainani, R. Eguchi, M. Oura, A. Sakai, S. Nakatsuji, S. Shin

    PHYSICAL REVIEW B   84 ( 19 )   2011.11

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    The Kondo resonance at the Fermi level is well established for the electronic structure of Ce (4f(1) electron) and Yb (4f(1) hole)-based systems. In this work, we report complementary experimental and theoretical studies on the Kondo resonance in the Pr-based 4f(2) system, PrTi2Al20. Using Pr 3d-4f resonant photoemission spectroscopy and single-impurity Anderson model (SIAM) calculations including the full multiplets of Pr ions, we show that a 4f(2) system can also give rise to a Kondo resonance at the Fermi level. The Kondo resonance peak is experimentally observed through a final-state multiplet-dependent resonance and is reproduced with properly tuned hybridization strength in SIAM calculations.

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  • Electronic state of an organic molecular magnet: Soft x-ray spectroscopy study of alpha-TDAE-C-60 single crystal Reviewed

    Hitoshi Yamaoka, Takashi Kambe, Tohru Sato, Yukiaki Ishida, Masaharu Matsunami, Ritsuko Eguchi, Yasunori Senba, Haruhiko Ohashi

    PHYSICAL REVIEW B   84 ( 16 )   2011.10

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    Soft x-ray photoelectron spectroscopy was performed for alpha-TDAE-C-60 single crystal. A C 1s spectrum with a shakeup satellite of TDAE-C-60 is very similar to that of C-60 when we shift the energy, indicating a charge transfer to the C-60 site. A comparison of a N 1s spectrum with theoretical calculations indicates that TDAE mainly consists of the TDAE(+) state. The valence-band spectrum near the Fermi edge also suggests a charge transfer from the TDAE to the C-60 cage. Based on these results we propose a modified model for the charge transfer: the charge states of C-60(-) and TDAE(+), and the dimer formation along the c axis between the TDAE(+) states.

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  • Electronic structure of an antiferromagnetic metal: CaCrO3 Reviewed

    P. A. Bhobe, A. Chainani, M. Taguchi, R. Eguchi, M. Matsunami, T. Ohtsuki, K. Ishizaka, M. Okawa, M. Oura, Y. Senba, H. Ohashi, M. Isobe, Y. Ueda, S. Shin

    PHYSICAL REVIEW B   83 ( 16 )   2011.4

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    We report on the electronic structure of the perovskite oxide CaCrO3 using valence-band, core-level, and Cr 2p-3d resonant photoemission spectroscopy (PES). Despite its antiferromagnetic order, a clear Fermi edge characteristic of a metal with dominant Cr 3d character is observed in the valence-band spectrum. The Cr 3d single-particle density of states are spread over 2 eV, with the photoemission spectral weight distributed in two peaks centered at similar to 1.2 and 0.2 eV below E-F, suggestive of the coherent and incoherent states resulting from strong electron-electron correlations. Resonant PES across the Cr 2p-3d threshold identifies a "two-hole" correlation satellite and yields an on-site Coulomb energy U similar to 4.8 eV. The metallic DOS at E-F is also reflected through the presence of a well-screened feature at the low binding energy side of the Cr 2p core-level spectrum. X-ray-absorption spectroscopy at Cr L-3,L-2 and O K edges exhibit small temperature-dependent changes that point toward a small change in Cr-O hybridization. The Cr 2p core-level spectrum can be reproduced using cluster model calculations that include a charge transfer from the metallic screening channel at E-F. The overall results indicate that CaCrO3 is a strongly hybridized antiferromagnetic metal, lying in the regime intermediate to Mott-Hubbard and charge-transfer systems.

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  • Electronic structure of YbGa1.15Si0.85 and YbGaxGe2-x probed by resonant x-ray emission and photoelectron spectroscopies Reviewed

    Hitoshi Yamaoka, Ignace Jarrige, Naohito Tsujii, Motoharu Imai, Jung-Fu Lin, Masaharu Matsunami, Ritsuko Eguchi, Masashi Arita, Kenya Shimada, Hirofumi Namatame, Masaki Taniguchi, Munetaka Taguchi, Yasunori Senba, Haruhiko Ohashi, Nozomu Hiraoka, Hirofumi Ishii, Ku-Ding Tsuei

    PHYSICAL REVIEW B   83 ( 10 )   2011.3

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    We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa1.15Si0.85 and nonsuperconducting ternary germanide YbGaxGe2-x (x = 1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa1.15Si0.85 no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb2+ state partially including itinerant electrons to the localized Yb3+ state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa1.15Si0.85 and YbGaxGe2-x, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa1.15Si0.85 and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.

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  • Femtosecond core-level photoemision spectroscopy on 1T-TaS2 using a 60-eV laser source Reviewed

    K. Ishizaka, T. Kiss, T. Yamamoto, Y. Ishida, T. Saitoh, M. Matsunami, R. Eguchi, T. Ohtsuki, A. Kosuge, T. Kanai, M. Nohara, H. Takagi, S. Watanabe, S. Shin

    PHYSICAL REVIEW B   83 ( 8 )   2011.2

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    Time-resolved photoelectron spectroscopy (trPES) can directly detect transient electronic structure, thus bringing out its promising potential to clarify nonequilibrium processes arising in condensed matters. Here we report the result of core-level trPES on 1T-TaS2, realized by developing a high-intensity 60-eV laser obtained by high-order harmonic generation. Ta4f core-level trPES offers the transient amplitude of the charge-density wave (CDW), via the site-selective and real-time observation of Ta electrons. The present result indicates an ultrafast photoinduced melting and recovery of CDW amplitude, followed by a peculiar long-life oscillation (i.e., collective amplitudon excitation) accompanying the transfer of electrons among adjacent Ta atoms. core-level trPES offers a broad range of opportunities for investigating the ultrafast atom-specific electron dynamics in photorelated phenomena of interest.

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  • Spectroscopic evidence of the formation of (V,Ti)O-2 solid solution in VO2 thinner films grown on TiO2(001) substrates Reviewed

    Y. Muraoka, K. Saeki, R. Eguchi, T. Wakita, M. Hirai, T. Yokoya, S. Shin

    JOURNAL OF APPLIED PHYSICS   109 ( 4 )   2011.2

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    We have prepared VO2 thin films epitaxially grown on TiO2(001) substrates with thickness systematically varied from 2.5 to 13 nm using a pulsed laser deposition method, and studied the transport property and electronic states of the films by means of resistivity and in situ synchrotron photoemission spectroscopy (SRPES). In resistivity measurements, the 13-nm-thick film exhibits a metal-insulator transition at around 290 K on cooling with change of three orders of magnitudes in resistivity. As the film thickness decreases, the metal-insulator transition broadens and the transition temperature increases. Below 4 nm, the films do not show the transition and become insulators. In situ SRPES measurements of near the Fermi level valence band find that the electronic state of the 2.5-nm-thick film is different than that of the temperature-induced insulator phase of VO2 itself although these two states are insulating. Ti 2p core-level photoemission measurements reveal that Ti ions exist near the interface between the films and TiO2 substrates, with a chemical state similar to that in (V,Ti)O-2 solid solution. These results indicate that insulating (V,Ti)O-2 solid solution is formed in the thinner films. We propose a simple growth model of a VO2 thin film on a TiO2(001) substrate. Near the interface, insulating (V,Ti) O-2 solid solution is formed due to the diffusion of Ti ions from the TiO2 substrate into the VO2 film. The concentration of Ti in (V,Ti) O-2 is relatively high near the interface and decreases toward the surface of the film. Beyond a certain film thickness (about 7 nm in the case of the present 13-nm-thick film), the VO2 thin film without any Ti ions starts to grow. Our work suggests that developing a technique for preparing the sharp interface between the VO2 thin films and TiO2 substrates is a key issue to study the physical property of an ultrathin film of "pure" VO2, especially to examine the presence of the novel electronic state called a semi-Dirac point phase predicted by calculations. (c) 2011 American Institute of Physics. [doi:10.1063/1.3549835]

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  • Characteristics of field-effect transistors using the one-dimensional extended hydrocarbon [7]phenacene Reviewed

    Yasuyuki Sugawara, Yumiko Kaji, Keiko Ogawa, Ritsuko Eguchi, Shohei Oikawa, Hiroyuki Gohda, Akihiko Fujiwara, Yoshihiro Kubozono

    APPLIED PHYSICS LETTERS   98 ( 1 )   2011.1

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    Field-effect transistors (FETs) with solid gate dielectrics are fabricated with thin films of the one-dimensional (1D) extended hydrocarbon [7]phenacene, which contains seven benzene rings. p-channel FET characteristics are observed for these FETs, with a mobility of 0.75 cm(2) V(-1) s(-1) at 100 Torr of O(2). The O(2) gas-sensing effect is examined for the [7]phenacene FET and for the 1D hydrocarbon picene FET. These FETs&apos; trap density and contact resistance are investigated with the multiple shallow trap and release model and the transfer line method. Unlike picene FETs, [7]phenacene FETs have few charge traps and are therefore air-stable. (C) 2011 American Institute of Physics. [doi:10.1063/1.3540648]

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  • Role of Ti 3d Carriers in Mediating the Ferromagnetism of Co:TiO2 Anatase Thin Films Reviewed

    T. Ohtsuki, A. Chainani, R. Eguchi, M. Matsunami, Y. Takata, M. Taguchi, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa, M. Oura, Y. Senba, H. Ohashi, S. Shin

    PHYSICAL REVIEW LETTERS   106 ( 4 )   2011.1

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    We study the surface and bulk electronic structure of the room-temperature ferromagnet Co:TiO2 anatase films using soft-and hard-x-ray photoemission spectroscopy with probe sensitivities of similar to 1 and similar to 10 nm, respectively. We obtain direct evidence of metallic Ti3+ states in the bulk, which get suppressed to give a surface semiconductor, thus indicating the difference in electronic structure between surface and bulk. X-ray absorption and resonant photoemission spectroscopy reveal Ti3+ electrons at the Fermi level (E-F) and high-spin Co2+ electrons occurring away from E-F. The results show the importance of the charge neutrality condition: Co2+ + V-O(2-) + 2Ti(4+) &lt;-&gt; Co2+ + 2Ti(3+) (V-O is oxygen vacancy), which gives rise to the elusive Ti 3d carriers mediating ferromagnetism via the Co 3d-O 2p-Ti 3d exchange interaction pathway of the occupied orbitals.

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  • Metal-intercalated aromatic hydrocarbons: a new class of carbon-based superconductors Reviewed

    Yoshihiro Kubozono, Hiroki Mitamura, Xuesong Lee, Xuexia He, Yusuke Yamanari, Yosuke Takahashi, Yuta Suzuki, Yumiko Kaji, Ritsuko Eguchi, Koki Akaike, Takashi Kambe, Hideki Okamoto, Akihiko Fujiwara, Takashi Kato, Taichi Kosugi, Hideo Aoki

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   13 ( 37 )   16476 - 16493   2011

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    New carbon-based superconductors are synthesized by intercalating metal atoms into the solid-phase hydrocarbons picene and coronene. The highest reported superconducting transition temperature, T-c, of a hydrocarbon superconductor is 18 K for K(3)picene. The physics and chemistry of the hydrocarbon superconductors are extensively described for Axpicene (A: alkali and alkali earth-metal atoms) for x = 0-5. The theoretical picture of their electronic structure is also reviewed. Future prospects for hydrocarbon superconductors are discussed from the viewpoint of combining electronics with condensed-matter physics: modification of the physical properties of hydrocarbon solids is explored by building them into a field-effect transistor. The features of other carbon-based superconductors are compared to clarify the nature of hydrocarbon superconductors.

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  • Angle-resolved photoemission spectroscopy for VO2 thin films grown on TiO2 (001) substrates Reviewed

    Y. Muraoka, K. Saeki, Y. Yao, T. Wakita, M. Hirai, T. Yokoya, R. Eguchi, S. Shin

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA   181 ( 2-3 )   249 - 251   2010.8

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    We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3-8 eV along the Gamma-Z direction. The periodicity of the dispersive band is found to be 2.2 A(-1) which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations. supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2. (C) 2010 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.elspec.2010.02.003

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  • Absence of nesting in the charge-density-wave system 1T-VS2 as seen by photoelectron spectroscopy Reviewed

    M. Mulazzi, A. Chainani, N. Katayama, R. Eguchi, M. Matsunami, H. Ohashi, Y. Senba, M. Nohara, M. Uchida, H. Takagi, S. Shin

    PHYSICAL REVIEW B   82 ( 7 )   2010.8

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    We report on the electronic structure and Fermi surfaces of the transition-metal dichalcogenide 1T-VS2 in the low-temperature charge-density-wave (CDW) ordered phase. Using soft x-ray angle-resolved photoemission spectroscopy (ARPES), we investigate the in-plane and out-of-plane vanadium-and sulfur-derived band dispersions and identify k(z) dispersions in this layered system. Core-level photoemission and x-ray absorption spectroscopy show that vanadium electrons are in the d(1) configuration while 2p-3d resonant ARPES shows only 3d-derived dispersive bands near the Fermi level. Comparison of energy-and angle-dependent data with band-structure calculations reveals renormalization of the 3d bands, but no lower Hubbard band, a signature of the rather weak electron-electron correlations in VS2. High-resolution temperature-dependent low-energy ARPES measurements show the opening of an energy gap at the Fermi level that is attributed to the condensation of the CDW phase. The results indicate a CDW transition in the absence of nesting for 1T-VS2

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  • Evidence for a Correlated Insulator to Antiferromagnetic Metal Transition in CrN Reviewed

    P. A. Bhobe, A. Chainani, M. Taguchi, T. Takeuchi, R. Eguchi, M. Matsunami, K. Ishizaka, Y. Takata, M. Oura, Y. Senba, H. Ohashi, Y. Nishino, M. Yabashi, K. Tamasaku, T. Ishikawa, K. Takenaka, H. Takagi, S. Shin

    PHYSICAL REVIEW LETTERS   104 ( 23 )   2010.6

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    We investigate the electronic structure of chromium nitride (CrN) across the first-order magneto-structural transition at T-N similar to 286 K. Resonant photoemission spectroscopy (PES) shows a gap in the 3d partial density of states at the Fermi level and an on-site Coulomb energy U similar to 4.5 eV, indicating strong electron-electron correlations. Bulk-sensitive high-resolution (6 meV) laser PES reveals a clear Fermi edge indicating an antiferromagnetic metal below T-N. Hard x-ray Cr 2p core-level PES shows T-dependent changes across T-N which originate from screening due to coherent states as substantiated by cluster model calculations using the experimentally observed U. Electrical resistivity confirms an insulator above T-N (E-g similar to 70 meV) becoming a disordered metal below T-N. Thus, CrN transforms from a correlated insulator to an antiferromagnetic metal, coupled to the magnetostructural transition.

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  • Electronic structure of SrRu1-xMnxO3 studied by photoemission and x-ray absorption spectroscopy Reviewed

    K. Horiba, H. Kawanaka, Y. Aiura, T. Saitoh, C. Satoh, Y. Kikuchi, M. Yokoyama, Y. Nishihara, R. Eguchi, Y. Senba, H. Ohashi, Y. Kitajima, S. Shin

    PHYSICAL REVIEW B   81 ( 24 )   2010.6

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    In order to investigate the change in the electronic structure with Mn doping of SrRu1-xMnxO3 (SRMO), we have performed soft x-ray synchrotron photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). In the soft x-ray PES spectra, the sharp peak structure near the Fermi level (E-F), which was clearly observed in SrRuO3, was suppressed accompanied with Mn doping in SRMO. In the Mn 2p XAS and Mn 2p-3d resonant PES spectra, we have confirmed the existence of Mn3+ ions with the electron doping to Mn 3d e(g) states and Mn 3d partial density of state never have finite intensity at E-F in SRMO. These results suggest that the metal-insulator transition of SRMO with Mn doping is originated from the charge transfer from the itinerant Ru 4d t(2g) bands to the localized Mn 3d e(g) orbitals.

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  • Strong Valence Fluctuation in the Quantum Critical Heavy Fermion Superconductor beta-YbAlB4: A Hard X-Ray Photoemission Study Reviewed

    M. Okawa, M. Matsunami, K. Ishizaka, R. Eguchi, M. Taguchi, A. Chainani, Y. Takata, M. Yabashi, K. Tamasaku, Y. Nishino, T. Ishikawa, K. Kuga, N. Horie, S. Nakatsuji, S. Shin

    PHYSICAL REVIEW LETTERS   104 ( 24 )   2010.6

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    Electronic structures of the quantum critical superconductor beta-YbAlB4 and its polymorph alpha-YbAlB4 are investigated by using bulk-sensitive hard x-ray photoemission spectroscopy. From the Yb 3d core level spectra, the values of the Yb valence are estimated to be similar to 2.73 and similar to 2.75 for alpha- and beta-YbAlB4, respectively, thus providing clear evidence for valence fluctuations. The valence band spectra of these compounds also show Yb2+ peaks at the Fermi level. These observations establish an unambiguous case of a strong mixed valence at quantum criticality for the first time among heavy fermion systems, calling for a novel scheme for a quantum critical model beyond the conventional Doniach picture in beta-YbAlB4.

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  • Anomalous State Sandwiched between Fermi Liquid and Charge Ordered Mott-Insulating Phases of Ti4O7 Reviewed

    M. Taguchi, A. Chainani, M. Matsunami, R. Eguchi, Y. Takata, M. Yabashi, K. Tamasaku, Y. Nishino, T. Ishikawa, S. Tsuda, S. Watanabe, C. -T. Chen, Y. Senba, H. Ohashi, K. Fujiwara, Y. Nakamura, H. Takagi, S. Shin

    PHYSICAL REVIEW LETTERS   104 ( 10 )   2010.3

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    The Magneli phase Ti4O7 exhibits two sharp jumps in resistivity with coupled structural transitions as a function of temperature at T-c1 similar to 142 K and T-c2 = 154 K. We have studied electronic structure changes across the two transitions using 7 eV laser, soft x-ray, and hard x-ray (HX) photoemission spectroscopy (PES). Ti 2p - 3d resonant PES and HX PES show a clear metallic Fermi edge and mixed valency above T-c2. The low temperature phase below T-c1 shows a clear insulating gap of similar to 100 meV. The intermediate phase between T-c1 and T-c2 indicates a pseudogap coexisting with remnant coherent states. HX PES and complementary calculations have confirmed the coherent screening in the strongly correlated intermediate phase. The results suggest the existence of a highly anomalous state sandwiched between the mixed-valent Fermi liquid and charge ordered Mott-insulating phase in Ti4O7.

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  • Resonant Photoemission Spectroscopy of Layered Triangular Lattices Ag2MO2 (M = Ni and Mn): Evidence for M 3d States at Fermi Level Reviewed

    Ritsuko Eguchi, Hiroyuki Yoshida, Yoshihiko Okamoto, Ashish Chainani, Masaharu Matsunami, Yukiaki Ishida, Masaki Oura, Yasunori Senba, Haruhiko Ohashi, Shik Shin, Zenji Hiroi

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   79 ( 2 )   2010.2

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    We report oil the soft X-ray photoemission and absorption spectroscopy of Ag2NiO2 and Ag2MnO2, which consist of' alternate stacks of (Ag-2)(+) and (MO2)(-) layers. The core-level photoemission and absorption spectra indicate mainly trivalent Ni3+ in Ag2NiO2, and trivalent Mn3+ With an admixture of Mn2+ states in Ag2MnO2. The M 2p-3d resonant photoemission clearly shows that the density of states at the Fermi level includes the M 3d character in both compounds. The results indicate that the Ni 3d and Mn 3d states at the Fermi level are responsible for the significant mass enhancement of carriers, as seen in the transport properties of Ag2NiO2 and Ag2MnO2.

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  • Band dispersion near the Fermi level for VO2 thin films grown on TiO2 (001) substrates Reviewed

    K. Saeki, T. Wakita, Y. Muraoka, M. Hirai, T. Yokoya, R. Eguchi, S. Shin

    PHYSICAL REVIEW B   80 ( 12 )   2009.9

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    We have performed angle-resolved photoemission spectroscopy (ARPES) measurements of VO2 using epitaxial thin films and observed the band dispersion near the Fermi level (E-F) for this compound. The VO2 thin films have been grown on TiO2 (001) single-crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive features in the binding-energy range of 3-8 eV along the Gamma-Z direction. Also, the V 3d state shows two dispersive bands around the Gamma point near E-F, indicative of two electron pockets centered at the Gamma point. Both electron pockets have an occupied bandwidth of about 0.4 eV. Assuming the parabolic energy bands around the Gamma point, the effective-mass ratios of the two electron pockets are estimated to be about 0.2 and 1. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2 and thus would play a crucial role to elucidate the mechanism of the MIT in VO2.

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  • Evidence for oxygen holes due to d-p rehybridization in thermoelectric Sr1-xRh2O4 Reviewed

    Y. Ishida, T. Baba, R. Eguchi, M. Matsunami, M. Taguchi, A. Chainani, Y. Senba, H. Ohashi, Y. Okamoto, H. Takagi, S. Shin

    PHYSICAL REVIEW B   80 ( 8 )   2009.8

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    Soft-x-ray photoemission and absorption spectroscopies are employed to investigate the electronic structures of Sr1-xRh2O4. Similar to the layered cobaltates such as Na1-xCoO2, a valence-band satellite feature (VBS) occurs at higher binding energy to the O 2p band. We find that the VBS resonates at the O 1s edge. Additionally, core absorption shows clear x dependence in the O 1s edge rather than in the Rh 3p edge. These results indicate that the holes in the initial state mainly have O 2p character presumably due to d-p rehybridizations affected by Sr2+ vacancy potentials. The resultant inhomogeneous charge texture may have impact on the thermoelectric transport properties at low x.

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  • Ishizaka et al. Reply Reviewed

    K. Ishizaka, R. Eguchi, S. Tsuda, A. Chainani, T. Yokoya, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C. -T. Chen, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin

    PHYSICAL REVIEW LETTERS   102 ( 19 )   2009.5

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    A Reply to the Comment by J. D. Lee et al..

    DOI: 10.1103/PhysRevLett.102.199702

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  • Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films Reviewed

    R. Eguchi, Y. Okamoto, Z. Hiroi, S. Shin, A. Chainani, Y. Tanaka, M. Matsunami, Y. Takata, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa

    JOURNAL OF APPLIED PHYSICS   105 ( 5 )   2009.3

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    We study epitaxial NdNiO3 thin films on NdGaO3(001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at T-MI similar to 240 K, which is significantly higher than T-MI similar to 190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.

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  • Fermi surfaces, electron-hole asymmetry, and correlation kink in a three-dimensional Fermi liquid LaNiO3 Reviewed

    R. Eguchi, A. Chainani, M. Taguchi, M. Matsunami, Y. Ishida, K. Horiba, Y. Senba, H. Ohashi, S. Shin

    PHYSICAL REVIEW B   79 ( 11 )   2009.3

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    We report the three-dimensional (3D) momentum-resolved soft x-ray photoemission spectroscopy of the Fermi liquid LaNiO3. The out-of-plane and in-plane cuts of the 3D electron- and hole-Fermi surfaces (FSs) are observed by energy- and angle-dependent photoemission measurements. The energy bands forming the electron FS suggest an omega(2) dependence of the imaginary part of the self-energy and a "correlation kink" at an energy scale of 0.25 eV. In contrast, the bands which form nesting character hole FSs do not show kinks and match local-density approximation calculations. The results indicate a momentum-dependent mass renormalization, leading to electron-hole asymmetry in strongly correlated LaNiO3.

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  • Anomalous Duality of 4f Electrons in Filled Skutterudite CeOs4Sb12 Reviewed

    M. Matsunami, R. Eguchi, T. Kiss, K. Horiba, A. Chainani, M. Taguchi, K. Yamamoto, T. Togashi, S. Watanabe, X. -Y. Wang, C. -T. Chen, Y. Senba, H. Ohashi, H. Sugawara, H. Sato, H. Harima, S. Shin

    PHYSICAL REVIEW LETTERS   102 ( 3 )   2009.1

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    We study the electronic structure of the filled skutterudite CeOs4Sb12 using photoemission spectroscopy (PES). Soft x-ray excited Ce 3d-4f resonant PES confirms the existence of Ce 4f states at the Fermi level (E-F). Temperature dependent high-resolution laser-PES spectra reveal a pseudogap formation around E-F, which can be explained in terms of the hybridization gap. Simultaneously, a sharp feature is formed just above E-F with decreasing temperature. The heavy-fermion-like specific heat is attributed to the occupation of this feature. The results identify the origin of the anomalous coexistence of heavy-fermion and pseudogap behavior in terms of a symmetry dependent hybridization.

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  • Low power density multihole cathode very-high-frequency plasma for mixed phase Si:H thin films Reviewed

    C. Jariwala, A. Chainani, R. Eguchi, M. Matsunami, S. Shin, S. Bhatt, V. Dalal, P. I. John

    APPLIED PHYSICS LETTERS   93 ( 19 )   2008.11

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    A low power density very-high-frequency (VHF) (55 MHz) H-2 plasma in a capacitively coupled multihole-cathode (MHC) geometry is studied using Langmuir probe measurements. Radial profiles show a higher ion density (N-i) and lower electron temperature (T-e) compared to a MHC 13.56 MHz H-2 plasma. The N-i dependence on power indicates an Ohmic plasma, while T-e is essentially constant. The MHC-VHF plasma is used to investigate mixed phase microcrystalline+amorphous (mu c+a-) Si:H thin films at a substrate temperature of 60 degrees C. High-resolution photoemission suggests two types of Si, with concentrations in agreement with atomic force microscopy images showing similar to 510 +/- 40 nm crystallites embedded in a-Si:H matrix. The results show that the low power density MHC-VHF plasma is a high-N-i Ohmic collisional plasma, suitable for low temperature deposition of mu c+a-Si:H thin films.

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  • Combining photoemission and optical spectroscopies for reliable valence determination in YbS and Yb metal Reviewed

    M. Matsunami, A. Chainani, M. Taguchi, R. Eguchi, Y. Ishida, Y. Takata, H. Okamura, T. Nanba, M. Yabashi, K. Tamasaku, Y. Nishino, T. Ishikawa, Y. Senba, H. Ohashi, N. Tsujii, A. Ochiai, S. Shin

    PHYSICAL REVIEW B   78 ( 19 )   2008.11

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    Hard x-ray photoemission and optical spectroscopies have been performed on YbS and Yb metal to determine the precise f-electron occupation. A comparison of the photoemission spectra with the energy-loss functions in bulk and surface, obtained from optical reflectivity, enables us to distinguish between the energy-loss satellite of Yb2+ peak and the Yb3+ multiplet. The results clearly indicate a purely divalent Yb state except for the surface of YbS which is altered by oxidation. We demonstrate that the present method is highly reliable in identifying the electronic structure and the mean valence in f-electron systems.

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  • Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO(2) Reviewed

    R. Eguchi, M. Taguchi, M. Matsunami, K. Horiba, K. Yamamoto, Y. Ishida, A. Chainani, Y. Takata, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, Y. Senba, H. Ohashi, Y. Muraoka, Z. Hiroi, S. Shin

    PHYSICAL REVIEW B   78 ( 7 )   2008.8

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    The temperature (T)-dependent metal-insulator transition (MIT) in VO(2) is investigated using bulk sensitive hard-x-ray (similar to 8 keV) valence-band, core-level, and V 2p-3d resonant photoemission spectroscopies (PESs). The valence-band and core-level spectra are compared with full-multiplet cluster model calculations including a coherent screening channel. Across the MIT, V 3d spectral weight transfer from the coherent (3d(1)(C) under bar final) states at Fermi level to the incoherent (3d(0)+3d(1)(L) under bar final) states, corresponding to the lower Hubbard band, leads to gap formation. The spectral shape changes in V 1s and V 2p core levels as well as the valence band are nicely reproduced from cluster model calculations, providing electronic structure parameters. Resonant PES finds that the 3d(1)(L) under bar states resonate across the V 2p-3d threshold in addition to the 3d(0) and 3d(1)(C) under bar states. The results support a Mott-Hubbard transition picture for the first-order MIT in VO(2).

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  • Electronic structure of FeSi1-xGex and FeGa3 investigated by soft x-ray photoelectron spectroscopy complementary to x-ray emission spectroscopy Reviewed

    H. Yamaoka, M. Matsunami, R. Eguchi, Y. Ishida, N. Tsujii, Y. Takahashi, Y. Senba, H. Ohashi, S. Shin

    PHYSICAL REVIEW B   78 ( 4 )   2008.7

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    Soft x-ray photoelectron spectroscopy for FeSi1-xGex (x=0, 0.11, 0.19, 0.26, and 0.44) and FeGa3 was performed at Fe L absorption edge complementary to the x-ray emission spectroscopy. The absorption and valence-band spectra show the phase transition of the electronic state between x=0.26 and 0.44 in FeSi1-xGex accompanying the narrowing of the density of state near the Fermi edge. High-resolution x-ray absorption spectra (total electron yields) at Fe 2p(3/2) absorption edge resolve the fine structure, originated from the valence and Auger component of electrons. Resonant valence-band and constant initial-state spectra show Fano-type profile at Fe 2p(3/2) absorption edge only for the x=0.44 sample but not for the x=0 sample and FeGa3. The crossover point, where the Raman and Auger features mix, is near the Fe 2p absorption edge for both of the x=0 and 0.44 samples, showing the delocalized 3d states.

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  • Revisiting the valence-band and core-level photoemission spectra of NiO Reviewed

    M. Taguchi, M. Matsunami, Y. Ishida, R. Eguchi, A. Chainani, Y. Takata, M. Yabashi, K. Tamasaku, Y. Nishino, T. Ishikawa, Y. Senba, H. Ohashi, S. Shin

    PHYSICAL REVIEW LETTERS   100 ( 20 )   2008.5

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    We have reexamined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopies. The spectral weight of the lowest energy state was found to be enhanced in the bulk sensitive Ni 2p core-level spectrum. A configuration-interaction model including a bound state screening has shown agreement with the core-level spectrum and off- and on-resonance VB spectra. These results identify the lowest energy states in the core-level and VB spectra as the Zhang-Rice (ZR) doublet bound states, consistent with the spin-fermion model and recent ab initio calculations within dynamical mean-field theory. The results indicate that the ZR character first ionization (the lowest hole-addition) states are responsible for transport properties in NiO and doped NiO.

    DOI: 10.1103/PhysRevLett.100.206401

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  • Temperature-dependent localized excitations of doped carriers in superconducting diamond Reviewed

    K. Ishizaka, R. Eguchi, S. Tsuda, A. Chainani, T. Yokoya, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C. -T. Chen, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin

    PHYSICAL REVIEW LETTERS   100 ( 16 )   2008.4

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    Laser-excited photoemission spectroscopy is used to show that the doped carriers in metallic or superconducting diamond couple strongly to the lattice via high-energy (similar to 150 meV) optical phonons, with direct observations of localized Franck-Condon multiphonon sidebands appearing as Fermi-edge replicas. It exhibits a temperature-dependent spectral weight transfer from higher to lower energy sidebands and zero-phonon Fermi-edge states. The quantified coupling strength shows a systematic increase on lowering temperature, implicating its relation to the normal state transport and superconductivity.

    DOI: 10.1103/PhysRevLett.100.166402

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  • Observation of energy gap in FeGa3 Reviewed

    Naohito Tsujii, Hitoshi Yamaoka, Masaharu Matsunami, Ritsuko Eguchi, Yukiaki Ishida, Yasunori Senba, Haruhiko Ohashi, Shik Shin, Takao Furubayashi, Hideki Abe, Hideaki Kitazawa

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77 ( 2 )   2008.2

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    The existence of an energy gap around the Fermi energy is established experimentally for the intermetallic compound FeGa3. Fe-57 Mossbauer spectra measured at room temperature confirmed the absence of magnetic ordering. The temperature dependence of magnetic susceptibility, chi(T), measured on single-crystalline samples showed diamagnetic behavior below room temperature, and it increased exponentially with temperature above 500 K. Fitting to the high-temperature data yielded an energy gap A of 0.29-0.45 eV. Valence-band x-ray photoemission spectra directly revealed the energy gap, the size of which was estimated to be Delta < (similar to)under tilde> 0.8 eV. These results agree with the prediction by recent band calculations.

    DOI: 10.1143/JPSJ.77.024705

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  • Coherent and incoherent excitations of electron-doped SrTiO3 Reviewed

    Yukiaki Ishida, Ritsuko Eguchi, Masaharu Matsunami, Koji Horiba, Munetaka Taguchi, Ashish Chainani, Yasunori Senba, Haruhiko Ohashi, Hiromichi Ohta, Shik Shin

    PHYSICAL REVIEW LETTERS   100 ( 5 )   2008.2

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    Resonant photoemission at the Ti 2p and O 1s edges on a Nb-doped SrTiO3 thin film revealed that the coherent state (CS) at the Fermi level (E-F) had a mainly Ti 3d character whereas the incoherent in-gap state (IGS) positioned similar to 1.5 eV below E-F had a mixed character of Ti 3d and O 2p states. This indicates that the IGS is formed by a spectral-weight transfer from the CS and subsequent spectral-weight redistribution through d-p hybridization. We discuss the evolution of the excitation spectrum with 3d band filling and rationalize the IGS through a mechanism similar to that proposed by Haldane and Anderson.

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  • Recoil effect of photoelectrons in the Fermi edge of simple metals Reviewed

    Takata, Y., Kayanuma, Y., Oshima, S., Tanaka, S., Yabashi, M., Tamasaku, K., Nishino, Y., Matsunami, M., Eguchi, R., Chainani, A., Oura, M., Takeuchi, T., Senba, Y., Ohashi, H., Shin, S., Ishikawa, T.

    Physical Review Letters   101 ( 13 )   1 - 4   2008

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  • Electronic structure of LaNiO(3-x): An in situ soft x-ray photoemission and absorption study Reviewed

    K. Horiba, R. Eguchi, M. Taguchi, A. Chainani, A. Kikkawa, Y. Senba, H. Ohashi, S. Shin

    PHYSICAL REVIEW B   76 ( 15 )   2007.10

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    We study the electronic structure of LaNiO(3-x) thin films using in situ soft x-ray photoemission and absorption spectroscopy. The in situ high-resolution measurements reveal that states at and near the Fermi level (E(F)) in the occupied and unoccupied densities of states are very sensitive to the oxygen content and are directly related to a metal-insulator transition. The highest quality epitaxial films of LaNiO(3) show a temperature-dependent sharp peak at E(F). A detailed analysis of its electrical resistivity confirms a T(1.5) behavior over a large temperature range, which has been observed in earlier studies. Local density approximation band structure calculations indicate that the narrowing of the Ni d e(g) electron derived peak at E(F) cannot be reproduced by a strained crystal structure, suggesting a renormalization of electronic states at E(F) in LaNiO(3). The T-dependent spectral changes at E(F), coupled with the resistivity behavior and proximity to a metal-insulator transition, suggest the role of electron correlations in LaNiO(3).

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  • Electronic structure of 3d(1) configuration vanadium oxides studied by soft X-ray and hard X-ray photoemission spectroscopy Reviewed

    R. Eguchi, M. Taguchi, M. Matsunami, K. Horiba, K. Yamamoto, A. Chainani, Y. Takata, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, Y. Senba, H. Ohashi, I. H. Inoue, Y. Muraoka, Z. Hiroi, S. Shin

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA   156   421 - 425   2007.5

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    We investigate the electronic structure of 3d(1) configuration vanadium oxides (VO2, SrVO3 and CaVO3) using soft X-ray (SX) and hard X-ray (HX) photoemission spectroscopy (PES). The valence band spectra of VO2 in SX- and HX-PES clearly show the opening of a gap at E-F across the metal-insulator transition. Spectral changes in the V 2p and O 1s core levels were also observed. In addition, 3d(1) configuration correlated metals SrVO3 and CaVO3 are typical materials whose valence band spectra are compared with dynamical mean-field theory. The V 2p and V 1s core level HX-PES of SrVO3 and CaVO3 show clear additional well-screened features. These features originate from bulk screening by a coherent band at EF. These spectra are nicely reproduced by a cluster model calculation, indicating a difference of the parameter V* for the interaction strength between the central V 3d orbitals and the coherent band. (c) 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.elspec.2006.12.055

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  • In situ photoemission study of LaNiO3 thin films grown by pulsed laser deposition Reviewed

    K. Horiba, R. Eguchi, A. Taguchi, A. Chainani, A. Kikkawa, Y. Senba, H. Ohashi, S. Shin

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA   156   107 - 110   2007.5

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    We investigate the electronic structure of high-quality single-crystal LaNiO3(LNO) thin films using in situ photoemission spectroscopy (PES) in order to reveal the intrinsic electronic structure of LNO. The O ls X-ray absorption (XAS) spectrum, which have much deeper probing depth than that of PES measurement, is in good agreement with previous studies on polycrystalline LNO surfaces. The in situ valence band PES spectrum shows well-resolved Ni 3d-derived t(2g) and e(g) features, while earlier X-ray photoemission studies on polycrystals showed a single band peak. The narrow e(g)-derived feature exhibits enhanced intensity compared to local density approximation band structure calculations. The results are consistent with a renormalization of electronic states at E-F, in terms of the known enhanced effective mass. (C) 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.elspec.2006.12.048

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  • Hard X-ray and soft X-ray photoemission study of vanadium oxides Reviewed

    R. Eguchi, Y. Takata, M. Matsunami, K. Horiba, K. Yamamoto, M. Taguchi, A. Chainani, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, Y. Senba, H. Ohashi, I. H. Inoue, S. Shin

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS   310 ( 2 )   E289 - E291   2007.3

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    We study the electronic structure of Mott-Hubbard systems SrVO3 and CaVO3 with photoemission spectroscopy (PES) using hard Xrays (HX) (hv similar to 8 keV) and soft X-rays (SX) (hv similar to 900 eV). In HX-PES results, the V 2p core levels of SrVO3 and CaVO3 show clear additional intensity, which are not observed in SX-PES. These features originate from bulk screening by coherent states at Fermi level as observed in other 3d transition metal oxides. From the comparison between SrVO3 and CaVO3 in HX-PES, the intensity in SrVO3 is nearly similar to CaVO3. The results suggest screening from coherent states is more efficient in HX-PES compared to SX-PES. (c) 2006 Elsevier B.V. All rights reserved.

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  • Electronic structure of VO2/TiO2 : Nb upon photocarrier injection Reviewed

    R. Eguchi, S. Tsuda, T. Kiss, A. Chainani, Y. Muraoka, Z. Hiroi, S. Shin

    PHYSICAL REVIEW B   75 ( 7 )   2007.2

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    We study the photocarrier injected electronic structure of VO2/TiO2:Nb (equivalent to p-n junction) thin-film heterostructure using photoemission spectroscopy, across the temperature-dependent metal-insulator transition in VO2. The valence band of VO2 shifts systematically to higher binding energy upon photocarrier injection (PCI). In the insulating phase, the energy shift as a function of irradiated power matches the surface photovoltage (SPV) behavior, while in the metallic phase, the energy shift follows the SPV trend but is reduced due to recombination. The temperature dependence of the energy shift between 200 and 330 K varies nearly linearly with the SPV. The study provides evidence for hole doping from TiO2:Nb to VO2 by the PCI effect.

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  • Observation of a superconducting gap in boron-doped diamond by laser-excited photoemission spectroscopy Reviewed

    K. Ishizaka, R. Eguchi, S. Tsuda, T. Yokoya, A. Chainani, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C. -T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin

    PHYSICAL REVIEW LETTERS   98 ( 4 )   2007.1

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    We investigate the temperature (T)-dependent low-energy electronic structure of a boron-doped diamond thin film using ultrahigh resolution laser-excited photoemission spectroscopy. We observe a clear shift of the leading edge below T=11 K, indicative of a superconducting gap opening (Delta similar to 0.78 meV at T=4.5 K). The gap feature is significantly broad and a well-defined quasiparticle peak is lacking even at the lowest temperature of measurement (=4.5 K). We discuss our results in terms of disorder effects on the normal state transport and superconductivity in this system.

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  • A high-resolution soft X-ray photoemission apparatus combined with a laser molecular-beam epitaxy system at SPring-8 BL17SU Reviewed

    K. Horiba, R. Eguchi, N. Kamakura, K. Yamamoto, M. Matsunami, Y. Takata, Y. Senba, H. Ohashi, S. Shin

    SYNCHROTRON RADIATION INSTRUMENTATION, PTS 1 AND 2   879   1611 - +   2007

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    We have constructed a high-resolution synchrotron-radiation photoemission apparatus combined with a laser molecular-beam epitaxy (laser MBE) system in order to investigate the electronic structure of thin films. The system is installed at the newly-built soft x-ray undulator beamline BL17SU of SPring-8. Single crystal thin films fabricated by laser MBE can be transferred quickly into the photoemission chamber under ultra-high vacuum condition. The photoemission spectrometer is equipped for high-throughput and high energy-resolution angle-resolved photoemission measurements. High energy-resolution and stability of the bean-dine optics enable us to achieve the best total energy resolution of 51 meV at 867 eV excitation. The performance and characteristics of the system is demonstrated by showing results on LaNiO3 thin films.

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  • Bulk and surface sensitive high-resolution photoemission study of Mott-Hubbard systems SrVO3 and CaVO3 Reviewed

    R. Eguchi, T. Kiss, S. Tsuda, T. Shimojima, T. Mizokami, A. Chainani, S. Shin, I. H. Inoue, T. Togashi, S. Watanabe, C. Q. Zhang, C. T. Chen, M. Arita, K. Shimada, H. Namatame, M. Taniguchi

    PHYSICA B-CONDENSED MATTER   378-80   330 - 331   2006.5

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    We study the electronic structure of Mott-Hubbard systems SrVO3 and CaVO3 with bulk and surface sensitive high-resolution photoemission spectroscopy using low-energy photons (hv = 7-21 eV), including a VUV laser. A clear suppression of the density of states within similar to 0.2 eV of the Fermi level (E-F) is found. The coherent band in SrVO3 and CaVO3 is shown to consist of surface and bulk-derived features. The results indicate that the stronger distortion on the surface of CaVO3 compared to SrVO3 is directly reflected in the coherent DOS at EF, consistent with recent theory. (c) 2006 Elsevier B.V. All rights reserved.

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  • Bulk- and surface-sensitive high-resolution photoemission study of two mott-hubbard systems: SrVO3 and CaVO3 Reviewed

    R Eguchi, T Kiss, S Tsuda, T Shimojima, T Mizokami, T Yokoya, A Chainani, S Shin, IH Inoue, T Togashi, S Watanabe, CQ Zhang, CT Chen, M Arita, K Shimada, H Namatame, M Taniguchi

    PHYSICAL REVIEW LETTERS   96 ( 7 )   2006.2

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    We study the electronic structure of Mott-Hubbard systems SrVO3 and CaVO3 with bulk and surface-sensitive high-resolution photoemission spectroscopy, using a vacuum ultraviolet laser, synchrotron radiation, and a discharge lamp (h nu=7-21 eV). A systematic suppression of the density of states (DOS) within similar to 0.2 eV of the Fermi level (E-F) is found on decreasing photon energy, i.e., on increasing bulk sensitivity. The coherent band in SrVO3 and CaVO3 is shown to consist of surface and bulk-derived features, separated in energy. The stronger distortion on surface of CaVO3 compared to SrVO3 leads to a higher surface metallicity in the coherent DOS at E-F, consistent with recent theory.

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  • Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond Reviewed

    K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C. -T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   7   S17 - S21   2006

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    We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 x n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below T-c indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond. (c) 2006 NIMS and Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.stam.2006.05.008

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  • Photocarrier-injected electronic structure of VO2/TiO2 : Nb Reviewed

    R Eguchi, S Shin, A Fukushima, T Kiss, T Shimojima, Y Muraoka, Z Hiroi

    APPLIED PHYSICS LETTERS   87 ( 20 )   2005.11

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    We study the effect of photocarrier injection on the electronic structure of VO2/TiO2:Nb thin films using photoemission spectroscopy. The results indicate that the valence band and core electronic states of VO2 shift systematically to lower binding energy upon photocarrier injection, consistent with doping in a rigid-band picture. The shift in binding energy, and its saturation, follows the known photovoltage behavior. In addition, the V 3d states near E-F exhibit a redistribution/transfer of spectral weight, similar to the temperature dependent insulator to metal transition in VO2. The study provides evidence for hole-doping induced electronic structure changes due to the photocarriers in VO2. (C) 2005 American Institute of Physics.

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  • Direct observation of a neutral Mn acceptor in Ga1-xMnxAs by resonant x-ray emission spectroscopy Reviewed

    Ishiwata, Y, Takeuchi, T, Eguchi, R, Watanabe, M, Harada, Y, Kanai, K, Chainani, A, Taguchi, M, Shin, S, Debnath, MC, Souma, I, Oka, Y, Hayashi, T, Hashimoto, Y, Katsumoto, S, Iye, Y

    Physical Review B   71 ( 12 )   2005

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  • X-ray absorption and resonant photoemission spectroscopy of ZrB2 Reviewed

    S Tsuda, R Eguchi, A Kosuge, T Yokoya, A Fukushima, S Shin, A Chainaini, S Otani, Y Takano, K Togano, H Kito

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   392   259 - 262   2003.10

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    We have performed X-ray absorption and valence band photoemission spectroscopy on ZrB2, which has the same AlB2 structure of MgB2, to study the electronic structure. From X-ray absorption spectra near the B 1s-2p threshold, we found a small absorption edge at 188.23 eV with a negligible angular dependence upto 190 eV photon energy. This indicates that B 2p partial density of states near the Fermi level (E-F) is three dimensional, in sharp contrast to that of MgB2. Resonant photoemission study across the B 1s-2p threshold was found to be difficult due to a large contribution of Auger electrons. On the other hand, resonant photoemission across the Zr 3p-4d threshold does show small change in intensity within 4 eV of EF. This indicates that the occupied states near EF have substantial Zr 4d character. These observations are in relatively good agreement with band structure calculations. (C) 2003 Elsevier B.V. All rights reserved.

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  • Unoccupied electronic structure in the surface state of lightly doped SrTiO<inf>3</inf> by resonant inverse photoemission spectroscopy

    T. Higuchi, S. Nozawa, T. Tsukamoto, H. Ishii, R. Eguchi, Y. Tezukan, S. Yamaguchi, K. Kanai, S. Shin

    Physical Review B - Condensed Matter and Materials Physics   66 ( 15 )   1531051 - 1531054   2002.10

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    The unoccupied electronic structure in the surface state of lightly doped SrTiO3 has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the t2g and eg subbands of unoccupied Ti 3d state. A peak clarified by the Ti 3p → 3d resonance effect is observed at -6.1 eV above Fermi level (EF). The -6.1 eV peak is not found in the O 1 s x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the -6.1 eV peak suggests the correlation effect in the surface state of lightly doped SrTiO3.

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  • Unique identification of Zhang-Rice singlet excitation in Sr2CuO2Cl2 mediated by the O 1s core hole: Symmetry-selective resonant soft x-ray Raman scattering study

    Yoshihisa Harada, Kozo Okada, Ritsuko Eguchi, Akio Kotani, Hidenori Takagi, Tomoyuki Takeuchi, Shik Shin, Shik Shin

    Physical Review B - Condensed Matter and Materials Physics   66   1651041 - 1651045   2002.10

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    Zhang-Rice singlet excitation around 2 eV is observed, distinguished from Cu dd excitations, by a symmetry selective resonant soft x-ray Raman scattering (RSXRS) experiments at the O 1s edge excitation of Sr2CuO2Cl2. Well below N?el temperature the initial state of Sr2CuO2Cl2 is antiferromagnetic, and then the final state with the Zhang-Rice singlet is excited selectively when the photon polarization is conserved in the RSXRS process. We also observe a weak RSXRS structures around 0.5 eV in the controversial midinfrared region, taking advantage of extremely weak elastic scattering intensity in the O 1s edge. From its polarization dependence, it is interpreted to originate mainly from the two-spin-flip excitations.

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  • Probing oxygen and nitrogen bonding sites in chitosan by X-ray emission Reviewed

    EZ Kurmaev, S Shin, M Watanabe, R Eguchi, Y Ishiwata, T Takeuchi, A Moewes, DL Ederer, Y Gao, M Iwami, M Yanagihara

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA   125 ( 2 )   133 - 138   2002.8

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    We present X-ray fluorescence measurements of biopolymer chitosan [C6H11NO4](n) and chitosan cross-linked with ethylene glycol diglycidyl ether (EGDE). Changes in the fine structure of resonantly excited O Kalpha X-ray emission spectra (XES) of unmodified chitosan are attributed to the excitation of non-equivalent oxygen sites belonging to -OH, -O-functional groups. The comparison of the nonresonant nitrogen Ka XES of unmodified chitosan cross-linked with EGDE does not show any differences, which excludes the model of chemical structure according to which EGDE is linked to chitosan via the amine group. (C) 2002 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0368-2048(02)00094-4

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  • Photoemission study of pyrochlore superconductor Cd2Re2O7 Reviewed

    R Eguchi, T Yokoya, T Baba, M Hanawa, Z Hiroi, N Kamakura, Y Takata, H Harima, S Shin

    PHYSICAL REVIEW B   66 ( 1 )   2002.7

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    We report photoemission study of the pyrochlore superconductor Cd2Re2O7. The valence-band spectra show the Re 5d dominant band close to the Fermi level (E-F), consistent with the recent band calculations. Temperature-dependent study of the Re 5d band reveals a gradual change in spectral shape, as is seen from a gradual modification of difference spectra below 200 K. These results are related to another transition at 200 K reported from resistivity and susceptibility measurements and indicate that the transition involves a change in electronic structures of the Re 5d band near E-F.

    DOI: 10.1103/PhysRevB.66.012516

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  • Manganese concentration and low-temperature annealing dependence of Ga1-xMnxAs by x-ray absorption spectroscopy Reviewed

    Y Ishiwata, M Watanabe, R Eguchi, T Takeuchi, Y Harada, A Chainani, S Shin, T Hayashi, Y Hashimoto, S Katsumoto, Y Iye

    PHYSICAL REVIEW B   65 ( 23 )   2002.6

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    The Mn-site-projected electronic structure of the diluted magnetic semiconductors Ga1-xMnxAs (x=0.032, 0.038, 0.047, 0.052, 0.058) of as-grown and low-temperature (LT) annealed samples are systematically studied using high-resolution Mn 2p absorption spectroscopy. The study exhibits coexistence of the ferromagnetic Mn2+ ion and the paramagnetic Mn-As complex that transforms into the ferromagnetic component with LT annealing. The ratio of ferromagnetic to paramagnetic components is directly related to the x dependence of the hole density and ferromagnetic critical temperature.

    DOI: 10.1103/PhysRevB.65.233201

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  • Angle-resolved photoemission study of the mixed valence oxide V6O13: Quasi-one-dimensional electronic structure and its change across the metal-insulator transition Reviewed

    R Eguchi, T Yokoya, T Kiss, Y Ueda, S Shin

    PHYSICAL REVIEW B   65 ( 20 )   2002.5

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    We have performed angle-resolved photoemission spectroscopy of mixed valence oxide V6O13 that shows a metal-insulator transition (MIT) at similar or equal to150 K. In the metallic phase, we observe two bands near the Fermi level (E-F). One is a prominent band located around 0.8 eV and the other is a weak structure around 0.2 eV that shows dispersion toward E-F only along the b axis. Furthermore, though the momentum distribution curve at E-F shows a peak at kb/pi=0.29+/-0.01 indicative of a E-F crossing, the intensity of the band near E-F is strongly suppressed in the region of E-F. These observations indicate quasi-one-dimensional electronic states of V6O13, consistent with a highly anisotropic behavior observed from resistivity and optical conductivity measurements. Across the MIT, the band near E-F shifts to higher binding energy and becomes less dispersive, resulting in opening of an energy gap of 0.2 eV. We discuss some implications of the experimental results.

    DOI: 10.1103/PhysRevB.65.205124

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  • Polarization dependence of resonant soft X-ray emission spectra in Ce compounds Reviewed

    M Watanabe, Y Harada, M Nakazawa, Y Ishiwata, R Eguchi, T Takeuchi, A Kotani, S Shin

    SURFACE REVIEW AND LETTERS   9 ( 2 )   983 - 987   2002.4

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    The electronic structures of Ce compounds have been investigated by means of resonant soft X-ray emission spectroscopy (RXES) excited at resonant energy range of Ce 3d --&gt; 4f absorption. Polarization dependence of the RXES shows information on concerning electronic states. In CeO2, the Ce 4f --&gt; 3d RXES spectra are interpreted as electronic structures hybridized between 4fdegrees and 4f(1)(v) under bar states. Peaks appearing in the spectra are attributed to bonding, nonbonding, and antibonding states between those states, while the spectra of CeRh3 cannot be explained by only using the hybridization between 4f(degrees) and 4f(1)(v) under bar states. The spectra have large broad Raman peak, especially when the excitation photon energy is set at satellite of Ce 3d --&gt; 4f absorption. We attribute the origin of the broad Raman peak to hybridization states involving electron-hole pairs.

    DOI: 10.1142/S0218625X02003184

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  • Angle-resolved photoemission spectroscopy, optical conductivity, and soft X-ray Raman spectroscopy of quasi-one-dimensional V6O13

    Ritsuko Eguchi, Takayoshi Yokoya, Takayuki Kiss, Yutaka Ueda, Hiroyuki Tajima, Jun Yamazaki, Shik Shin

    Physica B: Condensed Matter   312-313   600 - 602   2002.3

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    DOI: 10.1016/s0921-4526(01)01186-3

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  • Observation of fluorapatite formation under hydrolysis of tetracalcium phosphate in the presence of KF by means of soft X-ray emission and absorption spectroscopy

    EZ Kurmaev, S Matsuya, S Shin, M Watanabe, R Eguchi, Y Ishiwata, T Takeuchi, M Iwami

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN MEDICINE   13 ( 1 )   33 - 36   2002.1

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    The effect of fluoride on the hydrolysis of tetracalcium phosphate (TTCP; Ca-4(PO4)(2)O) in 0.1 mol/l KH2PO4 containing 62-83 mmol/l KF was studied with the help of X-ray fluorescence measurements. Fluorine X-ray emission and absorption spectra of the final product of hydrolysis and reference samples (CaF2 and Ca-5(PO4)(3)F) were measured at Beamline BL-2C of Photon Factory (PF, Tsukuba). Based on these measurements we concluded that hydrolysis of TTCP in the presence of KF converts it into fluorapatite. Formation of CaF2, which is often found in the hydrolysis of hydroxyapatite at high fluoride concentration, was not observed. (C) 2002 Kluwer Academic Publishers.

    DOI: 10.1023/A:1013626316980

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  • Resonant soft x-ray emission spectroscopy of NiO across the Ni L-2,L-3 thresholds

    H Ishii, Y Ishiwata, R Eguchi, Y Harada, M Watanabe, A Chainani, S Shin

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   70 ( 6 )   1813 - 1816   2001.6

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    We study the electronic structure of NiO using resonant soft X-ray emission spectroscopy across the Ni L-2.3 thresholds. We observe inelastic (Raman) features within 10eV of the elastic peak energy. At the L-3 resonance, the features within 4eV are enhanced and can be directly assigned to the d-d multiplets of NiO, in correspondence to features observed in optical absorption spectra. Resonance enhancements of the triplet and singlet states resolved in energy confirm a spin-flip transition. Charge-transfer (CT) excitations are also clearly identified by resonance enhancement at photon energies corresponding to the satellites observed in the Ni L-2,L-3 X-ray absorption spectra.

    DOI: 10.1143/JPSJ.70.1813

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  • Polarization dependence of the soft X-ray raman scattering at the L edge of TiO2 Reviewed

    Y Harada, M Watanabe, R Eguchi, Y Ishiwata, M Matsubara, A Kotani, A Yagishita, S Shin

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA   114   969 - 973   2001.3

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    Polarization dependence of the soft X-ray Raman scattering was investigated at the Ti 2p absorption edge of TiO2. Strong Raman scattering features appear about 14 eV below elastic peaks with strong polarization dependence. These Raman scattering structures are charge transfer excitations to the antibonding state between 3d(1)(L) under bar and 3d(0) states, because they are enhanced when the incident photon energies are tuned at satellite structures of Ti 2p absorption spectrum. Broad Raman scattering structures are found between 3 eV and 10 eV below elastic peaks. They show weak polarization dependence and are assigned to be nonbonding type charge transfer excitations. (C) 2001 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0368-2048(00)00374-1

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  • Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors

    Katsumoto, S, Hayashi, T, Hashimoto, Y, Iye, Y, Ishiwata, Y, Watanabe, M, Eguchi, R, Takeuchi, T, Harada, Y, Shin, S, Hirakawa, K

    Materials Science and Engineering B-Solid State Materials For Advanced Technology   84 ( 1-2 )   88 - 95   2001

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    DOI: 10.1016/S0921-5107(01)00575-X

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  • Nature of magnetism in III-V based diluted magnetic semiconductors Reviewed

    Katsumoto, S, Hayashi, T, Hashimoto, Y, Iye, Y, Ishiwata, Y, Watanabe, M, Eguchi, R, Takeuchi, T, Harada, Y, Shin, S, Hirakawa, K, IPAP

    Proceedings of the 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications   2   2001

  • Soft X-ray emission and absorption spectra in the O K region of oxygen incorporated in microporous carbon Reviewed

    Y Muramatsu, Y Ueno, Y Ishiwata, R Eguchi, M Watanabe, S Shin, RCC Perera

    CARBON   39 ( 9 )   1399 - 1402   2001

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:PERGAMON-ELSEVIER SCIENCE LTD  

    Soft X-ray emission and absorption spectra in the O K region of oxygen incorporated in microporous carbon were measured using synchrotron radiation, in order to directly observe the oxygen and identify its chemical bonding states on the graphitic surface in microporous carbon. The O K X-ray emission spectrum exhibits a peak at 526 eV with a low-energy tail, and the absorption spectrum at the O K threshold exhibits a sharp peak at 531.5 eV and then rises from 535 eV. Spectral feature analysis using DV-Xa molecular orbital calculations show that the measured X-ray spectra are not sufficiently explained by H2O or typical substituents, such as -OH, -CHO, and -COOH, on the graphitic surfaces. (C) 2001 Elsevier Science Ltd. All rights reserved.

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  • 「Polarization dependence of soft-x-ray Raman scattering at the L edge of TiO2」(共著)

    Physical Review B   61 ( 19 )   12854 - 12859   2000

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Books

  • Physics and Chemistry of Carbon-Based Materials

    Editor, Yoshihiro Kubozono( Role: Joint author ,  Chapter 2: Graphite and Intercalated Compound Superconductors: Atomic and Electronic Structures (Ritsuko Eguchi and Fumihiko Matsui))

    Springer Nature  2019  ( ISBN:9789811334177

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    Total pages:332   Responsible for pages:1-28   Language:English Book type:Scholarly book

    DOI: 10.1007/978-981-13-3417-7

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  • 大学生の一般化学

    久保園芳博, 山﨑岳 共編書( Role: Joint author ,  2章)

    培風館  2016.3 

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MISC

  • Pressure dependence of superconductivity in alkali-Bi compounds

    HUAN Li, SUZUKI Ai, TAGUCHI Tomoya, GOTO Hidenori, EGUCHI Ritsuko, LIAO Yen-Fa, ISHII Hirofumi, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   76 ( 1 )   2021

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    日本物理学会講演概要集(CD-ROM)   76 ( 1 )   2021

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    ZHANG Yanting, EGUCHI Ritsuko, HAMAO Shino, GOTO Kenta, TANI Fumito, YAMAJI Minoru, KUBOZONO Yoshihiro, OKAMOTO Hideki

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   2021

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    日本物理学会講演概要集(CD-ROM)   75 ( 2 )   2020

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    田口倫也, WANG Yanan, LI Huan, 高林康裕, 林好一, 石井啓文, LIAO Yen-Fa, 江口律子, 後藤秀徳, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   75 ( 2 )   2020

  • 蛍光X線ホログラフィーによるグラファイト層間化合物超伝導体(Ca,K)C8の局所電子配列

    八方直久, 窪田昌史, 松下智裕, 細川伸也, 木村耕治, 林好一, YANG Xiaofan, 江口律子, 後藤秀徳, 久保園芳博

    日本放射光学会年会・放射光科学合同シンポジウム(Web)   33rd   2020

  • Pressure dependence of structure and superconductivity in Ba1-xNaxTi2Sb2O

    田口倫也, WANG Yanan, YANG Xiaofan, LI Huan, HE Tong, 高林康裕, 林好一, 石井啓文, LIAO Yen-Fa, 江口律子, 後藤秀徳, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020

  • Electronic properties of monolayer graphene under an electric field

    ZHI Lei, GOTO Hidenori, MIURA Akari, EGUCHI Ritsuko, NISHIKAWA Takao, TOKITO Shizuo, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   75 ( 2 )   2020

  • Structure and superconducting properties in multiple phases of (NH3)yMxFeSe (M: Ca, Sr and Ba) at ambient and high pressures

    LI Huan, WANG Yanan, YANG Xiaofan, TAGUCHI Tomoya, HE Tong, ZHI Lei, GOTO Hidenori, EGUCHI Ritsuko, ISHII Hirofumi, LIAO Yen-Fa, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020

  • Superconducting behavior of Ba1-xMxTi2(Sb1-yBiy)2O(M: alkali and lanthanide atoms)

    WANG Yanan, LI Huan, YANG Xiaofan, HE Tong, ZHI Lei, TAGUCHI Tomoya, EGUCHI Ritsuko, GOTO Hidenori, KUBOZONO Yoshihiro, LIAO Yen-Fa, ISHII Hirofumi

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020

  • Band engineering of bilayer graphene using electron-transfer and electric-field effects

    ZHI Lei, GOTO Hidenori, TAKAI Akihisa, EGUCHI Ritsuko, NISHIKAWA Takao, TOKITO Shizuo, KUBOZONO Yoshihiro

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020

  • 分子吸着によるグラフェンの散乱効果 II

    高井彰久, 後藤秀徳, ZHI Lei, 江口律子, 久保園芳博

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    日本物理学会講演概要集(CD-ROM)   71 ( 1 )   2016

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    上杉英里, 後藤秀徳, 江口律子, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   71 ( 1 )   2016

  • フェナセン系薄膜電界効果トランジスタの論理回路応用

    三上隆弘, 江口律子, 下侑馬, 浜尾志乃, 後藤秀徳, 岡本秀毅, 林靖彦, 久保園芳博

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   63rd   2016

  • Electronic state of few-layer graphene on self-assembled monolayers controlled by molecular adsorption

    Goto Hidenori, Uchiyama Takaki, Akiyoshi Hidehiko, Uesugi Eri, Eguchi Ritsuko, Saito Gunzi, Yoshida Yukihiro, Osada Hiroshi, Nishikawa Takao, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   71 ( 2 )   1691 - 1691   2016

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    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.71.2.0_1691

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    J-GLOBAL

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  • Superconducting properties of (NH3)yNaxFeSe under high pressure

    Terao Takahiro, Zheng Lu, Miao Xiao, Uesugi Eri, Miyazaki Takahumi, Goto Hidenori, Eguchi Ritsuko, Kagayama Tomoko, Shimizu Katsuya, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   71 ( 2 )   2174 - 2174   2016

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    DOI: 10.11316/jpsgaiyo.71.2.0_2174

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  • 有機分子吸着によるグラフェンへのキャリア蓄積

    秋吉秀彦, 後藤秀徳, 上杉英里, 江口律子, 吉田幸大, 齋藤軍治, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 高性能フェナセン薄膜FETの開発と論理回路応用

    三上隆弘, 下侑馬, 浜尾志乃, 岡本秀毅, 郷田慎, 江口律子, 後藤秀徳, 林靖彦, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 二次元層状物質への電界効果キャリア注入と超伝導

    上杉英里, 後藤秀徳, 江口律子, 北川俊作, 小林達夫, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 新しい有機ならびに炭素系超伝導体の合成と特性評価

    寺尾貴博, 西山佐希, NGUYEN Huyen L. T., ZHENG Lu, MIAO Xiao, 後藤秀徳, 江口律子, 加賀山朋子, 清水克也, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 金属ドープLaOBiS2超伝導体の合成と特性評価

    西山佐希, 上杉英里, HUYEN Nguyen Thi Le, 加賀山朋子, 清水克哉, 後藤秀徳, 江口律子, 北川俊作, 小林達生, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • フェナセン単結晶FETの特性と論理回路応用

    下侑馬, 三上隆弘, 浜尾志乃, 岡本秀毅, 郷田慎, 江口律子, 後藤秀徳, 林靖彦, 久保園芳博

    日本化学会中国四国支部大会講演要旨集   2015   2015

  • 多環フェナセン単結晶電界効果トランジスタの伝導特性と論理回路応用

    下侑馬, 三上隆弘, 浜尾志乃, 江口律子, 後藤秀徳, 岡本秀毅, 郷田慎, 佐藤かおり, 久保園芳博, 林靖彦

    応用物理・物理系学会中国四国支部合同学術講演会講演予稿集   2015   2015

  • フェナセン単結晶を用いた高性能電界効果トランジスタの作製及びその伝導特性

    下侑馬, 三上隆弘, 村上寛虎, 浜尾志乃, 江口律子, 後藤秀徳, 岡本秀毅, 郷田慎, 佐藤かおり, 林靖彦, 久保園芳博

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   76th   2015

  • フェナセン系薄膜電界効果トランジスタの伝導特性評価と論理回路応用

    三上隆弘, 下侑馬, 浜尾志乃, 江口律子, 後藤秀徳, 岡本秀毅, 林靖彦, 久保園芳博

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   76th   2015

  • MxLnOBiS2(M:金属原子,Ln:ランタノイド原子)超伝導体の合成

    西山佐希, 上杉英里, 後藤秀徳, 江口律子, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   70 ( 2 )   2015

  • 静電的にキャリアドープした二次元層状無機化合物(BiS2系,カルコゲナイド系)の電気伝導特性

    上杉英里, MIAO Xiao, 西山佐希, 江口律子, 後藤秀徳, 久保園芳博

    日本物理学会講演概要集(CD-ROM)   70 ( 2 )   2015

  • フェナセン系薄膜電界効果トランジスタのデバイス構造の改変による伝導特性制御と論理回路応用

    三上隆弘, 下侑馬, 浜尾志乃, 江口律子, 後藤秀徳, 岡本秀毅, 久保園芳博, 林靖彦

    応用物理・物理系学会中国四国支部合同学術講演会講演予稿集   2015   2015

  • 22pCJ-6 Local structure of organic electronics and novel superconductors

    Kubozono Yoshihiro, Goto Hideniri, Eguchi Ritsuko

    Meeting Abstracts of the Physical Society of Japan   70 ( 1 )   2751 - 2752   2015

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    DOI: 10.11316/jpsgaiyo.70.1.0_2751

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  • 21aAC-7 Carrier scattering in graphene by adsorbed molecules

    Akiyoshi Hidehiko, Goto Hidenori, Uesugi Eri, Hamao Shino, Eguchi Ritsuko, Yoshida Yukihiro, Saito Gunzi, Kubozono Yoshihiro

    Meeting Abstracts of the Physical Society of Japan   70 ( 1 )   1246 - 1246   2015

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    DOI: 10.11316/jpsgaiyo.70.1.0_1246

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  • 18aCE-8 Theory of magnetic circular dichroism in Fe 2p core-level hard x-ray photoelectron spectroscopy for Fe_3O_4

    Taguchi, Chainani A, Ueda S, Matsunami M, Ishida Y, Eguchi R, Tsuda S, Yabashi M, Tamasaku K, Nishino Y, Ishikawa T, Daimon H, Todo S, Tanaka H, Oura M, Senba Y, Ohashi H, Shin S

    Meeting Abstracts of the Physical Society of Japan   70 ( 0 )   2015

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  • 10aBH-12 Carrier doping to two- and three-dimensional Bi compounds

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Noji Takashi, Koike Yoji, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   455 - 455   2014.8

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  • 8aAH-1 Electronic properties of graphenes doped with electron acceptor/donor molecules II

    Akiyoshi Hidehiko, Goto Hidenori, Uesugi Eri, Hamao Shino, Eguchi Ritsuko, Kubozono Yoshihiro, Yoshida Yukihiro, Saito Gunzi

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   600 - 600   2014.8

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  • 27aCG-10 Field-effect control of electronic properties in inorganic and organic layered-materials

    Uesugi E., Senda M., Teranishi K., Eguchi R., Goto H., Noji T, Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   548 - 548   2014.3

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  • 27pCL-5 Electronic properties of graphene doped by electron acceptor/donor molecules

    Akiyoshi Hidehiko, Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   835 - 835   2014.3

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  • 27pCE-2 Metal doped FeSe_<1-x>Te_x(x = 0.2, 0.5, 0.7) Superconductors Prepared Using Liquid NH_3 Technique

    Sakai Yusuke, Izumi Masanari, Lu Zheng, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   561 - 561   2014.3

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  • 27pCE-3 Superconductivity in ammoniated metal-intercalated two-dimensional layered materials

    Zheng Lu, Sakai Yusuke, Izumi Masanari, Eguchi Ritsuko, Goto Hidenori, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   561 - 561   2014.3

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  • アンモニア溶媒を用いて金属ドーピングされたFeSe1-xTexの超伝導の圧力依存性

    和泉正成, 酒井優介, ZHENG Lu, 後藤秀徳, 江口律子, 坂田雅文, 小林達生, 荒木新吾, 恩地太紀, 藤原明比古, KIM Jungeun, SUN Liling, 久保園芳博

    日本物理学会講演概要集   69 ( 1 )   2014

  • 有機太陽電池におけるn型有機半導体分子の電子構造

    中西利栄, 野木村あゆ美, 江口律子, 金井要

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   2014

  • Electoric field control of electronic properties in few-layer graphene

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   614 - 614   2013.8

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  • Temperature dependence of conduction property in FeSe_<0.1>Te_<0.9> with field-effect carrier doping

    Senda M., Eguchi R., Goto H., Noji N., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   474 - 474   2013.8

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  • 26pDF-8 Characteristics of phenacene electric-double-layer field-effect transistors using various type ionic liquids

    He Xuexia, Eguchi Ritsuko, Hamao Shino, Goto Hidenori, Kambe Takashi, Yoshida Yukihiro, Saito Gunzi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   758 - 758   2013.8

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  • Temperature dependence of conduction property in FeSe_<0.1>Te_<0.9> with field-effect carrier doping

    Senda M., Eguchi R., Goto H., Noji T., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   746 - 746   2013.8

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  • 28aEC-7 Superconductivity in ammoniated/metal doped FeSe systems

    Zheng Lu, Izumi Masanari, Sakai Yusuke, Eguchi Ritsuko, Goto Hidenori, Takabayashi Yasuhiro, Kambe Takashi, Onji Taiki, Araki Shingo, Kobayashi C.Tasuo, Kim Jungeun, Fujiwara Akihiko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   587 - 587   2013.8

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  • Metal doping into FeSe_<1-x>Te_x(x=0.2,0.5,0.7) crystals using liquid ammonia technique and their physical properties

    Sakai Y., Izumi M., Lu Zheng, Goto H., Eguchi R., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   587 - 587   2013.8

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  • 26pXZE-8 Conductance control of FeSe_<1-x>Te_x single crystal devices

    Senda M., Eguchi R., Goto H., Kambe T., Noji T., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   919 - 919   2013.3

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  • 26pXZE-8 Conductance control of FeSe_<1-x>Te_x single crystal devices

    Senda M., Eguchi R., Goto H., Kambe T., Noji T., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   594 - 594   2013.3

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  • 26pXF-4 Syntheses of aromatic superconductors using liquid ammonia

    Teranishi K., He X., Zheng L., Izumi M., Sakai Y., Takabayashi Y., Eguchi R., Goto H., Kambe T., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   907 - 907   2013.3

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  • 28pXP-5 Study on band structure of few-layer graphene by capacitance measurement

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Fujiwara Akihiko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   771 - 771   2013.3

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  • 27pXP-7 N-channel characteristics and temperature dependence of transport properties in phenacene field-effect transistors

    He Xuexia, Hamao Shino, Eguchi Ritsuko, Goto Hidenori, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   942 - 942   2013.3

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  • YbTGe(T=Cu,Ag,Ir,Pt)の硬X線光電子分光

    松波雅治, 松波雅治, 松波雅治, CHAINANI A, 田口宗孝, 江口律子, 江口律子, 大浦正樹, 辛埴, 辛埴, 木村真一, 木村真一, 加藤健一, 玉作賢治, 香村芳樹, 伊藤基巳紀, 田中義人, 石川哲也

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   26th   76   2013.1

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  • FeSe1-xTex単結晶デバイスの伝導特性制御

    千田恵美, 江口律子, 後藤秀徳, 神戸高志, 野地尚, 小池洋二, 久保園芳博

    日本物理学会講演概要集   68 ( 1 )   2013

  • PC70BM薄膜の電子構造と表面の膜形態

    野木村あゆ美, 赤池幸紀, 中西利栄, 江口律子, 金井要

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   74th   2013

  • 有機多環縮合炭化水素のエレクトロニクス応用と超伝導

    久保園芳博, 江口律子, 後藤秀徳, 神戸高志

    分子科学討論会講演プログラム&要旨(Web)   7th   2013

  • アンモニア溶媒を用いて金属ドーピングされたFeSe1-xTex超伝導体の圧力依存性

    和泉正成, 酒井優介, LU Zheng, 後藤秀徳, 江口律子, 坂田雅文, 小林達生, 荒木新吾, 恩地太紀, SUN Liling, 久保園芳博

    日本物理学会講演概要集   68 ( 2 )   2013

  • 電界効果キャリアドーピングしたFeSe0.1Te0.9の伝導特性の高温依存性

    千田恵美, 江口律子, 後藤秀徳, 野地尚, 小池洋二, 久保園芳博

    日本物理学会講演概要集   68 ( 2 )   2013

  • 27aPS-47 HAXPES for YbTGe (T=Cu,Ag,Ir,Pt)

    Matsunami M, Kohmura Y, Ito K, Tanaka Y, Ishikawa T, Chainani A, Taguchi M, Eguchi R, Oura M, Shin S, Kimura S, Katoh K, Tamasaku K

    Meeting Abstracts of the Physical Society of Japan   68 ( 0 )   2013

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  • 21pEC-6 Quantum capacitance of few-layer graphene

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Fujiwara Akihiko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   808 - 808   2012.8

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  • 21pFE-7 Synthesis of aromatic hydrocarbon superconductors II

    Teranishi Kazuya, He Xuexia, Izumi Masanari, Sakai Yusuke, Eguchi Ritsuko, Goto Hidenori, Kambe Takashi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   603 - 603   2012.8

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  • 18aFH-5 Single crystal FETs using phenacene type aromatic hydrocarbon molecules

    He Xuexia, Teranishi Kazuya, Hamao Shino, Eguchi Ritsuko, Goto Hidenori, Kambe Takashi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   752 - 752   2012.8

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  • 21pGA-8 Surface electronic states and control of conduction characteristics in FeSe_<1-x>Te_x thin crystal

    Eguchi R., Senda M., Goto H., Kambe T., Fujiwara A., Noji T., Koike Y., Horiba K., Nagamura N., Oshima M., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   607 - 607   2012.8

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  • 21pGA-7 Appearance of superconductivity with suppression of the structural transition in ultra-thin FeSe_<1-x>Te_x(x=0.9, 0.95) single crystals

    Senda M., Eguchi R., Goto H., Kambe T., Noji T., Koike Y., Kubozono Y.

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   607 - 607   2012.8

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  • 21pEC-7 Edge-dependent transport properties in graphene

    Goto Hidenori, Uesugi Eri, Eguchi Ritsuko, Fujiwara Akihiko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   808 - 808   2012.8

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  • 25pYF-11 Synthesis of aromatic hydrocarbon superconductors

    Mitamura Hiroki, He Xuexia, Takahashi Yousuke, Eguchi Ritsuko, Goto Hidenori, Kambe Takashi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   906 - 906   2012.3

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  • 25pYF-8 Transport Properties of Phenacene Field-Effect Transistors

    Kubozono Yoshihiro, Komura Noriko, Kaji Yumiko, Kawai Nobuaki, Hamao Shino, Eguchi Ritsuko, Akaike Kouki, Goto Hidenori, Sugawara Takayuki

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   905 - 905   2012.3

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  • 27aSB-5 Transport properties of graphene edges

    Goto Hidenori, Uesugi Eri, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   926 - 926   2012.3

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  • 25pYF-11 Synthesis of aromatic hydrocarbon superconductors

    Mitamura Hiroki, He Xuexia, Takahashi Yousuke, Eguchi Ritsuko, Goto Hidenori, Kambe Takashi, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   645 - 645   2012.3

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  • 25pYF-8 Transport Properties of Phenacene Field-Effect Transistors

    Kubozono Yoshihiro, Komura Noriko, Kaji Yumiko, Kawai Nobuaki, Hamao Shino, Eguchi Ritsuko, Akaike Kouki, Goto Hidenori, Sugawara Takayuki

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   644 - 644   2012.3

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  • 24aSB-11 Transport properties in ionic liquid-gated few layer graphene FETe

    Uesugi Eri, Goto Hidenori, Eguchi Ritsuko, Kubozono Yoshihiro

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   721 - 721   2012.3

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  • FeSe1-xTex極薄単結晶デバイスの表面電子状態と伝導特性制御

    江口律子, 千田恵美, 後藤秀徳, 神戸高志, 藤原明比古, 野地尚, 小池洋二, 堀場弘司, 堀場弘司, 永村直佳, 永村直佳, 尾嶋正治, 尾嶋正治, 久保園芳博

    日本物理学会講演概要集   67 ( 2 )   2012

  • Field-effect Carrier Doping to Organic Molecular Crystals

    久保園芳博, 加地由美子, 小川景子, 菅原保幸, 江口律子, 赤池幸紀, 神戸高志, 藤原明比古

    表面科学   32 ( 1 )   27 - 32   2011.1

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  • 軟X線・硬X線光電子分光によるFeGeの電子状態の研究

    稲葉豪志, 大槻匠, CHAINANI A, 田口宗孝, 松波雅治, 江口律子, 高田恭孝, 中村元彦, 西野吉則, 玉作賢治, 矢橋牧名, 石川哲也, 大浦正樹, 大橋治彦, 仙波泰徳, 金澤直也, 小野瀬佳文, 十倉好紀, 辛埴

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   24th   86   2011.1

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  • Sm0.45Sr0.55MnO3の内殻及び共鳴光電子分光

    小島太郎, 高田恭孝, CHAINANI A, 大槻匠, 松波雅治, 江口律子, 稲葉豪志, 大浦正樹, 辛埴, 西野吉則, 玉作賢治, 矢橋牧名, 仙波泰徳, 大橋治彦, 石川哲也, 富岡泰秀, 十倉好紀

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   24th   89   2011.1

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  • 有機芳香族単結晶を用いたFETの基本特性と物性制御

    河相暢幸, 小川景子, 加地由美子, 江口律子, 赤池幸紀, 後藤秀徳, 久保園芳博

    日本物理学会講演概要集   66 ( 2 )   2011

  • イオン液体を用いる電気二重層トランジスタと電気化学トランジスタ

    久保園芳博, 加地由美子, 江口律子, 後藤秀徳, 藤原明比古

    日本物理学会講演概要集   66 ( 2 )   2011

  • 光電子分光・X線吸収分光法によるLaCoO3薄膜の研究

    大槻匠, CHAINANI A., 江口律子, 江口律子, 松波雅治, 松波雅治, 大浦正樹, 仙波泰徳, 大橋治彦, 辛埴, 辛埴

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   24th   2011

  • 炭化水素超伝導体の構造・物性

    久保園芳博, 神戸高志, 江口律子, 藤原明比古

    PFシンポジウム要旨集   28th   2011

  • PrTi2Al20のPr3d-4f共鳴光電子分光

    松波雅治, 松波雅治, 田口宗孝, CHAINANI A., 江口律子, 江口律子, 大浦正樹, 酒井明人, 中辻知, 辛埴, 辛埴

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   24th   2011

  • 高誘電固体絶縁膜を用いた有機芳香族FETの基本特性

    小川景子, 菅原保幸, 及川昌平, 加地由美子, 江口律子, 野内亮, 谷垣勝己, 久保園芳博

    日本物理学会講演概要集   66 ( 1 )   2011

  • Picene単結晶を用いた有機PETの基本特性と物性制御

    河相暢幸, 小川景子, 加地由美子, 江口律子, 久保園芳博

    日本物理学会講演概要集   66 ( 1 )   2011

  • 22aGC-13 Quantum Critical Phenomena Induced by Fe doping in the Valence Fluctuating Heavy Fermion System α-YbAlB_4

    Kuga K, O'Farrell E. C. T, Matsumoto Y, Nakatsuji S, Okawa M, Takata Y, Matsunami M, Eguchi R, Taguchi M, Chainani Ashish, Shin S, Nishino Y, Tamasaku K, Yabashi M, Ishikawa T, Kiuchi Y

    Meeting Abstracts of the Physical Society of Japan   66 ( 0 )   2011

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  • 26aEC-4 Magnetism and Valence Change Induced by Fe doping in the Valence Fluctuating Heavy Fermion System α-YbAlB_4

    Kuga K, Matsumoto Y, Nakatsuji S, Okawa M, Takata Y, Matsunami M, Eguchi R, Taguchi M, Chainani Ashish, Shin S, Nishino Y, Tamasaku K, Yabashi M, Ishikawa T, Kiuchi Y

    Meeting Abstracts of the Physical Society of Japan   66 ( 0 )   2011

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  • YbGa1.15Si0.85及びYbGaxGe2-xの共鳴X線発光分光・光電子分光測定

    山岡人志, JARRIGE Ignace, 辻井直人, 今井基晴, LIN Jung-Fu, 松波雅治, 江口律子, 有田将司, 島田賢也, 生天目博文, 谷口雅樹, 田口宗孝, 仙波泰徳, 大橋治彦, 平岡望, 石井啓文, TSUEI Ku-Ding

    日本物理学会講演概要集   66 ( 1 )   2011

  • Sm0.45Sr0.55MnO3の硬X線・軟X線光電子分光

    小島大郎, 小島大郎, 高田恭孝, CHAINANI A, 大槻匠, 松波雅治, 江口律子, 稲葉豪志, 大浦正樹, SHIN S, 西野吉則, 玉作賢治, 矢橋牧名, 仙波泰徳, 大橋治彦, 石川哲也, 富岡泰秀, 十倉好紀

    日本物理学会講演概要集   65 ( 2 )   691   2010.8

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  • 2次元三角格子Ag2NiO2,Ag2MnO2の共鳴光電子分光

    EGUCHI RITSUKO, YOSHIDA HIROYUKI, OKAMOTO YOSHIHIKO, CHAINANI ASHISH, MATSUNAMI MASAHARU, ISHIDA YUKIAKI, OURA MASAKI, SEMBA YASUNORI, OHASHI HARUHIKO, SHIN SHIGI, HIROI ZENJI

    日本物理学会講演概要集   65 ( 1 )   801   2010.3

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  • 二次元拡張系芳香族分子に対するEDLキャパシタによる電界効果ドーピングと化学ドーピング

    中田秀平, 加地由美子, 久保園芳博, 赤池幸紀, 江口律子

    日本物理学会講演概要集   65 ( 2 )   2010

  • PrTi2Al20の光電子分光

    松波雅治, 松波雅治, 田口宗孝, CHAINANI A., 江口律子, 大浦正樹, 仙波泰徳, 大橋治彦, 酒井明人, 中辻知, 辛埴, 辛埴

    日本物理学会講演概要集   65 ( 1 )   2010

  • 光電子分光によるLaCoO3薄膜の研究

    大槻匠, CHAINANI A., 江口律子, 江口律子, 松波雅治, 松波雅治, 大浦正樹, 仙波泰徳, 大橋治彦, 長谷川哲也, 長谷川哲也, SHIN S., SHIN S.

    日本物理学会講演概要集   65 ( 2 )   2010

  • NiGa2S4,Ni0.8Al2.2S4の電子状態

    脇坂祐輝, 須田山貴亮, 溝川貴司, 肥後友也, 南部雄亮, 中辻知, WADATI H., SAWATZKY G. A., HAWTHRON D. G., REGIER T. Z., 江口律子, 江口律子, 松波雅治, 松波雅治, 大槻匠, 田口宗孝, 高田恭孝, 高田恭孝, 大浦正樹, 仙波泰徳, 大橋治彦, SHIN S., SHIN S.

    日本物理学会講演概要集   65 ( 2 )   2010

  • ゲート電極によるEDLキャパシタ・有機FETの特性制御

    加地由美子, 小川景子, 赤池幸紀, 江口律子, 神戸高志, 久保園芳博

    日本物理学会講演概要集   65 ( 2 )   2010

  • 硬X線光電子分光によるFe3O4の電子状態研究

    田口宗孝, CHAINANI A., 松波雅治, 江口律子, 石田行章, 高田恭孝, 矢橋牧名, 玉作賢治, 西野吉則, 石川哲也, 東堂栄, SHIN S., SHIN S.

    日本物理学会講演概要集   65 ( 1 )   2010

  • EDLキャパシタ有機芳香族薄膜・単結晶FETの温度依存性

    小川景子, 加地由美子, 江口律子, 藤原明比古, 久保園芳博

    日本物理学会講演概要集   65 ( 2 )   2010

  • 新規有機物質の正・逆光電子分光による電子状態の観測

    江口律子, 赤池幸紀, 加地由美子, 石田行章, 小泉健二, SHIN S., 金井要, 藤原明比古, 神戸高志, 久保園芳博

    日本物理学会講演概要集   65 ( 2 )   2010

  • 21aHK-3 Electronic Structure of Fe_3O_4 Studied by Hard X-ray Photoemission Spectroscopy

    Taguchi M, Chainani A, Matsunami M, Eguchi R, Ishida Y, Takata Y, Yabashi M, Tamasaku K, Nishino Y, Ishikawa T, Todo S, Shin S

    Meeting Abstracts of the Physical Society of Japan   65 ( 0 )   2010

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  • 24aRC-10 Hard and Soft X-ray Photoemission Spectroscopy of Sm_<0.45>Sr_<0.55>MnO_3

    Kojima T, Takata Y, Chainani A, Ohtsuki T, Matsunami M, Eguchi R, Inaba G, Oura M, Shin S, Nishino Y, Tamasaku K, Yabashi M, Senba Y, Ohashi H, Ishikawa T, Tomioka Y, Tokura Y

    Meeting Abstracts of the Physical Society of Japan   65 ( 0 )   2010

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  • 24aRC-7 Soft and Hard X-Ray Photoelectron Spectroscopy of FeGe

    Inaba G, Ohtsuki T, Chainani A, Matsunami M, Eguchi R, Takata Y, Nakamura M, Nishino Y, Tamasaku K, Yabashi M, Ishikawa T, Oura M, Ohashi H, Senba Y, Kanazawa N, Onose Y, Tokura Y, Shin S

    Meeting Abstracts of the Physical Society of Japan   65 ( 0 )   2010

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  • Yb化合物の光電子・光学スペクトルにおけるエネルギー損失

    松波雅治, CHAINANI A, 田口宗孝, 江口律子, 高田恭孝, 岡村英一, 難波孝夫, 矢橋牧名, 玉作賢治, 西野吉則, 石川哲也, 仙波泰徳, 大橋治彦, 小檜山卓也, 小坂昌史, 海老原孝雄, 辛埴

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   23rd   119   2009.12

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  • パイロクロア酸化物の硬X線・軟X線光電子分光

    江口律子, CHAINANI Ashish, 松波雅治, 高田恭孝, 大槻匠, 大浦正樹, 仙波泰徳, 大橋治彦, 辛埴, 矢橋牧名, 西野吉則, 玉作賢治, 石川哲也, 山浦淳一, 広井善二

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   23rd   119   2009.12

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  • ペロブスカイト型Ni酸化物薄膜のin-situ光電子分光

    江口律子, 江口律子, CHAINANI Ashish, 松波雅治, 松波雅治, 田口宗孝, 石田行章, 仙波泰徳, 大橋治彦, 岡本佳比古, 廣井善二, 辛埴, 辛埴

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   22nd   2009

  • SPring-8 BL17SUにおける3次元軟X線角度分解光電子分光

    江口律子

    KEK Proceedings   ( 2008-18 )   2009

  • 共鳴光電子分光による希薄磁性半導体Co:TiO2の研究

    大槻匠, CHAINANI A., 江口律子, 江口律子, 松波雅治, 松波雅治, 大浦正樹, 仙波泰徳, 大橋治彦, 長谷川哲也, 長谷川哲也, 辛埴, 辛埴

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   23rd   2009

  • 27pRK-2 Photoemission study of pyrochlore oxides Cd_2Os_2o_7 and Cd_2Re_2O_7

    Eguchi R, Chainani Ashish, Matsunami M, Takata Y, Ohtsuki T, Oura M, Senba Y, Ohashi H, Shin S, Yabashi M, Nishino Y, Tamasaku K, Ishikawa T, Yamaura J, Hiroi Z

    Meeting Abstracts of the Physical Society of Japan   64 ( 0 )   2009

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  • 28aRL-5 Fe-substitution dependence of Yb valence in heavy fermion Yb(Al, Fe)B_4

    Okawa M, Matsunami M, Ishizaka K, Eguchi R, Taguchi M, Chainani Ashish, Takata Y, Yabashi M, Tamasaku K, Nishino Y, Ishikawa T, Kuga K, Horie N, Nakatsuji S, Shin S

    Meeting Abstracts of the Physical Society of Japan   64 ( 0 )   2009

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  • 26pXA-2 Hard X-ray Photoemission Spectroscopy of Co:TiO_2/LaTiO_3 Bilayers

    Ohtsuki T, Chainani A, Takata Y, Matsunami M, Eguchi R, Nishino Y, Tamasaku K, Yabashi M, Ishikawa T, Hasegawa T, Shin S

    Meeting Abstracts of the Physical Society of Japan   64 ( 0 )   2009

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  • 27aPS-10 Hard X-ray photoelectron spectroscopy of doped Silicon

    Chainani A

    Meeting Abstracts of the Physical Society of Japan   64 ( 0 )   2009

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  • 30aTD-5 Photoemission spectroscopy of heavy-fermion system YbAlB_4 : Electronic structure and valence estimation

    Okawa M, Matsunami M, Ishizaka K, Eguchi R, Taguchi M, Chainani Ashish, Takata Y, Yabashi M, Tamasaku K, Nishino Y, Ishikawa T, Kuga K, Horie N, Nakatsuji S, Shin S

    Meeting Abstracts of the Physical Society of Japan   64 ( 0 )   2009

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  • 30aVA-5 Hard & Soft X-Ray Photoemission Spectroscopy of YbAl_2

    Matsunami M, Chainani A, Eguchi R, Taguchi M, Takata Y, Okamura H, Nanba T, Yabashi M, Tamasaku K, Nishino Y, Ishikawa T, Senba Y, Ohashi H, Tsujii N, Kobiyama T, Kosaka M, Shin S

    Meeting Abstracts of the Physical Society of Japan   64 ( 0 )   2009

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  • YbAl2の硬X線・軟X線光電子分光

    松波雅治, 松波雅治, CHAINANI A., 江口律子, 田口宗孝, 高田恭孝, 岡村英一, 難波孝夫, 矢橋牧名, 矢橋牧名, 玉作賢治, 西野吉則, 石川哲也, 石川哲也, 仙波泰徳, 大橋治彦, 辻井直人, 小檜山卓也, 小坂昌史, SHIN S., SHIN S.

    日本物理学会講演概要集   64 ( 1 )   2009

  • Hard X‐ray Photoelectron Spectroscopy of Hg&lt;sub&gt;2&lt;/sub&gt;Ru&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;7&lt;/sub&gt; and Tl&lt;sub&gt;2&lt;/sub&gt;Ru&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;7&lt;/sub&gt;

    CHAINANI A, YAMAMOTO Ayako, MATSUNAMI Masaharu, EGUCHI Ritsuko, TAGUCHI Munetaka, TAKATA Yasutaka, YABASHI Makina, NISHINO Yoshinori, TAMASAKU Kenji, ISHIKAWA Tetsuya, TAKAGI Hidenori, SHIN Shik

    日本物理学会講演概要集   63 ( 2 )   478   2008.8

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  • Ag2MnO2における電子比熱係数γの磁場依存性

    YOSHIDA HIROYUKI, EGUCHI RITSUKO, SHIN SHOKU, OKAMOTO YOSHIHIKO, YAMAURA JUN'ICHI, HIROI ZENJI

    日本物理学会講演概要集   63 ( 2 )   461   2008.8

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  • Yb2+の系におけるX線・軟X線光電子分光

    松波雅治, 田口宗孝, 江口律子, 石田行章, CHAINANI A, 高田恭孝, 矢橋牧名, 玉作賢治, 西野吉則, 石川哲也, 仙波泰徳, 大橋治彦, 岡村英一, 難波孝夫, 辻井直人, 落合明, 辛埴

    日本物理学会講演概要集   63 ( 2 )   512   2008.8

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  • Yb2+の系における硬X線光電子分光

    松波雅治, 田口宗孝, 江口律子, 石田行章, CHAINANI A, 高田恭孝, 矢橋牧名, 玉作賢治, 西野吉則, 石川哲也, 岡村英一, 難波孝夫, 落合明, SHIN S

    日本物理学会講演概要集   63 ( 1 )   724   2008.2

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  • TiO2(001)上に堆積させたVO2薄膜の電子状態の研究

    佐伯邦成, 村岡祐治, 村岡祐治, 脇田高徳, 平井正明, 横谷尚睦, 横谷尚睦, 江口律子, 辛埴, 仙波泰徳, 大橋治彦, 島田賢也

    日本物理学会講演概要集   63 ( 2 )   2008

  • α-TDAE-C60単結晶の軟X線光電子分光

    山岡人志, 神戸高志, 佐藤徹, 石田行章, 松波雅治, 松波雅治, 馬場輝久, 江口律子, 江口律子, 仙波泰徳, 大橋治彦

    日本物理学会講演概要集   63 ( 2 )   2008

  • 鉄珪化物超伝導体Lu2Fe3Si5のバルク光電子分光

    馬場輝久, 松波雅治, 江口律子, 石田行章, CHAINANI A., 大川万里生, 石坂香子, 木須孝幸, 下志万貴博, 笹目大樹, 渡辺忠孝, 高野良紀, 仙波泰徳, 大橋治彦, 富樫格, 渡部俊太郎, WANG X.-Y., CHEN C. T., SHIN S., SHIN S.

    日本物理学会講演概要集   63 ( 1 )   2008

  • NdNiO3薄膜のin-situ軟X線光電子分光

    江口律子, 江口律子, CHAINANI Ashish, 松波雅治, 松波雅治, 石田行章, 仙波泰徳, 大橋治彦, 岡本佳比古, 廣井善二, SHIN S., SHIN S.

    日本物理学会講演概要集   63 ( 2 )   2008

  • 反強磁性ホウ素炭化物超伝導体ErNi2B2Cの共鳴光電子分光

    馬場輝久, 馬場輝久, 江口律子, 松波雅治, 田口宗孝, CHAINANI A., 竹屋浩幸, 平田和人, 仙波泰徳, 大橋治彦, 辛埴, 辛埴

    日本物理学会講演概要集   63 ( 2 )   2008

  • VO2薄膜の角度分解光電子分光

    佐伯邦成, 村岡祐治, 村岡祐治, 脇田高穂, 平井正明, 横谷尚睦, 横谷尚睦, 江口律子, 辛埴

    日本物理学会講演概要集   63 ( 1 )   2008

  • VO2/TiO2(001)における界面反応

    佐伯邦成, 村岡祐治, 村岡祐治, 脇田高徳, 平井正明, 横谷尚睦, 横谷尚睦, 江口律子, 辛埴, 仙波泰徳, 大橋治彦, 島田賢也

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部支部学術講演会講演予稿集   2008   2008

  • VO2/TiO2界面の電子状態

    村岡祐治, 村岡祐治, 佐伯邦成, 江口律子, 辛埴, 横谷尚睦, 横谷尚睦, 仙波泰徳, 大橋治彦

    応用物理学関係連合講演会講演予稿集   55th ( 2 )   2008

  • 24pYH-9 Hard X-Ray Photoemission Spectroscopy of Yb^<2+> Systems

    Matsunami M, Taguchi M, Eguchi R, Ishida Y, Chainani A, Takata Y, Yabashi M, Tamasaku K, Nishino Y, Ishikawa T, Okamura H, Nanba T, Ochiai A, Shin S

    Meeting Abstracts of the Physical Society of Japan   63 ( 0 )   2008

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  • 20pPSB-35 Hard X-ray Photoelectron Spectroscopy of Hg_2Ru_2O_7 and Tl_2Ru_2O_7

    Chainani A, Yamamoto A, Matsunami M, Eguchi R, Taguchi M, Takata Y, Yabashi M, Nishino Y, Tamasaku K, Ishikawa T, Takagi H, Shin S

    Meeting Abstracts of the Physical Society of Japan   63 ( 0 )   2008

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  • 21aPS-83 Hard & Soft X-Ray Photoemission Spectroscopy of Yb^<2+> Systems

    Matsunami M, Taguchi M, Eguchi R, Ishida Y, Chainani A, Takata Y, Yabashi M, Tamasaku K, Nishino Y, Ishikawa T, Senba Y, Ohashi H, Okamura H, Nanba T, Tsujii N, Ochiai A, Shin S

    Meeting Abstracts of the Physical Society of Japan   63 ( 0 )   2008

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  • FeGa3におけるエネルギーギャップの観測

    辻井直人, 古林孝夫, 山岡人志, 松波雅治, 松波雅治, 江口律子, 江口律子, 石田行章, 仙波泰徳, 大橋治彦, SHIN S., SHIN S., 阿部英樹, 北澤英明

    日本物理学会講演概要集   63 ( 1 )   2008

  • YbSの硬X線光電子分光

    松波雅治, 田口宗孝, 江口律子, 石田行章, CHAINANI A, 高田恭孝, 矢橋牧名, 玉作賢治, 西野吉則, 石川哲也, 岡村英一, 難波孝夫, 落合明, 辛埴

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   21st   100   2007.12

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  • In situ photoemission study of LaNiO3 thin films grown by pulsed laser deposition

    K. Horiba, R. Eguchi, M. Taguchi, A. Chainani, A. Kikkawa, Y. Senba, H. Ohashi, S. Shin

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA   156   XL - XLI   2007.5

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  • VO2極薄膜の電子状態

    佐伯邦成, 村岡祐治, 脇田高徳, 平井正明, 横谷尚睦, 江口律子, 辛埴, 仙波泰徳, 大橋治彦

    応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部支部学術講演会講演予稿集   2007   2007

  • LaNiO3薄膜の軟X線角度分解光電子分光

    江口律子, 堀場弘司, 田口宗孝, 松波雅治, 石田行章, CHAINANI Ashish, 吉川明子, 仙波泰徳, 大橋治彦, SHIN S., SHIN S.

    日本物理学会講演概要集   62 ( 2 )   2007

  • TiO2(001)基板上に作製したVO2薄膜における金属-絶縁体転移の膜厚依存性

    佐伯邦成, 村岡祐治, 脇田高徳, 平井正明, 横谷尚陸, 江口律子, 辛埴, 仙波素徳, 大橋治彦

    日本物理学会講演概要集   62 ( 2 )   2007

  • SrTiO3:Nb薄膜の軟x線共鳴光電子分光

    石田行章, 江口律子, 松波雅治, 堀場弘司, 田口宗孝, CHAINANI Ashish, 仙波泰徳, 大橋治彦, 太田裕道, SHIN S., SHIN S.

    応用物理学関係連合講演会講演予稿集   54th ( 1 )   2007

  • 形状記憶合金TiNi-2Feの光電子分光による電子状態の研究

    馬場輝久, 横谷尚睦, CHAINANI A., 松波雅治, 江口律子, 仙波泰徳, 大橋治彦, 木須孝幸, 下志万貴博, 石坂香子, 富樫格, WANG X.-Y., CHEN C. T., 渡部俊太郎, 福田隆, 掛下知行, 辛埴, 辛埴

    日本物理学会講演概要集   62 ( 2 )   2007

  • 強相関熱電材料Sr1-xRh2O4の軟x線光電子分光

    石田行章, 江口律子, 松波雅治, 堀場弘司, 田口宗孝, CHAINANI Ashish, 仙波泰徳, 大橋治彦, 岡本佳比古, 高木英典, 高木英典, SHIN S., SHIN S.

    日本物理学会講演概要集   62 ( 2 )   2007

  • FeSi1-xGexのX線分光(II):共鳴光電子分光測定

    山岡人志, 松波雅治, 松波雅治, 江口律子, 江口律子, 石田行章, 辻井直人, 仙波泰徳, 大橋治彦, SHIN S.

    日本物理学会講演概要集   62 ( 2 )   2007

  • 共鳴軟X線発光分光による混合原子価Ti酸化物薄膜における価数変化の直接観測

    堀場弘司, 江口律子, 竹内智之, 徳島高, 原田慈久, 大沢仁志, 仙波泰徳, 大橋治彦, 郡司遼佑, 大友明, 大友明, 川添良幸, 川崎雅司, 川崎雅司, SHIN Shik, SHIN Shik

    応用物理学関係連合講演会講演予稿集   53rd ( 2 )   2006

  • 28aUE-7 Hard X-ray and soft X-ray photoemission study of vanadium oxides

    Eguchi R, Horiba K, Matsunami M, Yamamoto K, Taguchi M, Takata Y, Chainani A, Yabashi M, Miwa D, Nishino Y, Tamasaku K, Ishikawa T, Senba Y, Ohashi H, Inoue I.H, Shin S

    Meeting Abstracts of the Physical Society of Japan   61 ( 0 )   2006

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  • 27aRF-5 Electronic structure of the Magneli phase by using Hard X-ray Core-Level Photoemission Spectroscopy

    Taguchi M, Fujiwara K, Horiba K, Chainani A, Takata Y, Yabashi M, Tamasaku K, Nishino Y, Miwa D, Ishikawa T, Matsunami M, Yamamoto K, Eguchi R, Tsuda S, Nakamura Y, Takagi H, Shin S

    Meeting Abstracts of the Physical Society of Japan   61 ( 0 )   2006

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  • 23pZR-18 Hard x-ray photoemission study of VO_2 thin film

    Eguchi R, Taguchi M, Horiba K, Matsunami M, Yamamoto K, Ishida Y, Takata Y, Chainani A, Shin S, Muraoka Y, Hiroi Z, Yabashi M, Miwa D, Nishino Y, Tamasaku K, Ishikawa T, Senba Y, Ohashi H

    Meeting Abstracts of the Physical Society of Japan   61 ( 0 )   2006

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  • 25aPS-13 Hard X-Ray Photoemission Spectroscopy of Valence Fluctuation f-Electron Systems

    Matsunami M, Takata Y, Taguchi M, Horiba K, Yamamoto K, Eguchi R, Takeuchi T, Ishida Y, Chainani A, Yabashi M, Tamasaku K, Nishino Y, Miwa D, Ishikawa T, Kunii S, Tsujii N, Shin S

    Meeting Abstracts of the Physical Society of Japan   61 ( 0 )   2006

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  • 共鳴逆光電子分光によるバンド幅制御型Ca1-xSrxVO3の電子構造

    和久井充, 樋口透, 弓田基晴, 服部武志, 江口律子, 井上公, 辛埴, 辛埴, 塚本桓世

    応用物理学会学術講演会講演予稿集   66th ( 2 )   2005

  • レーザー励起光電子分光によるボロンドープ超伝導ダイヤモンド薄膜の研究

    石坂香子, 江口律子, 木須孝幸, 横谷尚睦, 富樫格, CHEN C. T., ZHANG C., 高野義彦, 竹之内智大

    応用物理学関係連合講演会講演予稿集   52nd ( 1 )   2005

  • 24pXP-9 V2p soft x-ray photoemission of CaVO_3 and SrVO_3

    Kamakura N, Inoue I. H, Shin S, Horiba K, Matsunami M, Yamamoto K, Eguchi R, Taguchi M, Chainani A, Ohashi H, Senba Y

    Meeting Abstracts of the Physical Society of Japan   60 ( 0 )   2005

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  • 25aWE-10 Low-energy photoemission study of SrVO_3 and CaVO_3

    Eguchi R, Chen C. T, Arita M, Shimada K, Namatame H, Taniguchi M, Kiss T, Shimojima T, Tsuda S, Shin S, Inoue H, Togashi T, Watanabe S, Zhang C

    Meeting Abstracts of the Physical Society of Japan   60 ( 0 )   2005

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  • 19pYD-4 Electron-phonon coupling in metallic boron-doped diamond

    Ishizaka K, Zhang C. Q, Takano Y, Nagao M, Sakaguchi I, Tachiki M, Hatano T, Takenouchi T, Koabayashi K, Umezawa H, Kawarada H, Eguchi R, Tsuda S, Kiss T, Yokoya T, Shin S, Togashi T, Watanabe S, Chen C. T

    Meeting Abstracts of the Physical Society of Japan   60 ( 0 )   2005

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  • 24aWA-7 Laser photoemission study of superconducting boron-doped diamond thin film

    Ishizaka K, Zhang C, Takano Y, Nagao M, Sakaguchi I, Tachiki M, Hatano, Takenouchi T, Koabayashi K, Umezawa H, Kawarada H, Eguchi R, Tsuda S, Kiss T, Yokoya T, Shin S, Togashi T, Watanabe S, Chen C.T

    Meeting Abstracts of the Physical Society of Japan   60 ( 0 )   2005

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  • 27aXQ-1 Hard X-ray photoemission of V oxides

    Kamakura N, Taniguchi M, Awaji A, Takeuchi A, Tamasaku K, Ishikawa T, Inoue IH, Ueda Y, Kobayashi K, Shin S, Taguchi M, Eguchi R, Yamamoto K, Horiba K, Chainani A, Takata Y, Ikenaga E, Namatame H

    Meeting Abstracts of the Physical Society of Japan   59 ( 0 )   2004

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  • 光電子分光,逆光電子分光によるLa-doped SrTiO3の電子構造

    馬場大輔, 樋口透, 江口律子, 十倉好紀, SHIN S, 塚本桓世

    応用物理学関係連合講演会講演予稿集   50th ( 1 )   2003

  • 共鳴逆光電子分光によるSrTiO3の非占有電子状態の観測

    樋口透, 金井要, 江口律子, SHIN S, 塚本桓世

    応用物理学関係連合講演会講演予稿集   50th ( 1 )   2003

  • Resonant inverse photoemission spectroscopy study of Ni (110) single crystal II

    Tezuka Y, Miyazaki Y, Nakajima D, Kanai K, Ishii H, Nozawa S, Eguchi R, Shin S

    Meeting Abstracts of the Physical Society of Japan   58 ( 0 )   2003

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  • High-resolution photoemission and soft X-ray absorption study of Na0.33V2O5

    Eguchi R., Tsuda S., Yokoya T., Kosuge A., Chainani A., Shin S., Yamauchi T., Ueda Y.

    Meeting abstracts of the Physical Society of Japan   57 ( 2 )   420 - 420   2002.8

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  • 26pXM-4 Photoemission spectroscopy of κ-(BEDT-TTF)_2Cu[N(CN)_2]Br

    Kisu T., Yokoya T., Tsuda S., Eguchi R., Haruna T., Kamakura N., Takata Y., Shin S., Miyagawa K., Kanoda K.

    Meeting abstracts of the Physical Society of Japan   57 ( 1 )   793 - 793   2002.3

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  • 27aYD-12 Resonant inverse photoemission spectroscopy study of Ni(110) single crystal

    Nakajima D, Tezuka Y, Kanai K, Ishii H, Nozawa S, Eguchi R, Shin S

    Meeting Abstracts of the Physical Society of Japan   57 ( 0 )   2002

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  • 25aXp-1 (Ga,Mn) As, (In,Mn) As, (Cd,Mn) Teの共鳴軟X線発光分光(25aXP 領域4,領域5合同磁性半導体,領域4(半導体,メゾスコピック系・局在分野))

    石渡 洋一, 勝本 信吾, 家 泰弘, C.Debnath, 相馬 出, 岡 泰夫, 竹内 智之, 江口 律子, 渡邊 正満, 原田 慈久, 金井 要, 辛 埴, 林 岳, 橋本 義昭

    日本物理学会講演概要集   57 ( 0 )   2002

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  • 「Photoemission study of Pyrochlore Superconductor Cd2Re2O7

    「The Physical Society of Japan」   2001

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  • Resonant soft x-ray emission spectra at Ce-3d absorption edge of Ce-metal

    Watanabe M, Harada Y, Ishii Y, Ishiwata Y, Eguchi R, Takeuchi T, Shin S

    Meeting Abstracts of the Physical Society of Japan   56 ( 0 )   2001

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  • 「High-resolution Photoemission Study of SrVO3 and CaVO3

    「The Physical Society of Japan」   2001

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  • Soft-x-ray emission spectroscopy of (Ga,Mn)As II

    Ishiwata Y, Watanabe M, Eguchi R, Takeuchi T, Harada Y, Hashimoto Y, Katsumoto S, Iye Y, Shin S

    Meeting Abstracts of the Physical Society of Japan   55 ( 0 )   2000

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  • Mn composition dependence of x-ray absorption and emission spectroscopy for (Ga,Mn)As

    Ishiwatari Y, Eguchi R, Harada Y, Shin S, Hashimoto Y, Katsumoto S, Iye Y, Takeuchi T, Watanabe M

    Meeting Abstracts of the Physical Society of Japan   55 ( 0 )   2000

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  • Soft x-ray emission study of NiS_<2-x>Se_x

    Ishii H, Harada Y, Ishiwata Y, Eguchi R, Watanabe M, Miyasaka S, Takagi H, Shin S

    Meeting Abstracts of the Physical Society of Japan   55 ( 0 )   2000

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  • Soft X-ray emission study on DNA at N1s absorption edge.

    Takeuchi T, Tsukamoto T, Harada Y, Ishiwata Y, Eguchi R, Shin S, Watanabe M, Hieda K

    Meeting Abstracts of the Physical Society of Japan   55 ( 0 )   2000

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  • 「Metal-Insulator Transition of V6O13 by Soft X-ray Raman scattering and Photoemission spectroscopy」

    「The Physical Society of Japan」   2000

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  • 「Angle-resolved Photoemission Study of V6O13

    「The Physical Society of Japan」   2000

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  • Soft X-ray emission study on DNA at N1s absorption edge II.

    Takeuchi T, Tsukamoto T, Ishiwata Y, Eguchi R, Hrada Y, Watanabe M, Shin S

    Meeting Abstracts of the Physical Society of Japan   55 ( 0 )   2000

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  • Polarized soft x-ray Raman scattering of 3d^0 compounds

    Harada Y, Watanabe M, Eguchi R, Ishikawa Y, Takeuchi T, Yagishita A, Shin S

    Meeting Abstracts of the Physical Society of Japan   55 ( 0 )   2000

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  • Resonant soft x-ray emission spectra at Ce-3d absorption edge of CeRh_3

    Watanabe M, Ishiwata Y, Eguchi R, Takeuchi T, Ishii Y, Harada Y, Shin S

    Meeting Abstracts of the Physical Society of Japan   55 ( 0 )   2000

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  • CaVO3,SrVO3の軟X線ラマン散乱と共鳴逆光電子分光

    江口律子, 渡辺正満, 原田慈久, GRUSH M M, CALLCOTT T A, PERERA R C C, EDERER D L, 十倉好紀, 辛埴

    日本物理学会講演概要集   54 ( 1 )   1999

  • Ce化合物の共鳴軟X線発光分光

    渡辺正満, 原田滋久, 衣笠俊之, 込山祐大, 石井啓文, 江口律子, 辛埴

    KEK Proceedings   ( 98-15 )   1999

  • SrVO3,CaVO3の軟X線ラマン散乱

    江口律子, 原田慈久, 石井啓文, 石渡洋一, 渡辺正満, 十倉好紀, 辛埴

    日本物理学会講演概要集   54 ( 2 )   1999

  • 直線偏光を利用した高分解能軟X線ラマン散乱による半導体及び遷移金属化合物の研究

    辛埴, 渡辺正満, 原田慈久, 石井啓文, 江口律子, 石渡洋一

    PFシンポジウム報告   17th   1999

  • 直線偏光を利用した高分解能軟X線ラマン散乱による半導体及び遷移金属化合物の研究

    辛埴, 渡辺正満, 原田慈久, 衣笠俊之, 込山裕大, 石井啓文, 江口律子

    PFシンポジウム報告   16th   1999

  • 「Soft X-ray Raman scattering and Inverse Photoemission Spectroscopy of CaVO3 and SrVO3

    「The Physical Society of Japan」   1999

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  • 「Soft X-ray Raman scattering of CaVO3 and SrVO3

    「The Physical Society of Japan」   1999

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  • 25pYC-12 Polarlzation dependence of resonant soft x-ray emission spectra at Ce-3d absorption edge of CeO_2

    Watanabe Masamitsu, Komiyama Y, Harada Y, Kinugasa T, Eguchi R, Ishiwata Y, Shin S

    Meeting Abstracts of the Physical Society of Japan   54 ( 0 )   1999

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  • 25pYC-7 Soft x-ray emission study of Ni compounds

    石井 啓文, 高橋 隆, 山口 和芳, 原田 慈久, 石渡 洋一, 江口 律子, 辛 埴, 渡辺 正満, 宮坂 茂樹, 高木 英典, 内藤 寧典

    Meeting Abstracts of the Physical Society of Japan   54 ( 0 )   1999

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  • 25pYC-4 Polarized soft x-ray Raman Scattering of TiO_2

    Harada Y, Kinugasa T, Shin S, Eguchi R, Komiyama Y, Watanabe M, Yagishita A

    Meeting Abstracts of the Physical Society of Japan   54 ( 0 )   1999

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  • 24aC-4 Soft x-ray cmission spectroscopy of GaMnAs

    Ishiwata Y, Harada Y, Ishii H, Eguchi R, Shin Y, Hashimoto Y, Katsumoto S, Ie Y, Watanabe M

    Meeting Abstracts of the Physical Society of Japan   54 ( 0 )   1999

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Presentations

  • Temperature-dependent FET properties of dibenzo[n]phenacenes (n = 5 - 7)

    Yanting Zhang, Shino Hamao, Hidenori Goto, Yoshihiro Kubozono, Hideki Okamoto, Ritsuko Eguchi

    The 82nd JSAP Autumn Meeting 2021  2021.9.12 

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    Event date: 2021.9.10 - 2021.9.13

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Synthesis and physical properties of niobium oxide dihalide NbOBr2

    Ritsuko Eguchi

    International Meeting on Thin Film Interfaces and Composite Crystals  2021.1.25 

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    Event date: 2021.1.25 - 2021.1.26

    Language:English   Presentation type:Oral presentation (invited, special)  

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  • Pressure-induced superconductivity in Bi2−xSbxTe3−ySey

    Ritsuko Eguchi

    2019.11.4 

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    Event date: 2019.11.4 - 2019.11.5

    Language:English   Presentation type:Poster presentation  

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  • Superconductivity at LaAlO3/Sr1-xCaxTiO3 interfaces

    Ritsuko Eguchi

    25th International Workshop on Oxide Electronics  2018.10.1 

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    Event date: 2018.10.1 - 2018.10.3

    Language:English   Presentation type:Poster presentation  

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  • Superconductivity at LaAlO3/Sr1-xCaxTiO3 interfaces

    Ritsuko Eguchi, Margherita Boselli, Adrien Waelchli, Stefano Gariglio, Jean-Marc Triscone

    24th International Workshop on Oxide Electronics  2017.9.26 

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    Event date: 2017.9.24 - 2017.9.27

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  • Superconductivity at LaAlO3/Sr1-xCaxTiO3 interfaces Invited International conference

    2017.9.18 

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    Event date: 2017.9.18 - 2017.9.21

    Presentation type:Oral presentation (invited, special)  

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  • LaAlO3/Sr1-xCaxTiO3界面の超伝導特性

    江口 律子

    日本物理学会2018年秋季大会  2018.9 

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  • Superconductivity at LaAlO3/Sr1-xCaxTiO3 interfaces International conference

    2018.9 

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  • Conductivity and superconductivity at LaAlO3/Ca-doped SrTiO3 interfaces International conference

    2017.9 

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  • Characteristics of thin-film and single crystal field-effect transistors based on phenacene molecules International conference

    2016.5 

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  • フェナセン系薄膜電界効果トランジスタの論理回路応用

    江口 律子

    第63回応用物理学会春季学術講演会  2016.3 

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  • Superconductivity in thin single crystals of FeSe1-xTex International conference

    2016.2 

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  • FeSe1-xTex極薄単結晶デバイスの表面電子状態と伝導特性制御

    江口 律子

    日本物理学会 (2012年秋季大会)  2012.9 

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  • パイロクロア酸化物Cd2Os2O7及びCd2Re2O7の光電子分光

    江口 律子

    日本物理学会 (2009年秋季大会)  2009.9 

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  • NdNiO3薄膜のin-situ軟X線光電子分光

    江口 律子

    日本物理学会 (2008年秋季大会)  2008.9 

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  • 「パイロクロア型超伝導体Cd2Re2O7の光電子分光Ⅱ」(口頭発表)

    日本物理学会(第57回年次大会)、立命館大学  2002 

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  • 「Na0.33V2O5の高分解能角度光電子分光」(口頭発表)

    日本物理学会(2002年秋季大会)、中部大学  2002 

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  • 「SrVO3及びCaVO3の高分解能正逆光電子分光」(口頭発表)

    「日本物理学会(第56回年次大会)、中央大学」  2001 

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  • 「パイロクロア型超伝導体Cd2Re2O7の光電子分光」(口頭発表)

    「日本物理学会(2001年秋季大会)、徳島文理大学」  2001 

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  • 「軟X線ラマン散乱及び光電子分光によるV6O13の金属-絶縁体相転移」(口頭発表)

    「日本物理学会(2000年春の分科会)、関西大学」  2000 

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  • 「V6O13の角度分解光電子分光」(口頭発表)

    「日本物理学会(第55回年次大会)、新潟大学」  2000 

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  • 「CaVO3、SrVO3の軟X線ラマン散乱と共鳴逆光電子分光」(口頭発表)

    「日本物理学会(第54回年会)、広島大学」  1999 

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  • 「SrVO3、CaVO3の軟X線ラマン散乱」(口頭発表)

    「日本物理学会(1999年秋の分科会)、岩手大学」  1999 

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Research Projects

  • 酸化物界面における強誘電性揺らぎによる超伝導特性への影響

    2018.04 - 2021.03

    日本学術振興会  科学研究費助成事業 基盤研究(C) 

    江口 律子

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    Authorship:Principal investigator  Grant type:Competitive

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  • 様々な外部環境下における有機化合物へのキャリア注入と新奇物性の探索

    2011.04 - 2014.03

    日本学術振興会  科学研究費助成事業 若手研究(A) 

    江口 律子

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    Authorship:Principal investigator  Grant type:Competitive

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  • 遷移金属をドープした透明酸化物薄膜の光キャリア注入によるスピン制御

    2007.04 - 2010.03

    日本学術振興会  特別研究員奨励費 

    江口 律子

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    Authorship:Principal investigator  Grant type:Competitive

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  • 1次元強相間化合物の正・逆光電子分光による朝永・ラッティンジャー液体の実験的検証

    2003.04 - 2005.03

    日本学術振興会  特別研究員奨励費 

    江口 律子

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    Authorship:Principal investigator  Grant type:Competitive

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Class subject in charge

  • General Chemistry (2021academic year) 1st and 2nd semester  - 金1,金2

  • General Chemistry 1 (2021academic year) 1st semester  - 金1,金2

  • General Chemistry 1 (2021academic year) 1st semester  - 金1~2

  • Solid State Chemistry 1 (2021academic year) 1st semester  - 木3,木4

  • Solid State Chemistry I (2021academic year) 1st and 2nd semester  - 木3,木4

  • Fundamental Chemical Experiment (2021academic year) Third semester  - 火5,火6,火7,火8

  • Physical Chemistry of Surfaces (2021academic year) Late  - 月1,月2

  • Seminar in Physical Chemistry of Surface and Interface (2021academic year) Year-round  - その他

  • Physical Chemistry of Interface (2021academic year) Late  - その他

  • Quantum Physical Chemistry (2021academic year) Prophase  - 月1,月2

  • General Chemistry (2020academic year) 1st and 2nd semester  - 金1,金2

  • General Chemistry 1 (2020academic year) 1st semester  - 金1,金2

  • General Chemistry 1 (2020academic year) 1st semester  - 金1,金2

  • Solid State Chemistry 1 (2020academic year) 1st semester  - 木3,木4

  • Solid State Chemistry I (2020academic year) 1st and 2nd semester  - 木3,木4

  • Fundamental Chemical Experiment (2020academic year) Third semester  - 火5,火6,火7,火8

  • Physical Chemistry of Surfaces (2020academic year) Late  - 月1,月2

  • Seminar in Physical Chemistry of Surface and Interface (2020academic year) Prophase

  • Seminar in Physical Chemistry of Surface and Interface (2020academic year) Year-round  - その他

  • Physical Chemistry of Interface (2020academic year) Late  - その他

  • Quantum Physical Chemistry (2020academic year) Prophase  - 月1,月2

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