extended defects in semiconductors2000.04Control of defects in mc-Si for highly efficient solar cell2000.04point defects and their complexes in semiconductors2000.04 

Photograph

Name

YAMASHITA Yoshifumi

Affiliation

Graduate School of Natural Science and Technology

Title

Associate Professor

Sex

male

Laboratory address

3-1-1, Tsushima-naka, Kita-ku, Okayama 700-8530 Japan

E-mail address

E-mail address

Research areas, keyword

Applied Physics of Property and Crystallography, Lattice Defects

Research Subject 【 display / non-display

  • Subject:extended defects in semiconductors

    Object:

  • Subject:Control of defects in mc-Si for highly efficient solar cell

  • Subject:point defects and their complexes in semiconductors

 
 

Research Achievement (Published Thesis) 【 display / non-display

  • Subject:High-performance structure of a coil-shaped soft-actuator consisting of polymer threads and carbon nanotube yarns

    Language:English

    Kind of Publishing:Academic Journal

    Journal name:AIP Advances

    Publish date:2018.07

    Author:Hirotaka Inoue, Takayuki Yoshiyama, Masaki Hada, Daiki Chujo, Yoshitaka Saito, Takeshi Nishikawa,Yoshifumi Yamashita, Wataru Takarada, Hidetoshi Matsumoto, and Yasuhiko Hayashi

    Co-writerThe multiple authorship

  • Subject:Expansion of Shockley stacking fault observed by scanning electron microscope and partial dislocation motion in 4H-SiC

    Language:English

    Kind of Publishing:Academic Journal

    Journal name:Journal of Applied Physics

    Publish date:2018.04

    Author:Yoshifumi Yamashita, Ryu Nakata, Takeshi Nishikawa, Masaki Hada, and Yasuhiko Hayashi

    Co-writerThe multiple authorship

  • Subject:In-situ X-ray diffraction reveals the degradation of crystalline CH3NH3PbI3 by water-molecule collisions at room temperature

    Language:English

    Kind of Publishing:Academic Journal

    Journal name:Japanese Journal of Applied Physics

    Publish date:2018.02

    Author:Masaki Hada, Yoichi Hasegawa, Ryota Nagaoka, Tomoya Miyake, U. Abdullaev, Hiromi Ota, Takeshi Nishikawa, Yoshifumi Yamashita, and Yasuhiko Hayashi

    Co-writerThe multiple authorship

  • Subject:Dislocation motion in Sb-doped SiGe on Si substrate "jointly worked"

    Language:English

    Kind of Publishing:Academic Journal

    Journal name:Physica Status Solidi A , vol.209 (10) (p.1921 - 1925)

    Publish date:2012.10

    Author:Yoshifumi Yamashita, Takuya Matsunaga, Toru Funaki, Tatsuya Fushimi, Yoichi Kamiura

    Co-writerThe multiple authorship

  • Subject:Bistable character of a deep level in polycrystalline Si substrate for solar cell

    Language:English

    Kind of Publishing:International conference proceedings

    Journal name:Physica B , vol.404 (23-24) (p.5071 - 5074)

    Publish date:2009.12

    Author:Y. Yamashita, M. Ochi, H. Yoshinaga, Y. Kamiura, T. Ishiyama

    Co-writerThe multiple authorship

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